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11. 发明申请

US20070259280A1 Photomask, exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20070259280A1
公开(公告)日：2007-11-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/20 , G03F1/00 , G03C5/00 , G03F7/40 , G03F7/38
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

12. 发明申请

US20050030502A1 Photomask, exposure control method and method of manufacturing a semiconductor device 审中-公开
标题翻译：光掩模，曝光控制方法和制造半导体器件的方法
公开(公告)号：US20050030502A1
公开(公告)日：2005-02-10
申请号：US10874192
申请日：2004-06-24
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03B27/42 , G03F1/26 , G03F1/38 , G03F1/44 , G03F1/68 , G03F1/70 , G03F7/20 , H01L21/027 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522
CPC分类号： G03F1/44
摘要： A photomask transferring a light shield film pattern formed on a transparent substrate by a projection exposure apparatus, comprising a circuit pattern for transferring a predetermined pattern to a resist film, and an exposure monitor mark, the exposure monitor mark being formed in a manner that blocks having a predetermined width p, which are not resolved by the projection exposure apparatus, are intermittently or continuously arrayed along one direction, light shield and transmission portions are arrayed along one direction in each of the blocks, the blocks are arrayed so that a dimension ratio of the light shield and transmission portions of the blocks simply changes and the phase difference of exposure light passing through adjacent light transmission portions is approximately 180°.
摘要翻译：一种光掩模，其通过投影曝光装置将形成在透明基板上的遮光膜图案转印，所述投影曝光装置包括用于将预定图案转印到抗蚀剂膜的电路图案，以及曝光监视标记，所述曝光监视标记以块具有未被投影曝光装置解析的预定宽度p沿着一个方向间歇地或连续地排列，在每个块中沿着一个方向排列有光屏蔽和透射部分，块被排列成使得尺寸比的光屏蔽和透射部分简单地改变，并且穿过相邻光传输部分的曝光光的相位差大约为180°。

13. 发明授权

US07396621B2 Exposure control method and method of manufacturing a semiconductor device 失效
标题翻译：曝光控制方法及制造半导体器件的方法
公开(公告)号：US07396621B2
公开(公告)日：2008-07-08
申请号：US11819375
申请日：2007-06-27
申请人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Satoshi Tanaka , Masafumi Asano
IPC分类号： G03F7/16 , G03F7/20 , G03F7/38 , G03F1/14
CPC分类号： G03F1/44
摘要： A method of manufacturing a semiconductor device includes preparing a projection exposure apparatus and a photomask, the photomask having a transparent substrate and a light shield film arranged in patterns to be transferred to a resist film on a wafer. The patterns include a circuit mask pattern, and first and second mark mask patterns having dimensions which change in accordance with exposure of the resist film. The method further includes forming first and second exposure monitor marks by causing phasing differences of 180 degrees and zero degrees, respectively, of light passing through the corresponding first and second mark mask patterns; measuring the first and second exposure monitor marks; calculating first and second effective exposures based on measured dimensions of the first and second exposure monitor marks; comparing variations of the first and second effective exposures; and changing at least one of a deposit condition of a front-end film formed under the resist film or a resist film coating condition if a variation of the first effective exposure differs from a variation of the second effective exposure.
摘要翻译：制造半导体器件的方法包括制备投影曝光设备和光掩模，所述光掩模具有透明基板和以图案排列的光屏蔽膜，以转印到晶片上的抗蚀剂膜。图案包括电路掩模图案，以及具有根据抗蚀剂膜的曝光而变化的尺寸的第一和第二标记掩模图案。该方法还包括通过分别通过相应的第一和第二标记掩模图案的光180度和零度的相位差来形成第一和第二曝光监视标记; 测量第一和第二曝光监视标记; 基于第一和第二曝光监视标记的测量尺寸来计算第一和第二有效曝光; 比较第一和第二有效曝光的变化; 以及如果第一有效曝光的变化与第二有效曝光的变化不同，则改变形成在抗蚀剂膜下方的前端膜的沉积条件或抗蚀剂膜涂覆条件中的至少一个。

14. 发明申请

US20070177126A1 Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method 有权
公开(公告)号：US20070177126A1
公开(公告)日：2007-08-02
申请号：US11710410
申请日：2007-02-26
申请人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
发明人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
IPC分类号： G03B27/58
CPC分类号： G01B21/30 , G01B11/306 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

