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11. 发明授权

US07871841B2 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07871841B2
公开(公告)日：2011-01-18
申请号：US12285267
申请日：2008-10-01
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01L21/00 , H01S5/22
CPC分类号： H01S5/18311 , H01S5/18358 , H01S5/2086
摘要： A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.
摘要翻译：一种制造半导体发光器件的方法包括以下步骤：在半导体衬底上形成包括待氧化层的垂直腔结构，然后形成具有从上部至少穿透氧化层的深度的圆形槽从而形成其侧面被槽包围的柱状台面，从台面的侧面氧化待氧化层，形成电流限制层，形成掩模层至少覆盖台面的上表面的中心区域，并将台面的上表面和侧面的至少边缘暴露于外部，然后至少蚀刻台面的上表面和侧面的边缘使用掩模层作为掩模。

12. 发明申请

US20090098675A1 Method for manufacturing semiconductor light-emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US20090098675A1
公开(公告)日：2009-04-16
申请号：US12285267
申请日：2008-10-01
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Rintaro Koda , Tomoyuki Oki
IPC分类号： H01L21/02
CPC分类号： H01S5/18311 , H01S5/18358 , H01S5/2086
摘要： A method of manufacturing a semiconductor light-emitting device includes steps of forming a vertical cavity structure including a layer to be oxidized on a semiconductor substrate, and then forming a circular groove having a depth which penetrates at least the layer to be oxidized from an upper surface of the vertical cavity structure, thereby forming a columnar mesa whose side face is surrounded by the groove, oxidizing the layer to be oxidized from the side face of the mesa, thereby forming a current confinement layer, and forming a mask layer covering at least a central region of the upper surface of the mesa and exposing at least an edge of the upper surface and the side face of the mesa to an external, and then etching at least the edge of the upper surface and the side face of the mesa by using the mask layer as a mask.
摘要翻译：一种制造半导体发光器件的方法包括以下步骤：在半导体衬底上形成包括待氧化层的垂直腔结构，然后形成具有从上部至少穿透氧化层的深度的圆形槽从而形成其侧面被槽包围的柱状台面，从台面的侧面氧化待氧化层，形成电流限制层，形成掩模层至少覆盖台面的上表面的中心区域，并将台面的上表面和侧面的至少边缘暴露于外部，然后至少蚀刻台面的上表面和侧面的边缘使用掩模层作为掩模。

13. 发明申请

US20080279241A1 Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20080279241A1
公开(公告)日：2008-11-13
申请号：US12078681
申请日：2008-04-03
申请人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
发明人： Tomoyuki Oki , Yuji Masui , Yoshinori Yamauchi , Rintaro Koda , Takahiro Arakida
IPC分类号： H01S5/18 , H01L21/02 , H01S5/323
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/02284 , H01S5/02288 , H01S5/0425 , H01S5/125 , H01S5/18 , H01S5/18311 , H01S5/18338 , H01S5/187 , H01S5/22 , H01S5/221 , H01S5/2231 , H01S5/343 , H01S5/34313 , H01S5/3432 , H01S2301/176 , H01S2301/18
摘要： A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
摘要翻译：发光元件包括台面结构，其中第一导电类型的第一化合物半导体层，有源层和第二导电类型的第二化合物半导体层以该顺序设置，其中第一化合物半导体层和第二化合物半导体层具有由从台面结构的侧壁部向内延伸的绝缘区域包围的电流收缩区域; 设置成围绕台面结构的壁结构; 连接台面结构和壁结构的至少一个桥结构，壁结构和桥结构各自具有与设置绝缘区域的台面结构部分相同的层结构; 第一电极; 以及设置在所述壁结构的顶面上的第二电极。

14. 发明授权

US08497141B2 Semiconductor device and method of manufacturing it 有权
公开(公告)号：US08497141B2
公开(公告)日：2013-07-30
申请号：US13137339
申请日：2011-08-08
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号： H01L21/66 , H01L33/10
CPC分类号： H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

15. 发明授权

US08022424B2 Semiconductor device and method of manufacturing it 有权
公开(公告)号：US08022424B2
公开(公告)日：2011-09-20
申请号：US11806884
申请日：2007-06-05
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号： H01L33/14
CPC分类号： H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

