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11. 发明授权

US09272674B2 Wire harness continuity inspection device, wire harness continuity inspection program, and wire harness continuity inspection method 有权
标题翻译：线束连续性检查装置，线束连续性检查程序和线束连续性检查方法
公开(公告)号：US09272674B2
公开(公告)日：2016-03-01
申请号：US13577703
申请日：2011-02-04
申请人： Noriaki Sasaki , Yasuhiro Mochizuki , Kohta Ohishi
发明人： Noriaki Sasaki , Yasuhiro Mochizuki , Kohta Ohishi
IPC分类号： G01R31/04 , G01R31/02 , B60R16/02
CPC分类号： B60R16/0207 , G01R31/045
摘要： A wire harness continuity inspection method includes: specifying a first certain electrical wire and a second certain electrical wire of which one end is connected to the other end of the first certain electrical wire, described in the first region-based connector/wiring information, and regarding them as a single electrical wire; referring to auxiliary device-based wiring information to obtain a first terminal of a first electrical component and a second terminal of a second electrical component connected by a circuit line, which are described in the auxiliary device-based wiring information; referring to the region-based connector/wiring information to specify a first electrical wire of which one end is connected to the first terminal of the first electrical component, described in the region-based connector/wiring information; and determining whether the terminal connected to the other end of the first electrical wire is identical to the second terminal of the second electrical component.
摘要翻译：线束连续性检查方法包括：在第一区域连接器/布线信息中描述的第一特定电线和第一特定电线，其一端连接到第一特定电线的另一端，以及将其作为单根电线; 参考基于辅助设备的布线信息，以获得在基于辅助设备的布线信息中描述的第一电气部件的第一端子和由电路线连接的第二电气部件的第二端子; 参考基于区域的连接器/布线信息，以指定在基于区域的连接器/布线信息中描述的第一电线，其一端连接到第一电气部件的第一端子; 以及确定连接到第一电线的另一端的端子是否与第二电气部件的第二端子相同。

12. 发明申请

US20080225254A1 PHOTOMASK, PHOTOMASK SUPERIMPOSITION CORRECTING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译： PHOTOMASK，PHOTOMASK超级校正方法和半导体器件的制造方法
公开(公告)号：US20080225254A1
公开(公告)日：2008-09-18
申请号：US12047516
申请日：2008-03-13
申请人： Nobuhiro KOMINE , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
发明人： Nobuhiro KOMINE , Kazutaka Ishigo , Noriaki Sasaki , Masayuki Hatano
IPC分类号： G03B27/42 , G03F1/00
CPC分类号： G03F9/7076 , G03F1/36 , G03F1/42 , G03F7/70633
摘要： In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.
摘要翻译：在其中在透光基底上形成器件图案，对准标记和叠加检查标记的光掩模中，每个对准标记和叠加检查标记都包括主标记部分和第一和第二辅助图案部分。主标记部分由空间图案和线条图案之一构成，该图形具有在半导体晶片上形成的感光膜上被分辨的线宽，并且第一和第二辅助图案部分中的每一个包括辅助图案由空间图案的重复图案和线图案的重复图案之一构成，重复图案具有在感光膜上不被分辨的线宽。重复图案的间距等于设备图案的最小间距。

13. 发明申请

US20060289805A1 Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device 失效
公开(公告)号：US20060289805A1
公开(公告)日：2006-12-28
申请号：US11430044
申请日：2006-05-09
申请人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
发明人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
IPC分类号： G21G5/00
CPC分类号： H01J37/3026 , H01J2237/31761
摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

14. 发明授权

US5330710A Nickel-base alloy for glass-contracting member used in unenergized state 失效
标题翻译：用于未充电状态的玻璃收缩构件的镍基合金
公开(公告)号：US5330710A
公开(公告)日：1994-07-19
申请号：US838207
申请日：1992-03-06
申请人： Toshio Masaki , Noriaki Sasaki , Shin-ichiro Torata , Hiroshi Igarashi , Tetsuya Shimizu , Tomohito Iikubo
发明人： Toshio Masaki , Noriaki Sasaki , Shin-ichiro Torata , Hiroshi Igarashi , Tetsuya Shimizu , Tomohito Iikubo
IPC分类号： C03B5/167 , C03B9/48 , C22C19/05 , C22C30/00 , H05B3/03 , C22C19/03
CPC分类号： H05B3/03 , C03B5/1672 , C03B9/48 , C22C19/058 , C22C30/00 , Y02P40/57
摘要： A nickel-base alloy for a glass-contacting member used in an unenergized state and having a composition comprising by weight 25 to 40% of chromium, 10 to 45% of cobalt, optionally 0.1 to 3.0% of titanium and optionally 0.01 to 0.05% of at least one element selected from among rare earth metals with the balance consisting of nickel and unavoidable impurities.
摘要翻译： PCT No.PCT / JP90 / 00879 Sec。 371日期：1992年3月6日 102（e）1992年3月6日PCT PCT 1990年7月9日PCT公布。出版物WO92 / 01076 日本1992年1月23日。一种用于未致电状态的玻璃接触部件的镍基合金，其组成包含25〜40重量％的铬，10〜45重量％的钴，或0.1〜3.0重量％钛和任选的0.01至0.05％的至少一种选自稀土金属的元素，余量由镍和不可避免的杂质组成。

