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11. 发明授权

US07799300B2 Method and apparatus for removing substances from gases 有权
标题翻译：从气体中去除物质的方法和设备
公开(公告)号：US07799300B2
公开(公告)日：2010-09-21
申请号：US12138358
申请日：2008-06-12
申请人： Sven Lindfors , Jaako Hyvarinen
发明人： Sven Lindfors , Jaako Hyvarinen
IPC分类号： B01D53/56
CPC分类号： B01D53/34
摘要： The present invention concerns a method and an apparatus for removing substances from gases discharged from gas phase reactors. In particular, the invention provides a method for removing substances contained in gases discharged from an ALD reaction process, comprising contacting the gases with a “sacrificial” material having a high surface area kept at essentially the same conditions as those prevailing during the gas phase reaction process. The sacrificial material is thus subjected to surface reactions with the substances contained in the gases to form a reaction product on the surface of the sacrificial material and to remove the substances from the gases. The present invention diminishes the amount of waste produced in the gas phase process and reduces wear on the equipment.
摘要翻译：本发明涉及从气相反应器排出的气体中去除物质的方法和装置。特别地，本发明提供了一种用于除去从ALD反应过程排出的气体中所含的物质的方法，包括使气体与具有高表面积的“牺牲”材料接触，所述“牺牲”材料保持在与气相反应期间基本相同的条件处理。因此牺牲材料与包含在气体中的物质进行表面反应，以在牺牲材料的表面上形成反应产物，并从气体中除去物质。本发明减少了在气相工艺中产生的废物的量并减少了设备上的磨损。

12. 发明申请

US20090297710A1 Methods and apparatus for deposition reactors 有权
标题翻译：沉积反应器的方法和装置
公开(公告)号：US20090297710A1
公开(公告)日：2009-12-03
申请号：US12154879
申请日：2008-05-27
申请人： Sven Lindfors
发明人： Sven Lindfors
IPC分类号： C23C16/00
CPC分类号： C23C16/403 , C23C16/45504 , C23C16/45546 , C30B25/165 , C30B29/20
摘要： The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.
摘要翻译：本发明涉及其中前体蒸气沿着至少一个进料管线被引导到沉积反应器的反应室中的方法和设备，并且通过建立垂直的前体流将材料沉积在一批垂直放置的基底的表面上蒸气在反应室中并使其在竖直放置的基板之间沿垂直方向进入。

13. 发明授权

US07404984B2 Method for growing thin films 失效
标题翻译：生长薄膜的方法
公开(公告)号：US07404984B2
公开(公告)日：2008-07-29
申请号：US09855321
申请日：2001-05-14
申请人： Tuomo Suntola , Sven Lindfors
发明人： Tuomo Suntola , Sven Lindfors
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C23C16/455 , C23C16/45527 , C23C16/45546 , C30B25/10 , C30B25/14
摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.
摘要翻译：本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成一个薄膜。根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应的基板，用于在所述基板上形成固态薄膜化合物。根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

14. 发明申请

US20080138518A1 METHOD FOR GROWING THIN FILMS 失效
标题翻译：生长薄膜的方法
公开(公告)号：US20080138518A1
公开(公告)日：2008-06-12
申请号：US11949688
申请日：2007-12-03
申请人： Tuomo Suntola , Sven Lindfors
发明人： Tuomo Suntola , Sven Lindfors
IPC分类号： C23C16/06 , C23C16/448
CPC分类号： C23C16/45525 , C23C16/455 , C23C16/45527 , C23C16/45546 , C30B25/10 , C30B25/14
摘要： The invention relates to a method and apparatus for growing a thin film onto a substrate, in which method a substrate placed in a reaction space (21) is subjected to alternately repeated surface reactions of at least two vapor-phase reactants for the purpose of forming a thin film. According to the method, said reactants are fed in the form of vapor-phase pulses repeatedly and alternately, each reactant separately from its own source, into said reaction space (21), and said vapor-phase reactants are brought to react with the surface of the substrate for the purpose of forming a solid-state thin film compound on said substrate. According to the invention, the gas volume of said reaction space is evacuated by means of a vacuum pump essentially totally between two successive vapor-phase reactant pulses. By virtue of transporting the different starting material species at different times through the apparatus effectively isolates the starting materials from each other thus preventing their premature mutual reactions.
摘要翻译：本发明涉及一种用于将薄膜生长到基底上的方法和装置，其中放置在反应空间（21）中的基底经受至少两种气相反应物的交替重复的表面反应，以形成一个薄膜。根据该方法，所述反应物以气相脉冲的形式反复地且交替地以每种反应物与其自身源分开进入所述反应空间（21），并使所述气相反应物与表面反应的基板，用于在所述基板上形成固态薄膜化合物。根据本发明，通过基本上完全在两个连续的气相反应物脉冲之间的真空泵将所述反应空间的气体体积抽真空。由于通过装置在不同时间运送不同的起始物质，有效地将原料彼此隔离，从而防止其过早的相互反应。

15. 发明授权

US07105054B2 Method and apparatus of growing a thin film onto a substrate 有权
公开(公告)号：US07105054B2
公开(公告)日：2006-09-12
申请号：US09836674
申请日：2001-04-16
申请人： Sven Lindfors
发明人： Sven Lindfors
IPC分类号： C30B25/00 , C30B25/08
CPC分类号： C30B25/14 , C23C16/405 , C23C16/45502 , C23C16/45527 , C23C16/45546 , C30B25/02 , C30B25/08
摘要： A method and an apparatus for growing a thin film onto a substrate by the ALD process. The apparatus comprises a reaction chamber into which the substrate can be disposed; a plurality of inlet channels communicating with said reaction chamber, said inlet channels being suited for feeding the reactants employed in a thin-film growth process in the form of vapor-phase pulses into said reaction chamber; at least one outlet channel communicating with said reaction chamber, said outlet channel being suited for the outflow of reaction products and excess amounts of reactants from said reaction space; and a pre-reaction chamber arranged immediately upstream of the reaction chamber, said pre-reaction chamber forming a first reaction zone, in which the reactants of successive vapor-phase pulses can be reacted with each other in the vapor phase to form a solid product, whereas said reaction chamber forming a second reaction zone can be operated under conditions conducive to ALD growth of a thin film.