16. 发明授权

US07791085B2 Semiconductor light emitting apparatus 有权
标题翻译：半导体发光装置
公开(公告)号：US07791085B2
公开(公告)日：2010-09-07
申请号：US11604514
申请日：2006-11-27
申请人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Yuji Masui
发明人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Norihiko Yamaguchi , Yuji Masui
IPC分类号： H01L29/161
CPC分类号： H01L31/173 , H01L31/022408
摘要： Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.
摘要翻译：这里公开了一种半导体发光装置，其包括：半导体发光器件，其具有包括发光区域的第一半导体层叠结构和允许从发光区域发射的光在层叠方向上通过其出射的光出射窗 ; 光发射部，设置在与所述发光区域对应的区域中; 设置在所述第一半导体层叠结构体的与所述发光区域的外周区域对应的区域中的金属部件; 以及具有第二半导体层叠结构的半导体光检测器，该第二半导体叠层结构包括用于吸收从层叠方向入射的一部分光的光吸收层。在该装置中，半导体发光器件，包括透光部分和金属部分的层以及半导体光检测器以按顺序层叠的方式一体地形成。

17. 发明申请

US20070278475A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20070278475A1
公开(公告)日：2007-12-06
申请号：US11802460
申请日：2007-05-23
申请人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Yuji Masui , Norihiko Yamaguchi
发明人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Yuji Masui , Norihiko Yamaguchi
IPC分类号： H01L29/06
CPC分类号： H01S5/0264 , H01S5/0683 , H01S5/1078 , H01S5/18311 , H01S2301/18
摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.
摘要翻译：半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上，并且以半导体发光元件形成为一个单元。

18. 发明申请

US20110294236A1 Semiconductor device and method of manufacturing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110294236A1
公开(公告)日：2011-12-01
申请号：US13137339
申请日：2011-08-08
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号： H01L21/66
CPC分类号： H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
摘要翻译：提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

19. 发明授权

US07423294B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07423294B2
公开(公告)日：2008-09-09
申请号：US11802460
申请日：2007-05-23
申请人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Yuji Masui , Norihiko Yamaguchi
发明人： Rintaro Koda , Takahiro Arakida , Yoshinori Yamauchi , Yuji Masui , Norihiko Yamaguchi
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： H01S5/0264 , H01S5/0683 , H01S5/1078 , H01S5/18311 , H01S2301/18
摘要： A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.
摘要翻译：半导体发光器件包括：依次包括第一导电类型半导体层，包括发光区域的有源层和第二导电类型半导体层的半导体发光元件; 具有透射特性的滤光器，其中在与所述半导体发光元件输出的光的感应发光的光轴平行的方向上的透射率高于在与所述光轴不同的方向上的透射率的透射率; 以及包含光吸收层的半导体光电检测器，所述光吸收层吸收通过所述滤光器的光的一部分，其中所述滤光器和所述半导体光电检测器依次层叠在所述半导体发光元件的第二导电类型半导体层上，并且以半导体发光元件形成为一个单元。

20. 发明申请

US20090032908A1 Semiconductor device and method of manufacturing it 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20090032908A1
公开(公告)日：2009-02-05
申请号：US11806884
申请日：2007-06-05
申请人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
发明人： Yuji Masui , Takahiro Arakida , Yoshinori Yamauchi , Kayoko Kikuchi , Rintaro Koda , Norihiko Yamaguchi
IPC分类号： H01L29/06 , H01L21/66
CPC分类号： H01S5/18347 , H01L22/12 , H01L2924/0002 , H01S5/0014 , H01S5/0042 , H01S5/0202 , H01S5/0425 , H01S5/18311 , H01S5/18344 , H01S5/423 , H01L2924/00
摘要： A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
摘要翻译：提供了一种能够大幅提高成品率的半导体器件的制造方法以及使用该方法制造的半导体器件。在基板上形成半导体层之后，对于每个单位芯片区域，在半导体层中形成具有至少一个参数值彼此不同的多个功能部分。然后，对根据参数值进行变更的被摄体进行测量和评价，之后，对于每个芯片区域分割基板，使得作为评价结果的与给定标准对应的功能部分不被破坏。由此，通过适当地调整每个参数值，可以通过每个芯片面积形成与给定标准对应的至少一个功能部分。

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