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11. 发明申请

US20110300659A1 METHOD FOR FABRICATING MEMS DEVICE 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US20110300659A1
公开(公告)日：2011-12-08
申请号：US13209461
申请日：2011-08-15
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/311
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： Method for fabricating MEMS device has a first surface and a second surface and having a MEMS region and an IC region. A MEMS structure is formed over the first surface. A structural dielectric layer is formed over the first surface. The structural dielectric layer has a dielectric member and the spaces surrounding the MEMS structure is filled with the dielectric member. The substrate is patterned by etching process from the second surface of the substrate to expose a portion of the dielectric member filled in the space surrounding the MEMS structure. A wettable thin layer is formed to cover an exposed portion of the substrate at the second surface. An etching process is performed on the dielectric member filled in the spaces surrounding the MEMS structure. The MEMS structure is exposed and released by the etching process. The etching process comprises an isotropic etching process with a wet etchant.
摘要翻译：制造MEMS器件的方法具有第一表面和第二表面，并且具有MEMS区域和IC区域。在第一表面上形成MEMS结构。在第一表面上形成结构介电层。结构介电层具有电介质构件，并且围绕MEMS结构的空间填充有电介质构件。通过从衬底的第二表面的蚀刻工艺对衬底进行构图，以暴露在围绕MEMS结构的空间中填充的电介质构件的一部分。形成可湿性薄层以覆盖第二表面处的基板的暴露部分。对填充在围绕MEMS结构的空间的电介质构件进行蚀刻处理。通过蚀刻工艺暴露和释放MEMS结构。蚀刻工艺包括具有湿蚀刻剂的各向同性蚀刻工艺。

12. 发明申请

US20080032470A1 METHOD FOR FABRICATING NON-VOLATILE MEMORY 审中-公开
标题翻译：制造非易失性存储器的方法
公开(公告)号：US20080032470A1
公开(公告)日：2008-02-07
申请号：US11462372
申请日：2006-08-04
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L21/8244
CPC分类号： H01L27/11568 , H01L27/0207 , H01L27/115
摘要： A method for fabricating non-volatile memory on a substrate includes forming a plurality of doped lines in the substrate along a first direction, wherein the doped lines serve as a plurality of bit lines, and portions of each of the doped lines serves as source/drain regions for a plurality of memory cells. A charge storage stacked layer is formed over the substrate, wherein the charge storage stacked layer includes a charge trapping layer. A conductive layer is formed over the charge storage layer. The conductive layer and the charge storage stacked layer are patterned to form a plurality of word lines along a second direction, intersecting with the first directing. The remaining portion of the charge trapping layer is just under the word lines, not covering the isolation region between the word lines.
摘要翻译：用于在衬底上制造非易失性存储器的方法包括沿着第一方向在衬底中形成多个掺杂线，其中掺杂线用作多个位线，并且每个掺杂线的部分用作源极/ 漏极区域用于多个存储单元。电荷存储堆叠层形成在衬底上，其中电荷存储层叠层包括电荷俘获层。在电荷存储层上形成导电层。图案化导电层和电荷存储堆叠层，以沿与第一定向相交的第二方向形成多个字线。电荷俘获层的剩余部分刚好在字线之下，不覆盖字线之间的隔离区域。

13. 发明授权

US08502329B2 Micro-electro-mechanical systems (MEMS) device and method for fabricating the same 有权
标题翻译：微机电系统（MEMS）装置及其制造方法
公开(公告)号：US08502329B2
公开(公告)日：2013-08-06
申请号：US13224297
申请日：2011-09-01
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L29/84
CPC分类号： B81C1/00698 , B81C1/00682 , H01G5/18 , H04R19/005 , H04R19/04
摘要： A MEMS device includes a substrate. The substrate has a plurality of through holes in the substrate within a diaphragm region and optionally an indent space from the second surface at the diaphragm region. A first dielectric structural layer is then disposed over the substrate from the first surface, wherein the first dielectric structural layer has a plurality of openings corresponding to the through holes, wherein each of the through holes remains exposed by the first dielectric structural layer. A second dielectric structural layer with a chamber is disposed over the first dielectric structural layer, wherein the chamber exposes the openings of the first dielectric structural layer and the through holes of the substrate to connect to the indent space. A MEMS diaphragm is embedded in the second dielectric structural layer above the chamber, wherein an air gap is formed between the substrate and the MEMS diaphragm.
摘要翻译： MEMS器件包括衬底。衬底在膜片区域内的衬底中具有多个通孔，并且可选地在隔膜区域处具有与第二表面相邻的凹陷空间。然后，第一介电结构层从第一表面设置在衬底上，其中第一介电结构层具有对应于通孔的多个开口，其中每个通孔保持被第一介电结构层暴露。具有腔室的第二电介质结构层设置在第一介电结构层上，其中腔室暴露第一介电结构层的开口和衬底的通孔以连接到凹陷空间。 MEMS隔膜嵌入在腔室上方的第二电介质结构层中，其中在衬底和MEMS隔膜之间形成气隙。

