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11. 发明授权

US07367109B2 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment 失效
标题翻译：制造具有零净磁矩的固定层的磁传感器的方法
公开(公告)号：US07367109B2
公开(公告)日：2008-05-06
申请号：US11048259
申请日：2005-01-31
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3166 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.
摘要翻译：描述了用于在GMR传感器（例如Co-Fe / Ru / Co-Fe）中实现钉扎层的几乎零净磁矩的方法。该方法确定第一被钉扎层的厚度，其将产生用于钉扎层的期望的净磁矩。一系列测试结构沉积在诸如玻璃的基底上。测试结构包括种子层，钉扎层和钉扎层，并且具有变化的第一钉扎层的厚度。材料的组成和所有其它膜的厚度保持恒定。测量每个测试结构的净面积磁矩并绘制相对于第一固定层的厚度。选择最接近零网面磁矩的第一钉扎层的厚度作为传感器的设计点。

12. 发明授权

US07190557B2 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US07190557B2
公开(公告)日：2007-03-13
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian R. York , Alexander M. Zeltser
发明人： Jinshan Li , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

13. 发明授权

US6143388A Thin film disk with onset layer 失效
标题翻译：具有起始层的薄膜盘
公开(公告)号：US6143388A
公开(公告)日：2000-11-07
申请号：US976565
申请日：1997-11-24
申请人： Xiaoping Bian , Mary Frances Doerner , Shanlin Duan , Jinshan Li , Mohammad Taghi Mirzamaani
发明人： Xiaoping Bian , Mary Frances Doerner , Shanlin Duan , Jinshan Li , Mohammad Taghi Mirzamaani
IPC分类号： G11B5/64 , G11B5/66 , G11B5/73
CPC分类号： G11B5/732 , G11B5/656 , G11B5/66 , G11B5/7325 , Y10S428/90 , Y10T428/265
摘要： A thin film disk and a disk drive using the thin film disk are described. The disk has an onset layer between the underlayer and the boron containing magnetic layer, for example. The onset layer of the invention is useful because the boron containing magnetic layer material resists being deposited with the C-axis in plane. The onset layer material is selected to promote an in-plane C-axis orientation. When a boron containing magnetic layer is deposited on the onset layer the resulting in-plane PO is improved. The preferred onset layer is of hexagonal closed pack structured material which may be magnetic or nonmagnetic. Materials which are usable for the onset layer include a wide range of pure elements and cobalt alloys such as CoCr, CoPtCr, CoPtCrTa and CoCrB. The onset layer is particularly useful in allowing a ferromagnetic cobalt (Co) alloy containing a relatively high chromium and boron content to be deposited on nonmetallic substrates with the C-axis in the plane of disk without the need for negative bias during the sputtering of the underlayer.
摘要翻译：描述使用薄膜盘的薄膜盘和磁盘驱动器。例如，盘在底层和含硼磁性层之间具有起始层。本发明的起始层是有用的，因为含硼磁性层材料抵抗C平面上的沉积。选择起始层材料以促进面内C轴取向。当含硼磁性层沉积在起始层上时，所得到的面内PO得到改善。优选的起始层是可以是磁性或非磁性的六边形封闭包装结构材料。可用于起始层的材料包括宽范围的纯元素和钴合金，例如CoCr，CoPtCr，CoPtCrTa和CoCrB。起始层特别适用于允许含有相对较高的铬和硼含量的铁磁性钴（Co）合金沉积在非金属基体上，其中C轴在盘平面中，而不需要在溅射期间的负偏压底层

14. 发明授权

US5567523A Magnetic recording medium comprising a carbon substrate, a silicon or aluminum nitride sub layer, and a barium hexaferrite magnetic layer 失效
标题翻译：包括碳衬底，硅或氮化铝子层和六硼酸钡磁性层的磁记录介质
公开(公告)号：US5567523A
公开(公告)日：1996-10-22
申请号：US325069
申请日：1994-10-19
申请人： Stephen S. Rosenblum , Jinshan Li , Hidetaka Hayashi
发明人： Stephen S. Rosenblum , Jinshan Li , Hidetaka Hayashi
IPC分类号： G11B5/64 , G11B5/73 , G11B5/66
CPC分类号： G11B5/7315 , G11B5/656 , G11B5/7325 , Y10S428/90 , Y10T428/30
摘要： Magnetic recording media suitable for high density recording are provided by a carbon substrate, a magnetic recording layer, and at least one interlayer therebetween which provides one or more properties beneficial to preventing diffusion, inducing a preferred orientation in the magnetic recording layer and/or promoting adhesion between a carbon substrate and a barium hexaferrite-based magnetic recording layer. Alternatively, the present magnetic recording media may contain two different interlayers, which bar diffusion of carbon atoms from said substrate to said magnetic recording layer, improve adhesion between adjacent layers, induce an orientation in the magnetic recording layer, or any combination thereof. The present recording media are particularly advantageous for perpendicular recording. Processes for producing these magnetic recording media are also provided.
摘要翻译：适用于高密度记录的磁记录介质由碳基板，磁记录层及其间的至少一个中间层提供，其提供一个或多个有利于防止扩散的特性，在磁记录层中引入优选的取向和/或促进碳基板和六铁基钡基磁记录层之间的粘合。或者，本磁记录介质可以包含两个不同的夹层，其将碳原子从所述衬底扩散到所述磁记录层，改善相邻层之间的粘附性，引起磁记录层中的取向或其任何组合。本记录介质对于垂直记录是特别有利的。还提供了用于制造这些磁记录介质的方法。

