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    • 20. 发明授权
    • Photo mask
    • 照片面具
    • US07005216B2
    • 2006-02-28
    • US10299692
    • 2002-11-20
    • Hiroshi ShiraishiSonoko MigitakaTakashi HattoriTadashi AraiToshio Sakamizu
    • Hiroshi ShiraishiSonoko MigitakaTakashi HattoriTadashi AraiToshio Sakamizu
    • G03F9/00
    • G03F1/56
    • Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
    • 提供KrF准分子激光光刻的光掩模,可以在较小数量的步骤中以高精度和低缺陷生产。 根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光(波长:约248nm)的抗蚀剂图案18的光掩模。 抗蚀剂图案18包括:具有高遮光性的碱性水溶性树脂,其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。