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11. 发明申请

US20180348171A1 Acoustic Measurement of Fabrication Equipment Clearance 审中-公开
公开(公告)号：US20180348171A1
公开(公告)日：2018-12-06
申请号：US16047828
申请日：2018-07-27
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jun-Hao Deng , Kuan-Wen Lin , Sheng-Chi Chin , Yu-Ching Lee
IPC分类号： G01N29/44 , B08B13/00 , H01L21/02 , H01L21/66 , B08B3/04 , H01L21/67 , G01B17/00 , B08B5/02 , H01L21/288
CPC分类号： G01N29/44 , B08B3/04 , B08B5/02 , B08B13/00 , G01B17/00 , G01B21/16 , G01N2291/044 , H01L21/02041 , H01L21/02282 , H01L21/02623 , H01L21/288 , H01L21/67253 , H01L22/10
摘要： Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

12. 发明授权

US09885952B2 Systems and methods of EUV mask cleaning 有权
公开(公告)号：US09885952B2
公开(公告)日：2018-02-06
申请号：US14811919
申请日：2015-07-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Wei Shen , Chi-Lun Lu , Kuan-Wen Lin
IPC分类号： B08B3/12 , G03F1/82
CPC分类号： G03F1/82 , B08B3/12
摘要： A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.

13. 发明申请

US20170031241A1 Systems and Methods of EUV Mask Cleaning 有权
标题翻译： EUV面膜清洁系统和方法
公开(公告)号：US20170031241A1
公开(公告)日：2017-02-02
申请号：US14811919
申请日：2015-07-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Wei Shen , Chi-Lun Lu , Kuan-Wen Lin
IPC分类号： G03F1/82 , B08B3/12
CPC分类号： G03F1/82 , B08B3/12
摘要： A system includes a bracket that is configured to support a photomask and is located at a first side of the photomask; an acoustic energy generator configured to generate acoustic energy, wherein the acoustic energy includes mechanical vibrations of a megasonic frequency and wavelength; and a fluid dispenser coupled to the acoustic energy generator such that the acoustic energy generated by the acoustic energy generator is received by the fluid dispenser to generate an acoustically agitated fluid stream directed at a second side of the photomask, wherein the first side of the photomask is opposite a second side of the photomask, and wherein the first side includes a pattern.
摘要翻译：一种系统包括支架，其被配置为支撑光掩模并位于光掩模的第一侧; 声能发生器，其被配置为产生声能，其中所述声能包括兆声波频率和波长的机械振动; 以及流体分配器，其耦合到所述声能发生器，使得由所述声能发生器产生的声能被所述流体分配器接收以产生指向所述光掩模的第二侧的声学搅动的流体流，其中所述光掩模的第一侧与光掩模的第二侧相对，并且其中第一侧包括图案。

14. 发明申请

US20140051252A1 DEVICE MANUFACTURING AND CLEANING METHOD 审中-公开
标题翻译：装置制造和清洁方法
公开(公告)号：US20140051252A1
公开(公告)日：2014-02-20
申请号：US14066171
申请日：2013-10-29
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： H01L21/311
CPC分类号： H01L21/311 , G03F1/00 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02057
摘要： A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).
摘要翻译：公开了一种制造方法。一种示例性方法包括提供衬底并在衬底上形成一个或多个层。该方法还包括在一个或多个层上形成表面层。该方法还包括在表面层上进行图案化处理，从而在表面层上形成图案。该方法还包括使用清洁溶液进行清洁处理以清洁基板的顶表面。清洗溶液包括四甲基氢氧化铵（TMAH），过氧化氢（H 2 O 2）和水（H 2 O）。

15. 发明授权

US11709153B2 Acoustic measurement of fabrication equipment clearance 有权
公开(公告)号：US11709153B2
公开(公告)日：2023-07-25
申请号：US17102255
申请日：2020-11-23
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jun-Hao Deng , Kuan-Wen Lin , Sheng-Chi Chin , Yu-Ching Lee
IPC分类号： G01N29/44 , B08B13/00 , G01B17/00 , G01B21/16 , B08B3/04 , B08B5/02 , H01L21/02 , H01L21/288 , H01L21/67 , H01L21/66 , G01B17/02
CPC分类号： G01N29/44 , B08B3/04 , B08B5/02 , B08B13/00 , G01B17/00 , G01B17/02 , G01B17/025 , G01B21/16 , H01L21/02041 , H01L21/02282 , H01L21/02623 , H01L21/288 , H01L21/67253 , H01L22/10 , G01N2291/044
摘要： Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

16. 发明授权

US09658526B2 Mask pellicle indicator for haze prevention 有权
公开(公告)号：US09658526B2
公开(公告)日：2017-05-23
申请号：US14754902
申请日：2015-06-30
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuan-Wen Lin , Sheng-Chi Chin , Ting-Hao Hsu , Tzu-Ting Chou , Shu-Hsien Wu
IPC分类号： G03F1/62 , G03F1/64 , G03B27/62
CPC分类号： G03F1/64 , G03B27/62 , G03B27/6242 , G03B27/625 , G03F1/62
摘要： A pellicle mask assembly includes a mask, a pellicle frame, and a pellicle membrane. The pellicle frame has a bottom side attached to the mask, and a top side covered by the pellicle membrane. The pellicle frame includes a coating on its inner surface and the coating is configured to monitor a change of environment inside the pellicle mask assembly. In embodiments, the change of environment includes increased humidity and/or increased chemical ion density inside the pellicle mask assembly. Methods of making and using the pellicle mask assembly are also disclosed.