15. 发明授权

US08320722B1 Non-linear optical grating 有权
标题翻译：非线性光栅
公开(公告)号：US08320722B1
公开(公告)日：2012-11-27
申请号：US12759491
申请日：2010-04-13
申请人： Hongxing Yuan , Shing Lee , Zhongyan Wang , Jinshan Li
发明人： Hongxing Yuan , Shing Lee , Zhongyan Wang , Jinshan Li
IPC分类号： G02B6/34 , G02F1/295
CPC分类号： G02B5/1861 , G02B6/124
摘要： A method and system for providing an optical grating are described. The optical grating is configured for light of a wavelength. The optical grating includes a top cladding, a core, and bottom cladding. The core resides between the bottom cladding and the top cladding. The core includes a plurality of discrete ridges spaced apart by a nonlinear pitch. The light traverses the top cladding before the core and has a plurality of angles of incidence with the core. The nonlinear pitch of the core is larger for a larger angle of incidence of the plurality of angles of incidence.
摘要翻译：描述了一种用于提供光栅的方法和系统。光栅被配置用于波长的光。光栅包括顶部包层，芯部和底部包层。核心位于底部包层和顶部包层之间。芯部包括由非线性间距间隔开的多个离散脊。光穿过芯之前的顶部包层并且具有多个与芯的入射角。对于多个入射角的较大入射角，芯的非线性间距较大。

16. 发明申请

US20080285182A1 ENHANCED ANTI-PARALLEL-PINNED SENSOR USING THIN RUTHENIUM SPACER AND HIGH MAGNETIC FIELD ANNEALING 有权
标题翻译：使用薄型间隔器和高磁场退火的增强型抗并联型传感器
公开(公告)号：US20080285182A1
公开(公告)日：2008-11-20
申请号：US12172134
申请日：2008-07-11
申请人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
发明人： Wen-Yaung Lee , Jinshan Li , Daniele Mauri , Koichi Nishioka , Yasunari Tajima
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/12 , Y10T428/1121
摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.
摘要翻译：反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。

17. 发明申请

US20060226940A1 Method and apparatus for setting a sensor AFM with a superconducting magnet 审中-公开
标题翻译：用超导磁体设置传感器AFM的方法和装置
公开(公告)号：US20060226940A1
公开(公告)日：2006-10-12
申请号：US11244618
申请日：2005-10-05
申请人： Wen-yaung Lee , Jinshan Li
发明人： Wen-yaung Lee , Jinshan Li
IPC分类号： H01F6/00
CPC分类号： H01F6/00 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3909 , G11B2005/0008 , G11B2005/3996 , H01F10/3268 , H01F13/00 , H01F27/365 , H01L43/12
摘要： A method for constructing a magnetoresistive sensor using a horizontally disposed superconducting magnetic tool. The superconducting magnetic tool is capable of generating very high magnetic fields for sustained periods of time to effectively set the magnetizations of magnetoresitive sensors having a very high pinning field. The supermagnetic tool has a ceramic tube surrounded by a superconducting coil. The tube has a longitudinal axis that is oriented horizontally, thereby providing numerous important benefits, such as: facilitating manipulation of the sensor containing wafer within the tool; facilitating loading of the wafer into the tool; preventing temperature and field gradients within the wafer during the anneal; and facilitating maintenance and storage of the tool by limiting the height of the tool.
摘要翻译：一种使用水平布置的超导磁性工具构造磁阻传感器的方法。超导磁性工具能够在持续的时间段内产生非常高的磁场，以有效地设置具有非常高的钉扎场的磁阻传感器的磁化。超磁性工具具有由超导线圈包围的陶瓷管。管具有水平定向的纵向轴线，从而提供许多重要的益处，例如：便于在工具内操纵含传感器的晶片; 便于将晶片装载到工具中; 在退火期间防止晶片内的温度和场梯度; 并且通过限制工具的高度来促进工具的维护和储存。

18. 发明申请

US20060168797A1 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment 失效
标题翻译：制造具有零净磁矩的固定层的磁传感器的方法
公开(公告)号：US20060168797A1
公开(公告)日：2006-08-03
申请号：US11048259
申请日：2005-01-31
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/33
CPC分类号： G11B5/3166 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.
摘要翻译：描述了用于在GMR传感器（例如Co-Fe / Ru / Co-Fe）中实现钉扎层的几乎零净磁矩的方法。该方法确定第一被钉扎层的厚度，其将产生用于钉扎层的期望的净磁矩。一系列测试结构沉积在诸如玻璃的基底上。测试结构包括种子层，钉扎层和钉扎层，并且具有变化的第一钉扎层的厚度。材料的组成和所有其它膜的厚度保持恒定。测量每个测试结构的净面积磁矩并绘制相对于第一固定层的厚度。选择最接近零网面磁矩的第一钉扎层的厚度作为传感器的设计点。

19. 发明申请

US20050231853A1 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US20050231853A1
公开(公告)日：2005-10-20
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian York , Alexander Zeltser
发明人： Jinshan Li , Brian York , Alexander Zeltser
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

20. 发明申请

US20050135004A1 Epitaxial oxide cap layers for enhancing GMR performance 失效
标题翻译：用于增强GMR性能的外延氧化物盖层
公开(公告)号：US20050135004A1
公开(公告)日：2005-06-23
申请号：US10741436
申请日：2003-12-19
申请人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
发明人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
IPC分类号： G11B5/187 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.
摘要翻译：包含这种头部的磁头和磁存储系统，头部包括自由层和相对于自由层基本上外延形成的金属氧化物层。优选地，金属氧化物层是结晶结构，并且是ZnO。

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