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11. 发明申请

US20070259470A1 Method of Creating a Predefined Internal Pressure Within a Cavity of a Semiconductor Device 有权
标题翻译：在半导体器件的腔内创建预定内部压力的方法
公开(公告)号：US20070259470A1
公开(公告)日：2007-11-08
申请号：US11777162
申请日：2007-07-12
申请人： Hans Quenzer , Peter Merz , Marteu Oldsen , Wolfgang Reinert
发明人： Hans Quenzer , Peter Merz , Marteu Oldsen , Wolfgang Reinert
IPC分类号： H01L21/00
CPC分类号： B81B7/0077 , B81C2203/019
摘要： A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
摘要翻译：一种在半导体器件的空腔内产生预定的内部压力的方法，所述方法包括提供所述半导体器件，所述半导体器件包括半导体氧化物区域，所述半导体氧化物区域连续地布置在所述半导体器件的空腔和所述半导体器件的外表面之间将第一温度下的惰性气体的半导体器件暴露于周围环境预定时间段，并且在预定时间段到期之后设定与第一温度不同的第二温度，显示出半导体氧化物区域在第一温度下对于惰性气体的渗透性高于第二温度。

12. 发明授权

US08039950B2 Solder material lining a cover wafer attached to wafer substrate 有权
标题翻译：焊接材料衬在附着于晶片衬底的盖子晶片上
公开(公告)号：US08039950B2
公开(公告)日：2011-10-18
申请号：US12092892
申请日：2006-11-08
申请人： Marten Oldsen , Wolfgang Reinert , Peter Merz
发明人： Marten Oldsen , Wolfgang Reinert , Peter Merz
IPC分类号： H01L23/48 , H01L21/30
CPC分类号： B81C1/00269 , Y10T428/23
摘要： The invention relates to a cover wafer with a core and with an inside, whereby the inside has one or more annular outer areas, (an) annular area(s), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) has/have a buffer layer, which has a wetting angle of 265° C. to 450° C. The invention also relates to a component cover having one of the areas which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of a solder material, and to a method for the production thereof.
摘要翻译：本发明涉及一种具有芯部并具有内部的覆盖晶片，由此内部具有一个或多个环形外部区域（一个）环形区域，该环形区域向内邻接外部区域，并具有（a）内部区域和内部仅具有一个环形外部区域的部件盖。本发明的特征在于，至少一个或多个区域具有缓冲层，其对于在> 265℃至450℃范围内熔化的金属共晶溶液具有<35°的润湿角度。本发明还涉及具有可比较的方式具有所述缓冲层的区域之一的部件盖。本发明还涉及可以使用微系统技术插入的晶片组件或组件，并且其具有借助于焊料材料应用的覆盖晶片或组件盖以及其制造方法。

13. 发明申请

US20080283991A1 Housed active microstructures with direct contacting to a substrate 有权
标题翻译：与底物直接接触的有活性微结构
公开(公告)号：US20080283991A1
公开(公告)日：2008-11-20
申请号：US12153174
申请日：2008-05-14
申请人： Wolfgang Reinert
发明人： Wolfgang Reinert
IPC分类号： H01L23/02
CPC分类号： B81B7/007 , B81C2203/0118 , B81C2203/032 , B81C2203/035 , G01P1/023 , H01L24/16 , H01L24/48 , H01L25/165 , H01L2224/0401 , H01L2224/0557 , H01L2224/13025 , H01L2224/48 , H01L2924/00014 , H01L2924/0002 , H01L2924/0102 , H01L2924/01046 , H01L2924/01068 , H01L2924/01077 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , H01L2924/16235 , H01L2924/3011 , H01L2924/00 , H01L2224/05552 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A microstructured component with microsensors or other active mircrocomponent is provided. The microstructured component includes a substrate and at least one housing arranged on the substrate with one or more active microstructures situated on it.
摘要翻译：提供具有微传感器或其它活性微量元件的微结构元件。微结构组件包括衬底和布置在衬底上的至少一个壳体，其上设置有一个或多个活性微结构。

