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1. 发明授权

US6009782A Table saw 失效
标题翻译：桌锯
公开(公告)号：US6009782A
公开(公告)日：2000-01-04
申请号：US99150
申请日：1998-06-18
申请人： Nobuo Tajima , Katsuji Haneda , Seiichi Mineda
发明人： Nobuo Tajima , Katsuji Haneda , Seiichi Mineda
IPC分类号： B27G3/00 , B23D59/00 , B23Q11/00 , B27B5/29 , B26D7/18
CPC分类号： B23D59/006 , B23Q11/005 , Y02P70/171 , Y10T83/2068 , Y10T83/7697 , Y10T83/773
摘要： A table saw has a motor driven rotary blade disposed in a blade case and vertically adjustable with respect thereto. During cutting, wood chips are expelled from the blade case even when the rotary blade is vertically disposed away from a bottom of the blade case. An air current, provided by a fan driven by the motor, is blown from a motor gear housing and guided to the blade case via a plurality of guide members. The air current subsequently blows along an inner surface of the blade case in order to blow the wood chips out a chip discharge port.
摘要翻译：台锯具有设置在叶片壳体中并相对于其垂直调节的马达驱动的旋转叶片。在切割期间，即使当旋转刀片垂直地布置成远离刀片壳体的底部时，木片也从刀片壳体排出。由马达驱动的风扇提供的气流从马达齿轮箱吹出，并通过多个引导构件被引导到叶片壳体。气流随后沿刀片壳体的内表面吹动，以便将木屑从芯片排出口吹出。

2. 发明授权

US4994326A Solder powders coated with fluorine compounds, and solder pastes 失效
标题翻译：涂有氟化合物的焊料粉末和焊膏
公开(公告)号：US4994326A
公开(公告)日：1991-02-19
申请号：US263551
申请日：1988-10-27
申请人： Takashi Shimmura , Yoshihiro Miyano , Nobuo Tajima , Makoto Inoue
发明人： Takashi Shimmura , Yoshihiro Miyano , Nobuo Tajima , Makoto Inoue
IPC分类号： B23K35/22 , B23K35/02 , B23K35/14 , B23K35/36 , H05K3/34
CPC分类号： B23K35/36 , B23K35/0244 , B23K35/025 , H05K3/3484 , H05K2203/0591 , H05K3/3463 , Y10T428/2995 , Y10T428/2998 , Y10T428/31688
摘要： A solder powder is coated with an agent that protects the powder from oxidation. The coating agent is substantially insoluble in a vehicle used to make solder pastes. Thus, pastes made with the coated powders also resist oxidation even when exposed to air. A method for making the coated solder powders is also disclosed and claimed.
摘要翻译：焊剂粉末涂覆有保护粉末免于氧化的试剂。涂料剂基本上不溶于用于制造焊膏的载体。因此，涂覆粉末制成的糊剂即使暴露在空气中也能抵抗氧化。还公开并要求保护涂覆的焊料粉末的方法。

3. 发明授权

US08497391B2 Insulating film material, method of film formation using insulating film material, and insulating film 有权
标题翻译：绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜
公开(公告)号：US08497391B2
公开(公告)日：2013-07-30
申请号：US12864127
申请日：2009-01-20
申请人： Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
发明人： Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
IPC分类号： C23C16/00 , C07F7/08 , H01L21/31
CPC分类号： C07F7/0807 , C23C16/30 , H01L21/02167 , H01L21/02208 , H01L21/02274 , H01L21/3148 , H01L21/76829
摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.
摘要翻译：由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

