专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5158689A Method for purification of waste water 失效
标题翻译：废水净化方法
公开(公告)号：US5158689A
公开(公告)日：1992-10-27
申请号：US586396
申请日：1990-09-20
申请人： Tooru Ishii , Kiichiro Mitsui , Kunio Sano , Akira Inoue , Hideki Sogabe
发明人： Tooru Ishii , Kiichiro Mitsui , Kunio Sano , Akira Inoue , Hideki Sogabe
IPC分类号： C02F1/74 , C02F11/08
CPC分类号： C02F11/08
摘要： A method for the purification of waste water by the use of a heat-exchanger type reaction vessel composed of a plurality of inner tubes and a shell defining jointly with the outer peripheries of the inner tubes a passage for the flow of a heat transfer medium, which method comprises passing said waste water through said inner tubes and, at the same time, feeding a molecular oxygen-containing gas to the flow of said waste water thereby establishing contact between said waste water and said feed gas and consequently effecting wet oxidation of the impurities present in said waste water.
摘要翻译：一种通过使用由多个内管和与内管的外周共同限定的壳体组成的热交换器型反应容器来净化废水的方法，用于传热介质流动的通道，该方法包括使所述废水通过所述内管，并且同时将含分子氧的气体供给到所述废水的流中，从而建立所述废水和所述进料气体之间的接触，从而实现所述废水的湿氧化存在于所述废水中的杂质。

12. 发明授权

US5145587A Method for treatment of waste water 失效
标题翻译：废水处理方法
公开(公告)号：US5145587A
公开(公告)日：1992-09-08
申请号：US622599
申请日：1990-12-05
申请人： Tooru Ishii , Kiichiro Mitsui , Kunio Sano , Akira Inoue
发明人： Tooru Ishii , Kiichiro Mitsui , Kunio Sano , Akira Inoue
IPC分类号： B01J23/30 , B01J23/34 , B01J23/63 , B01J23/83 , C02F1/72 , C02F11/08
CPC分类号： C02F11/08 , B01J23/30 , B01J23/34 , B01J23/63 , B01J23/83 , C02F1/725
摘要： A method for the treatment of waste water, which comprises wet oxidizing said waste water with a molecular oxygen-containing gas of an amount 1.0 to 1.5 times the amount thereof theoretically necessary for decomposing at least one substance selected from the group consisting of organic substances and inorganic substances present in said waste water to nitrogen, carbon dioxide, and water at a temperature not exceeding 370.degree. C. under a pressure enough for said waste water to retain a liquid phase in the presence of a solid catalyst comprising of a first catalytic component formed of titanium dioxide, a second catalytic component formed of the oxide of an element of lanthanide series, and a third catalytic component containing at least one metal selected from the group consisting of manganese, iron, cobalt, nickel, tungsten, copper, silver, gold, platinum, palladium, rhodium, ruthenium, and iridium or a water-insoluble or sparingly water-soluble compound of said metal.

