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11. 发明申请

US20090051448A1 SECOND HARMONIC OSCILLATOR 有权
标题翻译：第二和谐振荡器
公开(公告)号：US20090051448A1
公开(公告)日：2009-02-26
申请号：US12035724
申请日：2008-02-22
申请人： Shinsuke Watanabe , Akira Inoue
发明人： Shinsuke Watanabe , Akira Inoue
IPC分类号： H03B1/00
CPC分类号： H03B19/14
摘要： A second harmonic oscillator has a series positive feedback configuration, suppresses output of a fundamental signal, and outputs a second harmonic signal having a frequency in a range from 1 GHz to 200 GHz generated inside of a circuit. The second harmonic oscillator includes: a transistor having a base terminal, a first emitter terminal, a second emitter terminal, and a collector terminal; a resonator circuit connected to the base terminal; a first transmission line short-circuiting stub connected to one of the two emitter terminals; and a second transmission line short-circuiting stub connected to the other of the two emitter terminals and having a line length obtained by adding one-fourth of one wavelength of the fundamental signal to an integer multiple of one-half wavelength of the fundamental signal.
摘要翻译：二次谐波振荡器具有串联正反馈配置，抑制基本信号的输出，并且输出在电路内部产生的频率范围为1GHz至200GHz的二次谐波信号。二次谐波振荡器包括：具有基极端子，第一发射极端子，第二发射极端子和集电极端子的晶体管; 连接到基座的谐振器电路; 连接到两个发射极端子之一的第一传输线短路短路; 以及连接到两个发射极端子中的另一个的第二传输线短路短路，并且具有通过将基本信号的一个波长的四分之一相加到基本信号的二分之一波长的整数倍而获得的线路长度。

12. 发明授权

US06827388B2 Seat arrangement structure for vehicle 失效
标题翻译：车辆座椅排列结构
公开(公告)号：US06827388B2
公开(公告)日：2004-12-07
申请号：US10663961
申请日：2003-09-16
申请人： Tetsuya Kayumi , Osamu Shirose , Shinsuke Watanabe , Yoshinori Nakamura , Ohsuke Koike
发明人： Tetsuya Kayumi , Osamu Shirose , Shinsuke Watanabe , Yoshinori Nakamura , Ohsuke Koike
IPC分类号： B60N200
CPC分类号： B60N2/36 , B60N2/01 , B60N2/06 , B60N2/305 , B60N3/10 , B60N2205/35
摘要： A seat arrangement structure for a vehicle including a pair of right and left first side seats; a first center seat disposed between the pair of first side seats; a pair of right and left second side seats; and a second center seat disposed between the pair of second side seats. The first center seat is made slidable only within a range at a back of a position where a front end portion of the first center seat is aligned with that of the pair of first side seats. Each of the pair of first side seats is made slidable only within a range in front of the position where the front end portion of the pair of first side seats is aligned with that of the first center seat. The width of the first center seat is made narrower than that of the pair of first side seats.
摘要翻译：一种用于车辆的座椅安排结构，包括一对左右第一侧座椅; 设置在所述一对第一侧座之间的第一中心座; 一对左右右侧座椅; 以及设置在所述一对第二侧座之间的第二中心座。第一中心座椅只能在第一中心座椅的前端部与一对第一侧座椅的前端部对准的位置的后方的范围内滑动。一对第一侧座中的每一个只能在一对第一侧座的前端部与第一中心座的前端对准的位置前方的范围内滑动。第一中心座的宽度比一对第一侧座的宽度窄。

13. 发明申请

US20110175686A1 HIGH FREQUENCY SECOND HARMONIC OSCILLATOR 审中-公开
标题翻译：高频二次谐波振荡器
公开(公告)号：US20110175686A1
公开(公告)日：2011-07-21
申请号：US12911764
申请日：2010-10-26
申请人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
发明人： Shinsuke Watanabe , Yoshihiro Tsukahara , Ko Kanaya , Shinichi Miwa
IPC分类号： H03B5/12
CPC分类号： H03B5/1847 , H03D2200/0086
摘要： A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal.
摘要翻译：高频二次谐波振荡器包括晶体管，在第一端连接到晶体管的基极或栅极的第一信号线，在第一端连接到第一信号线的第二端的第一并联电容器，在第一端连接到晶体管的集电极或漏极的第二信号线，在第一端连接到第二信号线的第二端并在第二端连接到地的第二并联电容器，以及连接在第一信号线和第二信号线之间的高容量电容器。第一信号线具有等于基本信号波长四分之一的奇整数倍的长度，加上或减去基波信号波长的十六分之一。