14. 发明申请

US20110183456A1 METHOD FOR FABRICATING MEMS DEVICE 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US20110183456A1
公开(公告)日：2011-07-28
申请号：US12691754
申请日：2010-01-22
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/302
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
摘要翻译：一种制造MEMS器件的方法包括：提供具有第一表面和第二表面并具有MEMS区域和IC区域的单晶衬底; 在MEMS区域的第一表面上形成SCS质量块; 在所述基板的所述第一表面上形成结构介电层，其中所述结构介电层的电介质部件填充在所述MEMS区域中围绕所述SCS质量块的空间中，所述IC区域具有形成在所述MEMS区域中的互连结构的电路结构结构介电层; 通过在第二表面上的蚀刻工艺对单晶衬底进行图案化，以暴露填充在围绕SCS质量块的空间中的电介质构件的一部分; 至少在填充在SCS质量块周围的空间中的电介质部分上进行各向同性蚀刻处理。暴露SCS质量块以释放MEMS结构。

15. 发明申请

US20110156106A1 HERMETIC MEMS DEVICE AND METHOD FOR FABRICATING HERMETIC MEMS DEVICE AND PACKAGE STRUCTURE OF MEMS DEVICE 有权
标题翻译：用于制造MEMS器件的HERMETIC MEMS器件和方法以及MEMS器件的封装结构
公开(公告)号：US20110156106A1
公开(公告)日：2011-06-30
申请号：US12647559
申请日：2009-12-28
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L29/84 , H01L27/092 , H01L23/00
CPC分类号： B81C1/00246 , B81B7/0064 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81C2203/0714 , H01L2224/48091 , H01L2224/48247 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.
摘要翻译：密封微机电系统（MEMS）封装包括CMOS MEMS芯片和第二基板。 CMOS MEMS芯片具有第一衬底，结构介电层，CMOS电路和MEMS结构。结构介电层设置在第一结构基板的第一侧上。结构介电层具有用于电互连的互连结构，并且还具有保护结构层。第一结构基底具有至少一个孔。该孔位于保护结构层之下，以形成至少一个腔室。该室暴露于第一结构基板的第二侧的环境。该腔室还包括MEMS结构。第二衬底在室上粘附到第一衬底的第二侧以形成密封空间，并且MEMS结构在空间内。

16. 发明授权

US08464589B2 Micro-electromechanical systems (MEMS) structure 有权
标题翻译：微机电系统（MEMS）结构
公开(公告)号：US08464589B2
公开(公告)日：2013-06-18
申请号：US12904169
申请日：2010-10-14
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Li-Chi Tsao , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Li-Chi Tsao , Jhyy-Cheng Liou
IPC分类号： G01L7/08
CPC分类号： B81B3/0072 , B81B2201/0257 , H04R19/005
摘要： A MEMS structure includes a substrate, a structural dielectric layer, and a diaphragm. A structural dielectric layer is disposed over the substrate. The diaphragm is held by the structural dielectric layer at a peripheral end. The diaphragm includes multiple trench/ridge rings at a peripheral region surrounding a central region of the diaphragm. A corrugated structure is located at the central region of the diaphragm, surrounded by the trench/indent rings.
摘要翻译： MEMS结构包括基板，结构介电层和隔膜。结构介电层设置在衬底上。隔膜由外周端的结构介电层保持。隔膜包括围绕隔膜的中心区域的周边区域的多个沟槽/脊环。波纹结构位于隔膜的中心区域，被沟槽/压痕环包围。

17. 发明申请

US20120090398A1 MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) STRUCTURE 有权
标题翻译：微电子系统（MEMS）结构
公开(公告)号：US20120090398A1
公开(公告)日：2012-04-19
申请号：US12904169
申请日：2010-10-14
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Li-Chi Tsao , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Li-Chi Tsao , Jhyy-Cheng Liou
IPC分类号： G01L7/08
CPC分类号： B81B3/0072 , B81B2201/0257 , H04R19/005
摘要： A MEMS structure includes a substrate, a structural dielectric layer, and a diaphragm. A structural dielectric layer is disposed over the substrate. The diaphragm is held by the structural dielectric layer at a peripheral end. The diaphragm includes multiple trench/ridge rings at a peripheral region surrounding a central region of the diaphragm. A corrugated structure is located at the central region of the diaphragm, surrounded by the trench/indent rings.
摘要翻译： MEMS结构包括基板，结构介电层和隔膜。结构介电层设置在衬底上。隔膜由外周端的结构介电层保持。隔膜包括围绕隔膜的中心区域的周边区域的多个沟槽/脊环。波纹结构位于隔膜的中心区域，被沟槽/压痕环包围。

