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11. 发明申请

US20070262239A1 Photodetector 有权
标题翻译：光电检测器
公开(公告)号：US20070262239A1
公开(公告)日：2007-11-15
申请号：US11798040
申请日：2007-05-09
申请人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
发明人： Minoru Niigaki , Toru Hirohata , Hiroyasu Fujiwara , Akira Higuchi
IPC分类号： H01L27/00
CPC分类号： H01L31/02162
摘要： When light is made incident into antenna layers 11a, 11b, and 11c of a photodetector 1, specific wavelength components of light contained in the incident light combine with surface plasmons of the antenna layers 11a, 11b, and 11c, and surface plasmon resonance occurs. Thereby, near-field lights are outputted from through-holes 13 of the antenna layers 11a, 11b, and 11c. The near-field light outputted from each through-hole 13 reaches a light absorbing layer 4 via light receiving surfaces 4a, 4b, and 4c. The light absorbing layer 4 generates a charge of an amount according to the amount of received light. Since cycle intervals Λa, Λb, and Λc of convex portions 12 in the antenna layers 11a, 11b, and 11c are different from each other, the wavelength component of light that combines with a surface plasmon differs in each of the antenna layers 11a, 11b, and 11c. Consequently, a plurality of wavelength components of light can be detected.
摘要翻译：当光入射到光电检测器1的天线层11a，11b和11c中时，入射光中包含的光的特定波长成分与天线层11a，11b和11c的表面等离子体相结合，并发生表面等离子体共振。从而，从天线层11a，11b和11c的通孔13输出近场光。从每个通孔13输出的近场光通过光接收表面4a，4b和4c到达光吸收层4。光吸收层4产生与接收光量相关的量的电荷。由于天线层11a，11b和11c中的凸部12的周期间隔Lambda，Lambdab和Lambdac彼此不同，所以与各表面等离子体的组合的光的波长分量在每个天线层中不同 11 a，11 b，11 c。因此，可以检测多个波长分量的光。

12. 发明授权

US5591986A Photoemitter electron tube and photodetector 失效
标题翻译： Photoemitter电子管和光电探测器
公开(公告)号：US5591986A
公开(公告)日：1997-01-07
申请号：US299664
申请日：1994-09-02
申请人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
IPC分类号： H01J1/34 , H01L27/14 , H01J31/00 , H01L29/49
CPC分类号： H01J1/34 , H01J2201/3423
摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
摘要翻译：本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成由形成在引线电极和一个表面之间的电场发射预定的极性电压。

13. 发明授权

US5471051A Photocathode capable of detecting position of incident light in one or two dimensions, phototube, and photodetecting apparatus containing same 失效
标题翻译：能够检测一维或二维入射光的位置的光电阴极，光电管和含有它的光电检测装置
公开(公告)号：US5471051A
公开(公告)日：1995-11-28
申请号：US251928
申请日：1994-06-01
申请人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
发明人： Minoru Niigaki , Katsuyuki Kinoshita , Toru Hirohata , Tuneo Ihara , Masami Yamada , Norio Asakura , Yasuharu Negi , Tomoko Suzuki
IPC分类号： H01J1/34 , H01J43/04 , H01J40/14
CPC分类号： H01J1/34 , H01J43/045
摘要： There is disclosed a photocathode comprising:a photoelectric conversion layer for internally exciting photoelectrons in response to incident photons; a semiconductor layer having a photoelectron emission surface for emitting the photoelectrons generated and accelerated in the photoelectric conversion layer from the photoelectron emission surface; an upper surface electrode formed on the photoelectron emission surface of the semiconductor layer; and a lower surface electrode formed on the semiconductor layer so that the lower surface electrode is opposite to the upper surface electrode through the semiconductor layer, the upper surface electrode being divided so as to provide a plurality of pixel electrodes which are electrically insulated from each other, the plurality of pixel electrodes being respectively connected to a plurarity of bias application wires.
摘要翻译：公开了一种光电阴极，包括：用于响应于入射光子而内部激发光电子的光电转换层; 具有光电子发射表面的半导体层，用于发射从光电子发射表面在光电转换层中产生和加速的光电子; 形成在所述半导体层的光电子发射表面上的上表面电极; 以及形成在半导体层上的下表面电极，使得下表面电极通过半导体层与上表面电极相对，上表面电极被分割以提供彼此电绝缘的多个像素电极多个像素电极分别连接到多个偏置施加电线。

