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1. 发明授权

US10407594B2 Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine 有权
公开(公告)号：US10407594B2
公开(公告)日：2019-09-10
申请号：US14004689
申请日：2012-03-19
申请人： Bastian Marten Noller , Yuzhuo Li , Diana Franz , Kenneth Rushing , Michael Lauter , Daniel Kwo-Hung Shen , Yongqing Lan , Zhenyu Bao
发明人： Bastian Marten Noller , Yuzhuo Li , Diana Franz , Kenneth Rushing , Michael Lauter , Daniel Kwo-Hung Shen , Yongqing Lan , Zhenyu Bao
IPC分类号： H01L21/302 , C03C25/68 , C09G1/02 , C09G1/16 , H01L21/306
摘要： A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(═O)(OR4)(OR5)), phosphate (—O—P(═O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(═O)(OH)2), phosphoric acid (—O—P(═O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

2. 发明授权

US09496146B2 Method for forming through-base wafer vias 有权
标题翻译：形成通孔晶圆通孔的方法
公开(公告)号：US09496146B2
公开(公告)日：2016-11-15
申请号：US14004585
申请日：2012-02-28
申请人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
发明人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
IPC分类号： H01L21/461 , H01L21/306 , H01L21/768 , C09G1/02 , H01L21/3105 , H01L21/321
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76898
摘要： Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.
摘要翻译：一种用于制造具有至少一个贯通基底晶片通孔的半导体晶片的方法，所述方法包括以下步骤：（1）提供具有至少一个导电通孔的半导体晶片，所述导电通孔包括导电金属并从半导体的前侧延伸晶片至少部分地穿过半导体晶片; （2）将半导体晶片的前端固定在载体上; （3）使半导体晶片的背面与抛光垫和pH等于或大于9的含水化学机械抛光组合物接触，并包含（A）磨料颗粒; （B）含有至少一种过氧化物基团的氧化剂; 和（C）作为金属螯合剂和金属缓蚀剂的添加剂; （4）对半导体晶片的背面进行化学机械抛光直至至少一个导电通孔露出。优选地，添加剂（C）是1,2,3-三唑。

3. 发明申请

US20130344696A1 METHOD FOR FORMING THROUGH-BASE WAFER VIAS 有权
标题翻译：通过基底波浪形成的方法
公开(公告)号：US20130344696A1
公开(公告)日：2013-12-26
申请号：US14004585
申请日：2012-02-28
申请人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
发明人： Yuzhuo Li , Changxue Wang , Daniel Kwo-Hung Shen
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31053 , H01L21/3212 , H01L21/76898
摘要： Method for manufacturing semiconductor wafers having at least one through-base wafer via, the said method comprising the steps of (1) providing a semiconductor wafer having at least one electrically conductive via comprising an electrically conductive metal and extending from the front side of the semiconductor wafer at least partially through the semiconductor wafer; (2) affixing the frontside of the semiconductor wafer to a carrier; (3) contacting the backside of the semiconductor wafer with a polishing pad and an aqueous chemical mechanical polishing composition having a pH of equal to or greater than 9 and comprising (A) abrasive particles; (B) an oxidizing agent containing at least one peroxide group; and (C) an additive acting both as metal chelating agent and metal corrosion inhibitor; (4) chemically mechanically polishing the backside of the semiconductor wafer until at least one electrically conductive via is exposed. Preferably, the additive (C) is 1,2,3-triazole.
摘要翻译：一种用于制造具有至少一个贯通基底晶片通孔的半导体晶片的方法，所述方法包括以下步骤：（1）提供具有至少一个导电通孔的半导体晶片，所述导电通孔包括导电金属并从半导体的前侧延伸晶片至少部分地穿过半导体晶片; （2）将半导体晶片的前端固定在载体上; （3）使半导体晶片的背面与抛光垫和pH等于或大于9的含水化学机械抛光组合物接触，并包含（A）磨料颗粒; （B）含有至少一种过氧化物基团的氧化剂; 和（C）作为金属螯合剂和金属缓蚀剂的添加剂; （4）对半导体晶片的背面进行化学机械抛光直至至少一个导电通孔露出。优选地，添加剂（C）是1,2,3-三唑。