13. 发明授权

US6072325A Probe device 失效
标题翻译：探头设备
公开(公告)号：US6072325A
公开(公告)日：2000-06-06
申请号：US666789
申请日：1996-06-19
申请人： Kunio Sano
发明人： Kunio Sano
IPC分类号： G01R1/067 , G01R31/28 , G01R1/073 , G01R31/02
CPC分类号： G01R31/2887 , G01R1/06705
摘要： A probe device for testing a wafer divided into IC chips has a vessel that accommodates a wafer mounting stand and a flexible probe card having contactor bumps. The vessel is configured in a separatable manner of a grounded aluminum cover portion to which the probe card is integrally fixed and a base portion fixed to the wafer mounting stand. The interior of the vessel is sealed with the wafer and the probe card facing each other therein. A space above the probe card forms a damper chamber into which a fluid is introduced in such a manner that the pressure thereof presses the bumps on the probe card against the wafer. Bumps in a peripheral edge portion of the probe card are placed into contact with electrodes in a peripheral edge portion of the vessel, and thence to a test head. The above configuration can prevent the effects of external electrical noise and thus enable stable electrical measurements unaffected by changes in ambient temperature. In order to remove the effects of thermal expansion of the probe card and the wafer, graticules are formed in each of X and Y directions around an array of bumps. The coordinate positions of the bumps on the probe card under normal temperature conditions are previously stored in a storage unit, the graticules are read by an imaging unit when the probe card has thermally expanded, the current coordinate positional data for the bumps is obtained from the results of this read and the stored bump coordinate positional data, and this is used to control the position of the mounting stand.
摘要翻译：用于测试分成IC芯片的晶片的探针装置具有容纳晶片安装支架的容器和具有接触器凸块的柔性探针卡。容器以可分离的方式配置在探针卡整体固定到的接地铝盖部分上，固定在晶片安装台上的基座部分。容器的内部用晶片和探针卡彼此面对地密封。探针卡上方的空间形成阻尼室，以这样一种方式引入流体的阻尼室，其压力将探针卡上的凸块按压在晶片上。探针卡的外围边缘部分中的凸起被放置成与容器的外围边缘部分中的电极接触，然后到达测试头。上述配置可以防止外部电气噪声的影响，从而使稳定的电气测量不受环境温度变化的影响。为了消除探针卡和晶片的热膨胀的影响，沿着凸起阵列的X和Y方向各自形成刻度。在普通温度条件下探针卡上的凸块的坐标位置预先存储在存储单元中，当探针卡热膨胀时，由成像单元读取刻度线，从目标坐标位置数据该读取的结果和存储的凸起坐标位置数据，并且这用于控制安装支架的位置。

14. 发明授权

US6051198A Catalyst for purifying fumigation exhaust gases and a method of purifying fumigation exhaust gases 失效
标题翻译：用于净化熏蒸废气的催化剂和净化熏蒸废气的方法
公开(公告)号：US6051198A
公开(公告)日：2000-04-18
申请号：US860464
申请日：1997-07-07
申请人： Kunio Sano , Kazuyoshi Nishikawa , Kazunori Yoshino , Kazumi Okuhara
发明人： Kunio Sano , Kazuyoshi Nishikawa , Kazunori Yoshino , Kazumi Okuhara
IPC分类号： B01D53/86 , B01J20/18 , B01J20/20 , B01J21/06 , B01J23/22 , B01J23/24 , B01J23/26 , B01J23/30 , B01J23/62 , B01J23/63 , B01J23/648 , B01J23/652 , B01J23/68 , B01J23/72 , B01J23/85 , B01J23/888 , B01J23/89 , B01J35/10 , C01B7/00
CPC分类号： B01J23/888 , B01D53/8659 , B01D53/8662 , B01J23/22 , B01J23/24 , B01J23/6482 , B01J23/652 , B01J23/6527 , B01J23/72 , B01J23/8993 , B01J35/10 , B01D2255/40 , B01J35/1038 , B01J35/1042 , B01J35/1061 , B01J35/1066
摘要： A catalyst of the present invention is adapted for purifying fumigation exhaust gases, and comprises, as a catalyst component A, a metal oxide containing at least one, or a composite oxide containing two or more metals selected from the group consisting of Ti, Si and Zr; and, as a catalyst component B, an oxide containing at least one selected from the group consisting of V, Cu, W and Cr; and has an average micropore diameter in the range of 0.010 to 0.070 .mu.m, a total micropore volume in the range of 0.30 to 0.60 ml/g, and a specific surface area in the range of 50 to 200 m.sup.2 /g. The use of this catalyst makes it possible to economically and efficiently purify fumigation exhaust gas.
摘要翻译： PCT No.PCT / JP95 / 02749 Sec。 371日期1997年7月7日 102（e）日期1997年7月7日PCT 1995年12月27日PCT PCT。公开号WO96 / 20786 日本1996年7月11日本发明的催化剂适用于净化熏蒸废气，并且包含作为催化剂组分A的含有至少一种或包含两种或更多种选自以下的金属的复合氧化物的金属氧化物：的Ti，Si和Zr; 作为催化剂成分B，含有选自V，Cu，W和Cr中的至少一种的氧化物; 平均微孔直径为0.010〜0.070μm，总微孔体积为0.30〜0.60ml / g，比表面积为50〜200m2 / g。使用该催化剂可以经济有效地净化熏蒸废气。

