专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5105593A Weatherproof curtain wall unit 失效
标题翻译：天气防雨墙单元
公开(公告)号：US5105593A
公开(公告)日：1992-04-21
申请号：US690359
申请日：1991-04-24
申请人： Hiromitsu Kaminaga , Noriaki Okamoto , Yuichi Kano
发明人： Hiromitsu Kaminaga , Noriaki Okamoto , Yuichi Kano
IPC分类号： E04B1/684 , E04B2/88 , E04B2/90
CPC分类号： E04B2/90
摘要： A weatherproof curtain wall unit (U) comprises a rectangular frame (F) enclosing a panel (P) therein and a resilient weatherstrip (A) provided at least along a pair of vertical sides and an upper side of the rectangular frame (F). The resilient weatherstrip (A) is offset between the vertical sides and the upper side to prevent a gap from arising between the resilient weatherstrips (A, A) of the adjacent curtain wall units (U1, U2, U3).
摘要翻译：防风雨幕墙单元（U）包括在其中包围面板（P）的矩形框架（F）和至少沿着一对垂直侧面和矩形框架（F）的上侧设置的弹性密封条（A）。弹性密封条（A）在垂直侧面和上侧之间偏移，以防止在相邻的幕墙单元（U1，U2，U3）的弹性风挡条（A，A）之间产生间隙。

12. 发明申请

US20070152618A1 Angular velocity measuring device and leg-moving robot 失效
标题翻译：角速度测量装置和腿部移动机器人
公开(公告)号：US20070152618A1
公开(公告)日：2007-07-05
申请号：US10584049
申请日：2005-07-13
申请人： Kouji Saotome , Noriaki Okamoto , Shinyu Hirayama , Tomohiro Sakogoshi , Yoichi Shimada , Shigeto Akahori , Kengo Hori , Hitoshi Saika
发明人： Kouji Saotome , Noriaki Okamoto , Shinyu Hirayama , Tomohiro Sakogoshi , Yoichi Shimada , Shigeto Akahori , Kengo Hori , Hitoshi Saika
IPC分类号： B25J5/00
CPC分类号： G01C19/56 , B25J13/088 , G01P9/00
摘要： An angular velocity measuring device (1) includes a first sensor (2) (vibratory gyroscope) and a second sensor (3) (gas rate gyroscope). A detected output of the first sensor (2) is input to a highpass filter (4) and an output of this filter (4) is stored in the time series into a memory (10). Subtraction means (11) sequentially performs operations of subtracting an output ωv′(t−tsd) of the filter (4) at a time a predetermined time period tsd earlier from an output ωv′(t) of the filter (4), and addition means (12) sequentially adds the value obtained by the above to an output ωg(t) of the second sensor (3), whereby an angular velocity measurement is obtained. Thereby, it is possible to provide an angular velocity measuring device whose angular velocity measurements are high in response and stability at a low price.
摘要翻译：角速度测量装置（1）包括第一传感器（2）（振动陀螺仪）和第二传感器（3）（气体速率陀螺仪）。将第一传感器（2）的检测输出输入到高通滤波器（4），并将该滤波器（4）的输出以时间序列存储到存储器（10）中。减法装置（11）从滤波器（4）的输出ωgav'（t）提前一个预定时间段tsd顺序执行减去滤波器（4）的输出ωgav'（t-tsd）的操作，以及加法装置（12）将由上述获得的值顺序地与第二传感器（3）的输出omegag（t）相加，从而获得角速度测量。因此，可以提供一种角速度测量装置，其角速度测量响应高，稳定性低。

