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    • 14. 发明授权
    • Magnetic recording medium and method of manufacture of same
    • 磁记录介质及其制造方法
    • US5972438A
    • 1999-10-26
    • US900824
    • 1997-07-25
    • Masayasu SuzukiTuyoshi MochizukiHiroshi Kawashima
    • Masayasu SuzukiTuyoshi MochizukiHiroshi Kawashima
    • G06K1/12G06K19/06B42D107/00G11B5/80
    • G06K19/06196G06K1/125G06K19/06187Y10S283/901Y10S283/904Y10S428/90
    • A magnetic recording medium is made by applying a coating mixture having magnetic particles dispersed in a binder and drying the coating mixture so as to produce a coding layer containing tamper-proof identifier coding information comprising designed patterns, letters, numerals and bar-code type patterns. Another magnetic layer for recording regular magnetic data can be provided above or below the coding layer. The coding information can neither be read or altered by ordinary magnetic reader. The magnetic recording medium is therefore useful for such applications as shopping cards, pre-paid cards, retail store cards; financial cards including credit cards, insurance cards; travelling cards including transit passes, tickets; and identification cards including passports, birth certificates and other personal identification cards. A method of making such a magnetic recording medium is also presented in which the coating mixture is applied on a non-magnetic base material, and while the coating mixture is still wet, i.e. while the magnetic particles are mobile, suitable coding information is magnetically recorded. The coating mixture is then dried to fixate the identifier coding information in the coding layer to produce fixated coding information which is non-erasable and non-alterable.
    • 通过将具有分散在粘合剂中的磁性颗粒的涂布混合物涂覆并干燥涂布混合物来制造磁记录介质,以便产生包含设计图案,字母,数字和条形码型图案的防篡改标识符编码信息的编码层 。 可以在编码层的上方或下方提供用于记录规则磁数据的另一个磁性层。 普通的磁性阅读器不能读取或改变编码信息。 因此,磁记录介质对于诸如购物卡,预付卡,零售商店卡等应用是有用的; 金融卡包括信用卡,保险卡; 旅行卡包括过境通票,门票; 身份证,包括护照,出生证明和其他个人身份证。 还提出了制造这种磁记录介质的方法,其中将涂布混合物施加在非磁性基材上,并且当涂料混合物仍然是湿的时候,即当磁性颗粒是可移动的时,磁性记录合适的编码信息 。 然后将涂布混合物干燥以固定编码层中的标识符编码信息,以产生不可擦除和不可更改的固定编码信息。
    • 19. 发明授权
    • Surface wave excitation plasma CVD system
    • 表面波激发等离子体CVD系统
    • US08307781B2
    • 2012-11-13
    • US10976856
    • 2004-11-01
    • Masayasu Suzuki
    • Masayasu Suzuki
    • C23C16/00C23F1/00H01L21/306
    • C23C16/45508C23C16/45563C23C16/45565C23C16/45589C23C16/511
    • This surface wave excitation plasma CVD system, along with feeding a material gas including silicon element by feeding the material gas into a chamber 1 from at least one of an upper surface gas introduction conduit and a side surface gas introduction conduit, also activates the material gas with a surface wave excitation plasma and feeds a process gas which initiates chemical reactions within the material gas into the chamber 1 from a process gas introduction conduit 5. A gas feed aperture of the upper surface gas introduction conduit and/or the side surface gas introduction conduit is provided in a position which is closer to the substrate than the gas feed aperture of the process gas introduction conduit.
    • 这种表面波激发等离子体CVD系统通过从上表面气体导入管道和侧面气体导入管道中的至少一个将原料气体进料到室1中,同时供给包括硅元素的材料气体,也激活材料气体 具有表面波激发等离子体并且将来自原料气体的化学反应的工艺气体从工艺气体引入导管5供给到腔室1中。上表面气体导入管道和/或侧面气体引入的气体供给孔 导管设置在比处理气体导入管道的气体供给孔更靠近基板的位置。
    • 20. 发明授权
    • Method for plasma deposition and plasma CVD system
    • 等离子体沉积和等离子体CVD系统的方法
    • US08272348B2
    • 2012-09-25
    • US12811333
    • 2008-02-26
    • Masayasu Suzuki
    • Masayasu Suzuki
    • C23C16/00C23C16/50
    • H01L21/318C23C16/345C23C16/515C23C16/52
    • In a film-forming process with a capacitively-coupled plasma (CCP) chemical vapor deposition (CVD) device, pulse control is performed on a low-frequency radio-frequency power source. During the pulse control, an ON time and an OFF time form one period. Furthermore, in the pulse control, a time interval between a time period from the moment that the electric power supply is stopped till the electron density decreases to a residual plasma threshold capable of causing an arc discharge and a time period from the moment that the electric power supply is stopped till the density of high-temperature electrons decreases to a specific plasma state serves as the OFF time; a saturation time during the rising process of the density of the high-temperature electrons in the plasma after the electric power supply is started serves as an upper limit of the ON time; and electric power is intermittently supplied under the above conditions.
    • 在具有电容耦合等离子体(CCP)化学气相沉积(CVD)器件的成膜工艺中,在低频率射频电源上执行脉冲控制。 在脉冲控制期间,ON时间和OFF时间形成一个周期。 此外,在脉冲控制中,从停止供电的时刻到电子浓度降低到能够产生电弧放电的剩余等离子体阈值的时间段与从电动时间起始的时间段之间的时间间隔 电源停止,直到高温电子的密度降低到特定的等离子体状态为OFF时间; 电力供给开始后的等离子体中的高温电子的密度上升过程中的饱和时间为ON时间的上限; 并在上述条件下间歇地供电。