16. 发明申请

US20060196418A1 Apparatuses and methods for deposition of material on surfaces 有权
标题翻译：在表面上沉积材料的装置和方法
公开(公告)号：US20060196418A1
公开(公告)日：2006-09-07
申请号：US11073052
申请日：2005-03-04
申请人： Sven Lindfors , Juha Allan Poutiainen
发明人： Sven Lindfors , Juha Allan Poutiainen
IPC分类号： C23C16/00
CPC分类号： C23C16/45546 , C23C16/45525 , C23C16/45578 , C23C16/4583 , C23C16/52
摘要： An apparatus for depositing conformal thin films by sequential self saturating chemical reactions on heated surfaces is disclosed. The apparatus comprises a movable single or dual-lid system that has a substrate holder attached to a reaction chamber lid. In other embodiments, the apparatus comprises an exhaust flow plug, a gas distribution insert, a local heater or a minibatch system. Various methods suitable for ALD (Atomic Layer Deposition) are also enclosed.
摘要翻译：公开了一种用于通过在加热表面上的顺序自饱和化学反应沉积保形薄膜的装置。该装置包括可移动单盖或双盖系统，其具有附接到反应室盖的基板保持架。在其他实施例中，该装置包括排气流塞，气体分配插入件，局部加热器或小型系统。还包括适用于ALD（原子层沉积）的各种方法。

17. 发明授权

US07037372B2 Method of growing a thin film onto a substrate 有权
公开(公告)号：US07037372B2
公开(公告)日：2006-05-02
申请号：US10975578
申请日：2004-10-28
申请人： Sven Lindfors , Pekka T. Soininen
发明人： Sven Lindfors , Pekka T. Soininen
IPC分类号： C30B25/12
CPC分类号： C23C16/45525 , C23C16/45544 , C30B25/14
摘要： The present invention relates to the production of thin films. In particular, the invention concerns a method of growing a thin film onto a substrate, in which method the substrate is placed in a reaction chamber and is subjected to surface reactions of a plurality of vapor-phase reactants according to the ALD method. The present invention is based on replacing the mechanical valves conventionally used for regulating the pulsing of the reactants, which valves tend to wear and intrude metallic particles into the process flow, with an improved precursor dosing system. The invention is characterized by choking the reactant flow between the vapour-phase pulses while still allowing a minimum flow of said reactant, and redirecting the reactant at these times to an other destination than the reaction chamber. The redirection is performed with an inactive gas, which is also used for ventilating the reaction chamber between the vapour-phase pulses.

18. 发明授权

US10041169B2 System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor 有权
公开(公告)号：US10041169B2
公开(公告)日：2018-08-07
申请号：US12154879
申请日：2008-05-27
申请人： Sven Lindfors
发明人： Sven Lindfors
IPC分类号： C30B25/12 , C23C16/40 , C23C16/455 , C30B25/16 , C30B29/20
CPC分类号： C23C16/403 , C23C16/45504 , C23C16/45546 , C30B25/165 , C30B29/20
摘要： The invention relates to methods and apparatus in which precursor vapor is guided along at least one in-feed line into a reaction chamber of a deposition reactor, and material is deposited on surfaces of a batch of vertically placed substrates by establishing a vertical flow of precursor vapor in the reaction chamber and having it enter in a vertical direction in between said vertically placed substrates.

19. 发明授权

US09095869B2 Atomic layer deposition with plasma source 有权
标题翻译：原子层沉积与等离子体源
公开(公告)号：US09095869B2
公开(公告)日：2015-08-04
申请号：US14009647
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： H01L21/31 , B05C5/00 , C23C16/40 , C23C16/455 , H01L21/02 , H01J37/32
CPC分类号： B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
摘要： The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基，基本上在整个沉积循环期间向反应室开口的进料部分开口。本发明还涉及相应的装置。

20. 发明申请

US20150167165A1 COATING A SUBSTRATE WEB BY ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：通过原子层沉积涂覆基板
公开(公告)号：US20150167165A1
公开(公告)日：2015-06-18
申请号：US14407955
申请日：2012-06-15
申请人： Sven Lindfors
发明人： Sven Lindfors
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/403 , C23C16/54 , C23C16/545
摘要： The present invention relates to a method of driving a substrate web (950) into a reaction space of an atomic layer deposition (ALD) reactor and apparatuses therefore. The invention includes driving a substrate web into a reaction space (930) of an atomic layer deposition reactor, and exposing the reaction space to precursor pulses to deposit material on said substrate web by sequential self-saturating surface reactions. One effect of the invention is a simpler structure compared to earlier spatial roll-to-roll ALD reactors. Another effect is that the thickness of deposited material is directly determined by the speed of the web.
摘要翻译：本发明涉及一种将衬底腹板（950）驱动到原子层沉积（ALD）反应器的反应空间中的方法及装置。本发明包括将基材网驱动到原子层沉积反应器的反应空间（930）中，并将反应空间暴露于前驱物脉冲，以通过顺序的自饱和表面反应将材料沉积在所述基材网上。与早期空间卷对卷ALD反应器相比，本发明的一个效果是更简单的结构。另一个效果是沉积材料的厚度直接由网的速度确定。

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