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1. 发明申请

US20080083938A1 IMAGE SENSORS AND METHODS OF FABRICATING IMAGE SENSORS 有权
标题翻译：图像传感器和图像传感器的制作方法
公开(公告)号：US20080083938A1
公开(公告)日：2008-04-10
申请号：US11548189
申请日：2006-10-10
申请人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
发明人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
IPC分类号： H01L31/06 , H01L21/00
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
摘要翻译：半导体结构包括形成在衬底上的晶体管。晶体管包括晶体管栅极和至少一个源极/漏极区域。半导体结构包括耦合到晶体管的预定区域。半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

2. 发明授权

US07772625B2 Image sensor having an RPO layer containing nitrogen 有权
标题翻译：具有含有氮的RPO层的图像传感器
公开(公告)号：US07772625B2
公开(公告)日：2010-08-10
申请号：US11548189
申请日：2006-10-10
申请人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
发明人： Yao Hsiang Liang , Wen-Kung Cheng , Chen-Peng Fan , Ming-Hsien Chen , Richard Chen , Jung-Chen Yang , Wen-Yu Ho , Chao-Keng Li , Yong-Sin Chang , Labo Chang
IPC分类号： H01L31/09
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
摘要翻译：半导体结构包括形成在衬底上的晶体管。晶体管包括晶体管栅极和至少一个源极/漏极区域。半导体结构包括耦合到晶体管的预定区域。半导体结构还包括形成在预定区域上的抗蚀剂保护氧化物（RPO）层，其中RPO层具有约0.35原子％或更低的氮含量。

3. 发明授权

US06561744B2 Wafer blade for wafer pick-up from a water tank and method for using 有权
公开(公告)号：US06561744B2
公开(公告)日：2003-05-13
申请号：US09927617
申请日：2001-08-10
申请人： Yao Hsiang Liang
发明人： Yao Hsiang Liang
IPC分类号： B65G4907
CPC分类号： H01L21/6838 , Y10S414/141
摘要： A wafer blade for picking up wafers immersed in a wafer tank and a method for using the wafer blade are described. The wafer blade is constructed by a blade body of generally elongated rectangular shape that has a wafer pick-up side and a backside. The wafer pick-up side of the blade body has a recessed vacuum port for contacting a wafer with a vacuum passageway in the blade body connected to an external vacuum source. The backside of the blade body has at least two recessed slots that are open to an edge of the blade body, wherein each has a width of at least 5 mm and a length of at least 5 cm for providing ventilation and preventing the backside of the blade body from sticking to a wafer by capillary reaction caused by water entrapped in between the wafer and the backside of the blade body.

4. 发明授权

US08673765B2 Method and apparatus for back end of line semiconductor device processing 有权
标题翻译：线路半导体器件处理后端的方法和装置
公开(公告)号：US08673765B2
公开(公告)日：2014-03-18
申请号：US13486006
申请日：2012-06-01
申请人： Hung-Chih Wang , Wei-Rong Chen , Yao Hsiang Liang , Chen-Kuang Lien
发明人： Hung-Chih Wang , Wei-Rong Chen , Yao Hsiang Liang , Chen-Kuang Lien
IPC分类号： H01L21/4763
CPC分类号： H01L21/76802 , H01L21/0276 , H01L21/31144
摘要： Methods and apparatus are disclosed for the back end of line process for fabrication of integrated circuits (ICs). The inter-metal dielectric (IMD) layer between two metal layers may comprise an etching stop layer over a metal layer, a low-k dielectric layer over the etching stop layer, a dielectric hard mask layer over the low-k dielectric layer, an nitrogen free anti-reflection layer (NFARL) over the dielectric hard mask layer, and a metal-hard-mask (MHM) layer of a thickness in a range from about 180 Å to about 360 Å over the NFARL. The MHM layer thickness is optimized at the range from about 180 Å to about 360 Å to reduce the Cu pits while avoiding the photo overlay shifting issue.
摘要翻译：公开了用于制造集成电路（IC）的线路工艺的后端的方法和装置。两个金属层之间的金属间电介质（IMD）层可以包括金属层上的蚀刻停止层，蚀刻停止层上的低k电介质层，低k电介质层上的电介质硬掩模层，通过NFARL，在介电硬掩模层上的无氮抗反射层（NFARL）和厚度约为180至约360埃的金属 - 硬掩模（MHM）层。 MHM层厚度在约180埃至约360埃的范围内被优化，以减少Cu坑，同时避免了照片重叠移位问题。