15. 发明授权

US5982183A Probing method and device with contact film wiper feature 失效
标题翻译：具有接触膜刮水器特性的探测方法和装置
公开(公告)号：US5982183A
公开(公告)日：1999-11-09
申请号：US655485
申请日：1996-05-30
申请人： Kunio Sano
发明人： Kunio Sano
IPC分类号： G01R1/073 , G01R31/02
CPC分类号： G01R1/0735 , Y10T29/4913
摘要： A probing device for inspecting semiconductor devices such as IC chips comprises a mounting section for supporting a silicon substrate wafer (i.e., an object to be inspected), a moving section for moving a probe card in such a way that contacts formed on a surface of the probe card can be pushed against electrode pads formed on the wafer, and a measuring section. The probe card is formed by joining a silicon nitride (Si.sub.3 N.sub.4) thin film (whose thermal expansion coefficient is roughly equal to that of the silicon wafer) to a lower surface of a wiring substrate. The wiring substrate is composed of a polyamide thin film (as an insulating layer) and conductive layers (as conductive signal line paths) formed in and on both the surfaces of the polyamide this film. Further, bumps (contacts) are arranged on the lower surface of the silicon nitride thin film. A plurality of through holes are formed penetrating from the upper surface of the wiring substrate to the lower surface of the silicon nitride film at an area outside the bump arrangement region. These through holes mechanically connect the silicon nitride thin film to the wiring substrate and further electrically connect the bumps to the circumferential portion of the probe card body via the conductive layers. Since the thermal expansion coefficient of the silicon wafer is roughly equal to that of the silicon nitride thin film of the probe card, even when the silicon wafer is heated or cooled for electrical measurements, it is possible to securely keep contact between the contacts (bumps) of the probe card and the electrode pads formed on the IC chips of the wafer without dislocation.
摘要翻译：用于检查诸如IC芯片的半导体器件的探测装置包括用于支撑硅衬底晶片（即，待检查对象）的安装部分，用于移动探针卡的移动部分，使得形成在可以将探针卡推压到形成在晶片上的电极焊盘和测量部分。探针卡通过将布线基板的下表面的氮化硅（Si 3 N 4）薄膜（其热膨胀系数与硅晶片的热膨胀系数大致相等）而形成。布线基板由聚酰胺薄膜（作为绝缘层）和形成在该聚酰胺的两个表面上和之上的导电层（作为导电信号线路径）组成。此外，在氮化硅薄膜的下表面上设置凸块（触点）。多个通孔从布线基板的上表面穿过凸起布置区域外侧的区域形成到氮化硅膜的下表面。这些通孔将氮化硅薄膜机械地连接到布线基板，并且通过导电层进一步将凸块电连接到探针卡体的圆周部分。由于硅晶片的热膨胀系数与探针卡的氮化硅薄膜的热膨胀系数大致相同，所以即使将硅晶片加热或冷却进行电气测量，也可以牢固地保持触点之间的接触）和形成在晶片的IC芯片上的电极焊盘，而不脱位。

