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11. 发明授权

US5073268A Process and system for purifying pure water or ultrapure water 失效
标题翻译：净化水或超声波水的过程和系统
公开(公告)号：US5073268A
公开(公告)日：1991-12-17
申请号：US625427
申请日：1990-12-11
申请人： Takayuki Saito , Ken Nakajima , Yoki Iwase , Yukio Ikeda , Hiroyuki Shima
发明人： Takayuki Saito , Ken Nakajima , Yoki Iwase , Yukio Ikeda , Hiroyuki Shima
IPC分类号： B01D19/00 , B01D61/00 , C02F1/20 , C02F1/32 , C02F1/42 , C02F1/44 , C02F1/50 , C02F1/70 , C02F1/72 , C02F1/78 , C02F9/00
CPC分类号： B01D61/00 , B01D19/0031 , C02F1/20 , C02F1/42 , C02F1/444 , C02F9/00 , C02F1/32 , C02F1/722 , C02F2103/04 , Y10S210/90
摘要： Ultrapure water of extremely high purity, i.e. a so-called ultra-ultrapure water is formed by the present system for purifying a pure water or ultrapure water, (1) the TOC component which was contained in pipes, etc. and which was subsequently dissolved in a pure water or ultrapure water to be treated, is decomposed and the pure water or ultrapure water is simultaneously sterilized, by the combined use of an oxidizing agent and ultraviolet irradiation, (2) the DO contained in the water to be treated and the DO derived from the addition of the oxidizing agent are decomposed into H.sub.2 O and simultaneous sterilization is effected, by the combined use of H.sub.2 gas and ultraviolet irradiation, (3) the remaining H.sub.2 gas is removed by a membrane degassing unit, and (4) the resulting water is subjected to an ion exchange treatment and an ultrafiltration treatment, in the above order, whereby the pure water or ultrapure water whose purity has been reduced by, for example, the dissolution of the impurities contained in pipes can be purified and converted to an ultrapure water of extremely high purity. The resulting ultrarapure water is particularly utilized as a rinsing water in the electronics industry where ultrahigh density integrated circuits (ULSI circuits) represented by 4 megabit dynamic memory are produced.

12. 发明授权

US5066316A Exhaust gas purifying apparatus 失效
标题翻译：废气净化装置
公开(公告)号：US5066316A
公开(公告)日：1991-11-19
申请号：US551242
申请日：1990-07-11
申请人： Yukio Ikeda
发明人： Yukio Ikeda
IPC分类号： B01D53/32 , B03C3/16 , B03C3/53 , B03C3/78 , F01N3/08
CPC分类号： F01N3/0892 , B01D53/323 , B03C3/16 , B03C3/53 , B03C3/78
摘要： The present invention presents an exhaust gas purifying apparatus characterized by a first electrode composed of an electric conductor in which its surface is formed as a projected formation, a second electrode composed of an electric conductor and disposed opposite to the first electrode, an electric insulator attached to at least one surface of the second electrode, opposite to the first electrode, a streamer corona generating portion composed of a high voltage electric power source connected to the first and second electrodes, means for injecting an adhesive oil into the surface of the electric insulator at the first electrode side, means for circulating the adhesive oil, a set member for removably supporting the streamer corona generating portion within a path duct of the exhaust gas, and further a contact member for contacting the second electrode when the streamer corona generating portion is mounted within a path duct of the exhaust gas. Furthermore, the present invention relates to an exhaust gas purifying apparatus for purifying the exhaust gas of automobiles by a corona discharge, and particularly to an exhaust gas purifying apparatus including a streamer corona generating portion capable of generating a streamer corona discharge with stability for a long period.
摘要翻译：本发明提供一种排气净化装置，其特征在于，具有由导电体构成的第一电极和第一电极，所述第一电极的表面形成为突出形状，由电导体构成并与所述第一电极相对设置的第二电极，到与第一电极相对的第二电极的至少一个表面，与连接到第一和第二电极的高压电源组成的流光电晕发生部分，用于将粘合剂油注入电绝缘体的表面的装置在第一电极侧，用于使粘合剂油循环的装置，用于在排气的路径管道内可移除地支撑流光电晕产生部分的固定构件，以及另外用于当流光电晕产生部分为安装在废气的通道管道内。此外，本发明涉及一种通过电晕放电来净化汽车废气的废气净化装置，特别涉及一种能够长时间稳定地产生流光电晕放电的流光电晕发生部的排气净化装置期。