17. 发明申请

US20170138911A1 Acoustic Measurement of Fabrication Equipment Clearance 审中-公开
公开(公告)号：US20170138911A1
公开(公告)日：2017-05-18
申请号：US14942402
申请日：2015-11-16
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Jun-Hao Deng , Kuan-Wen Lin , Sheng-Chi Chin , Yu-Ching Lee
IPC分类号： G01N29/44 , H01L21/02 , B08B3/04 , H01L21/67 , B08B5/02 , H01L21/66 , H01L21/288
摘要： A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.

18. 发明申请

US20170052443A1 Damage Prevention on EUV Mask 有权
标题翻译：防毒面具防损
公开(公告)号：US20170052443A1
公开(公告)日：2017-02-23
申请号：US14832099
申请日：2015-08-21
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuan-Wen Lin , Chi-Lun Lu , Ching-Wei Shen , Shu-Hsien Wu
IPC分类号： G03F1/82 , G03F7/20 , B08B3/10 , B08B3/02 , B08B3/08
CPC分类号： G03F1/82 , B08B3/02 , B08B3/08 , B08B3/10 , C11D3/3947 , C11D7/08 , C11D7/10 , C11D7/265 , C11D7/34 , C11D11/0041 , C11D11/0047 , G03F7/2004
摘要： A method of cleaning a photomask is disclosed. The method includes mixing a first chemical solution with a second chemical solution; and discharging the mixed chemical solution through an outlet of a nozzle to a surface of the photomask on which includes a ruthenium (Ru) layer, wherein the first chemical solution is configured to dislodge contaminant particles from the surface of the photomask and the second chemical solution is configured to provide an electron to the first chemical solution.
摘要翻译：公开了一种清洁光掩模的方法。该方法包括：将第一化学溶液与第二化学溶液混合; 并且将混合的化学溶液通过喷嘴的出口排出到包括钌（Ru）层的光掩模的表面，其中第一化学溶液被配置为从光掩模的表面除去污染物颗粒和第二化学溶液被配置为向第一化学溶液提供电子。

19. 发明申请

US20150212419A1 Lithography System And Method For Haze Elimination 有权
标题翻译：平版印刷系统和雾化消除方法
公开(公告)号：US20150212419A1
公开(公告)日：2015-07-30
申请号：US14163287
申请日：2014-01-24
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ching-Wei Shen , Kuan-Wen Lin , Chi-Lun Lu , Ting-Hao Hsu , Sheng-Chi Chin , Anthony Yen
IPC分类号： G03F7/20 , H01L21/027 , H01L21/033
CPC分类号： H01L21/0274 , G03F1/48 , G03F1/62 , G03F7/70283 , G03F7/70916 , G03F7/7095
摘要： The present disclosure provides an apparatus in semiconductor manufacturing. The apparatus includes a mask, a pellicle frame attached to the mask, and a pellicle joined to the pellicle frame thereby forming a sealed enclosure bounded by the pellicle, the pellicle frame, and the mask. The apparatus further includes photo-catalyst particles introduced into the sealed enclosure before the sealed enclosure is formed. The photo-catalyst particles prevent haze formation within the enclosure during lithography exposure processes.
摘要翻译：本公开提供了半导体制造中的装置。该装置包括掩模，附着于掩模的防护薄膜组件框架和接合到防护薄膜框架上的防护薄膜组件，从而形成由防护薄膜组件，防护薄膜框架和掩模限定的密封外壳。该装置还包括在密封外壳形成之前引入到密封外壳中的光催化剂颗粒。在光刻曝光过程中，光催化剂颗粒防止外壳内的雾化形成。

20. 发明授权

US08932958B2 Device manufacturing and cleaning method 有权
标题翻译：设备制造和清洁方法
公开(公告)号：US08932958B2
公开(公告)日：2015-01-13
申请号：US14066171
申请日：2013-10-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi-Lun Lu , Kuan-Wen Lin , Ching-Wei Shen , Ting-Hao Hsu , Sheng-Chi Chin
IPC分类号： H01L21/311 , G03F1/00 , H01L21/02
CPC分类号： H01L21/311 , G03F1/00 , G03F7/42 , G03F7/423 , G03F7/425 , H01L21/02057
摘要： A method of manufacturing is disclosed. An exemplary method includes providing a substrate and forming one or more layers over the substrate. The method further includes forming a surface layer over the one or more layers. The method further includes performing a patterning process on the surface layer thereby forming a pattern on the surface layer. The method further includes performing a cleaning process using a cleaning solution to clean a top surface of the substrate. The cleaning solution includes tetra methyl ammonium hydroxide (TMAH), hydrogen peroxide (H2O2) and water (H2O).
摘要翻译：公开了一种制造方法。一种示例性方法包括提供衬底并在衬底上形成一个或多个层。该方法还包括在一个或多个层上形成表面层。该方法还包括在表面层上进行图案化处理，从而在表面层上形成图案。该方法还包括使用清洁溶液进行清洁处理以清洁基板的顶表面。清洗溶液包括四甲基氢氧化铵（TMAH），过氧化氢（H 2 O 2）和水（H 2 O）。

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