16. 发明授权

US5748006A High-frequency-transmission printed wiring board, probe card, and probe apparatus 失效
标题翻译：高频传输印刷线路板，探针卡和探头设备
公开(公告)号：US5748006A
公开(公告)日：1998-05-05
申请号：US555286
申请日：1995-11-08
申请人： Kunio Sano
发明人： Kunio Sano
IPC分类号： G01R1/073 , G01R1/067 , G01R31/28 , H01L21/66 , H05K1/02 , H05K3/46 , G01R31/02
CPC分类号： H05K1/0253 , G01R1/06772 , G01R31/2886 , H05K1/0237 , H05K2201/0715 , H05K2201/093 , H05K2201/09663 , H05K2201/09672 , H05K2201/0969
摘要： A probe card for examining the electrical characteristics of a plurality of IC chips formed on a semiconductor wafer has a card body and a printed wiring board. The card body has contact elements for contacting the electrodes pads of each IC chip. The printed wiring board has a plurality of transmission paths for transmitting a high-frequency signal to the contact elements. The printed wiring board has a plurality of signal lines disposed between first and second insulating layers, and first and second reference conductive plates opposing the signal lines through the first and second insulating layers, respectively. DC potentials that are different from each other are applied to the first and second reference conductive plates. The first and second reference conductive plates are arranged to be substantially offset from each other along each transmission path. The first and second reference conductive plates are arranged to slightly overlap each other. The overlapping amount is adjusted such that the impedances of the respective transmission paths are equal as a whole.
摘要翻译：用于检查形成在半导体晶片上的多个IC芯片的电特性的探针卡具有卡体和印刷线路板。卡体具有用于接触每个IC芯片的电极焊盘的接触元件。印刷电路板具有用于将高频信号发送到接触元件的多个传输路径。印刷布线板具有设置在第一和第二绝缘层之间的多条信号线，以及分别通过第一和第二绝缘层与信号线对置的第一和第二参考导电板。彼此不同的DC电位被施加到第一和第二参考导电板。第一和第二参考导电板被布置成沿着每个传输路径基本上彼此偏移。第一和第二参考导电板被布置成彼此稍微重叠。调整重叠量使得各个传输路径的阻抗整体上相等。

17. 发明授权

US5665610A Semiconductor device checking method 失效
标题翻译：半导体器件检查方法
公开(公告)号：US5665610A
公开(公告)日：1997-09-09
申请号：US650486
申请日：1996-05-17
申请人： Yoshiro Nakata , Shinichi Oki , Koichi Nagao , Kenzo Hatada , Shigeoki Mori , Takashi Sato , Kunio Sano
发明人： Yoshiro Nakata , Shinichi Oki , Koichi Nagao , Kenzo Hatada , Shigeoki Mori , Takashi Sato , Kunio Sano
IPC分类号： G01R31/28 , H01L21/66
CPC分类号： G01R31/2884 , G01R31/2831
摘要： A plated layer made of a metal which is hard to oxidize is formed on the surface of a check electrode of a semiconductor chip which is formed on a semiconductor wafer. A bump of a contactor is caused to come in contact with the check electrode on which the plated layer is formed in the direction perpendicular to the semiconductor chip. Then, a voltage is applied to the bump of the contactor to make a check such as burn-in on the semiconductor chip in a lump.
摘要翻译：在形成在半导体晶片上的半导体芯片的检查电极的表面上形成由难以氧化的金属制成的镀层。使接触器的凸起与垂直于半导体芯片的方向上形成有镀层的检查电极接触。然后，向接触器的凸起施加电压，以一次性地对半导体芯片进行诸如老化的检查。

18. 发明授权

US5604446A Probe apparatus 失效
标题翻译：探头设备
公开(公告)号：US5604446A
公开(公告)日：1997-02-18
申请号：US512915
申请日：1995-08-09
申请人： Kunio Sano
发明人： Kunio Sano
IPC分类号： G01R31/26 , G01R1/073 , H01L21/66 , G01R31/02
CPC分类号： G01R1/0735
摘要： The probe apparatus for a semiconductor wafer has a work table on which a wafer is placed. A printed wiring board having a high rigidity is situated above the work table. A flexible membrane probe card is detachably mounted on the printed wiring board. The probe card has a main region in which contact elements to be brought into contact with electrode pads of the semiconductor wafer are arranged. A rigid rectangular frame is attached to the rear surface of the probe card so as to flatten the probe card. An expandable chamber for bringing the contact elements of the main region into elastic contact with the electrode pads of the semiconductor wafer, is provided behind the main region of the probe card. A guide is arranged to surround the expandable chamber in tight contact therewith. A pushing plate having a hard base and elastic layers is arranged between the expandable chamber and the probe card. The main region is pushed out by the pushing plate in a state parallel to the wafer.
摘要翻译：用于半导体晶片的探针装置具有放置晶片的工作台。具有高刚性的印刷线路板位于工作台的上方。柔性膜探针卡可拆卸地安装在印刷电路板上。探针卡具有与半导体晶片的电极焊盘接触的接触元件的主区域。将刚性矩形框架连接到探针卡的后表面，以便使探针卡平坦化。用于使主区域的接触元件与半导体晶片的电极焊盘弹性接触的可扩展室设置在探针卡的主区域后面。布置引导件以与其紧密接触的方式围绕可膨胀室。具有硬底和弹性层的推板布置在可扩张腔和探针卡之间。主体区域在与晶片平行的状态下被推板推出。

