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11. 发明授权

US09184381B2 Nonvolatile storage element and method for manufacturing same 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US09184381B2
公开(公告)日：2015-11-10
申请号：US13810800
申请日：2011-10-06
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima , Shinichi Yoneda
IPC分类号： H01L47/00 , H01L45/00 , H01L27/10
CPC分类号： H01L45/145 , H01L27/101 , H01L45/08 , H01L45/146 , H01L45/1608 , H01L45/1625
摘要： A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MOx (where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MOy (where x>y), and the third transition metal oxide layer having a composition expressed as MOz (where y>z).
摘要翻译：可变电阻非易失性存储元件包括：第一电极; 第二电极; 以及可变电阻层，其具有基于施加在所述电极之间的电信号而可逆地变化的电阻值，其中所述可变电阻层具有通过堆叠第一过渡金属氧化物层，第二过渡金属氧化物层和第三过渡金属氧化物层而形成的结构过渡金属氧化物层，第一过渡金属氧化物层具有以MOx表示的组成（其中M是过渡金属，O是氧），第二过渡金属氧化物层具有以MOy表示的组成（其中x> y ）和具有表示为MOz（其中y> z）的组成的第三过渡金属氧化物层。

12. 发明授权

US08889478B2 Method for manufacturing nonvolatile semiconductor memory element, and nonvolatile semiconductor memory element 有权
标题翻译：非易失性半导体存储元件的制造方法及非易失性半导体存储元件
公开(公告)号：US08889478B2
公开(公告)日：2014-11-18
申请号：US13637465
申请日：2011-11-18
申请人： Takumi Mikawa , Yukio Hayakawa , Yoshio Kawashima , Takeki Ninomiya
发明人： Takumi Mikawa , Yukio Hayakawa , Yoshio Kawashima , Takeki Ninomiya
IPC分类号： H01L45/00 , H01L21/8239 , H01L21/02 , H01L27/24 , H01L27/102
CPC分类号： H01L45/1233 , H01L27/1021 , H01L27/2409 , H01L45/08 , H01L45/146 , H01L45/1675
摘要： Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer.
摘要翻译：提供一种用于制造可变电阻非易失性半导体存储元件的方法，以及使得可以在初始击穿时以低电压和高速操作的可变电阻非易失性半导体存储元件，并且表现出良好的二极管元件特性。制造非易失性半导体存储元件的方法包括：在形成可变电阻元件的顶部电极之后，并且至少在形成MSM二极管元件的顶部电极之前，氧化以使可变电阻膜的一部分在一个周围的区域中绝缘可变电阻层的端面。

13. 发明授权

US08861257B2 Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element 有权
标题翻译：非易失性存储元件，其制造方法，非易失性存储器件以及用于非易失性存储元件的设计支持方法
公开(公告)号：US08861257B2
公开(公告)日：2014-10-14
申请号：US13634700
申请日：2011-11-24
申请人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00 , H01L27/10 , H01L45/00 , H01L27/02 , H01L27/24 , G11C13/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/55 , H01L27/02 , H01L27/2427 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A nonvolatile memory element includes a variable resistance layer located between a lower electrode and an upper electrode and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer includes at least two layers: a first variable resistance layer including a first transition metal oxide; and a second variable resistance layer including a second transition metal oxide and a transition metal compound. The second transition metal oxide has an oxygen content atomic percentage lower than an oxygen content atomic percentage of the first transition metal oxide, the transition metal compound contains either oxygen and nitrogen or oxygen and fluorine, and the second transition metal oxide and the transition metal compound are in contact with the first variable resistance layer.
摘要翻译：非易失性存储元件包括位于下电极和上电极之间的可变电阻层，并且具有基于施加在这些电极之间的电信号而可逆地改变的电阻值。可变电阻层包括至少两层：包含第一过渡金属氧化物的第一可变电阻层; 以及包含第二过渡金属氧化物和过渡金属化合物的第二可变电阻层。第二过渡金属氧化物的氧含量原子百分比低于第一过渡金属氧化物的氧含量原子百分比，过渡金属化合物含有氧和氮或氧和氟，第二过渡金属氧化物和过渡金属化合物与第一可变电阻层接触。

