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11. 发明授权

US06210979B1 Method for fabricating ferroelectric capacitor improving adhesive strength between upper electrode and capping layer without polymer in FRAM device 有权
标题翻译：制造铁电电容器的方法，改善FRAM装置中上层电极和无聚合物覆盖层之间的粘合强度
公开(公告)号：US06210979B1
公开(公告)日：2001-04-03
申请号：US09474968
申请日：1999-12-29
申请人： Soon-Yong Kweon , Seung-Jin Yeom
发明人： Soon-Yong Kweon , Seung-Jin Yeom
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/10814 , H01L27/11507 , H01L28/55
摘要： Disclosed is a ferroelectric random access memory device having ferroelectric capacitors. The FRAM device according to the present invention prevents the polymer by using the TiN layer as an etching (or hard) mask and prevents the Ti atoms from being diffused into the ferroelectric layer by applying the thermal treatment to the TiN pattern on the Pt upper electrode. Furthermore, adhesive strength between the capping oxide layer and the Pt upper electrode is improved by the oxidation of the TiN pattern.
摘要翻译：公开了具有铁电电容器的铁电随机存取存储器件。根据本发明的FRAM器件通过使用TiN层作为蚀刻（或硬）掩模来防止聚合物，并且通过对Pt上电极上的TiN图案进行热处理来防止Ti原子扩散到铁电层中。此外，通过TiN图案的氧化来改善封盖氧化物层和Pt上电极之间的粘合强度。

12. 发明授权

US09871045B2 Semiconductor device with damascene bit line and method for manufacturing the same 有权
公开(公告)号：US09871045B2
公开(公告)日：2018-01-16
申请号：US13334000
申请日：2011-12-21
申请人： Seung-Jin Yeom , Noh-Jung Kwak , Chang-Heon Park , Sun-Hwan Hwang
发明人： Seung-Jin Yeom , Noh-Jung Kwak , Chang-Heon Park , Sun-Hwan Hwang
IPC分类号： H01L21/768 , H01L27/108
CPC分类号： H01L27/10855 , H01L27/10885
摘要： A semiconductor device includes first conductive patterns adjacent to each other and isolated by a trench including first and second trenches, a second conductive pattern formed in the first trench, and an insulating pattern partially filling the second trench under the second conductive pattern and formed between the first conductive patterns and the second conductive pattern.

13. 发明授权

US08946047B2 Method for fabricating capacitor 有权
公开(公告)号：US08946047B2
公开(公告)日：2015-02-03
申请号：US12794412
申请日：2010-06-04
申请人： Jin-Hyock Kim , Seung-Jin Yeom , Ki-Seon Park , Han-Sang Song , Deok-Sin Kil , Jae-Sung Roh
发明人： Jin-Hyock Kim , Seung-Jin Yeom , Ki-Seon Park , Han-Sang Song , Deok-Sin Kil , Jae-Sung Roh
IPC分类号： H01L21/20 , H01L49/02 , H01L27/108 , H01L21/8239
CPC分类号： H01L27/10844 , H01L21/8239 , H01L27/10808 , H01L27/10835 , H01L27/10852 , H01L27/10855 , H01L28/55 , H01L28/60 , H01L28/65 , H01L28/91
摘要： A method for fabricating a capacitor includes: forming a storage node contact plug over a substrate; forming an insulation layer having an opening exposing a surface of the storage node contact plug over the storage contact plug; forming a conductive layer for a storage node over the insulation layer and the exposed surface of the storage node contact plug through two steps performed at different temperatures; performing an isolation process to isolate parts of the conductive layer; and sequentially forming a dielectric layer and a plate electrode over the isolated conductive layer.

14. 发明授权

US08048757B2 Method for fabricating capacitor utilizes a sacrificial pattern enclosing the upper outer walls of the storage nodes 失效
标题翻译：用于制造电容器的方法利用包围存储节点的上外壁的牺牲图案
公开(公告)号：US08048757B2
公开(公告)日：2011-11-01
申请号：US13069290
申请日：2011-03-22
申请人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
发明人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10852 , H01L28/65
摘要： A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
摘要翻译：制造电容器的方法包括在衬底的单元区域和周边区域上形成隔离层。隔离层在单元区域中形成多个开放区域。存储节点形成在开放区域的表面上。蚀刻隔离层的上部以露出存储节点的上部外壁。在隔离层上形成牺牲图案以封闭存储节点的上外壁。对外围区域中的隔离层进行蚀刻，以在单元区域中形成牺牲图案之后获得的所得结构的侧面露出。利用支持存储节点的牺牲图案，移除单元区域中的隔离层。然后去除牺牲图案。