14. 外观设计

USD605607S1 Illuminated switch 有权
标题翻译：照明开关
公开(公告)号：USD605607S1
公开(公告)日：2009-12-08
申请号：US29318068
申请日：2008-05-13
申请人： Shinsuke Watanabe
设计人： Shinsuke Watanabe

15. 发明授权

US06317699B1 Device and method for calibrating a robot 有权
标题翻译：用于校准机器人的装置和方法
公开(公告)号：US06317699B1
公开(公告)日：2001-11-13
申请号：US09355507
申请日：1999-07-29
申请人： Shinsuke Watanabe , Yasuyuki Inoue , Hirotaka Morita , Hideo Nagata , Youichi Tanaka
发明人： Shinsuke Watanabe , Yasuyuki Inoue , Hirotaka Morita , Hideo Nagata , Youichi Tanaka
IPC分类号： G01B2100
CPC分类号： B25J9/1692 , G05B2219/39007 , G05B2219/39019
摘要： A calibrating device is composed of a movable portion having a degree of freedom movable in three axis directions orthogonal to each other, a displacement detector for detecting displacement of said movable portion as per degree of freedom, a universal joint having a three-axis rotating degree of freedom, which is attached to the tip end portion of said movable portion, a fixture attached to a free end of the universal joint, which is capable of being easily connected to the tip end portion of the wrist of the robot. The calibrating device measures displacement of the wrist tip end portion. That is, the invention provides a comparatively simple calibrating device and a calibrating method, in which automation is easy without requiring any complicated operations, using the calibrating device.
摘要翻译：校准装置由具有可在相互正交的三个轴线方向上移动的自由度的可动部分构成，用于检测所述可动部分的自由度的位移的位移检测器，具有三轴旋转度的万向接头的自由度安装在所述可动部的前端部，安装有能够容易地连接到机器人手腕的前端部的万向接头的自由端的固定件。校准装置测量手腕末端部的位移。也就是说，本发明提供了一种相对简单的校准装置和校准方法，其中使用校准装置，自动化容易而不需要任何复杂的操作。

16. 发明授权

US08728866B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08728866B2
公开(公告)日：2014-05-20
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L21/50 , H01L23/04
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

17. 发明申请

US20120025366A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120025366A1
公开(公告)日：2012-02-02
申请号：US13079055
申请日：2011-04-04
申请人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
发明人： Ko Kanaya , Yoshihiro Tsukahara , Shinsuke Watanabe
IPC分类号： H01L23/48 , H01L21/78
CPC分类号： H01L21/50 , H01L23/04 , H01L23/10 , H01L23/552 , H01L24/06 , H01L24/16 , H01L24/94 , H01L24/97 , H01L2224/0401 , H01L2224/0557 , H01L2224/06181 , H01L2224/16146 , H01L2224/16235 , H01L2224/94 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/10329 , H01L2924/1305 , H01L2924/1306 , H01L2924/16235 , H01L2924/351 , H01L2224/81 , H01L2224/83 , H01L2924/00 , H01L2224/05552
摘要： A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.
摘要翻译：一种制造半导体器件的方法包括：在体晶片的第一主表面上形成电路图案和第一金属膜; 从主体晶片的第二主表面形成穿透体晶片的通孔并到达第一金属膜; 在体晶片的第二主表面的一部分上形成第二金属膜，在通孔的内壁上，以及暴露在通孔中的第一金属膜上; 在盖晶片的第一主表面上形成凹部; 在盖晶片的第一主表面上形成第三金属膜，包括在盖晶片的凹部内部; 其中所述凹部面向所述电路图案，并且所述第一金属膜与所述第三金属膜接触，将所述盖晶片接合到所述主体晶片; 并且沿着通孔对接合体晶片和盖晶片进行切割。