14. 发明申请

US20150048470A1 ELECTROMAGNETIC RADIATION MICRO DEVICE, WAFER ELEMENT AND METHOD FOR MANUFACTURING SUCH A MICRO DEVICE 有权
标题翻译：电磁辐射微型器件，波形元件和制造这种微型器件的方法
公开(公告)号：US20150048470A1
公开(公告)日：2015-02-19
申请号：US14384318
申请日：2012-03-23
申请人： Wolfgang Reinert
发明人： Wolfgang Reinert
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02165 , G01J5/0215 , G01J5/0235 , G01J5/024 , G01J5/045 , G01J5/046 , G01J5/0803 , G01J5/0806 , G01J5/0862 , G01J5/0875 , G01J5/20 , G02B1/115 , H01L31/18 , H01L2924/16235
摘要： The invention refers to an electromagnetic radiation sensor micro device for detecting electromagnetic radiation, which device comprises a substrate and a cover at least in part consisting of an electromagnetic radiation transparent material, and comprising a reflection reducing coating and providing a hermetic sealed cavity and an electromagnetic radiation detecting unit arranged within the cavity. The reflection reducing coating is arranged in form of a multi-layer thin film stack, which comprises a first layer and a second layer arranged one upon the other. The first layer has a first refractive index and the second layer has a second refractive index different from the one of said first layer. First and second layer are of such layer thickness that for a certain wavelength there is destructive interference. The invention also refers to a wafer element as well as method for manufacturing such a device.
摘要翻译：本发明涉及一种用于检测电磁辐射的电磁辐射传感器微型装置，该装置包括至少部分由电磁辐射透明材料构成的基底和盖，并且包括反射降低涂层并提供气密密封腔和电磁辐射放射线检测单元布置在腔内。反射降低涂层以多层薄膜叠层的形式布置，其包括彼此排列的第一层和第二层。第一层具有第一折射率，第二层具有与所述第一层不同的第二折射率。第一层和第二层具有这样的层厚度，对于一定的波长具有破坏性干扰。本发明还涉及一种晶片元件及其制造方法。

15. 发明授权

US08590376B2 Microelectromechanical inertial sensor with atmospheric damping 有权
标题翻译：具有大气阻尼功能的微机电惯性传感器
公开(公告)号：US08590376B2
公开(公告)日：2013-11-26
申请号：US12934783
申请日：2009-03-25
申请人： Wolfgang Reinert , Martin Heller
发明人： Wolfgang Reinert , Martin Heller
IPC分类号： G01P1/02 , G01P15/125 , G01C19/56
CPC分类号： G01P1/003 , G01C19/5783 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： The present invention relates to an inertial sensor, preferably an acceleration sensor or multi-axis acceleration sensor as a microelectromechanical construction element, said sensor comprising a housing with at least one first gas-filled cavity in which a first detection unit is disposed moveably relative to the housing for detection of an acceleration to be detected, wherein the inertial sensor comprises a damping structure.
摘要翻译：本发明涉及惯性传感器，优选地是作为微机电结构元件的加速度传感器或多轴加速度传感器，所述传感器包括具有至少一个第一气体填充空腔的壳体，第一检测单元相对于用于检测待检测的加速度的壳体，其中惯性传感器包括阻尼结构。

16. 发明授权

US07781331B2 Method for producing electrically conductive bushings through non-conductive or semiconductive substrates 有权
标题翻译：通过非导电或半导体衬底生产导电衬套的方法
公开(公告)号：US07781331B2
公开(公告)日：2010-08-24
申请号：US12093089
申请日：2006-11-08
申请人： Wolfgang Reinert
发明人： Wolfgang Reinert
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L23/3114 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01016 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , Y10T29/49165 , H01L2224/13099 , H01L2924/00 , H01L2224/05099
摘要： The present invention relates to a method for producing electrical bushings through non-conductive or semiconductive substrates, which are particularly suitable for electrical applications. The method is characterized in that a semiconductor substrate or a non-conductive substrate (13) whose front side has an electrically conductive contact point (6) at at least one location is provided with a recess (7) from its rear side such that the recess (1) on the front side of the substrate ends under that location or one of the locations at which the electrically conductive contact point or one of the electrically conductive contact points is situated and is completely covered by the latter, to which an electrically conductive structure (9) which establishes a conductive connection between the respective contact point and the rear-side surface (10, 11, 12) of the substrate through the recess or at least one of the recesses is applied from the rear side of the substrate. The invention also relates to substrates and components having a design that is predetermined by the method according to the invention.
摘要翻译：本发明涉及一种通过非导电或半导体衬底生产电气衬套的方法，其特别适用于电气应用。该方法的特征在于，在其至少一个位置处其前侧具有导电接触点（6）的半导体衬底或非导电衬底（13）从其后侧设置有凹部（7），使得衬底正面的凹槽（1）在该位置或导电接触点或导电接触点之一的位置之一处终止，并且由导电接触点或导电接触点之一完全覆盖，导电接触点通过凹部或至少一个凹部在基板的相应接触点和后侧表面（10,11,12）之间建立导电连接的结构（9）从基板的后侧施加。本发明还涉及具有通过根据本发明的方法预定的设计的基底和部件。