13. 发明授权

US06468845B1 Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor 失效
标题翻译：具有导电薄膜的半导体装置及其制造装置
公开(公告)号：US06468845B1
公开(公告)日：2002-10-22
申请号：US09536642
申请日：2000-03-28
申请人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
发明人： Takashi Nakajima , Hideo Miura , Hiroyuki Ohta , Noriaki Okamoto
IPC分类号： H01L2184
CPC分类号： H01L21/28097 , H01L21/28035 , H01L21/28518 , H01L21/28525 , H01L21/32053 , H01L21/76838 , H01L21/76877 , H01L21/823437 , H01L23/485 , H01L23/53257 , H01L23/53271 , H01L28/40 , H01L29/4925 , H01L29/4975 , H01L2924/0002 , Y10T117/10 , Y10T117/1004 , H01L2924/00
摘要： In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
摘要翻译：例如，通过氧化硅膜5在半导体衬底4上的氧化硅膜5上形成电极2时，栅电极2被构成为多个多晶硅层6的层叠结构。栅极部分通过制造具有沉积非晶层的工艺的薄膜的方法和使该非晶材料结晶（再结晶）的方法形成电极2。在这种情况下，非晶层的沉积被分开多次进行，使得一次沉积的非晶层的厚度不大于根据根据下式确定的临界应力值规定的厚度在每个非晶层的沉积过程完成之后，非晶材料结晶，重复沉积非晶层的过程和结晶非晶材料的过程，由此多晶层6的层压结构具有必要的获得膜厚度。利用上述结构，可以防止半导体器件的电特性的恶化和层之间的剥离等缺陷的发生，层中的裂纹等，并且可以获得通过多晶材料的层叠，具有所需膜厚度的小晶粒尺寸的多晶层。

14. 发明授权

US5465947A Apparatus for discharging sheets from a sorter 失效
标题翻译：用于从分拣机排出纸张的装置
公开(公告)号：US5465947A
公开(公告)日：1995-11-14
申请号：US214452
申请日：1994-03-18
申请人： Keiji Okumura , Takeshi Aoki , Yoshio Sugishima , Satoru Hayama , Keiichi Taguchi , Yuichiro Iwase , Noriaki Okamoto
发明人： Keiji Okumura , Takeshi Aoki , Yoshio Sugishima , Satoru Hayama , Keiichi Taguchi , Yuichiro Iwase , Noriaki Okamoto
IPC分类号： B65H31/30 , B65H39/11 , G03G15/00 , B42C1/12
CPC分类号： B65H31/3027 , B65H31/3045 , B65H39/11 , G03G15/6538 , B65H2403/511 , B65H2408/113 , B65H2408/1141
摘要： A sheet stack handling apparatus discharges sheet stacks from a bin of a sorter disposed on the side of an image forming apparatus, and includes a sheet stocker, a sheet stack transporting route, and a sheet grasping mechanism. The stack handling or discharge apparatus is disposed on the front side of the sorter. The sheet stocker is disposed in the bottom of the discharging apparatus and stores the sheet stacks. The sheet stack transporting route is provided in the discharging apparatus and extends laterally from the side of the bin and downward to the sheet stacker. The sheet stack grasping mechanism is disposed under the sheet stack transporting route. The sheet stack grasping mechanism grasps a sheet stack in a bin of the sorter, then moves length-wise away from the image forming apparatus, and then moves width-wise to transfer the stack from the bin into the sheet stocker.
摘要翻译：纸张堆垛处理装置从设置在图像形成装置一侧的分拣机的箱排出纸摞，并且包括片材储存器，纸摞输送路径和纸张抓取机构。堆垛处理或排放装置设置在分拣机的前侧。片材储存器设置在排出装置的底部并存储片材堆叠。片材输送路径设置在排出装置中，并且从箱的侧面向下延伸到纸张堆垛机。片材堆垛机构设置在纸摞输送路径的下方。片材堆垛机构抓住分拣机的料仓中的纸叠，然后从图像形成装置纵向移动，然后横向移动，以将纸堆从纸箱转移到纸张储存器中。

