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1. 发明授权

US07367109B2 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment 失效
标题翻译：制造具有零净磁矩的固定层的磁传感器的方法
公开(公告)号：US07367109B2
公开(公告)日：2008-05-06
申请号：US11048259
申请日：2005-01-31
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3166 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.
摘要翻译：描述了用于在GMR传感器（例如Co-Fe / Ru / Co-Fe）中实现钉扎层的几乎零净磁矩的方法。该方法确定第一被钉扎层的厚度，其将产生用于钉扎层的期望的净磁矩。一系列测试结构沉积在诸如玻璃的基底上。测试结构包括种子层，钉扎层和钉扎层，并且具有变化的第一钉扎层的厚度。材料的组成和所有其它膜的厚度保持恒定。测量每个测试结构的净面积磁矩并绘制相对于第一固定层的厚度。选择最接近零网面磁矩的第一钉扎层的厚度作为传感器的设计点。

2. 发明申请

US20060168797A1 Method of fabricating magnetic sensors with pinned layers with zero net magnetic moment 失效
标题翻译：制造具有零净磁矩的固定层的磁传感器的方法
公开(公告)号：US20060168797A1
公开(公告)日：2006-08-03
申请号：US11048259
申请日：2005-01-31
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/33
CPC分类号： G11B5/3166 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B2005/0016 , Y10T29/49032 , Y10T29/49036 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for achieving a nearly zero net magnetic moment of pinned layers in GMR sensors, such as Co—Fe/Ru/Co—Fe, is described. The method determines a thickness of the first pinned layer which will yield the desired net magnetic moment for the pinned layers. A series of test structures are deposited on a substrate such as glass. The test structures include the seed layers, pinning layers and pinned layers and have varying thicknesses of the first pinned layer. The compositions of the materials and the thicknesses of all of the other films remain constant. The net areal magnetic moment of each test structure is measured and plotted versus the thickness of the first pinned layer. The thickness of the first pinned layer which corresponds most closely to zero net areal magnetic moment is chosen as the design point for the sensor.
摘要翻译：描述了用于在GMR传感器（例如Co-Fe / Ru / Co-Fe）中实现钉扎层的几乎零净磁矩的方法。该方法确定第一被钉扎层的厚度，其将产生用于钉扎层的期望的净磁矩。一系列测试结构沉积在诸如玻璃的基底上。测试结构包括种子层，钉扎层和钉扎层，并且具有变化的第一钉扎层的厚度。材料的组成和所有其它膜的厚度保持恒定。测量每个测试结构的净面积磁矩并绘制相对于第一固定层的厚度。选择最接近零网面磁矩的第一钉扎层的厚度作为传感器的设计点。

3. 发明授权

US07554775B2 GMR sensors with strongly pinning and pinned layers 失效
标题翻译： GMR传感器具有强固定和固定层
公开(公告)号：US07554775B2
公开(公告)日：2009-06-30
申请号：US11069306
申请日：2005-02-28
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.
摘要翻译：描述了具有强钉扎和钉扎层的巨磁阻（GMR）传感器用于超高密度的磁记录。钉扎层是具有大约70至80原子％的Mn含量并且Cr含量约为1至10原子％的反铁磁（AFM）铱 - 锰 - 铬（Ir-Mn-Cr）膜。第一被钉扎层优选为Fe含量为约20至80at％且具有高正饱和磁致伸缩的铁磁性Co-Fe。第二被钉扎层优选为Fe含量约为0〜10原子％的铁磁Co-Fe。第一和第二被钉扎层的净磁矩被设计为几乎为零，以便实现超过3,000Oe的钉扎场。

4. 发明申请

US20060193089A1 GMR sensors with strongly pinning and pinned layers 失效
公开(公告)号：US20060193089A1
公开(公告)日：2006-08-31
申请号：US11069306
申请日：2005-02-28
申请人： Jinshan Li , Tsann Lin
发明人： Jinshan Li , Tsann Lin
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A giant magnetoresistance (GMR) sensor with strongly pinning and pinned layers is described for magnetic recording at ultrahigh densities. The pinning layer is an antiferromagnetic (AFM) iridium-manganese-chromium (Ir—Mn—Cr) film having a Mn content of approximately from 70 to 80 atomic percent and having a Cr content of approximately from 1 to 10 atomic percent. The first pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 20 to 80 at % and having high, positive saturation magnetostriction. The second pinned layer is preferably a ferromagnetic Co—Fe having an Fe content of approximately from 0 to 10 atomic percent. The net magnetic moment of the first and second pinned layers is designed to be nearly zero in order to achieve a pinning field of beyond 3,000 Oe.