5. 发明授权

US08742540B2 Insulation layer to improve capacitor breakdown voltage 有权
标题翻译：绝缘层提高电容器击穿电压
公开(公告)号：US08742540B2
公开(公告)日：2014-06-03
申请号：US11216715
申请日：2005-08-31
申请人： Yao Hsiang Liang
发明人： Yao Hsiang Liang
IPC分类号： H01L21/02
CPC分类号： H01L28/40 , H01L28/60
摘要： A metal-insulator-metal (MIM) capacitor and a method for forming the same are provided. The MIM capacitor includes an insulator on a bottom metal plate, a top metal plate on the insulator, a dielectric layer on the top metal plate and on at least sidewalls of the top metal plate and the insulator, and an anti-reflective coating (ARC) layer over the top metal plate and the bottom metal plate. The dielectric layer preferably extends on an exposed portion of the bottom metal plate not covered by the top metal plate and the insulator.
摘要翻译：提供金属 - 绝缘体 - 金属（MIM）电容器及其形成方法。 MIM电容器包括在底部金属板上的绝缘体，绝缘体上的顶部金属板，顶部金属板上的介电层，以及顶部金属板和绝缘体的至少侧壁，以及抗反射涂层（ARC ）层在顶部金属板和底部金属板上。电介质层优选在未被顶部金属板和绝缘体覆盖的底部金属板的暴露部分上延伸。

6. 发明申请

US20130320539A1 Method and Apparatus for Back End of Line Semiconductor Device Processing 有权
标题翻译：线路半导体器件加工方法与装置
公开(公告)号：US20130320539A1
公开(公告)日：2013-12-05
申请号：US13486006
申请日：2012-06-01
申请人： Hung-Chih Wang , Wei-Rong Chen , Yao Hsiang Liang , Chen-Kuang Lien
发明人： Hung-Chih Wang , Wei-Rong Chen , Yao Hsiang Liang , Chen-Kuang Lien
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/0276 , H01L21/31144
摘要： Methods and apparatus are disclosed for the back end of line process for fabrication of integrated circuits (ICs). The inter-metal dielectric (IMD) layer between two metal layers may comprise an etching stop layer over a metal layer, a low-k dielectric layer over the etching stop layer, a dielectric hard mask layer over the low-k dielectric layer, an nitrogen free anti-reflection layer (NFARL) over the dielectric hard mask layer, and a metal-hard-mask (MHM) layer of a thickness in a range from about 180 Å to about 360 Å over the NFARL. The MHM layer thickness is optimized at the range from about 180 Å to about 360 Å to reduce the Cu pits while avoiding the photo overlay shifting issue.
摘要翻译：公开了用于制造集成电路（IC）的线路工艺的后端的方法和装置。两个金属层之间的金属间电介质（IMD）层可以包括金属层上的蚀刻停止层，蚀刻停止层上的低k电介质层，低k电介质层上的电介质硬掩模层，通过NFARL，在介电硬掩模层上的无氮抗反射层（NFARL）和厚度约为180至约360埃的金属 - 硬掩模（MHM）层。 MHM层厚度在约180埃至约360埃的范围内被优化，以减少Cu坑，同时避免了照片重叠移位问题。

7. 发明授权

US06783441B2 Apparatus and method for transferring a torque from a rotating hub frame to a one-piece hub shaft 失效
标题翻译：用于将扭矩从旋转轮毂框架转移到一体式轮毂轴的装置和方法
公开(公告)号：US06783441B2
公开(公告)日：2004-08-31
申请号：US09928057
申请日：2001-08-10
申请人： Yao Hsiang Liang , Wen-Ten Chan
发明人： Yao Hsiang Liang , Wen-Ten Chan
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24B37/042 , B24B41/04
摘要： An apparatus and a method for transferring a rotational torque from a hub frame to a one-piece hub shaft onto which a pad conditioning disc is attached are described. The apparatus is a one-piece hub shaft for mounting into a hub-frame. To provide a great improvement over the conventional design wherein a hub spacer is mounted to a hub shaft by screw means, the present invention conditioning head is assembled together by frictionally engaging a key and a flat surface on the hub shaft to a slot opening on the hub frame such that any catastrophic failure due to a screw breakage can be avoided. The present invention novel frictional engagement further provides a more uniform torque transfer between the two components.
摘要翻译：描述了一种用于将旋转扭矩从轮毂框架转移到连接有垫片调节盘的单件轮毂轴的装置和方法。该装置是用于安装到轮毂架中的一体式轮毂轴。为了提供比通过螺钉装置将轮毂间隔件安装到轮毂轴的传统设计更大的改进，本发明的调节头通过将轮毂轴上的钥匙和平坦表面摩擦接合到所述轮毂轴上的槽口而组装在一起轮毂框架，从而可以避免由于螺钉破损而导致的任何灾难性故障。本发明的新颖的摩擦接合进一步提供了两个部件之间更均匀的转矩传递。

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