14. 发明申请

US20090032797A1 PHOTOCATHODE 有权
标题翻译：光刻胶
公开(公告)号：US20090032797A1
公开(公告)日：2009-02-05
申请号：US12177914
申请日：2008-07-23
申请人： Toru Hirohata , Minoru Niigaki
发明人： Toru Hirohata , Minoru Niigaki
IPC分类号： H01L29/06
CPC分类号： H01J1/34 , H01J40/06
摘要： When to-be-detected light is made incident from a support substrate 2 side of a photocathode E1, a light absorbing layer 3 absorbs this to-be-detected light and produces photoelectrons. However, depending on the thickness and the like of the light absorbing layer 3, the to-be-detected light can be transmitted through the light absorbing layer 3 without being sufficiently absorbed by the light absorbing layer 3. The to-be-detected light transmitted through the light absorbing layer 3 reaches an electron emitting layer 4. A part of the to-be-detected light that has reached the electron emitting layer 4 proceeds toward a through-hole 5a of a contact layer 5. Since the length d1 of a diagonal line of the through-hole 5a is shorter than the wavelength of the to-be-detected light, the to-be-detected light can be suppressed from passing through the through-hole 5a and being emitted to the exterior. The to-be-detected light suppressed from being externally emitted is reflected on the exposed surface of the electron emitting layer 4 and is again made incident into the light absorbing layer 3 to be absorbed. Thereby, a photocathode excellent in light detection sensitivity is realized.
摘要翻译：当从光电阴极E1的支撑基板2侧入射待检测的光时，光吸收层3吸收该被检测光并产生光电子。然而，根据光吸收层3的厚度等，待检测光可以透过光吸收层3而不被光吸收层3充分吸收。待检测的光通过光吸收层3透射的光到达电子发射层4.到达电子发射层4的被检测光的一部分朝向接触层5的通孔5a前进。由于长度d1 通孔5a的对角线比待检测光的波长短，可以抑制被检测光穿过通孔5a并被发射到外部。被外部发射抑制的被检测光被反射在电子发射层4的暴露表面上，并再次入射到光吸收层3中以被吸收。由此，实现了光检测灵敏度优异的光电阴极。

15. 发明授权

US07002132B2 Photocathode, electron tube, and method of assembling photocathode 有权
标题翻译：光电阴极，电子管和组装光电阴极的方法
公开(公告)号：US07002132B2
公开(公告)日：2006-02-21
申请号：US10704695
申请日：2003-11-12
申请人： Yasuharu Negi , Yasuyuki Egawa , Toru Hirohata , Minoru Niigaki
发明人： Yasuharu Negi , Yasuyuki Egawa , Toru Hirohata , Minoru Niigaki
IPC分类号： H01J40/14
CPC分类号： H01J43/28 , H01J43/08
摘要： The invention relates to a photocathode and the like having such structure for holding a photocathode plate on a light transparent member with good reliability and workability. In the photocathode, claw portions of a holding member fixed to the light transparent member is pressed against the lower surface of a supporting plate so that a photocathode plate is sandwiched between the light transparent member and the supporting plate. Thus, the supporting plate is pressed against the photocathode plate, so that the photocathode plate is pressed against the light transparent plate by the supporting plate. This allows the photocathode plate to be held reliably by the light transparent member. This simple configuration further provides good workability in assembling.
摘要翻译：本发明涉及一种具有这样的结构的光电阴极等，该光电阴极等具有良好的可靠性和可加工性的将光电面板保持在透光构件上。在光电阴极中，固定在透光构件上的保持构件的爪部被压靠在支撑板的下表面上，使得光电阴极板夹在透光构件和支撑板之间。因此，支撑板被压在光电阴极板上，使得光电阴极板通过支撑板压靠在透光板上。这允许光电阴极板被透光构件可靠地保持。这种简单的配置进一步提供了良好的组装可操作性。