15. 发明授权

US5202810A Magnetic disk having an improved surface configuration 失效
标题翻译：具有改进的表面构造的磁盘
公开(公告)号：US5202810A
公开(公告)日：1993-04-13
申请号：US513609
申请日：1990-04-24
申请人： Takao Nakamura , Nobuya Sekiyama , Masaki Ohura , Yoshiki Kato , Noriaki Okamoto , Masami Masuda
发明人： Takao Nakamura , Nobuya Sekiyama , Masaki Ohura , Yoshiki Kato , Noriaki Okamoto , Masami Masuda
IPC分类号： G11B5/82 , G11B5/84
CPC分类号： G11B5/8404 , G11B5/82 , Y10S428/90
摘要： A magnetic disk includes a non-magnetic substrate with a surface processed layer having fine irregularities formed at least on a main surface thereof, and at least thin film magnetic film and a protective film formed in that order on the non-magnetic substrate in such a manner that the fine irregularities are duplicated thereof. The surface of the surface processed layer of the non-magnetic substrate has protrusions whose surfaces are made flat and a configuration which exhibits a three-dimensional bearing curve in which the bearing ratio at a section taken at a depth from the top of the surface which corresponds to the portion of the top portion deformed by the head load during the contact start-stops drive is between 0.1% and 10%. The protrusions formed on the surface processed layer have a height ranging from several nm to several tens of nm. The bearing ratio is a value obtained at a depth of 5 to 10 nm from the top of the protrusions.
摘要翻译：磁盘包括具有至少在其主表面上形成有细微凹凸的表面处理层的非磁性基板，以及至少在非磁性基板上形成的薄膜磁性膜和保护膜。方式是细微的不规则被复制。非磁性基板的表面处理层的表面具有突起，其表面是平坦的，并且具有三维轴承曲线的构造，其中在从表面的顶部开始的深度处截取的截面的轴承比对应于在接触开始 - 停止期间头部负载变形的顶部的部分在0.1％和10％之间。形成在表面处理层上的突起具有几nm至几十nm的高度。轴承比是从突起的顶部开始的深度为5〜10nm的值。

16. 发明授权

US06949387B2 Method of designing a semiconductor device 失效
标题翻译：设计半导体器件的方法
公开(公告)号：US06949387B2
公开(公告)日：2005-09-27
申请号：US10626718
申请日：2003-07-25
申请人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
发明人： Hideo Miura , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
IPC分类号： H01L21/762 , H01L27/08 , H01L21/66
CPC分类号： H01L21/76205 , H01L21/76202 , H01L27/0802
摘要： A technique for a semiconductor device is provided that includes forming circuit regions on a device formation region and device isolation regions on a semiconductor substrate, a ratio of the width of a device isolation region to the width of adjacent circuit regions thereto is set at 2 to 50. A design method is also provided and includes conducting measurements such as of thicknesses of a pad oxide film and a nitride film, the internal stress of the nitride film, the width of both device formation and isolation regions, the depth of the etched portion of the nitride film for forming the groove in a device isolation region, conducting stress analysis in the proximity of the groove due to thermal oxidation, and setting values pertaining to the width of the device formation region and of the device isolation region which do not lead to occurrence of dislocation.
摘要翻译：提供了一种半导体器件的技术，其包括在器件形成区域上形成电路区域和半导体衬底上的器件隔离区域，器件隔离区域的宽度与其相邻电路区域的宽度的比率被设置为2至还提供了一种设计方法，包括进行测量，例如衬垫氧化膜和氮化物膜的厚度，氮化物膜的内部应力，器件形成和隔离区域的宽度，蚀刻部分的深度的用于在器件隔离区域中形成沟槽的氮化物膜，由于热氧化而在沟槽附近进行导电应力分析，以及与器件形成区域的宽度和不引导的器件隔离区域的设定值发生脱位。

17. 发明授权

US06379998B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06379998B1
公开(公告)日：2002-04-30
申请号：US08007061
申请日：1993-01-21
申请人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
发明人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
IPC分类号： H01L2144
CPC分类号： G06F9/3879 , G06F9/3877 , G06F15/167 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L29/0657 , H01L2223/54426 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/73267 , H01L2224/95136 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/351 , H01L2924/00
摘要： A process of contacting sides of a plurality of chips having semiconductor elements formed in a substrate surface, directly to each other on the same {111} crystal plane.
摘要翻译：使形成在衬底表面中的具有半导体元件的多个芯片的侧面接触在相同的{111}晶面上彼此直接接触的工艺。