5. 发明授权

US08532450B1 Optical grating and method of manufacture 有权
标题翻译：光栅及其制造方法
公开(公告)号：US08532450B1
公开(公告)日：2013-09-10
申请号：US12645491
申请日：2009-12-23
申请人： Zhongyan Wang , Wei Gao , Ruolin Li , HongXing Yuan , Jinshan Li
发明人： Zhongyan Wang , Wei Gao , Ruolin Li , HongXing Yuan , Jinshan Li
IPC分类号： G02F1/295
CPC分类号： G02B5/1857
摘要： A method and system for providing an optical grating are described. The optical grating is configured for light of a wavelength and includes a first optically transparent layer, a stop layer on the first optically transparent layer, and a second optically transparent layer on the stop layer. The first optically transparent layer is continuous and includes a material. The second optically transparent layer also includes the material. The second optically transparent layer also includes a plurality of discrete ridges spaced apart by a pitch. The stop layer is configured to be invisible to the light.
摘要翻译：描述了一种用于提供光栅的方法和系统。光栅被配置成用于波长的光，并且包括第一光学透明层，第一光学透明层上的停止层和停止层上的第二光学透明层。第一光学透明层是连续的并且包括材料。第二光学透明层还包括材料。第二光学透明层还包括由间距间隔开的多个离散脊。停止层被配置为对光不可见。

6. 发明授权

US07646569B2 Pinned layer in magnetoresistive sensor 有权
标题翻译：磁阻传感器中的固定层
公开(公告)号：US07646569B2
公开(公告)日：2010-01-12
申请号：US11458896
申请日：2006-07-20
申请人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
发明人： Jinshan Li , Kouichi Nishioka , Satoshi Shigematsu , Alexander M. Zeltser
IPC分类号： G11B5/127
CPC分类号： G11B5/39
摘要： A method for manufacturing a magnetic read sensor and a magnetic read sensor are provided. In one embodiment of the invention, the method includes providing a seed layer disposed over a substrate of the magnetic read sensor, providing a free layer disposed over a seed layer and providing a spacer layer disposed over the free layer. The method further includes providing a pinned layer disposed over the spacer layer. In one embodiment, the pinned layer includes cobalt and iron, wherein the concentration of iron in the pinned layer is between 33 and 37 atomic percent (at. %). The method further includes providing a pinning layer disposed over the pinned layer, wherein the pinning layer is in contact with the pinned layer.
摘要翻译：提供了一种用于制造磁读取传感器和磁读取传感器的方法。在本发明的一个实施例中，该方法包括提供设置在磁读取传感器的衬底上的种子层，提供设置在种子层上的自由层并提供设置在自由层之上的间隔层。该方法还包括提供设置在间隔层上方的钉扎层。在一个实施例中，钉扎层包括钴和铁，其中钉扎层中的铁的浓度为33至37原子百分比（原子％）。该方法还包括提供设置在钉扎层上方的钉扎层，其中钉扎层与钉扎层接触。

7. 发明授权

US07538988B2 Method and apparatus having improved magnetic read head sensors 失效
标题翻译：具有改进的磁读头传感器的方法和装置
公开(公告)号：US07538988B2
公开(公告)日：2009-05-26
申请号：US10955396
申请日：2004-09-30
申请人： Jinshan Li , Alexander M. Zeltser
发明人： Jinshan Li , Alexander M. Zeltser
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A method and apparatus for an improved magnetic read sensor having synthetic or AP pinned layers with high resistance and high magnetoelastic anisotropy is disclosed. A pinned layer includes a cobalt-iron ternary alloy, where a third constituent of the cobalt-iron ternary alloy layer is selected for increasing the resistance and magnetoelastic anisotropy of the cobalt-iron ternary alloy layer.
摘要翻译：公开了一种具有具有高电阻和高磁弹性各向异性的合成或AP钉扎层的改进磁读取传感器的方法和装置。钉扎层包括钴 - 铁三元合金，其中选择钴 - 铁三元合金层的第三成分用于提高钴 - 铁三元合金层的电阻和磁致弹性各向异性。

8. 发明授权

US07190557B2 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US07190557B2
公开(公告)日：2007-03-13
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian R. York , Alexander M. Zeltser
发明人： Jinshan Li , Brian R. York , Alexander M. Zeltser
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