15. 发明申请

US20110171807A1 METHOD FOR FABRICATING CAPACITOR 失效
标题翻译：电容器制作方法
公开(公告)号：US20110171807A1
公开(公告)日：2011-07-14
申请号：US13069290
申请日：2011-03-22
申请人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
发明人： Jae-Sung Roh , Kee-Jeung Lee , Han-Sang Song , Seung-Jin Yeom , Deok-Sin Kil , Young-Dae Kim , Jin-Hyock Kim
IPC分类号： H01L21/02
CPC分类号： H01L28/91 , H01L27/10852 , H01L28/65
摘要： A method for fabricating a capacitor includes forming an isolation layer over a cell region and a peripheral region of a substrate. The isolation layer forms a plurality of open regions in the cell region. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial pattern is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer in the peripheral region is etched to expose side portions of the resulting structure obtained after forming the sacrificial pattern in the cell region. With the sacrificial pattern supporting the storage nodes, the isolation layer in the cell region is removed. The sacrificial pattern is then removed.
摘要翻译：制造电容器的方法包括在衬底的单元区域和周边区域上形成隔离层。隔离层在单元区域中形成多个开放区域。存储节点形成在开放区域的表面上。蚀刻隔离层的上部以露出存储节点的上部外壁。在隔离层上形成牺牲图案以封闭存储节点的上外壁。对外围区域中的隔离层进行蚀刻，以在单元区域中形成牺牲图案之后获得的所得结构的侧面露出。利用支持存储节点的牺牲图案，移除单元区域中的隔离层。然后去除牺牲图案。

16. 发明申请

US20100014212A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20100014212A1
公开(公告)日：2010-01-21
申请号：US12569769
申请日：2009-09-29
申请人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
发明人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
IPC分类号： H01G4/10 , B32B37/14 , B05D5/12
CPC分类号： H01L21/02189 , H01L21/02178 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3162 , H01L21/31641 , H01L28/40 , H01L28/56
摘要： A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
摘要翻译：电容器包括下电极，下电极上的电介质结构，包括至少一个结晶的氧化锆ZrO 2的电介质结构）层和至少一个非晶形氧化铝（Al 2 O 3）层，以及形成在电介质结构上的上电极。一种制造电容器的方法包括在一定结构上形成下电极，在下电极上形成包括至少一个结晶氧化锆（ZrO 2）层和至少一个非晶形氧化铝（Al 2 O 3）层的电介质结构，介电结构上的上电极。

17. 发明授权

US07361544B2 Method for fabricating capacitor in semiconductor device 有权
标题翻译：在半导体器件中制造电容器的方法
公开(公告)号：US07361544B2
公开(公告)日：2008-04-22
申请号：US11448797
申请日：2006-06-08
申请人： Seung-Jin Yeom , Deok-Sin Kil , Jin-Hyock Kim , Ki-Seon Park , Han-Sang Song , Jae-Sung Roh
发明人： Seung-Jin Yeom , Deok-Sin Kil , Jin-Hyock Kim , Ki-Seon Park , Han-Sang Song , Jae-Sung Roh
IPC分类号： H01L21/8242
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/91
摘要： A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node.
摘要翻译：提供了一种在半导体器件中制造电容器的方法。该方法包括在衬底上形成绝缘层; 将金属源冲洗到绝缘层上以改变绝缘层的表面的特性，以改善金属基材料对绝缘层表面的粘附性; 在所述冲洗绝缘层上形成包括所述金属基材料的存储节点; 并且在金属基存储节点上依次形成电介质层和平板电极。

18. 发明申请

US20070102742A1 Capacitor and method for fabricating the same 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20070102742A1
公开(公告)日：2007-05-10
申请号：US11595548
申请日：2006-11-10
申请人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
发明人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
IPC分类号： H01L29/94
CPC分类号： H01L21/02189 , H01L21/02178 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3162 , H01L21/31641 , H01L28/40 , H01L28/56
摘要： A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
摘要翻译：电容器包括下电极，在下电极上的电介质结构，所述电介质结构包括至少一个结晶的氧化锆（ZrO 2 O 2）层和至少一种无定形氧化铝（Al 2 在上述电介质结构上形成上层电极。制造电容器的方法包括在特定结构上形成下电极，形成包括至少一种结晶的氧化锆（ZrO 2 O 2）层和至少一种无定形氧化铝（Al