4. 发明授权

US09255214B2 Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles 有权
标题翻译：包含无机颗粒和聚合物颗粒的化学机械抛光（CMP）组合物
公开(公告)号：US09255214B2
公开(公告)日：2016-02-09
申请号：US13503753
申请日：2010-11-10
申请人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
发明人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
IPC分类号： H01L21/76 , C09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

5. 发明申请

US20140004703A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A POLYMERIC POLYAMINE 审中-公开
标题翻译：包含聚合多胺的化学机械抛光（CMP）组合物
公开(公告)号：US20140004703A1
公开(公告)日：2014-01-02
申请号：US14004689
申请日：2012-03-19
申请人： Bastian Marten Noller , Yuzhuo Li , Diana Franz , Kenneth Rushing , Michael Lauter , Daniel Kwo-Hung Shen , Yongqing Lan , Zhenyu Bao
发明人： Bastian Marten Noller , Yuzhuo Li , Diana Franz , Kenneth Rushing , Michael Lauter , Daniel Kwo-Hung Shen , Yongqing Lan , Zhenyu Bao
IPC分类号： C09G1/02 , H01L21/306
CPC分类号： C09G1/02 , C09G1/16 , H01L21/30625
摘要： A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (—COOR1), sulfonate (—SO3R2), sulfate (—O—SO3R3), phosphonate (—P(═O) (OR4)(OR5)), phosphate (—O—P(═O)(OR6)(OR7)), carboxylic acid (—COOH), sulfonic acid (—SO3H), sulfuric acid (—O—SO3—), phosphonic acid (—P(═O)(OH)2), phosphoric acid (—O—P(═O)(OH)2) moiety, or their deprotonated forms, R1 is alkyl, aryl, alkylaryl, or arylalkyl R2 is alkyl, aryl, alkylaryl, or arylalkyl, R3 is alkyl, aryl, alkylaryl, or arylalkyl, R4 is alkyl, aryl, alkylaryl, or arylalkyl, R5 is H, alkyl, aryl, alkylaryl, or arylalkyl, R6 is alkyl, aryl, alkylaryl, or arylalkyl, R7 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）无机颗粒，有机颗粒或其复合材料或混合物，（B）聚合多胺或其盐，其包含至少一种类型的侧基（Y），其包含（Z）是羧酸酯（-COOR1），磺酸酯（-SO3R2），硫酸酯（-O-SO3R3），膦酸酯（-P（= O）（OR4）（OR5）），磷酸酯（-OP（= O）（OR 6）（OR 7）），羧酸（-COOH），磺酸（-SO 3 H），硫酸（-O-SO 3 - ），膦酸（-P（= O））2），磷酸（-OP（= O）（OH）2）部分或其去质子化形式，R1是烷基，芳基，烷基芳基或芳烷基R2是烷基，芳基，烷基芳基或芳基烷基，R3是烷基，芳基，烷基芳基或芳烷基，R 4是烷基，芳基，烷基芳基或芳基烷基，R 5是H，烷基，芳基，烷基芳基或芳基烷基，R 6是烷基，烷基芳基或芳基烷基，和（C）水性介质。

6. 发明申请

US20120208344A1 CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING INORGANIC PARTICLES AND POLYMER PARTICLES 有权
标题翻译：化学机械抛光（CMP）包含无机颗粒和聚合物颗粒的组合物
公开(公告)号：US20120208344A1
公开(公告)日：2012-08-16
申请号：US13503753
申请日：2010-11-10
申请人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
发明人： Michael Lauter , Vijay Immanuel Raman , Yuzhuo Li , Shyam Sundar Venkataraman , Daniel Kwo-Hung Shen
IPC分类号： H01L21/76 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.
摘要翻译：一种化学机械抛光（CMP）组合物，其包含（A）分散在液体介质（C）中的至少一种类型的无机颗粒，（B）分散在液体介质（C）中的至少一种类型的聚合物颗粒），（C）液体介质（C）中的无机粒子（A）的ζ电位和液体介质（C）中的聚合物粒子的ζ电位相同的液体介质。

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