18. 发明授权

US5909052A Semiconductor device having plural chips with the sides of the chips in face-to-face contact with each other in the same crystal plane 失效
标题翻译：具有多个芯片的半导体器件，其芯片的侧面在相同的晶面内彼此面对面地接触
公开(公告)号：US5909052A
公开(公告)日：1999-06-01
申请号：US449722
申请日：1995-05-24
申请人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
发明人： Hiroyuki Ohta , Hideo Miura , Mitsuo Usami , Masatsugu Kametani , Munetoshi Zen , Noriaki Okamoto
IPC分类号： G06F9/38 , G06F15/167 , H01L21/98 , H01L25/065 , H01L29/06 , H01L29/04
CPC分类号： G06F9/3879 , G06F15/167 , G06F9/3877 , H01L24/24 , H01L24/82 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2223/54426 , H01L2224/24137 , H01L2224/24225 , H01L2224/24227 , H01L2224/95136 , H01L29/0657 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/10157 , H01L2924/10158 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/351
摘要： Prevention of reduction in the production yield due to the increase in the area of a semiconductor chip permits a sophisticated-performance single-chip semiconductor device to be fabricated. This also permits a many-kind small-amount production of semiconductor devices to be implemented. After plural semiconductor chips 2 and 3 are fabricated separately, only defect-free chips of them are selected. The selected defect-free chips are connected in contact between their side walls of their densest faces of atoms of their substrates so that the surfaces 4a and 4b where elements are to be formed are located in the same plane. Thus, even when the chip area is increased, reduction of the production yield can be prevented, thereby permitting a large-area sophisticated-performance single chip semiconductor device to be fabricated. If many kinds of semiconductor chips are prepared and connected in their combination in a variety of forms, it is possible to realize a many-kind small-amount production of semiconductor devices.
摘要翻译：由于半导体芯片面积的增加，防止生产成品率的下降，可以制造精密性能的单芯片半导体器件。这也允许实现多种少量的半导体器件的生产。在单独制造多个半导体芯片2和3之后，仅选择它们的无缺陷芯片。所选择的无缺陷芯片在它们的基板的最密实面的侧壁之间接触连接，使得要形成元件的表面4a和4b位于同一平面中。因此，即使在芯片面积增加的情况下，也可以防止生产成品率的降低，从而可以制造大面积复杂性能的单芯片半导体器件。如果准备多种半导体芯片并以各种形式组合连接，则可以实现多种少量的半导体器件的制造。

19. 发明授权

US5889312A Semiconductor device having circuit element in stress gradient region by film for isolation and method of manufacturing the same 失效
标题翻译：具有用于隔离膜的应力梯度区域中的电路元件的半导体器件及其制造方法
公开(公告)号：US5889312A
公开(公告)日：1999-03-30
申请号：US890997
申请日：1997-07-10
申请人： Hideo Miura , Yasunobu Tanizaki , Eiji Wakimoto , Shinji Sakata , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
发明人： Hideo Miura , Yasunobu Tanizaki , Eiji Wakimoto , Shinji Sakata , Makoto Ogasawara , Hiroo Masuda , Jun Murata , Noriaki Okamoto
IPC分类号： H01L21/762 , H01L27/08 , H01L3/22 , H01L21/265
CPC分类号： H01L21/76202 , H01L27/0802
摘要： A semiconductor device includes a thermal oxide film for isolation, a semiconductor region that becomes an element forming region with the circumference thereof surrounded by the oxide film and diffused resistance layers in the semiconductor region and provides a structure for controlling resistance value variation of diffused resistors originated in a stress generated at time of forming the oxide film for isolation. A distance between an end portion on a longer side closest to a thermal oxide film of the diffused layer and an end of the thermal oxide film is apart from each other by a predetermined value determined by stress distribution in the semiconductor region or by at least 4 .mu.m or more, the longitudinal direction of the diffused layer portion formed from the end of the thermal oxide film over to a stress distribution (gradient) forming region in the semiconductor region is parallel to the forming direction of the stress gradient, and resistance value distribution is formed parallel to the stress gradient in the diffused layer formed from the end of the thermal oxide film over to the stress distribution forming region in the semiconductor region.
摘要翻译：半导体器件包括用于隔离的热氧化膜，半导体区域，其成为元件形成区域，其周边被半导体区域中的氧化物膜和扩散电阻层包围，并且提供用于控制起始的扩散电阻器的电阻值变化的结构在形成用于隔离的氧化膜时产生的应力。最靠近扩散层的热氧化膜的较长侧的端部与热氧化膜的端部之间的距离彼此分开由半导体区域中的应力分布确定的预定值或至少4 从热氧化膜的端部到半导体区域的应力分布（梯度）形成区域形成的扩散层部的纵向方向平行于应力梯度的形成方向，电阻值分布形成为平行于从热氧化膜的端部到半导体区域中的应力分布形成区域形成的扩散层中的应力梯度。

