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11. 发明授权

US07052979B2 Production method for semiconductor crystal and semiconductor luminous element 有权
标题翻译：半导体晶体和半导体发光元件的制造方法
公开(公告)号：US07052979B2
公开(公告)日：2006-05-30
申请号：US10467566
申请日：2002-02-12
申请人： Seiji Nagai , Kazuyoshi Tomita , Shiro Yamazaki , Yuta Tezen , Toshio Hiramatsu
发明人： Seiji Nagai , Kazuyoshi Tomita , Shiro Yamazaki , Yuta Tezen , Toshio Hiramatsu
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/0066 , H01L33/007
摘要： When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.
摘要翻译：当在包括大量投影部分的基底基板上生长由III族氮化物化合物制成的衬底层（期望的半导体晶体）时，可以在每个突出部分之间形成其中不沉积半导体晶体的空腔，尽管它取决于条件如每个投影部分的尺寸，每个投影部分之间的间隔和晶体生长。因此，当基板层的厚度与突出部分的高度相比足够大时，内应力或外应力变得更容易集中于投影部分。结果，这种应力特别地作用于朝向投影部分的剪切应力。当剪切应力变大时，突出部分破裂。因此，利用剪切应力使得能够容易地分离基底和基底层。形成空穴越大，应力越倾向于集中到突出部分，从而能够更牢固地分离基底基底和基底层。

12. 发明授权

US06984536B2 Method for manufacturing a gallium nitride group compound semiconductor 失效
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US06984536B2
公开(公告)日：2006-01-10
申请号：US10052347
申请日：2002-01-23
申请人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
发明人： Katsuhide Manabe , Akira Mabuchi , Hisaki Kato , Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Masafumi Hashimoto , Isamu Akasaki
IPC分类号： H01L21/20
CPC分类号： H01L33/32 , H01L33/007 , H01L33/025
摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.
摘要翻译：本文公开了（1）使用氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，其中n层n 型氮化镓化合物半导体（Al x Ga 1-x N）是包括低载流子浓度的n层和n < 高载流子浓度的+层，前者与绝缘氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻， ; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，包括相对较低的含有p型杂质的低杂质浓度的i L层低浓度和高浓度的含有p型杂质的高杂质浓度的i H +层，前者与n层相邻; （3）具有上述两个特征的发光半导体器件和（4）制造n型氮化镓系化合物半导体层的方法（Al x Ga Ga 1-x N），通过气相外延从有机金属化合物具有受控的导电性，通过以可控混合比将含硅气体和其它原料气体一起供给到一起。

13. 发明授权

US5862167A Light-emitting semiconductor device using gallium nitride compound 失效
标题翻译：使用氮化镓化合物的发光半导体器件
公开(公告)号：US5862167A
公开(公告)日：1999-01-19
申请号：US863397
申请日：1997-05-27
申请人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
发明人： Michinari Sassa , Norikatsu Koide , Shiro Yamazaki , Junichi Umezaki , Naoki Shibata , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano
IPC分类号： H01L33/10 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/42 , H01L33/46 , H01S5/183 , H01S5/323 , H01S3/19
CPC分类号： H01L33/105 , H01L33/32 , H01S5/18375 , H01L33/405 , H01L33/465 , H01S5/0207 , H01S5/0213 , H01S5/32341
摘要： A light-emitting diode or laser diode is provided which uses a Group III nitride compound semiconductor satisfying the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y N, inclusive of 0.ltoreq.x.ltoreq.1, and 0.ltoreq.y.ltoreq.1. A double hetero-junction structure is provided which sandwiches an active layer between layers having wider band gaps than the active layer. The diode has a multi-layer structure which has either a reflecting layer to reflect emission light or a reflection inhibiting layer. The emission light of the diode exits the diode in a direction perpendicular to the double hetero-junction structure. Light emitted in a direction opposite to the light outlet is reflected by the reflecting film toward the direction of the light outlet. Further, the reflection inhibiting film, disposed at or near the light outlet, helps the release of exiting light by minimizing or preventing reflection. As a result, light can be efficiently emitted by the light-generating diode.
摘要翻译：提供一种发光二极管或激光二极管，其使用满足式（Al x Ga 1-x）y In 1-y N的III族氮化物化合物半导体，包括0≤x≤1，0≤y< = 1。提供了一种双异质结结构，其在活性层之间具有更宽带隙的层之间夹持有源层。二极管具有多层结构，其具有反射发射光的反射层或反射抑制层。二极管的发射光在垂直于双异质结结构的方向上离开二极管。在与光出口相反的方向上发射的光被反射膜反射到光出口的方向。此外，设置在光出口处或附近的反射抑制膜通过最小化或防止反射来帮助释放出射光。结果，光可以被发光二极管有效地发射。