9. 发明授权

US6143388A Thin film disk with onset layer 失效
标题翻译：具有起始层的薄膜盘
公开(公告)号：US6143388A
公开(公告)日：2000-11-07
申请号：US976565
申请日：1997-11-24
申请人： Xiaoping Bian , Mary Frances Doerner , Shanlin Duan , Jinshan Li , Mohammad Taghi Mirzamaani
发明人： Xiaoping Bian , Mary Frances Doerner , Shanlin Duan , Jinshan Li , Mohammad Taghi Mirzamaani
IPC分类号： G11B5/64 , G11B5/66 , G11B5/73
CPC分类号： G11B5/732 , G11B5/656 , G11B5/66 , G11B5/7325 , Y10S428/90 , Y10T428/265
摘要： A thin film disk and a disk drive using the thin film disk are described. The disk has an onset layer between the underlayer and the boron containing magnetic layer, for example. The onset layer of the invention is useful because the boron containing magnetic layer material resists being deposited with the C-axis in plane. The onset layer material is selected to promote an in-plane C-axis orientation. When a boron containing magnetic layer is deposited on the onset layer the resulting in-plane PO is improved. The preferred onset layer is of hexagonal closed pack structured material which may be magnetic or nonmagnetic. Materials which are usable for the onset layer include a wide range of pure elements and cobalt alloys such as CoCr, CoPtCr, CoPtCrTa and CoCrB. The onset layer is particularly useful in allowing a ferromagnetic cobalt (Co) alloy containing a relatively high chromium and boron content to be deposited on nonmetallic substrates with the C-axis in the plane of disk without the need for negative bias during the sputtering of the underlayer.
摘要翻译：描述使用薄膜盘的薄膜盘和磁盘驱动器。例如，盘在底层和含硼磁性层之间具有起始层。本发明的起始层是有用的，因为含硼磁性层材料抵抗C平面上的沉积。选择起始层材料以促进面内C轴取向。当含硼磁性层沉积在起始层上时，所得到的面内PO得到改善。优选的起始层是可以是磁性或非磁性的六边形封闭包装结构材料。可用于起始层的材料包括宽范围的纯元素和钴合金，例如CoCr，CoPtCr，CoPtCrTa和CoCrB。起始层特别适用于允许含有相对较高的铬和硼含量的铁磁性钴（Co）合金沉积在非金属基体上，其中C轴在盘平面中，而不需要在溅射期间的负偏压底层

10. 发明授权

US5567523A Magnetic recording medium comprising a carbon substrate, a silicon or aluminum nitride sub layer, and a barium hexaferrite magnetic layer 失效
标题翻译：包括碳衬底，硅或氮化铝子层和六硼酸钡磁性层的磁记录介质
公开(公告)号：US5567523A
公开(公告)日：1996-10-22
申请号：US325069
申请日：1994-10-19
申请人： Stephen S. Rosenblum , Jinshan Li , Hidetaka Hayashi
发明人： Stephen S. Rosenblum , Jinshan Li , Hidetaka Hayashi
IPC分类号： G11B5/64 , G11B5/73 , G11B5/66
CPC分类号： G11B5/7315 , G11B5/656 , G11B5/7325 , Y10S428/90 , Y10T428/30
摘要： Magnetic recording media suitable for high density recording are provided by a carbon substrate, a magnetic recording layer, and at least one interlayer therebetween which provides one or more properties beneficial to preventing diffusion, inducing a preferred orientation in the magnetic recording layer and/or promoting adhesion between a carbon substrate and a barium hexaferrite-based magnetic recording layer. Alternatively, the present magnetic recording media may contain two different interlayers, which bar diffusion of carbon atoms from said substrate to said magnetic recording layer, improve adhesion between adjacent layers, induce an orientation in the magnetic recording layer, or any combination thereof. The present recording media are particularly advantageous for perpendicular recording. Processes for producing these magnetic recording media are also provided.
摘要翻译：适用于高密度记录的磁记录介质由碳基板，磁记录层及其间的至少一个中间层提供，其提供一个或多个有利于防止扩散的特性，在磁记录层中引入优选的取向和/或促进碳基板和六铁基钡基磁记录层之间的粘合。或者，本磁记录介质可以包含两个不同的夹层，其将碳原子从所述衬底扩散到所述磁记录层，改善相邻层之间的粘附性，引起磁记录层中的取向或其任何组合。本记录介质对于垂直记录是特别有利的。还提供了用于制造这些磁记录介质的方法。

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