20. 发明授权

US5452887A Sorter for an image forming apparatus 失效
标题翻译：用于图像形成装置的分拣机
公开(公告)号：US5452887A
公开(公告)日：1995-09-26
申请号：US214710
申请日：1994-03-18
申请人： Keiji Okumura , Takeshi Aoki , Toru Himegi , Noriaki Okamoto
发明人： Keiji Okumura , Takeshi Aoki , Toru Himegi , Noriaki Okamoto
IPC分类号： B65H39/11 , B42C1/12 , B65H31/30 , B65H31/34 , G03G15/00 , B65H39/10
CPC分类号： B42C1/125
摘要： A sorter for sorting sheets discharged from an image forming apparatus, comprising a sorter frame; a plurality of bins disposed in the vertical direction, for making stacks of the discharged sheets; a bin frame incorporating the bins and having an opening on a front side adapting the sorter for a stack-removal operation; a processing mechanism provided on the image-forming-apparatus side of the bins, for processing the stacks; a first driving mechanism for driving a bin at a bin-processing position opposite the processing mechanism to slide toward the processing mechanism for feeding the image-forming-apparatus side end of said stack to the processing mechanism; a single unit slide guide for guiding a bin at the bin processing position toward the processing mechanism; a second driving mechanism including a pair of rods disposed vertically on the front and back sides of the sorter frame, the rods move the bins and the bin frame vertically and support the bins from either side at a position inward from an image-forming-apparatus end of the bins, whereby the bins extend outward from the bin support position toward the image-forming-apparatus; and a tamping mechanism including a member for abutting with a side of the stacks to make neat stacks of sheets in the bins, the abutting member is provided on the front side of the sorter frame and beside the bin support position of the rod.
摘要翻译：一种用于对从图像形成装置排出的纸张进行分类的分拣机，包括分拣机框架; 沿垂直方向设置的多个箱，用于使排出的纸张堆叠; 一个装有箱子的箱体框架，并且在正面上具有一个开口，使得分类器能够进行排纸操作; 处理机构，设置在所述箱的图像形成装置侧，用于处理所述堆叠; 用于在与所述处理机构相对的仓处理位置处驱动仓的第一驱动机构朝向所述堆叠的图像形成装置侧端向处理机构供给的处理机构滑动; 单个单元滑动引导件，用于将处理仓处理位置处的仓导向处理机构; 第二驱动机构，其包括垂直设置在分拣机框架的前侧和后侧的一对杆，所述杆垂直地移动所述箱和所述仓箱，并且在图像形成装置内侧的位置处从所述一侧支撑所述箱体从而使箱从箱支撑位置朝向图像形成装置向外延伸; 以及捣固机构，其包括用于与所述堆叠的一侧抵接以在所述箱中形成整齐的片材的构件，所述抵接构件设置在所述分拣机框架的前侧以及所述杆的所述料仓支撑位置的旁边。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式