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11. 发明授权

US06602560B2 Method for removing residual fluorine in HDP-CVD chamber 有权
标题翻译：在HDP-CVD室中除去残余氟的方法
公开(公告)号：US06602560B2
公开(公告)日：2003-08-05
申请号：US10196850
申请日：2002-07-16
申请人： Yi-Lung Cheng , Wen-Kung Cheng , Ming-Hwa Yoo , Szu-An Wu , Ying-Long Wang , Pei-Fen Chou
发明人： Yi-Lung Cheng , Wen-Kung Cheng , Ming-Hwa Yoo , Szu-An Wu , Ying-Long Wang , Pei-Fen Chou
IPC分类号： C23C1640
CPC分类号： C23C16/4405 , B08B7/0035
摘要： A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.
摘要翻译：一种除去存在于HDP-CVD室中的残余氟的方法，其包括高压调味处理，干洗处理和低压沉积工艺。

12. 发明授权

US07772625B2 Image sensor having an RPO layer containing nitrogen 有权
标题翻译：具有含有氮的RPO层的图像传感器
公开(公告)号：US07772625B2
公开(公告)日：2010-08-10
申请号：US11548189
申请日：2006-10-10
申请人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
发明人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
IPC分类号： H01L31/09
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
摘要翻译：半导体结构包括形成在衬底上的晶体管。晶体管包括晶体管栅极和至少一个源极/漏极区域。半导体结构包括耦合到晶体管的预定区域。半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

13. 发明授权

US06235653B1 Ar-based si-rich oxynitride film for dual damascene and/or contact etch stop layer 有权
标题翻译：用于双镶嵌和/或接触蚀刻停止层的基于Ar的富Si氧氮化物膜
公开(公告)号：US06235653B1
公开(公告)日：2001-05-22
申请号：US09324924
申请日：1999-06-04
申请人： Hung-Ju Chien , Yuan-Hung Chiu , Wen-Kung Cheng , Yin-Lang Wang
发明人： Hung-Ju Chien , Yuan-Hung Chiu , Wen-Kung Cheng , Yin-Lang Wang
IPC分类号： H01L2131
CPC分类号： H01L21/76829 , H01L21/3145 , H01L21/76807
摘要： A new method of forming a plasma-enhanced silicon-rich oxynitride layer having improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity by using argon as the inert carrier gas is described. A semiconductor substrate is provided which may include semiconductor device structures. An Argon-based silicon-rich oxynitride etch stop layer is deposited overlying the semiconductor substrate. An oxide layer is deposited overlying the Argon-based silicon-rich oxynitride etch stop layer. An opening is etched through the oxide layer stopping at the Argon-based silicon-rich oxynitride etch stop layer. Thereafter, the Argon-based silicon-rich oxynitride etch stop layer within the opening is removed. The opening is filled with a conducting layer. This Argon-based silicon-rich oxynitride layer has improved uniformity across the wafer in terms of layer thickness, refractivity, and reflectivity as compared with a helium-based silicon-rich oxynitride layer.
摘要翻译：描述了通过使用氩作为惰性载气，在层厚度，折射率和反射率方面形成了具有改善的晶片均匀性的等离子体增强的富硅氧氮化物层的新方法。提供一种可包括半导体器件结构的半导体衬底。沉积在半导体衬底上的基于氩的富硅氧氮化物蚀刻停止层。覆盖基于氩的富硅氧氮化物蚀刻停止层上的氧化物层。蚀刻通过在氩基富硅氧氮化物蚀刻停止层处停止的氧化物层的开口。此后，除去开口内的基于氩的富硅氧氮化物蚀刻停止层。开口填充有导电层。与基于氦的富硅氧氮化物层相比，这种基于氩的富硅氧氮化物层在层厚度，折射率和反射率方面具有改善整个晶片的均匀性。

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