14. 发明授权

US5129942A N-substituted-3-( (2,3-dimethylmaleimido)amino)-benzenesulfonamide derivatives, and herbicidal compositions 失效
标题翻译： N-取代的3-（（（2,3-二甲基亚氨基）氨基） - 苯磺酰胺衍生物和除草剂组合物
公开(公告)号：US5129942A
公开(公告)日：1992-07-14
申请号：US667617
申请日：1991-03-08
申请人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
发明人： Hideo Arabori , Shiro Yamazaki , Masato Arahira , Aiko Murakami
IPC分类号： A01N47/36 , C07D207/50 , C07D403/12 , C07D521/00
CPC分类号： C07D521/00 , A01N47/36 , C07D207/50 , C07D403/12
摘要： Disclosed herein are N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R is Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is Cl or C.sub.1 -C.sub.3 alkoxyl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-[(2,3-dimethylmaleimido)amino]benzenesulfonamide derivatives as active ingredients.

15. 发明授权

US4973353A 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide derivatives and herbicidal composition containing the same 失效
标题翻译： 1,5-二苯基-1H-1,2,4-三唑-3-甲酰胺衍生物和含有它们的除草组合物
公开(公告)号：US4973353A
公开(公告)日：1990-11-27
申请号：US162699
申请日：1988-03-01
申请人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Hideo Arabori , Takeo Watanabe , Yoshikazu Kubota , Isao Ichinose , Yoichi Kanda , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07C205/34 , C07C205/35 , C07C217/76 , C07D249/10
CPC分类号： C07C205/34 , A01N43/653 , C07C205/35 , C07C217/76 , C07D249/10
摘要： Disclosed herein is a derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I): ##STR1## wherein R is a straight-chain alkyl group having 1 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a branched alkyl group having 3 to 10 carbon atoms which is non-substituted or substituted with 1 to 19 fluorine atoms, a cyclic alkyl group having 3 to 10 carbon atoms, an alkyl group having 1 to 3 carbon atoms which is substituted with an alicyclic structure having 3 to 7 carbon atoms, a phenyl group or an aralkyl group having 7 to 9 carbon atoms; X.sup.1 is a halogen or an alkyl group having 1 to 3 carbon atoms; X.sup.2 is a hydrogen, a halogen or an alkyl group having 1 to 3 carbon atoms; Y.sup.1 is a hydrogen or a fluorine; and Y.sup.2 is a hydrogen or a fluorine, and the herbicidal compositions containing said derivatives as active ingredient therefor.The derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the formula (I) of the present invention is the compound having high herbicidal activity and also showing excellent selectivity for killing weeds alone without doing any serious harm to the crops such as rice, wheat and corn.

16. 发明授权

US4902805A Derivatives of dihydrotriazole, and herbicidal compositions containing the same as an active ingredient 失效
标题翻译：二氢三唑衍生物和含有其作为活性成分的除草组合物
公开(公告)号：US4902805A
公开(公告)日：1990-02-20
申请号：US820948
申请日：1986-01-21
申请人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
发明人： Takafumi Shida , Takeo Watanabe , Shiro Yamazaki , Hiroyasu Shinkawa , Keigo Satake
IPC分类号： A01N43/653 , C07D249/10 , C07D405/04
CPC分类号： C07D405/04 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of dihydrotriazole represented by the general formula (I): ##STR1## wherein R.sup.1 represents an amino group, lower alkoxy group, or lower alkyl amino group, R.sup.2 represents a hydrogen atom, halogen atom, or lower alkyl group and R.sup.3 represents a hydrogen atom, lower alkyl group, benzyl group, furyl group, phenyl group or phenyl group substituted with a halogen atom, hydroxyl group, carboxyl group, methoxycarbonyl group, lower alkyl group or lower alkoxy group, and a herbicidal composition containing as an active ingredient at least one of the derivatives of dihydrotriazole.
摘要翻译：本文公开了由通式（I）表示的二氢三唑衍生物：其中R 1表示氨基，低级烷氧基或低级烷基氨基，R 2表示氢原子，卤原子或低级烷基，R 3表示氢原子，低级烷基，苄基，呋喃基，苯基或被卤素原子，羟基，羧基，甲氧基羰基，低级烷基或低级烷氧基取代的苯基，除草组合物，其含有作为活性成分的二氢三唑衍生物中的至少一种。

