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11. 发明申请

US20120068058A1 Apparatus and Method for Processing Substrate Using Neutralized Beams Including Applying a Voltage to a Substrate Support 有权
标题翻译：使用包括对基板支撑施加电压的中和束来处理基板的装置和方法
公开(公告)号：US20120068058A1
公开(公告)日：2012-03-22
申请号：US13306364
申请日：2011-11-29
申请人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
发明人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
IPC分类号： H05H3/02
CPC分类号： H01J37/30 , H01J2237/0041 , H01J2237/04756 , H01J2237/20 , H01J2237/31
摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
摘要翻译：提供了一种使用中和束来处理衬底的设备和方法。衬底处理装置包括被配置为形成离子源的离子源生成装置。离子提取装置被配置为从离子源提取和加速离子。离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

12. 发明申请

US20060213443A1 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same 有权
标题翻译：使用中性光束的原子层沉积设备和使用其沉积原子层的方法
公开(公告)号：US20060213443A1
公开(公告)日：2006-09-28
申请号：US11348471
申请日：2006-02-07
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/00 , B29C71/04
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

13. 发明授权

US08089042B2 Apparatus and method for processing substrate using neutralized beams including applying a voltage to a substrate support 有权
标题翻译：用于使用中和束处理衬底的装置和方法，包括向衬底支撑件施加电压
公开(公告)号：US08089042B2
公开(公告)日：2012-01-03
申请号：US12323783
申请日：2008-11-26
申请人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
发明人： Do-Haing Lee , Ha-Na Kim , Yong-Jin Kim
IPC分类号： H05H3/02
CPC分类号： H01J37/30 , H01J2237/0041 , H01J2237/04756 , H01J2237/20 , H01J2237/31
摘要： An apparatus and method for processing a substrate using neutralized beams are provided. A substrate processing apparatus includes an ion source generating device configured to form an ion source. An ion extraction device is configured to extract and accelerate ions from the ion source. An ion neutralizing device is configured to convert the ions extracted and accelerated from the ion extraction device into neutralized beams. A remaining portion of the ions extracted and accelerated from the ion extraction device is not converted into the neutralized beams. A substrate support is configured to support a substrate such that the neutralized beams are directed towards the substrate support. A substrate power supply is configured to apply a voltage to the substrate support such that the remaining portion of the ions that is not converted into the neutralized beams is directed away from the substrate support by the applied voltage of the substrate.
摘要翻译：提供了一种使用中和束来处理衬底的设备和方法。衬底处理装置包括被配置为形成离子源的离子源生成装置。离子提取装置被配置为从离子源提取和加速离子。离子中和装置被配置为将从离子提取装置提取和加速的离子转化成中和的束。从离子提取装置提取和加速的离子的剩余部分不被转换成中和的束。衬底支撑件被配置为支撑衬底，使得中和的光束被引向衬底支撑件。衬底电源被配置为向衬底支撑件施加电压，使得未转换成中和束的离子的剩余部分通过衬底的施加电压被引导离开衬底支撑。

14. 发明申请

US20110162581A1 ATOMIC LAYER DEPOSITION APPARATUS USING NEUTRAL BEAM AND METHOD OF DEPOSITING ATOMIC LAYER USING THE SAME 审中-公开
标题翻译：使用中性光束的原子层沉积装置和使用其沉积原子层的方法
公开(公告)号：US20110162581A1
公开(公告)日：2011-07-07
申请号：US13050507
申请日：2011-03-17
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/48 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

15. 发明授权

US07919142B2 Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same 有权
标题翻译：使用中性光束的原子层沉积设备和使用其沉积原子层的方法
公开(公告)号：US07919142B2
公开(公告)日：2011-04-05
申请号：US11348471
申请日：2006-02-07
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park , Kyeong-Joon Ahn
IPC分类号： C23C16/00 , C23C14/28 , C23C14/30 , H05B6/00 , H05B7/00
CPC分类号： C23C16/45536 , C23C16/452 , C23C16/4551 , C23C16/45544
摘要： Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.
摘要翻译：公开了使用中性光束的原子层沉积设备和使用该设备沉积原子层的方法，其能够将离子束转换成中性光束并将其辐射到待处理的衬底上。该方法使用一种装置，用于将含有不能被化学吸附的材料的第一反应气体提供到待处理的基材上，并将其加载到其中装载基材的反应室中，以及形成含有不能被化学吸附的材料的第一反应物吸附层基材; 并且将由所述第二反应气体产生的中性束辐射到形成有所述第一反应物吸附层的基板上，并从所述第一反应物吸附层除去未化学吸附到所述基板上的材料，以形成第二反应物吸附层。可以通过使用中性光束对用于沉积原子层的装置进行充电而进行无损伤的处理以及使用该装置沉积原子层的方法。

16. 发明授权

US06933495B1 3-grid neutral beam source used for etching semiconductor device 失效
标题翻译：用于蚀刻半导体器件的3栅极中性束源
公开(公告)号：US06933495B1
公开(公告)日：2005-08-23
申请号：US10814148
申请日：2004-04-01
申请人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
发明人： Geun-Young Yeom , Do-Haing Lee , Byoung-Jae Park
IPC分类号： H01L21/3065 , H05H3/02
CPC分类号： H05H3/02
摘要： Disclosed is a 3-grid neutral beam source used for etching a semiconductor device. The 3-grid neutral beam source includes a plasma generating chamber, a grid assembly including first to third grids, which are sequentially overlapped with each other by interposing an insulation material therebetween for obtaining a great amount of ion flux at a low ion energy, and a reflective member for converting an ion beam into a neutral beam by reflecting the ion beam. The semiconductor device is prevented from being damaged due to reduced kinetic energy of ions, and an etch rate of the semiconductor device is improved.
摘要翻译：公开了一种用于蚀刻半导体器件的3栅极中性束源。三栅中性束源包括等离子体发生室，包括第一至第三栅极的栅格组件，其通过在其间插入绝缘材料而相互重叠，以在低离子能量下获得大量的离子通量，以及用于通过反射离子束将离子束转换成中立光束的反射构件。防止半导体器件由于离子的动能降低而被损坏，并且提高了半导体器件的蚀刻速率。

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