15. 发明授权

US06376139B1 Control method for exposure apparatus and control method for semiconductor manufacturing apparatus 失效
标题翻译：半导体制造装置的曝光装置的控制方法和控制方法
公开(公告)号：US06376139B1
公开(公告)日：2002-04-23
申请号：US09671502
申请日：2000-09-27
申请人： Tadahito Fujisawa , Soichi Inoue , Kenji Kawano , Shinichi Ito , Ichiro Mori
发明人： Tadahito Fujisawa , Soichi Inoue , Kenji Kawano , Shinichi Ito , Ichiro Mori
IPC分类号： G03F900
CPC分类号： G03F7/70625 , G03F7/70633 , G03F7/70641
摘要： A control method for an exposure apparatus, in which an exposure amount and a focus value are set in transferring a circuit pattern on a mask onto a resist formed on a wafer by the exposure apparatus, includes the steps of arranging, on the mask, an exposure amount monitor mark and a focus monitor mark used to separately monitor the effective exposure amount and the focus value on the wafer, transferring the exposure amount monitor mark and the focus monitor mark onto the resist to form an exposure amount monitor pattern and a focus monitor pattern, measuring the states of the exposure amount monitor pattern and the focus monitor pattern at least at one of timings after exposure, after post exposure baking, during a cooling process after baking, during a process after cooling, during development, and after development, on the basis of the measurement results, calculating the difference between an optimum exposure amount value and an exposure amount set value set in the exposure apparatus and the difference between an optimum focus value and a focus set value set in the exposure apparatus in transferring the exposure amount monitor mark and the focus monitor mark onto the resist, and changing the focus set value and the exposure amount set value of the exposure apparatus in accordance with the calculated differences.
摘要翻译：一种曝光装置的控制方法，其中设置曝光量和聚焦值以将掩模上的电路图案转印到通过曝光装置在晶片上形成的抗蚀剂上的步骤包括以下步骤：在掩模上布置曝光量监视标记和用于分别监视晶片上的有效曝光量和聚焦值的聚焦监视器标记，将曝光量监视标记和聚焦监视标记转印到抗蚀剂上以形成曝光量监视器图案和聚焦监视器至少在曝光后的定时，曝光后烘烤，烧成后的冷却过程中，冷却后，显影处理和显影后的处理中，至少测定曝光量监视器图案和聚焦监视器图案的状态，基于测量结果，计算最佳曝光量值与曝光设定中设定的曝光量设定值之间的差以及将曝光量监视标记和聚焦监视标记转印到抗蚀剂上的曝光装置中设置的最佳聚焦值和聚焦设定值之间的差异，并且改变曝光的聚焦设定值和曝光量设定值仪器按照计算出的差异。

16. 发明授权

US5627626A Projectin exposure apparatus 失效
标题翻译：投影仪曝光装置
公开(公告)号：US5627626A
公开(公告)日：1997-05-06
申请号：US468327
申请日：1995-06-06
申请人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
发明人： Soichi Inoue , Tadahito Fujisawa , Shin-ichi Ito , Takashi Sato , Shuichi Tamamushi , Keiji Horioka
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70066 , G03F7/70091 , G03F7/701 , G03F7/70125 , G03F7/70241 , G03F7/70333
摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. A special stop is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source so that intensities of both peripheral and central portions are larger than an intensity of an intermediate portion. In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.TO
摘要翻译：投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统以及用于将透过该掩模版的光投射到晶片上的投影光学系统。布置特殊停止点作为均匀照明面罩的次要源。特殊止挡用于设定次级源的出射平面内的强度分布，使得外周和中心部分的强度大于中间部分的强度。此外，该装置包括半透明掩模，该半色调掩模允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×D0或= T <= 0.30×YTO。通过透光性基板的光的相位差由180×（2n + 1）+或-30（度）（n为整数）表示。

17. 发明申请

US20070177127A1 Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method 有权
标题翻译：晶片平坦度评估方法，执行评估方法的晶片平整度评估装置，使用评估方法的晶片制造方法，使用评估方法的晶片质量保证方法，使用评估方法的半导体器件制造方法和使用由评估方法
公开(公告)号：US20070177127A1
公开(公告)日：2007-08-02
申请号：US11710552
申请日：2007-02-26
申请人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
发明人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
IPC分类号： G03B27/58
CPC分类号： G01B21/30 , G01B11/306 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.
摘要翻译：公开了一种晶片平坦度评估方法，其包括测量晶片的前后表面形状。测量的晶圆正面分为几个部位。然后，根据要评估的位置的位置选择平坦度计算方法，并获得晶片表面的平坦度。