4. 发明申请

US20110130584A1 INSULATING FILM MATERIAL, METHOD OF FILM FORMATION USING INSULATING FILM MATERIAL, AND INSULATING FILM 有权
标题翻译：绝缘膜材料，使用绝缘膜材料的膜形成方法和绝缘膜
公开(公告)号：US20110130584A1
公开(公告)日：2011-06-02
申请号：US12864127
申请日：2009-01-20
申请人： Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
发明人： Takahisa Ohno , Nobuo Tajima , Satoshi Hasaka , Minoru Inoue , Kaoru Sakoda , Yoshiaki Inaishi , Manabu Shinriki , Kazuhiro Miyazawa
IPC分类号： C23C16/00 , C07F7/08
CPC分类号： C07F7/0807 , C23C16/30 , H01L21/02167 , H01L21/02208 , H01L21/02274 , H01L21/3148 , H01L21/76829
摘要： An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.
摘要翻译：由下述化学式（1）表示的用于等离子体CVD的绝缘膜材料，使用绝缘膜材料的成膜方法和绝缘膜。根据本发明，可以获得具有适合于半导体器件的层间绝缘膜等的低介电常数和优异的铜扩散阻挡性的绝缘膜。在化学式（1）中，n表示3〜6的整数，R1和R2各自独立地表示C2H，C2H3，C3H3，C3H5，C3H7，C4H5，C4H7，C4H9，C5H7，C5H9和C5H11中的任一种。

5. 发明申请

US20140341800A1 METHOD FOR PRODUCING AQUEOUS HYDROGEN PEROXIDE SOLUTION 审中-公开
标题翻译：生产过氧化氢水溶液的方法
公开(公告)号：US20140341800A1
公开(公告)日：2014-11-20
申请号：US14344542
申请日：2012-07-12
申请人： Nobuo Tajima , Yoshihisa Arai
发明人： Nobuo Tajima , Yoshihisa Arai
IPC分类号： C01B15/013
CPC分类号： C01B15/0135 , C01B15/013
摘要： An object is to provide a method for producing an aqueous hydrogen peroxide solution, which can effectively remove an impurity, such as silicic acid or a silicate, contained in an aqueous hydrogen peroxide solution. The method of the present invention for producing an aqueous hydrogen peroxide solution has a first step for contacting an aqueous hydrogen peroxide solution with activated alumina which has been cleaned with purified water, and a second step for, after the first step, contacting the resultant aqueous hydrogen peroxide solution with a cation-exchange resin. The cation-exchange resin is preferably a hydrogen ion-type, strongly acid cation-exchange resin having a sulfonic acid group. The aqueous hydrogen peroxide solution being in contact with the activated alumina and the cation-exchange resin preferably has a temperature of 30° C. or lower.
摘要翻译：目的是提供一种生产过氧化氢水溶液的方法，其可以有效地除去过氧化氢水溶液中所含的杂质如硅酸或硅酸盐。本发明的用于生产过氧化氢水溶液的方法具有使过氧化氢水溶液与用净化水清洗的活性氧化铝接触的第一步骤，第二步是在第一步骤之后，使所得水溶液过氧化氢溶液与阳离子交换树脂。阳离子交换树脂优选为具有磺酸基的氢离子型强酸阳离子交换树脂。与活性氧化铝和阳离子交换树脂接触的过氧化氢水溶液的温度优选为30℃以下。

6. 发明申请

US20100112361A1 Method of removing lead, reclaimed metals and reclaimed products 审中-公开
标题翻译：去除铅，回收金属和回收产品的方法
公开(公告)号：US20100112361A1
公开(公告)日：2010-05-06
申请号：US12588876
申请日：2009-10-30
申请人： Satoru Kurita , Taiichi Ohno , Nobuo Tajima
发明人： Satoru Kurita , Taiichi Ohno , Nobuo Tajima
IPC分类号： B32B15/04 , C22B9/00 , B32B15/01
CPC分类号： C22B13/025 , C22B7/002 , C22B9/05 , C22B13/06 , C22B25/08 , Y02P10/214 , Y10T428/31678
摘要： An object of the present invention is to provide an industrially excellent method for removing lead that is high in removal effect of lead, capable of implementing the removal even in small facilities and of suppressing capital investment cost. A material to be treated selected from the group consisting of a pure metal and an alloy is heated to obtain a melt. The melt is contacted with at least one of a metal halide and a metal oxyhalide to remove lead in the material to be treated.
摘要翻译：本发明的目的是提供一种工业上优异的去除铅的去除效果好的铅的优良方法，即使在小型设施中也能够实现除去，并且抑制了资本投入成本。将从纯金属和合金组成的组中选择的待处理材料加热以获得熔体。熔体与金属卤化物和金属卤氧化物中的至少一种接触以除去待处理材料中的铅。