18. 发明申请

US20120023206A1 ADDRESS DISTRIBUTING METHOD AND DEVICE 审中-公开
标题翻译：地址分配方法和设备
公开(公告)号：US20120023206A1
公开(公告)日：2012-01-26
申请号：US13083252
申请日：2011-04-08
申请人： Katsumi Kusama , Atsushi Takahashi , Taro Takahashi , Shinsuke Watanabe
发明人： Katsumi Kusama , Atsushi Takahashi , Taro Takahashi , Shinsuke Watanabe
IPC分类号： G06F15/177
CPC分类号： H04L61/2038 , H04L12/40032 , H04L29/12028 , H04L29/12254 , H04L61/103 , H04L2012/40293
摘要： A system is disclosed that includes a plurality of node devices arranged in sequence; a first node device operable to generate a device count frame with a device count number and transmit the device count frame to the next node device in the sequence; a control device in communication with at least the first node device; wherein each node device is operable to increase the device count number of the device count frame upon receipt of the device count frame and transmit the device count frame to the next node device in sequence; and wherein the control device operable to receive the device count frame to the first node device after each node device has increased the device count number of the device count frame and assign an IP address for each node device, the number of IP addresses determined by the device count number.
摘要翻译：公开了包括依次排列的多个节点装置的系统; 第一节点设备，可操作以生成具有设备计数号的设备计数帧，并以该顺序将设备计数帧发送到下一个节点设备; 至少与所述第一节点设备通信的控制设备; 其中每个节点设备可操作以在接收到所述设备计数帧时增加所述设备计数帧的设备计数数，并且将所述设备计数帧依次发送到所述下一个节点设备; 并且其中所述控制设备可操作以在每个节点设备增加了所述设备计数帧的设备计数号并为每个节点设备分配IP地址之后，向所述第一节点设备接收所述设备计数帧，由所述第一节点设备确定的IP地址数量设备数量。

19. 发明授权

US07777571B2 High frequency power amplifier 有权
标题翻译：高频功率放大器
公开(公告)号：US07777571B2
公开(公告)日：2010-08-17
申请号：US12147542
申请日：2008-06-27
申请人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
发明人： Seiki Gotou , Akira Inoue , Ko Kanaya , Shinsuke Watanabe
IPC分类号： H03F3/191
CPC分类号： H03F3/604 , H01L23/66 , H01L24/48 , H01L24/49 , H01L2223/6655 , H01L2224/48091 , H01L2224/49175 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/19041 , H01L2924/19051 , H01L2924/30107 , H01L2924/3011 , H03F2200/237 , H03F2200/255 , H03F2200/423 , H03F2200/429 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A high frequency power amplifier comprises: a multi-finger transistor with transistor cells electrically connected in parallel; an input side matching circuit connected to gate electrodes of the transistor cells; and resonant circuits respectively connected between the gate electrode of a transistor cell and the input side matching circuit. The resonant circuit resonates at a second harmonic of the operating frequency of the transistor or within a predetermined range of frequencies having a center at the second harmonic of the operating frequency, and becomes a high-impedance load at the second harmonic, or an open load.
摘要翻译：高频功率放大器包括：具有并联电连接的晶体管单元的多指晶体管; 连接到晶体管单元的栅极的输入侧匹配电路; 以及分别连接在晶体管单元的栅电极和输入侧匹配电路之间的谐振电路。谐振电路以晶体管的工作频率的二次谐波或在具有工作频率的二次谐波的中心的预定频率范围内谐振，并且变为二次谐波处的高阻抗负载或开路负载。

20. 发明授权

US07714664B2 Cascode circuit 失效
标题翻译：串联电路
公开(公告)号：US07714664B2
公开(公告)日：2010-05-11
申请号：US12421664
申请日：2009-04-10
申请人： Ko Kanaya , Seiki Goto , Shinsuke Watanabe
发明人： Ko Kanaya , Seiki Goto , Shinsuke Watanabe
IPC分类号： H03F3/04
CPC分类号： H03F1/226 , H03F1/0261 , H03F3/1935 , H03F2200/18 , H03F2200/27 , H03F2200/451 , H03F2200/534 , H03F2200/541
摘要： A cascode circuit for a high-gain or high-output millimeter-wave device that operates with stability. The cascode circuit including two cascode-connected transistors includes: a first high electron mobility transistor (HEMT) including a source that is grounded; a second HEMT including a source connected to a drain of the first HEMT; a reflection gain restricting resistance connected to the gate of the second HEMT, for restricting reflection gain; and an open stub connected to a side of the reflection gain restricting resistance which is opposite the side connected to the second HEMT, for short-circuiting high-frequency signals at a predetermined frequency and nearby frequencies.
摘要翻译：用于稳定运行的高增益或高输出毫米波器件的共源共栅电路。包括两个共源共栅连接的晶体管的共源共栅电路包括：包括接地的源的第一高电子迁移率晶体管（HEMT）; 包括连接到第一HEMT的漏极的源的第二HEMT; 连接到第二HEMT的栅极的反射增益限制电阻，用于限制反射增益; 以及连接到反射增益限制电阻的与连接到第二HEMT的一侧相反的一侧的开路短路，用于以预定频率和附近频率短路高频信号。

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