会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 20. 发明授权
    • Solar cell and method for manufacturing the same
    • 太阳能电池及其制造方法
    • US6023020A
    • 2000-02-08
    • US950204
    • 1997-10-14
    • Mikihiko NishitaniTakayuki NegamiNaoki KoharaTakahiro WadaYasuhiro Hashimoto
    • Mikihiko NishitaniTakayuki NegamiNaoki KoharaTakahiro WadaYasuhiro Hashimoto
    • H01L31/032H01L31/0336
    • H01L31/0749H01L31/0322Y02E10/541
    • A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
    • 提供了利用黄铜矿半导体并降低pn结的结界面上的缺陷密度的太阳能电池。 该太阳能电池包括基板,形成在基板上的背面电极,形成在背面电极上的p型黄铜矿半导体薄膜,形成为与p型黄铜矿形成pn结的n型半导体薄膜 半导体薄膜和形成在n型半导体薄膜上的透明电极。 在p型黄铜矿半导体薄膜和n型半导体薄膜之间形成具有比p型黄铜矿半导体更高的电阻率的材料。 由该材料制成的薄膜可以通过从溶液中沉积而形成。 例如,通过使半导体的表面与含有IIIb族元素的盐,含有VIb族元素的有机物质和酸混合的溶液与CuInSe 2的p型黄铜矿类半导体的表面形成CuInS 2, 。