17. 发明授权

US4897106A Derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide, and herbicidal composition containing the derivative 失效
标题翻译： 4,5-二氢-1H-1,2,4-三唑-3-甲酰胺的衍生物和含有该衍生物的除草组合物
公开(公告)号：US4897106A
公开(公告)日：1990-01-30
申请号：US42165
申请日：1987-04-24
申请人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
发明人： Takafumi Shida , Yoshikazu Kubota , Isao Ichinose , Shiro Yamazaki , Hiroyasu Shinkawa
IPC分类号： A01N43/653 , C07D249/10
CPC分类号： C07C251/72 , A01N43/653 , C07D249/10
摘要： Disclosed herein are a derivative of 4,5-dihydro-1H-1,2,4-triazole-3-carboxamide represented by the formula (Io): ##STR1## wherein R.sup.1 represents a hydrogen atom, a halogen atom, an alkyl group of 1 to 3 carbon atoms or an alkoxy group of 1 to 3 carbon atoms, R.sup.2 represents a hydrogen atom or a halogen atom and R represents a straight-chain alkyl group of 1 to 8 carbon atoms, a branched-chain alkyl group of 3 to 8 carbon atoms, a cycloalkyl group of 3 to 8 carbon atoms, a (cycloalkyl)alkyl group of 4 to 8 carbon atoms, an alkenyl group of 3 to 8 carbon atoms, an alkynyl group of 3 to 8 carbon atoms, an alkoxyalkyl group of 3 to 8 carbon atoms, a phenyl group, an aralkyl group of 7 to 9 carbon atoms, a phenyl group substituted by halogen atom(s) or an alkyl group of 2 to 8 carbon atoms which is substituted by fluorine atom(s), an intermediate for producing the derivative and a herbicidal composition containing the derivative as an active ingredient.

18. 发明授权

US09028611B2 Method for producing group III nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US09028611B2
公开(公告)日：2015-05-12
申请号：US12926995
申请日：2010-12-22
申请人： Shiro Yamazaki
发明人： Shiro Yamazaki
IPC分类号： C30B19/10 , C30B19/04 , C30B29/40 , C30B9/10 , C30B19/02 , C30B9/06
CPC分类号： C30B29/403 , C30B9/06 , C30B9/10 , C30B19/02 , C30B19/04 , C30B29/406
摘要： A method for producing a Group III nitride semiconductor includes reacting a molten mixture containing at least a Group III element and an alkali metal with a gas containing at least nitrogen, to thereby grow a Group III nitride semiconductor crystal on the seed crystal. The method includes forming a template substrate including a sapphire substrate and a first Group III nitride semiconductor layer as the seed crystal which is formed by vapor phase growth and which includes a c-plane as a main plane is employed, and the template substrate is placed and maintained in the molten mixture under conditions where crystal growth of the Group III nitride semiconductor is inhibited, to thereby partially melt back a plurality of separated parts of the first Group III nitride semiconductor layer to such a depth that the sapphire substrate is partially exposed.
摘要翻译：制备III族氮化物半导体的方法包括使至少含有III族元素和碱金属的熔融混合物与至少含有氮的气体反应，从而在晶种上生长III族氮化物半导体晶体。该方法包括形成包含蓝宝石衬底和第一III族氮化物半导体层的模板衬底，作为通过气相生长形成并且包括c面作为主平面的晶种，并且将模板衬底放置并且在III族氮化物半导体的晶体生长被抑制的条件下保持在熔融混合物中，从而部分地将第一III族氮化物半导体层的多个分离部分熔融回到蓝宝石衬底部分暴露的深度。

19. 发明授权

US08123856B2 Method and apparatus for producing group III nitride based compound semiconductor 有权
标题翻译：制备III族氮化物基化合物半导体的方法和装置
公开(公告)号：US08123856B2
公开(公告)日：2012-02-28
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。提供本发明的装置用于制造III族氮化物基化合物半导体。该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于将从外部容器外部至少含有氮气的气体进料到反应器中。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

20. 发明申请

US20100301358A1 Semiconductor Substrate, Electronic Device, Optical Device, and Production Methods Therefor 有权
标题翻译：半导体基板，电子器件，光学器件及其制造方法
公开(公告)号：US20100301358A1
公开(公告)日：2010-12-02
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L29/20 , C30B9/12 , H01L29/772 , H01L33/30 , H01L31/0304 , H01L21/20
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

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