15. 发明授权

US4782497A Electric melting furnace for glassifying high-radioactive waste 失效
标题翻译：用于玻璃化高放射性废物的电熔炉
公开(公告)号：US4782497A
公开(公告)日：1988-11-01
申请号：US938183
申请日：1986-12-05
申请人： Noriaki Sasaki , Hiroshi Igarashi , Noboru Endo , Katsumi Inada , Toshio Nakamura , Hirokazu Takeuchi
发明人： Noriaki Sasaki , Hiroshi Igarashi , Noboru Endo , Katsumi Inada , Toshio Nakamura , Hirokazu Takeuchi
IPC分类号： C03B5/00 , C03B5/027 , G21F9/30
CPC分类号： G21F9/305 , C03B5/005 , C03B5/0275 , Y02P40/52
摘要： An electric melting furnace for glassifying high-radioactive waste characterized in that, in a furnace for melting glass containing platinum-group elements which has an outlet of glass at the bottom part of a melting tank, the bottom of the furnace surrounding the outlet has an inclination of more than 30.degree. and not more than 70.degree. with respect to the horizontal plane toward the cullet, and the distance l.sub.1 between a surface-inside opening part of the outlet and bottom ends of at least a pair of electrodes (3a, 3b) for supplying most of power required for glass melting is a half or more, but not exceeding, of the distance (l.sub.2) between the electrodes (3a, 3b).
摘要翻译：一种用于玻璃化高放射性废物的电熔炉，其特征在于，在熔融槽底部具有玻璃出口的含有铂族元素的玻璃熔化炉中，围绕出口的炉底部具有倾斜度相对于水平面朝向碎玻璃大于30度且不大于70度，以及至少一对电极（3a，3b）的出口的表面内侧开口部分和底端之间的距离l1 ）用于提供玻璃熔融所需的大部分功率是电极（3a，3b）之间的距离（l2）的一半或更多，但不超过其中之一。

16. 发明授权

US4413114A Aromatic copolyamide containing 3,4'-diphenylene moiety 失效
标题翻译：含有3,4'-二亚苯基部分的芳族共聚酰胺
公开(公告)号：US4413114A
公开(公告)日：1983-11-01
申请号：US363485
申请日：1982-03-30
申请人： Keizo Shimada , Hiroshi Mera , Noriaki Sasaki , Akihiro Aoki
发明人： Keizo Shimada , Hiroshi Mera , Noriaki Sasaki , Akihiro Aoki
IPC分类号： C08G69/00 , C08G69/32 , C08G69/40 , C08G69/42 , D01F6/80
CPC分类号： D01F6/805 , C08G69/32 , C08G69/40 , C08G69/42
摘要： An aromatic copolyamide comprising recurring units (A) of the formula (I), (B) of the formula (II) and (C) of the formula (III): ##STR1## wherein in (I), (II) and (III), Ar.sub.1 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented meta; Ar.sub.2 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented coaxially or in parallel to each other and radicals of the formula (IV): ##STR2## wherein Y.sub.1 and Y.sub.2 are independently ##STR3## and; X.sub.1, X.sub.2, X.sub.3, X.sub.4, X.sub.5 and X.sub.6 respectively are independently --NH-- and --CO-- radicals, connected to each other to form an amide bond (--NHCO-- or --CHNH--), and the molar proportions of said recurring units (A), (B), and (C) fall within a quadrilateral defined by the co-ordinates P, Q, R and S or on a twice-turned line defined by the co-ordinates Q, R, S and P:P (A 50, B 5, C 45)Q (A 5, B 5, C 90)R (A 5, B 40, C 55) andS (A 50, B 15, C 35)on a triangular composition diagram.
摘要翻译：包含式（I）的重复单元（A），式（II）的（B）和式（III）的（C））的芳族共聚酰胺：（I）X3Ar1X4和（II）X5Ar2X6 ）其中在（I），（II）和（III）中，Ar 1是亚苯基，亚萘基或亚联苯基，其各自具有取代的元素的两个价键; Ar 2是亚苯基，亚萘基或亚联苯基，其各自具有彼此同轴或平行取向的两个价键和式（IV）的基团：其中Y1和Y2独立地为＆lt; IMAGE＆gt;和 X1，X2，X3，X4，X5和X6分别独立地为-NH-和-CO-基团，彼此连接形成酰胺键（-NHCO-或-CHNH-），所述重复单元的摩尔比例（A），（B）和（C）落在由坐标P，Q，R和S所定义的四边形内，或者在由坐标Q，R，S和P定义的两倍线上：在三角形组成图上的P（A 50，B 5，C 45）Q（A 5，B 5，C 90）R（A 5，B 40，C 55）和S（A 50，B 15，C 35）。