13. 发明授权

US08047084B2 Torque-index sensor 有权
标题翻译：转矩传感器
公开(公告)号：US08047084B2
公开(公告)日：2011-11-01
申请号：US12750082
申请日：2010-03-30
申请人： Ken Okuyama , Yukio Ikeda , Yukitoshi Terasaka , Takahiro Sanada
发明人： Ken Okuyama , Yukio Ikeda , Yukitoshi Terasaka , Takahiro Sanada
IPC分类号： G01B7/30 , G01L3/00
CPC分类号： G01D15/00 , G01D1/00 , G01L3/104 , G01L5/221
摘要： A torque-index sensor having index sensor and torque sensor closely arranged and integrated therein with lightened interference between them is provided. The invented torque-index sensor is comprised of torque sensor that includes first magnetic sensor arranged beside first annular-shaped magnet and index sensor that includes second magnet arranged beside annular-shaped encoder and second magnetic sensor that are arranged being in-line on common axis; and means for varying magnetic flux, which changes direction of magnetic flux that is generated from second magnet toward first magnetic sensor, positioned between first magnetic sensor in torque sensor and second magnet in index sensor.
摘要翻译：提供一种转矩指数传感器，其具有紧密排列和集成在其中的折射率传感器和扭矩传感器，其间具有减轻的干涉。本发明的转矩传感器包括转矩传感器，转矩传感器包括布置在第一环形磁体旁边的第一磁传感器和索引传感器，该传感器包括布置在环形编码器旁边的第二磁体和第二磁传感器， ; 以及用于改变磁通量的装置，其改变位于扭矩传感器中的第一磁传感器和索引传感器中的第二磁体之间的从第二磁体产生的磁通量的方向朝向第一磁传感器。

14. 发明申请

US20050104686A1 High frequency module and antenna device 失效
标题翻译：高频模块和天线设备
公开(公告)号：US20050104686A1
公开(公告)日：2005-05-19
申请号：US10508832
申请日：2003-03-20
申请人： Naofumi Yoneda , Moriyasu Miyazaki , Tetsu Ohwada , Hideyuki Oh-Hashi , Koji Yamanaka , Kazutomi Mori , Yukio Ikeda , Toshiyuki Horie , Akio Iida , Yutaka Ozaki
发明人： Naofumi Yoneda , Moriyasu Miyazaki , Tetsu Ohwada , Hideyuki Oh-Hashi , Koji Yamanaka , Kazutomi Mori , Yukio Ikeda , Toshiyuki Horie , Akio Iida , Yutaka Ozaki
IPC分类号： H01P1/208 , H01P1/211 , H01P1/213 , H04B1/40
CPC分类号： H01P1/2131 , H01P1/2138
摘要： The present invention includes: a first main waveguide 1; a T-branch circuit 3 connected thereto; a first low-pass filter 5 connected thereto; a band-pass filter 7 connected to the first T-branch circuit 3; a first converter 8 connected to the first low-pass filter 5 for converting transmission lines between a waveguide and a microwave integrated circuit; an amplifier 10 connected to the first converter and structured by the microwave integrated circuit; a second converter 9 connected thereto for converting transmission lines between a waveguide and the microwave integrated circuit; a second low-pass filter 6 connected thereto; a second T-branch circuit 4 connected to the second low-pass filter and the band-pass filter 7; and a second main waveguide 2 connected to the second T-branch circuit.
摘要翻译：本发明包括：第一主波导1; 与其连接的T分支电路3; 与其连接的第一低通滤波器5; 连接到第一T分支电路3的带通滤波器7; 连接到第一低通滤波器5的第一转换器8，用于转换波导和微波集成电路之间的传输线; 连接到第一转换器并由微波集成电路构成的放大器10; 连接到其上的用于转换波导和微波集成电路之间的传输线的第二转换器9; 与其连接的第二低通滤波器6; 连接到第二低通滤波器和带通滤波器7的第二T分支电路4; 以及连接到第二T分支电路的第二主波导2。