17. 发明申请

US20100025845A1 MICROMECHANICAL HOUSING COMPRISING AT LEAST TWO CAVITIES HAVING DIFFERENT INTERNAL PRESSURE AND/OR DIFFERENT GAS COMPOSITIONS AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：包含具有不同内部压力和/或不同气体组成的至少两个腔室的微生物壳体及其生产方法
公开(公告)号：US20100025845A1
公开(公告)日：2010-02-04
申请号：US12296189
申请日：2007-04-04
申请人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
发明人： Peter Merz , Wolfgang Reinert , Marten Oldsen , Oliver Schwarzelbach
IPC分类号： H01L23/02 , H01L21/54
CPC分类号： B81B7/0038 , B81B7/02 , B81C1/00285
摘要： The present application relates to a multiple component which is to be subsequently individualized by forming components containing active structures, in addition to a corresponding component which can be used in microsystem technology systems. The multiple component and/or component comprises a flat substrate and also a flat cap structure which are bound to each other such that they surround at least one first and one second cavity per component, which are sealed against each other and towards the outside. The first of the two cavities is provided with getter material and due to the getter material has a different internal pressure and/or a different gas composition than the second cavity. The present application also relates to a method for producing the type of component and/or components for which gas mixtures of various types of gas have a different absorption ratio in relation to the getter material.
摘要翻译：本申请涉及除了可用于微系统技术系统的相应组件之外，通过形成包含活性结构的组分，随后将其个性化的多组分。多个部件和/或部件包括平坦的基板以及平的盖结构，它们彼此结合，使得它们围绕每个部件至少一个第一和一个第二腔，它们被彼此密封并朝向外部。两个空腔中的第一个具有吸气材料，并且由于吸气材料具有与第二腔体不同的内部压力和/或不同的气体组成。本申请还涉及一种用于生产各种类型气体的气体混合物相对于吸气剂材料具有不同吸收比的组分和/或组分的类型的方法。

18. 发明申请

US20080317995A1 Cover Wafer or Component Cover, Wafer Part, or Component That Can Be Inserted Using Microsystems Technology, and Soldering Method for Connecting Corresponding Wafer or Component Parts 有权
标题翻译：可以使用微系统技术插入的盖板或组件盖，晶圆部件或组件，以及连接相应的晶片或组件部件的焊接方法
公开(公告)号：US20080317995A1
公开(公告)日：2008-12-25
申请号：US12092892
申请日：2006-11-08
申请人： Marten Oldsen , Wolfgang Reinert , Peter Merz
发明人： Marten Oldsen , Wolfgang Reinert , Peter Merz
IPC分类号： B32B1/00 , B23K31/02
CPC分类号： B81C1/00269 , Y10T428/23
摘要： The invention relates to a cover wafer with a core (1) and with an inside (7, 10, 11), whereby the inside has one or more annular outer areas (7), (an) annular area(s) (10), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s) (11), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) (10) has/have a buffer layer, which has a wetting angle of 265° C. to 450° C. The invention also relates to a component cover having one of the areas (7), (10) and (11), which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of the solder material, and to a method for the production thereof.
摘要翻译：本发明涉及一种具有芯体（1）并具有内部（7,10,11）的覆盖晶片，由此内部具有一个或多个环形外部区域（7），（a）环形区域（10），其内部邻接外部区域，并且具有（a）内部区域（11）以及在其内部仅具有一个环形外部区域的部件盖。本发明的特征在于，至少一个或多个区域（10）具有缓冲层，对于在> 265℃至450℃范围内熔化的金属共晶溶液具有<35°的润湿角度本发明还涉及具有区域（7），（10）和（11）中的一个的组件盖，其具有可比较的方式的所述缓冲层。本发明还涉及可以使用微系统技术插入的晶片组件或组件，并且其具有借助于焊料材料应用的覆盖晶片或组件盖，以及其制造方法。