17. 发明授权

US4355151A Aromatic copolyamide containing 3,4'-diamino diphenylene moiety 失效
标题翻译：含有3,4'-二氨基二亚苯基部分的芳族共聚酰胺
公开(公告)号：US4355151A
公开(公告)日：1982-10-19
申请号：US120992
申请日：1980-02-13
申请人： Keizo Shimada , Hiroshi Mera , Noriaki Sasaki , Akihiro Aoki
发明人： Keizo Shimada , Hiroshi Mera , Noriaki Sasaki , Akihiro Aoki
IPC分类号： C08G69/00 , C08G69/32 , C08G69/40 , C08G69/42 , D01F6/80
CPC分类号： D01F6/805 , C08G69/32 , C08G69/40 , C08G69/42
摘要： An aromatic copolyamide comprising recurring units (A) of the formula (I), (B) of the formula (II) and (C) of the formula (III): ##STR1## wherein in (I), (II) and (III) Ar.sub.1 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented meta; Ar.sub.2 is phenylene, naphthylene or biphenylene radicals, each having two valence bonds oriented coaxially or in parallel to each other and radicals of the formula (IV): ##STR2## wherein Y.sub.1 and Y.sub.2 are independently; ##STR3## and; X.sub.1, X.sub.2, X.sub.3, X.sub.4, X.sub.5 and X.sub.6 respectively are independently --NH-- and --CO-- radicals, connected to each other to form an amide bond (--NHCO-- or --CHNH--), and the molar proportions of said recurring units (A), (B) and (C) fall within a quadrilateral defined by the co-ordinates P, Q, R and S or on a twice-turned line defined by the co-ordinates Q,R,S, and P:P (A 50, B 5, C 45)Q (A 5, B 5, C 90)R (A 5, B 40, C 55) andS (A 50, B 15, C 35)on a triangular composition diagram.
摘要翻译：包含式（I）的重复单元（A），式（II）的（B）和式（III）的（C））的芳族共聚酰胺：（I）X3Ar1X4（II）和X5Ar2X6 ）其中在（I），（II）和（III）中，Ar 1是亚苯基，亚萘基或亚联苯基，每个具有取代的二价键; Ar 2是亚苯基，亚萘基或亚联苯基，其各自具有彼此同轴或平行取向的两个价键和式（IV）的基团：其中Y1和Y2独立地表示：和 X1，X2，X3，X4，X5和X6分别独立地为-NH-和-CO-基团，彼此连接形成酰胺键（-NHCO-或-CHNH-），所述重复单元的摩尔比例（A），（B）和（C）落在由坐标P，Q，R和S所定义的四边形内，或者在由坐标Q，R，S和P定义的两次转弯线上：在三角形组成图上的P（A 50，B 5，C 45）Q（A 5，B 5，C 90）R（A 5，B 40，C 55）和S（A 50，B 15，C 35）。

18. 发明授权

US07889910B2 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program 失效
标题翻译：字符图案提取方法，带电粒子束绘制方法和字符图案提取程序
公开(公告)号：US07889910B2
公开(公告)日：2011-02-15
申请号：US11797531
申请日：2007-05-04
申请人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
发明人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
IPC分类号： G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
摘要翻译：字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案，数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间最缩短。

19. 发明授权

US07482604B2 Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device 失效
标题翻译：电子束光刻设备，光刻方法，光刻程序和半导体器件的制造方法
公开(公告)号：US07482604B2
公开(公告)日：2009-01-27
申请号：US11430044
申请日：2006-05-09
申请人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
发明人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
IPC分类号： G21G5/00
CPC分类号： H01J37/3026 , H01J2237/31761
摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.
摘要翻译：根据本发明的一个方面，提供了一种电子束光刻设备，包括：第一设定单元，被配置为基于半导体衬底的布局信息来设置半导体衬底上的绘制位置;第二设置单元，被配置为设置有效范围基于所述半导体衬底的形状信息在所述半导体衬底上，确定单元，被配置为确定所述绘制位置是否在所述有效范围内;以及照射单元，被配置为当所述确定单元确定时照射所述半导体衬底电子束绘图位置在有效范围内。

20. 发明申请

US20070263921A1 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program 失效
标题翻译：字符图案提取方法，带电粒子束绘制方法和字符图案提取程序
公开(公告)号：US20070263921A1
公开(公告)日：2007-11-15
申请号：US11797531
申请日：2007-05-04
申请人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
发明人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
IPC分类号： G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
摘要翻译：字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案，数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间最缩短。

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