19. 发明授权

US07173301B2 Ferroelectric memory device with merged-top-plate structure and method for fabricating the same 失效
标题翻译：具有合并顶板结构的铁电存储器件及其制造方法
公开(公告)号：US07173301B2
公开(公告)日：2007-02-06
申请号：US11135767
申请日：2005-05-23
申请人： Eun-Seok Choi , Seung-Jin Yeom
发明人： Eun-Seok Choi , Seung-Jin Yeom
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/57 , H01L28/60 , H01L28/65 , H01L28/75
摘要： The inventive ferroelectric memory device includes: a semiconductor substrate providing elements of a transistor; a first inter-layer insulating layer formed on the semiconductor substrate; a storage node contact connected to elements of the transistor by passing through the first inter-layer insulating layer; a barrier layer contacting simultaneously to the storage node contact and the first inter-layer insulating layer; a lower electrode having a space for isolating the first inter-layer insulating layer and being formed on the barrier layer; a glue layer being formed on the first inter-layer insulating layer and encompassing lateral sides of the lower electrode as filling the space; a second inter-layer insulating layer exposing a surface of the lower electrode and encompassing the glue layer; a ferroelectric layer formed on the glue layer including the second inter-layer insulating layer; and an upper electrode formed on the ferroelectric layer.
摘要翻译：本发明的铁电存储器件包括：提供晶体管元件的半导体衬底; 形成在所述半导体基板上的第一层间绝缘层; 通过穿过所述第一层间绝缘层而连接到所述晶体管的元件的存储节点接触; 与所述存储节点接触部和所述第一层间绝缘层同时接触的阻挡层; 具有用于隔离所述第一层间绝缘层并形成在所述阻挡层上的空间的下电极; 胶层在第一层间绝缘层上形成，并且在下部电极的横向侧面填充空间; 第二层间绝缘层，暴露下电极的表面并包围胶层; 形成在包括第二层间绝缘层的胶层上的铁电层; 以及形成在强电介质层上的上电极。

20. 发明授权

US06391660B2 Method for fabricating semiconductor memory device having ferroelectric layer 失效
标题翻译：具有铁电层的半导体存储器件的制造方法
公开(公告)号：US06391660B2
公开(公告)日：2002-05-21
申请号：US09891255
申请日：2001-06-27
申请人： Soon-Yong Kweon , Seung-Jin Yeom
发明人： Soon-Yong Kweon , Seung-Jin Yeom
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , H01L21/02271 , H01L21/0228 , H01L21/02337 , H01L21/31683 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A method for fabricating a semiconductor memory device is provided which can omit a fabricating step of removing a seed layer. The method for fabricating a semiconductor memory device includes the steps of a) providing a semiconductor structure, wherein the semiconductor structure has an insulating layer formed on a semiconductor substrate; b) forming a seed layer on an insulating layer covering the semiconductor substrate; c) forming a sacrifice layer on the seed layer; d) selectively etching the sacrifice layer to expose the seed layer, thereby defining an opening; e) forming a lower electrode layer on the seed layer disposed within the opening; f) removing the sacrifice layer to expose the lower electrode and a portion of the seed layer not covered by the lower electrode; g) oxidizing the exposed portion of the seed layer to form an insulating layer; and h) sequentially forming a ferroelectric layer and an upper electrode on the lower electrode.
摘要翻译：提供了一种用于制造半导体存储器件的方法，其可以省略去除种子层的制造步骤。半导体存储器件的制造方法包括以下步骤：a）提供半导体结构，其中半导体结构具有在半导体衬底上形成的绝缘层; b）在覆盖半导体衬底的绝缘层上形成晶种层; c）在种子层上形成牺牲层; d）选择性地蚀刻牺牲层以暴露种子层，从而限定开口; e）在设置在开口内的种子层上形成下电极层; f）去除牺牲层以暴露下电极和未被下电极覆盖的种子层的一部分; g）氧化种子层的暴露部分以形成绝缘层; 和h）在下电极上依次形成铁电层和上电极。

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