14. 发明授权

US08482958B2 Current steering element, memory element, memory, and method of manufacturing current steering element 有权
标题翻译：当前的导向元件，存储元件，存储器以及制造电流转向元件的方法
公开(公告)号：US08482958B2
公开(公告)日：2013-07-09
申请号：US13321018
申请日：2011-03-10
申请人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Koji Arita , Takumi Mikawa , Takeki Ninomiya
IPC分类号： G11C11/00
CPC分类号： H01L27/2409 , H01L45/146
摘要： Provided is a current steering element that can prevent write didturb even when an electrical pulse with different polarities is applied and that can cause a large current to flow through a variable resistance element. The current steering element includes a first electrode (32), a second electrode (31), and a current steering layer (33). The current steering layer (33) comprises SiNx (where 0
摘要翻译：提供了即使当施加具有不同极性的电脉冲并且可能导致大电流流过可变电阻元件时也能够防止写入干扰的电流导向元件。当前的转向元件包括第一电极（32），第二电极（31）和电流转向层（33）。当前的转向层（33）包括加入氢或氟的SiNx（其中0 <0.85）。当D（D = D0×1022原子/ cm3）表示氢或氟的密度时，d（nm）表示电流导向层（33）的厚度，V0（V）表示适用于第一电极（32）和第二电极（31）D，x，d和V0满足下式。（ln（1000（C·exp（α·d）exp（β·x））-1）γ）2 @ V0 ）γ）2-（ln（10000（C·exp（α·d）exp（β·x））-1）γ）2/2> = 0其中C = k1×D0k2，α，β， k1和k2是常数。

15. 发明申请

US20130010529A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, NONVOLATILE MEMORY DEVICE, AND DESIGN SUPPORT METHOD FOR NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件，其制造方法，非易失性存储器件以及非易失性存储元件的设计支持方法
公开(公告)号：US20130010529A1
公开(公告)日：2013-01-10
申请号：US13634700
申请日：2011-11-24
申请人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
发明人： Yukio Hayakawa , Takumi Mikawa , Takeki Ninomiya
IPC分类号： H01L45/00 , G11C11/00 , G06F17/50
CPC分类号： H01L27/101 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/55 , H01L27/02 , H01L27/2427 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A nonvolatile memory element includes a variable resistance layer located between a lower electrode and an upper electrode and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer includes at least two layers: a first variable resistance layer including a first transition metal oxide; and a second variable resistance layer including a second transition metal oxide and a transition metal compound. The second transition metal oxide has an oxygen content atomic percentage lower than an oxygen content atomic percentage of the first transition metal oxide, the transition metal compound contains either oxygen and nitrogen or oxygen and fluorine, and the second transition metal oxide and the transition metal compound are in contact with the first variable resistance layer.
摘要翻译：非易失性存储元件包括位于下电极和上电极之间的可变电阻层，并且具有基于施加在这些电极之间的电信号而可逆地改变的电阻值。可变电阻层包括至少两层：包含第一过渡金属氧化物的第一可变电阻层; 以及包含第二过渡金属氧化物和过渡金属化合物的第二可变电阻层。第二过渡金属氧化物的氧含量原子百分比低于第一过渡金属氧化物的氧含量原子百分比，过渡金属化合物含有氧和氮或氧和氟，第二过渡金属氧化物和过渡金属化合物与第一可变电阻层接触。