16. 发明授权

US5747826A Photoemitter electron tube, and photodetector 失效
标题翻译： Photoemitter电子管和光电检测器
公开(公告)号：US5747826A
公开(公告)日：1998-05-05
申请号：US671195
申请日：1996-06-27
申请人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tuneo Ihara , Masami Yamada
IPC分类号： H01J1/34 , H01L29/47
CPC分类号： H01J1/34 , H01J2201/3423
摘要： The present invention provides a photoemission device excellent in quantum efficiency of photoelectric conversion, a high-sensitive electron tube employing it, and a high-sensitive photodetecting apparatus. A photoemission device of the present invention is arranged to have a photon absorbing layer for absorbing incident photons to excite photoelectrons, an insulator layer layered on one surface of the photon absorbing layer, a lead electrode layered on the insulator layer, and a contact formed on the other surface of the photon absorbing layer to apply a predetermined polarity voltage between the lead electrode and the other surface of the photon absorbing layer, whereby the photoelectrons excited by the incident photons entering the photon absorbing layer and moving toward the one side are made to be emitted by an electric field formed between the lead electrode and the one surface by the predetermined polarity voltage.
摘要翻译：本发明提供了一种光电转换量子效率优异的使用它的高灵敏度电子管和高灵敏度光电检测装置的光电发射装置。本发明的发光装置被配置为具有用于吸收入射光子以激发光电子的光子吸收层，层叠在光子吸收层的一个表面上的绝缘体层，层叠在绝缘体层上的引线电极和形成在光子吸收层的另一个表面，以在引线电极和光子吸收层的另一个表面之间施加预定的极性电压，由此进入光子吸收层并朝向一侧移动的入射光子激发的光电子被制成由形成在引线电极和一个表面之间的电场发射预定的极性电压。

17. 发明授权

US5680007A Photomultiplier having a photocathode comprised of a compound semiconductor material 失效
标题翻译：具有由化合物半导体材料构成的光电阴极的光电倍增管
公开(公告)号：US5680007A
公开(公告)日：1997-10-21
申请号：US507985
申请日：1995-07-27
申请人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
发明人： Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
IPC分类号： H01J1/34 , H01J43/08
CPC分类号： H01J1/34 , H01J43/08 , H01J2201/3423
摘要： A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
摘要翻译：提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。通过电池在上表面电极和下表面电极之间施加预定的电压。在施加该电压时，形成在接触层和电子发射层之间的p-n结被反向偏置。耗尽层从p-n结延伸到光电发射表面，并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。当入射光吸收在光吸收层中以激发光电子时，光电子通过电场被加速到发射表面。光电子在该电场加速度下获得能量，并且在电子发射层中被转变到更高能量级的导带，并且发射到真空中。

18. 发明授权

US6002141A Method of using photocathode and method of using electron tube 失效
标题翻译：使用光电阴极的方法和使用电子管的方法
公开(公告)号：US6002141A
公开(公告)日：1999-12-14
申请号：US562580
申请日：1995-11-24
申请人： Minoru Niigaki , Toru Hirohata , Masami Yamada , Katsuyuki Kinoshita
发明人： Minoru Niigaki , Toru Hirohata , Masami Yamada , Katsuyuki Kinoshita
IPC分类号： H01J1/34 , H01J29/38 , H01J31/50 , H01J40/06 , H01L29/06 , H01L29/12
CPC分类号： H01J1/34
摘要： The present invention is to provide a method of using a photocathode including a laminated heterostructure of Group III-V semiconductors, which is constituted by a p-type light-absorbing layer formed on a p-type substrate and a p-type electron-emitting layer formed on the light-absorbing layer, a first electrode formed to have a rectifying function with respect to the electron-emitting layer, and a second electrode formed in ohmic contact with the substrate, wherein a voltage necessary and sufficient to form a potential gradient throughout the light-absorbing layer is applied between the first electrode and the second electrode, thereby accelerating photoelectrons excited in the light-absorbing layer which absorbs external incident light on the basis of an electric field formed in the light-absorbing layer and the electron-emitting layer and emitting the photoelectrons from the electron-emitting layer. The accelerated electrons largely decrease differences in transit time until reaching the emission surface of the electron-emitting layer as compared to diffused electrons. Therefore, the response speed of the photocathode for detecting external incident light is increased.
摘要翻译：本发明提供一种使用包含III-V族半导体的层叠异质结构的光电阴极的方法，该方法由形成在p型衬底上的p型光吸收层和p型电子发射形成在光吸收层上的第一电极，形成为具有相对于电子发射层的整流功能的第一电极和与该衬底欧姆接触形成的第二电极，其中，形成电势梯度所必需的电压在整个光吸收层处施加在第一电极和第二电极之间，从而基于在光吸收层和电子发射层中形成的电场来加速吸收外部入射光的光吸收层中激发的光电子，并从电子发射层发射光电子。与扩散电子相比，加速电子大大地减小了传播时间的差异，直到达到电子发射层的发射表面。因此，用于检测外部入射光的光电阴极的响应速度增加。