7. 发明申请

US20110313184A1 INSULATING FILM MATERIAL, AND FILM FORMATION METHOD UTILIZING THE MATERIAL, AND INSULATING FILM 审中-公开
标题翻译：绝缘膜材料，薄膜形成方法利用材料和绝缘膜
公开(公告)号：US20110313184A1
公开(公告)日：2011-12-22
申请号：US13147719
申请日：2010-02-05
申请人： Nobuo Tajima , Shuji Nagano , Yoshiaki Inaishi , Hideharu Shimizu , Yoshi Ohashi , Takeshi Kada , Shigeki Matsumoto , Yong hua Xu
发明人： Nobuo Tajima , Shuji Nagano , Yoshiaki Inaishi , Hideharu Shimizu , Yoshi Ohashi , Takeshi Kada , Shigeki Matsumoto , Yong hua Xu
IPC分类号： C07F7/08 , C23C16/30 , C23C16/56 , C07F7/18
CPC分类号： H01L21/76801 , C23C16/30 , C23C16/5096 , H01L21/02123 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/3148 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： An insulating film material for plasma CVD of the present invention is constituted of a silicon compound including two hydrocarbon groups bonded to each other to form a ring structure together with a silicon atom, or at least one branched hydrocarbon group, wherein within the branched hydrocarbon group, α-carbon that is a carbon atom bonded to the silicon atom constitutes a methylene group, and β-carbon that is a carbon atom bonded to the methylene group or γ-carbon that is a carbon atom bonded to the β-carbon is a branching point.
摘要翻译：本发明的等离子体CVD用绝缘膜材料由包含两个彼此键合的烃基的硅化合物构成，与硅原子或至少一个支链烃基一起形成环状结构，其中在支链烃基，与硅原子键合的碳原子的α-碳构成亚甲基，作为与亚甲基键合的碳原子的碳原子或与碳原子结合的碳原子的γ-碳是一个分支点。

8. 发明授权

US4958057A Transfer-type plasma torch with ring-shaped cathode and with processing gas passage provide interiorly of the cathode 失效
标题翻译：具有环形阴极和处理气体通道的转移式等离子体焰炬内部提供阴极
公开(公告)号：US4958057A
公开(公告)日：1990-09-18
申请号：US340188
申请日：1989-04-19
申请人： Hiroshi Shiraishi , Nobuo Tajima , Tsuyoshi Shinoda , Nobuyoshi Hirotsu
发明人： Hiroshi Shiraishi , Nobuo Tajima , Tsuyoshi Shinoda , Nobuyoshi Hirotsu
IPC分类号： H05H1/32 , B22D11/10 , H05H1/28 , H05H1/34
CPC分类号： H05H1/34 , H05H1/28 , H05H2001/3421 , H05H2001/3436 , H05H2001/3478
摘要： A transfer-type plasma torch may be used to heat objects, for example, to heat molten steel at a certain stage of being supplied from a converter to a continuous casting mold. After a trigger electric discharge has been produced between the cathode and the ignition anode of the plasma torch, an electric discharge is effected between the cathode and an object to be treated that is set as the anode. The plasma torch includes a cylindrical cathode-holding member having therein a space allowing for the flow of coolant, an ignition anode disposed within the cathode-holding member, and a ring-shaped cathode disposed on an inner periphery of the cathode-holding member and positioned below the tip of the ignition anode, with the tip portion of the cathode projecting downwardly from the bottom face of the cathode-holding member. This arrangement eliminates a conventional nozzle, thereby allowing for a reduction in a diameter of the entire torch while enabling a relative increase in the diameter of the cathode. Thus, the plasma torch exhibits a large capacity for arc current.

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