19. 发明申请

US20080233740A1 Method for Producing Electrically Conductive Bushings Through Non-Conductive or Semiconductive Substrates 有权
标题翻译：通过非导电或半导电基板生产导电衬套的方法
公开(公告)号：US20080233740A1
公开(公告)日：2008-09-25
申请号：US12093089
申请日：2006-11-08
申请人： Wolfgang Reinert
发明人： Wolfgang Reinert
IPC分类号： H01L21/768 , H05K3/00
CPC分类号： H01L23/3114 , H01L21/486 , H01L21/76898 , H01L23/147 , H01L24/10 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05024 , H01L2224/05548 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/13 , H01L2224/131 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01016 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01068 , H01L2924/01072 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/10329 , H01L2924/14 , H01L2924/1433 , H01L2924/1461 , Y10T29/49165 , H01L2224/13099 , H01L2924/00 , H01L2224/05099
摘要： The present invention relates to a method for producing electrical bushings through non-conductive or semiconductive substrates, which are particularly suitable for electrical applications. The method is characterized in that a semiconductor substrate or a non-conductive substrate (13) whose front side has an electrically conductive contact point (6) at least one location is provided with a recess (7) from its rear side such that the recess (1) on the front side of the substrate ends under that location or one of the locations at which the electrically conductive contact point or one of the electrically conductive contact points is situated and is completely covered by the latter, to which an electrically conductive structure (9) which establishes a conductive connection between the respective contact point and the rear-side surface (10, 11, 12) of the substrate through the recess or at least one of the recesses is applied from the rear side of the substrate. The invention also relates to substrates and components having a design that is predetermined by the method according to the invention.
摘要翻译：本发明涉及一种通过非导电或半导体衬底生产电气衬套的方法，其特别适用于电气应用。该方法的特征在于，其前侧具有至少一个位置的导电接触点（6）的半导体衬底或非导电衬底（13）从其后侧设置有凹部（7），使得凹部（1）在基板的前侧终止于导电接触点或导电接触点之一位于该位置处的一个位置，并且由导电接触点或导电接触点之一完全覆盖，导电结构（9），其通过所述凹部或所述凹部中的至少一个在所述基板的相应接触点和后侧表面（10,11,12）之间建立导电连接，从所述基板的后侧施加。本发明还涉及具有通过根据本发明的方法预定的设计的基底和部件。

20. 发明授权

US07410828B2 Method of creating a predefined internal pressure within a cavity of a semiconductor device 有权
标题翻译：在半导体器件的空腔内产生预定的内部压力的方法
公开(公告)号：US07410828B2
公开(公告)日：2008-08-12
申请号：US11777162
申请日：2007-07-12
申请人： Hans Joachim Quenzer , Peter Merz , Marten Oldsen , Wolfgang Reinert
发明人： Hans Joachim Quenzer , Peter Merz , Marten Oldsen , Wolfgang Reinert
IPC分类号： H01L21/50 , H01L21/30
CPC分类号： B81B7/0077 , B81C2203/019
摘要： A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.
摘要翻译：一种在半导体器件的空腔内产生预定的内部压力的方法，所述方法包括提供所述半导体器件，所述半导体器件包括半导体氧化物区域，所述半导体氧化物区域连续地布置在所述半导体器件的空腔和所述半导体器件的外表面之间将第一温度下的惰性气体的半导体器件暴露于周围环境预定时间段，并且在预定时间段到期之后设定与第一温度不同的第二温度，显示出半导体氧化物区域在第一温度下对于惰性气体的渗透性高于第二温度。

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