19. 发明授权

US5138191A Photoemitter 失效
标题翻译：摄影师
公开(公告)号：US5138191A
公开(公告)日：1992-08-11
申请号：US546753
申请日：1990-07-02
申请人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
发明人： Yoshihiko Mizushima , Toru Hirohata , Tsuneo Ihara , Minoru Niigaki , Kenichi Sugimoto , Koichiro Oba , Toshihiro Suzuki , Tomoko Suzuki
IPC分类号： G01J1/02 , H01J1/30 , H01J1/308 , H01J1/34 , H01J29/38 , H01J29/45 , H04N5/33
CPC分类号： H01J1/308 , H01J1/34 , H01J2201/3423
摘要： A junction, such as a Schottky junction, is formed between a conductive electrode and a semiconductor. A bias voltage is applied between the conductive electrode and an outward-emission-side electrode formed on the semiconductor at the side opposite to the junction. Upon illumination, photoelectrons are internally emitted in the conductive electrode into the semiconductor, transported through the semiconductor, and emitted outward from the semiconductor surface, which has been so treated as to reduce the surface barrier height. The semiconductor is semi-insulating, or a p-n junction is formed therein.
摘要翻译：在导电电极和半导体之间形成诸如肖特基结的结。在导电电极与形成在半导体的与该结的相反侧的外侧发射侧电极之间施加偏置电压。在照射时，光电子在导电电极内部发射到半导体中，通过半导体传输，并从半导体表面向外发射，半导体表面已被如此处理以减小表面势垒高度。半导体是半绝缘的，或者在其中形成p-n结。

20. 发明申请

US20090273281A1 PHOTOCATHODE AND ELECTRON TUBE HAVING THE SAME 审中-公开
标题翻译：具有相同的光电管和电子管
公开(公告)号：US20090273281A1
公开(公告)日：2009-11-05
申请号：US12432850
申请日：2009-04-30
申请人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
发明人： Minoru Niigaki , Toru Hirohata , Harumasa Yoshida , Hirofumi Kan
IPC分类号： H01J40/06 , H01L29/12
CPC分类号： H01J31/50 , H01J1/34 , H01J40/06 , H01J2231/5001
摘要： The photocathode of the present invention is provided with a supporting substrate composed of a single-crystal compound semiconductor, a light absorbing layer which is formed on the supporting substrate and smaller in an energy band gap than the supporting substrate to absorb incident light transmitted through the supporting substrate, thereby generating photoelectrons, and a surface layer which is formed on the light absorbing layer to lower a work function of the light absorbing layer, in which the supporting substrate comprises Al(1−x)GaxN (0≦X
摘要翻译：本发明的光电阴极设置有由单晶化合物半导体构成的支撑基板，形成在支撑基板上的光吸收层，并且与支撑基板相比能量带隙更小，以吸收透过该基板的入射光支撑基板，从而产生光电子;以及表面层，其形成在光吸收层上以降低光吸收层的功函数，其中支撑衬底包括Al（1-x）GaxN（0≤x≤1 ），并且光吸收层包括由选自Al，Ga和In以及N中的至少一种材料构成的化合物半导体。

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