15. 发明授权

US06894562B2 High-frequency amplifier, feed-forward amplifier and distortion compensating amplifier 失效
标题翻译：高频放大器，前馈放大器和失真补偿放大器
公开(公告)号：US06894562B2
公开(公告)日：2005-05-17
申请号：US10111411
申请日：2001-08-30
申请人： Masatoshi Nakayama , Kenichi Horiguchi , Yukio Ikeda , Satoshi Kunugi , Yuji Sakai
发明人： Masatoshi Nakayama , Kenichi Horiguchi , Yukio Ikeda , Satoshi Kunugi , Yuji Sakai
IPC分类号： H03F3/68 , H03F1/02 , H03F1/32 , H03F1/56 , H03F3/189 , H03F3/193 , H03F3/60
CPC分类号： H03F3/604 , H03F1/3223 , H03F1/565
摘要： A divider 3 for dividing and distributing a high-frequency signal input from an input terminal 1 to two output sides, a main amplifying unit 4, connected to one output side of the divider 3, for amplifying one high-frequency signal output from the divider 3, a subsidiary amplifying unit 5, connected to the other output side of the divider 3, for performing no operation in case of a low instantaneous electric power of the other high-frequency signal output from the divider 3 and amplifying the other high-frequency signal in case of a high instantaneous electric power of the other high-frequency signal and a circulator 6 for injecting the high-frequency signal amplified in the subsidiary amplifying unit 5 into the output side of the main amplifying unit 4 and injecting the high-frequency signal amplified in the main amplifying unit 4 into an output terminal 2 are arranged.
摘要翻译：分频器3，用于将从输入端子1输入的高频信号分配到两个输出侧;主放大单元4，连接到除法器3的一个输出侧，用于放大从分频器输出的一个高频信号如图3所示，附加放大单元5连接到除法器3的另一个输出侧，用于在从分频器3输出的另一个高频信号的低瞬时功率的情况下不执行操作，并且放大另一个高频在另一个高频信号的高瞬时功率的情况下的信号;以及用于将在副放大单元5中放大的高频信号注入到主放大单元4的输出侧的循环器6，并且将高频在主放大单元4中被放大为输出端子2的信号被布置。

16. 发明授权

US06873208B2 High-frequency amplifier 失效
标题翻译：高频放大器
公开(公告)号：US06873208B2
公开(公告)日：2005-03-29
申请号：US10069664
申请日：2001-06-29
申请人： Shintaro Shinjo , Kazutomi Mori , Hiroyuki Joba , Hiroaki Nagano , Mitsuru Motizuki , Yukio Ikeda , Noriharu Suematsu
发明人： Shintaro Shinjo , Kazutomi Mori , Hiroyuki Joba , Hiroaki Nagano , Mitsuru Motizuki , Yukio Ikeda , Noriharu Suematsu
IPC分类号： H03F1/02 , H03F1/30 , H03F1/32 , H03F3/193 , H03F3/60 , H03G3/20
CPC分类号： H03F3/1935 , H03F1/0261 , H03F1/0266 , H03F1/302 , H03F3/193
摘要： A high-frequency amplifying unit 2 in which a steep gain variation developed according to a change in the amplitude of input high-frequency signal is suppressed is provided. It amplifies an input high-frequency signal with a plurality of transistors 12-1 to 12-N at the same time a measuring circuit 27 measures amplitude of the input high-frequency signal, and a bias control circuit 26 continuously controls a bias applied to each transistors 12-1 to 12-N according to the value of amplitude measured by the measuring circuit 27. Thus it is possible to suppress a steep gain variation produced according to a variation in the amplitude of input high-frequency signal.
摘要翻译：提供一种高频放大单元2，其中抑制了根据输入的高频信号的振幅的变化而产生的陡峭的增益变化。它同时用多个晶体管12-1至12-N放大输入高频信号，同时测量电路27测量输入的高频信号的幅度，偏置控制电路26连续地控制施加到每个晶体管12-1至12-N根据由测量电路27测量的振幅值。因此，可以抑制根据输入的高频信号的振幅的变化而产生的陡峭的增益变化。

17. 发明授权

US06750724B1 Multistage amplifier 失效
标题翻译：多级放大器
公开(公告)号：US06750724B1
公开(公告)日：2004-06-15
申请号：US10110200
申请日：2002-04-17
申请人： Kazutomi Mori , Shintarou Shinjo , Yukio Ikeda
发明人： Kazutomi Mori , Shintarou Shinjo , Yukio Ikeda
IPC分类号： H03F304
CPC分类号： H03F3/604 , H03F1/0261 , H03F1/30 , H03F1/3276 , H03F3/193 , H03F3/1935
摘要： A bias condition of at least one amplifier among amplifiers other than a last-stage amplifier is set in consideration of the relation between an idle current and a saturation current.
摘要翻译：考虑到空载电流和饱和电流之间的关系，设置了最后一级放大器以外的放大器中的至少一个放大器的偏置条件。