18. 发明授权

US07230680B2 Wafer flatness evaluation method, wafer flatness evaluation apparatus carrying out the evaluation method, wafer manufacturing method using the evaluation method, wafer quality assurance method using the evaluation method, semiconductor device manufacturing method using the evaluation method and semiconductor device manufacturing method using a wafer evaluated by the evaluation method 有权
公开(公告)号：US07230680B2
公开(公告)日：2007-06-12
申请号：US10739275
申请日：2003-12-19
申请人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
发明人： Tadahito Fujisawa , Soichi Inoue , Makoto Kobayashi , Masashi Ichikawa , Tsuneyuki Hagiwara , Kenichi Kodama
IPC分类号： G03B27/58 , G03B27/42
CPC分类号： G01B21/30 , G01B11/306 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： There is disclosed a wafer flatness evaluation method includes measuring front and rear surface shapes of a wafer. The wafer front surface measured is divided into sites. Then, a flatness calculating method is selected according to a position of the site to be evaluated and flatness in the wafer surface is acquired.

19. 发明授权

US06919153B2 Dose monitoring method and manufacturing method of semiconductor device 失效
标题翻译：半导体器件的剂量监测方法及制造方法
公开(公告)号：US06919153B2
公开(公告)日：2005-07-19
申请号：US10611247
申请日：2003-07-02
申请人： Tadahito Fujisawa , Soichi Inoue , Takashi Sato , Masafumi Asano
发明人： Tadahito Fujisawa , Soichi Inoue , Takashi Sato , Masafumi Asano
IPC分类号： H01L21/027 , G03F7/20 , G03F7/207 , G03C5/00 , G03F9/00
CPC分类号： G03F7/70558
摘要： There is disclosed a dose monitor method comprising illuminating a mask with illumination light, which is disposed in a projection exposure apparatus and in which a dose monitor pattern is formed, passing only a 0th-order diffracted light through a pupil surface of the projection exposure apparatus in diffracted lights of the dose monitor pattern, and transferring a 0th-order diffracted light image of the dose monitor pattern onto a substrate to measure dose, wherein during the illuminating, a center of gravity of the 0th-order diffracted light image passed through the dose monitor pattern on the pupil surface of the projection exposure apparatus is shifted from an optical axis of the projection exposure apparatus.
摘要翻译：公开了一种剂量监测方法，其包括用照射光照射掩模，所述照明光设置在投影曝光装置中，并且其中形成剂量监测器图案，仅使0级衍射光通过投影曝光装置的光瞳表面在剂量监视器图案的衍射光中，并将剂量监视器图案的0级衍射光图像转印到衬底上以测量剂量，其中在照明期间，0级衍射光图像的重心通过投影曝光装置的光瞳表面上的剂量监视器图案从投影曝光装置的光轴移位。

20. 发明授权

US06252651B1 Exposure method and exposure apparatus using it 失效
标题翻译：使用曝光方法和曝光装置
公开(公告)号：US06252651B1
公开(公告)日：2001-06-26
申请号：US09437259
申请日：1999-11-10
申请人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Tadahito Fujisawa , Satoshi Tanaka , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03B2742
CPC分类号： G03F7/70058 , G03F1/26 , G03F7/70425 , H01L21/28123 , H01L21/76816
摘要： An exposure method includes the phase-shifting mask supply step, the phase-shifting mask being prepared by selectively forming a light-shielding portion and a phase shifter on a substrate, and the resist exposure step of performing both exposure of a resist by dark field illumination light and exposure of the resist by bright field illumination light by using the phase-shifting mask, thereby removing residual resist generated by the influence of the edge of the phase shifter.
摘要翻译：曝光方法包括相移掩模提供步骤，通过在基板上选择性地形成遮光部分和移相器来制备相移掩模，以及抗蚀剂曝光步骤，通过暗场曝光抗蚀剂通过使用移相掩模通过亮场照明光照射光和抗蚀剂曝光，从而去除由移相器的边缘的影响产生的残留抗蚀剂。

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