18. 发明授权

US08217474B2 Hermetic MEMS device and method for fabricating hermetic MEMS device and package structure of MEMS device 有权
标题翻译：用于制造MEMS器件的密封MEMS器件和封装结构的密封MEMS器件和方法
公开(公告)号：US08217474B2
公开(公告)日：2012-07-10
申请号：US12647559
申请日：2009-12-28
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Jhyy-Cheng Liou
IPC分类号： H01L27/14
CPC分类号： B81C1/00246 , B81B7/0064 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81C2203/0714 , H01L2224/48091 , H01L2224/48247 , H01L2924/1461 , H01L2924/00014 , H01L2924/00
摘要： A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.
摘要翻译：密封微机电系统（MEMS）封装包括CMOS MEMS芯片和第二基板。 CMOS MEMS芯片具有第一衬底，结构介电层，CMOS电路和MEMS结构。结构介电层设置在第一结构基板的第一侧上。结构介电层具有用于电互连的互连结构，并且还具有保护结构层。第一结构基底具有至少一个孔。该孔位于保护结构层之下，以形成至少一个腔室。该室暴露于第一结构基板的第二侧的环境。该腔室还包括MEMS结构。第二衬底在室上粘附到第一衬底的第二侧以形成密封空间，并且MEMS结构在空间内。

19. 发明授权

US08030112B2 Method for fabricating MEMS device 有权
标题翻译：制造MEMS器件的方法
公开(公告)号：US08030112B2
公开(公告)日：2011-10-04
申请号：US12691754
申请日：2010-01-22
申请人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
发明人： Tsung-Min Hsieh , Chien-Hsing Lee , Jhyy-Cheng Liou
IPC分类号： H01L21/00
CPC分类号： B81C1/00246 , B81B2203/0315 , B81B2207/015 , B81C2201/016 , B81C2203/0714 , H04R19/005 , H04R19/04 , H04R31/00
摘要： A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.
摘要翻译：一种制造MEMS器件的方法包括：提供具有第一表面和第二表面并具有MEMS区域和IC区域的单晶衬底; 在MEMS区域的第一表面上形成SCS质量块; 在所述基板的所述第一表面上形成结构介电层，其中所述结构介电层的电介质部件填充在所述MEMS区域中围绕所述SCS质量块的空间中，所述IC区域具有形成在所述MEMS区域中的互连结构的电路结构结构介电层; 通过在第二表面上的蚀刻工艺对单晶衬底进行图案化，以暴露填充在围绕SCS质量块的空间中的电介质构件的一部分; 至少在填充在SCS质量块周围的空间中的电介质部分上进行各向同性蚀刻处理。暴露SCS质量块以释放MEMS结构。

20. 发明申请

US20100052082A1 MICRO-ELECTRO-MECHANICAL SYSTEMS (MEMS) PACKAGE AND METHOD FOR FORMING THE MEMS PACKAGE 有权
标题翻译：微电子机械系统（MEMS）封装和形成MEMS封装的方法
公开(公告)号：US20100052082A1
公开(公告)日：2010-03-04
申请号：US12203151
申请日：2008-09-03
申请人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
发明人： Chien-Hsing Lee , Tsung-Min Hsieh , Chih-Hsiang Lin
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： B81B7/0061 , B81B2201/0257 , B81B2207/095 , B81B2207/096 , H01L2224/48091 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： A micro-electro-mechanical systems (MEMS) package includes a MEMS microphone device. The MEMS microphone device has a first substrate and at least a sensing element on the first substrate wherein a first chamber in the MEMS microphone device is connected to the sensing element. A second substrate is disposed over the MEMS microphone device to provide a second chamber in the second substrate over the sensing element opposite to the first chamber.
摘要翻译：微电子机械系统（MEMS）封装包括MEMS麦克风装置。 MEMS麦克风装置具有第一基板和第一基板上的至少一个感测元件，其中MEMS麦克风装置中的第一腔室连接到感测元件。第二基板设置在MEMS麦克风装置上方，以在与第一室相对的感测元件上的第二基板中提供第二室。

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