16. 发明申请

US20130001504A1 NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储元件及其制造方法
公开(公告)号：US20130001504A1
公开(公告)日：2013-01-03
申请号：US13501624
申请日：2011-11-18
申请人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/1675
摘要： Provided is a nonvolatile memory element which inhibits deterioration of a oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element. A nonvolatile memory element (12) includes a first electrode layer (105) formed above a substrate (100), a variable resistance layer (106) disposed on the first electrode layer (105), and a second electrode layer (107) disposed on the variable resistance layer (106), and the variable resistance layer (106) has a two-layer structure in which a oxygen- and/or nitrogen-deficient tantalum oxynitride layer (106a) and a tantalum oxide layer (106b) are stacked.
摘要翻译：提供一种非易失性存储元件，其抑制由于热量预算而导致的可变电阻层的氧浓度分布的劣化，并能够稳定地在低电压下工作，以及非易失性存储元件的制造方法。非易失性存储元件（12）包括形成在基板（100）上方的第一电极层（105），设置在第一电极层（105）上的可变电阻层（106）和设置在第一电极层可变电阻层（106）和可变电阻层（106）具有堆叠氧和/或氮缺乏的氮氧化钽层（106a）和氧化钽层（106b）的双层结构。

17. 发明申请

US20120063201A1 NONVOLATILE MEMORY ELEMENT, PRODUCTION METHOD THEREFOR, DESIGN SUPPORT METHOD THEREFOR, AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储元件，其生产方法，其设计支持方法和非易失性存储器件
公开(公告)号：US20120063201A1
公开(公告)日：2012-03-15
申请号：US13320654
申请日：2011-03-16
申请人： Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
发明人： Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
IPC分类号： G11C11/00 , H01L21/8239 , G06F17/50 , H01L45/00
CPC分类号： G11C13/004 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A nonvolatile memory element which can be initialized at low voltage includes a variable resistance layer (116) located between a lower electrode (105) and an upper electrode (107) and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer (116) includes at least two layers: a first variable resistance layer (1161) including a first transition metal oxide (116b); and a second variable resistance layer (1162) including a second transition metal oxide (116a) and a third transition metal oxide (116c). The second transition metal oxide (116a) has an oxygen deficiency higher than either oxygen deficiency of the first transition metal oxide (116b) or the third transition metal oxide (116c), and the second transition metal oxide (116a) and the third transition metal oxide (116c) are in contact with the first variable resistance layer (1161).
摘要翻译：可以以低电压初始化的非易失性存储元件包括位于下电极（105）和上电极（107）之间的可变电阻层（116），并且具有基于施加在这些电极之间的电信号而可逆地改变的电阻值。可变电阻层（116）包括至少两层：包括第一过渡金属氧化物（116b）的第一可变电阻层（1161）; 和包括第二过渡金属氧化物（116a）和第三过渡金属氧化物（116c）的第二可变电阻层（1162）。第二过渡金属氧化物（116a）的缺氧高于第一过渡金属氧化物（116b）或第三过渡金属氧化物（116c）的氧缺乏，第二过渡金属氧化物（116a）和第三过渡金属氧化物（116c）与第一可变电阻层（1161）相接触。

18. 发明授权

US08618526B2 Nonvolatile memory device and manufacturing method thereof 有权
标题翻译：非易失存储器件及其制造方法
公开(公告)号：US08618526B2
公开(公告)日：2013-12-31
申请号：US13501228
申请日：2011-08-11
申请人： Haruyuki Sorada , Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
发明人： Haruyuki Sorada , Takeki Ninomiya , Takumi Mikawa , Yukio Hayakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1608 , H01L45/1675
摘要： Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element (108) having a stacked-layer structure in which a resistance variable layer (106) is parallel to a main surface of a substrate (117) and is planarized, and a plug (103) electrically connected to either a first electrode (105) or a second electrode (107), and an area of an end surface of a plug (103) at which the plug (103) and the nonvolatile memory element (108) are connected together, the end surface being parallel to the main surface of the substrate (117), is greater than a cross-sectional area of a cross-section of a first transition metal oxide layer (115) which is an electrically-conductive region, the cross-section being parallel to the main surface of the substrate (117).
摘要翻译：提供一种能够抑制非易失性存储元件之间的初始击穿电压的不均匀性并且防止产量降低的非易失性存储器件及其制造方法。非易失性存储器件包括具有堆叠层结构的非易失性存储元件（108），其中电阻变化层（106）平行于衬底（117）的主表面并被平坦化;以及电极（103）连接到第一电极（105）或第二电极（107），以及插头（103）的端面（103）的与插头（103）和非易失性存储元件（108）连接在一起的区域，平行于基板（117）的主表面的端面大于作为导电区域的第一过渡金属氧化物层（115）的截面的横截面积，横截面平行于基板（117）的主表面。