19. 发明授权

US4957717A Method of disposal of organic chlorine compounds by combustion 失效
标题翻译：通过燃烧处理有机氯化合物的方法
公开(公告)号：US4957717A
公开(公告)日：1990-09-18
申请号：US461120
申请日：1990-01-04
申请人： Seiichiro Imamura , Sadao Terui , Kunio Sano , Kazuyoshi Nishikawa , Akira Inoue
发明人： Seiichiro Imamura , Sadao Terui , Kunio Sano , Kazuyoshi Nishikawa , Akira Inoue
IPC分类号： F23G7/00 , F23G7/06 , F23G7/07
CPC分类号： F23G7/07 , F23G7/00
摘要： A method of disposing of organic chlorine compounds by burning them in contact with a catalyst of composite oxides selected from titanium-silicon composite oxides, titanium-zirconium composite oxides, and titanium-silicon-zirconium composite oxides, whereby the resulting hydrogen chloride (HCl) is adsorbed by a basic absorbent.

20. 发明授权

US6084419A Method and apparatus for inspecting semiconductor integrated circuits, and contactor incorporated in the apparatus 失效
标题翻译：用于检查半导体集成电路的方法和装置以及包含在该装置中的接触器
公开(公告)号：US6084419A
公开(公告)日：2000-07-04
申请号：US28091
申请日：1998-02-23
申请人： Takashi Sato , Kunio Sano
发明人： Takashi Sato , Kunio Sano
IPC分类号： G01R31/28 , G01R31/02 , G01R1/04 , G01R31/302
CPC分类号： G01R31/2886
摘要： A wafer inspecting apparatus inspects the electric characteristics of IC chips of a wafer W. The inspection is carried out by simultaneously examining the inspecting electrodes of all IC chips in a contact manner in the state where the wafer W is held on the main chuck. The wafer inspecting apparatus is provided with a contactor, and this contactor is made up of a first contactor, a second contactor and a driving mechanism. The first contactor has a large number of contact projections on the lower surface thereof and a large number of contact electrodes on the entire upper surface thereof. The contact projections are brought into simultaneous contact with the inspecting electrodes. The contact electrodes are electrically connected to the contact projections, respectively. The second contactor has a number of contact elements, such as pogo-pins, which are brought into contact with the contact electrodes of the first contactor. The second contactor is movable, and the driving mechanism moves this second contactor in the X- and Y-directions in such a manner that the contact elements and the contact electrodes are sequentially brought into contact with each other. The contactor may include a third contactor as well. The third contactor is arranged between the first contactor and the wafer W.
摘要翻译：晶片检查装置检查晶片W的IC芯片的电特性。通过在将晶片W保持在主卡盘上的状态下以接触方式同时检查所有IC芯片的检查电极来进行检查。晶片检查装置设有接触器，该接触器由第一接触器，第二接触器和驱动机构构成。第一接触器在其下表面上具有大量接触突起，并且在其整个上表面上具有大量的接触电极。接触突起与检查电极同时接触。接触电极分别与接触突起电连接。第二接触器具有与第一接触器的接触电极接触的多个接触元件，例如弹簧销。第二接触器是可移动的，并且驱动机构使得第二接触器在X方向和Y方向上移动，使得接触元件和接触电极相互接触。接触器也可以包括第三接触器。第三接触器布置在第一接触器和晶片W之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式