18. 发明授权

US06194318B1 Manufacturing multiple layered structures of large scale integrated semiconductor devices 有权
标题翻译：制造大规模集成半导体器件的多层结构
公开(公告)号：US06194318B1
公开(公告)日：2001-02-27
申请号：US09309252
申请日：1999-05-10
申请人： Yukio Ikeda
发明人： Yukio Ikeda
IPC分类号： H01L21311
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A process of making a multiple layered structure comprises etching at least partially a portion of dielectric material above a fuse upon etching at least one hole to establish electrical interconnection between the adjacent two wiring layers separated by the dielectric material. After forming a protective film, a portion of the protective film above the fuse is etched upon etching at least one aperture to expose a pad of one of the wiring layers underneath the protective film. The remaining material above the fuse is removed by etching using the same mask as etching the at least one aperture through the protective film. Electrical testing is conducted using an electrical probe at the pad. In response to result of the electrical testing, laser energy is focused to a target fuse.
摘要翻译：制造多层结构的工艺包括在蚀刻至少一个孔以至在由电介质材料隔开的相邻的两个布线层之间形成电互连的情况下，至少部分地在保险丝上方蚀刻一部分介电材料。在形成保护膜之后，在蚀刻至少一个孔之后蚀刻保险丝上方的保护膜的一部分，以暴露保护膜下面的布线层之一的焊盘。通过使用与通过保护膜蚀刻至少一个孔的相同掩模的蚀刻来去除熔丝之上的剩余材料。在焊盘上使用电探针进行电气测试。响应于电气测试的结果，激光能量聚焦到目标保险丝。

19. 发明授权

US5801122A N-phenyltetrahydrophthalamic acid derivatives, methods of producing same, and herbicides containing same as effective components 失效
标题翻译： N-苯基四氢酞酸衍生物，其制造方法，以及含有与有效成分相同的除草剂
公开(公告)号：US5801122A
公开(公告)日：1998-09-01
申请号：US676148
申请日：1996-07-15
申请人： Tetsuo Takematsu , Takeo Komata , Takashi Kume , Yumiko Kohda , Kiyoshi Suzuki , Matsue Kawamura , Yukio Ikeda , Kaoru Mori
发明人： Tetsuo Takematsu , Takeo Komata , Takashi Kume , Yumiko Kohda , Kiyoshi Suzuki , Matsue Kawamura , Yukio Ikeda , Kaoru Mori
IPC分类号： A01N37/26 , A01N39/00 , A01N43/10 , A01N43/40 , C07C323/52 , C07D213/82 , C07D333/38 , A01N43/36 , C07C321/00 , C07D333/22
CPC分类号： C07D213/82 , A01N37/26 , A01N39/00 , A01N43/10 , A01N43/40 , C07C323/52 , C07D333/38 , C07C2101/16
摘要： The invention provides N-phenyltetrahydrophthalamic acid derivatives represented by the general formula �I!, methods of producing the same, herbicides containing the same as the effective components, imidoylchloride derivatives as the intermediate products and methods of producing the same, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a lower alkoxycarbonylalkylthio group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, and R.sup.3 represents a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, or a lower alkoxyalkoxy group. The herbicides of the present invention, which are very useful, can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and are not harmful to crops.
摘要翻译： PCT No.PCT / JP95 / 00044 Sec。 371日期：1996年7月15日 102（e）日期1996年7月15日PCT提交1995年1月19日PCT公布。第WO95 / 19962号公报日期1995年7月27日本发明提供由通式[I]表示的N-苯基四氢酞酸衍生物，其制备方法，含有与有效成分相同的除草剂，作为中间产物的亚氨基氯衍生物及其制备方法，表示氢原子或卤素原子，R1表示低级烷氧基羰基烷硫基，R2表示低级烷基，卤代低级烷基或取代或未取代的苯基，R3表示低级烷氧基，低级链烯氧基，低级炔氧基基团或低级烷氧基烷氧基。本发明的除草剂非常有用，可广泛应用于旱地，水田，果园，草坪，森林，非作物地等，对作物无害。

20. 发明授权

US5500559A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5500559A
公开(公告)日：1996-03-19
申请号：US249127
申请日：1994-05-25
申请人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
发明人： Masahiro Miyata , Hirokazu Ezawa , Naoaki Ogure , Manabu Tsujimura , Takeyuki Ohdaira , Hiroaki Inoue , Yukio Ikeda
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , H01L31/06
CPC分类号： H01L21/76873 , H01L21/76843 , H01L21/76858 , H01L21/76877 , H01L23/53242 , H01L23/53247 , H01L2924/0002
摘要： In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.
摘要翻译：在根据本发明的半导体器件及其制造方法中，例如，在硅衬底上沉积绝缘膜，并且根据预定的布线图案在绝缘膜中形成凹槽。钛和钯依次沉积在绝缘膜上以分别形成钛膜和钯膜。通过电镀在钯膜上形成银膜，通过研磨形成槽状的银布线层。所得结构在约700℃的温度下退火，并通过使钛膜和钯膜彼此合金化形成金属间化合物。因此，电阻低于铝的掩埋型布线层由银布线层和金属间化合物构成。

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