19. 发明授权

US08574957B2 Method for manufacturing nonvolatile semiconductor memory element 有权
标题翻译：制造非易失性半导体存储元件的方法
公开(公告)号：US08574957B2
公开(公告)日：2013-11-05
申请号：US13502769
申请日：2011-11-10
申请人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima
发明人： Takumi Mikawa , Yukio Hayakawa , Takeki Ninomiya , Yoshio Kawashima
IPC分类号： H01L21/00
CPC分类号： H01L27/101 , G11C13/0007 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： An object of the present invention is to provide a method for manufacturing a variable resistance nonvolatile semiconductor memory element which can operate at a low voltage and high speed when initial breakdown is caused, and inhibit oxidization of a contact plug. The method for manufacturing the variable resistance nonvolatile semiconductor memory element, which includes a bottom electrode, a variable resistance layer, and a top electrode which are formed above a contact plug, includes oxidizing to insulate an end portion of the variable resistance layer prior to forming a bottom electrode by patterning a first conductive film.
摘要翻译：本发明的目的是提供一种用于制造可变电阻非易失性半导体存储元件的方法，其可以在初始击穿时能够以低电压和高速工作，并且抑制接触插塞的氧化。制造可变电阻型非易失性半导体存储元件的方法，其包括形成在接触插塞上方的底电极，可变电阻层和顶电极，包括在形成之前进行氧化以使可变电阻层的端部绝缘通过图案化第一导电膜来形成底部电极。

20. 发明授权

US08437173B2 Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device 有权
标题翻译：非易失性存储元件，其制造方法，设计支持方法和非易失性存储器件
公开(公告)号：US08437173B2
公开(公告)日：2013-05-07
申请号：US13320654
申请日：2011-03-16
申请人： Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
发明人： Yukio Hayakawa , Takumi Mikawa , Yoshio Kawashima , Takeki Ninomiya
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0007 , G11C13/0069 , G11C2013/0083 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A nonvolatile memory element which can be initialized at low voltage includes a variable resistance layer (116) located between a lower electrode (105) and an upper electrode (107) and having a resistance value that reversibly changes based on electrical signals applied between these electrodes. The variable resistance layer (116) includes at least two layers: a first variable resistance layer (1161) including a first transition metal oxide (116b); and a second variable resistance layer (1162) including a second transition metal oxide (116a) and a third transition metal oxide (116c). The second transition metal oxide (116a) has an oxygen deficiency higher than either oxygen deficiency of the first transition metal oxide (116b) or the third transition metal oxide (116c), and the second transition metal oxide (116a) and the third transition metal oxide (116c) are in contact with the first variable resistance layer (1161).
摘要翻译：可以以低电压初始化的非易失性存储元件包括位于下电极（105）和上电极（107）之间的可变电阻层（116），并且具有基于施加在这些电极之间的电信号而可逆地改变的电阻值。可变电阻层（116）包括至少两层：包括第一过渡金属氧化物（116b）的第一可变电阻层（1161）; 和包括第二过渡金属氧化物（116a）和第三过渡金属氧化物（116c）的第二可变电阻层（1162）。第二过渡金属氧化物（116a）的缺氧高于第一过渡金属氧化物（116b）或第三过渡金属氧化物（116c）的氧缺乏，第二过渡金属氧化物（116a）和第三过渡金属氧化物（116c）与第一可变电阻层（1161）接触。

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