专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US5645947A Silicon-containing deposited film 失效
标题翻译：含硅沉积膜
公开(公告)号：US5645947A
公开(公告)日：1997-07-08
申请号：US477269
申请日：1995-06-07
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B32B9/00 , G03G5/04
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A deposition film is formed on a substrate in a deposition space (A) by the chemical reaction between a gaseous precursor of a higher silicon halide or a higher halosilane formed in a decomposition space (B) and a separately-introduced gaseous, activated species of hydrogen, silane or a halosilane formed in a decomposition space (C).
摘要翻译：通过在分解空间（B）中形成的高级卤化硅或高级卤代硅烷的气体前体与单独导入的气态活化物质（A）中的化学反应在沉积空间（A）中的基底上形成沉积膜氢，硅烷或在分解空间（C）中形成的卤代硅烷。

12. 发明授权

US4853251A Process for forming deposited film including carbon as a constituent element 失效
标题翻译：用于形成包含碳作为构成元素的沉积膜的工艺
公开(公告)号：US4853251A
公开(公告)日：1989-08-01
申请号：US831411
申请日：1986-02-20
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/043 , G03G5/082 , G03G5/10 , H01L21/205 , H01L31/075 , H01L31/20
CPC分类号： G03G5/08214 , C23C16/30 , C23C16/452 , G03G5/0433 , G03G5/08278 , G03G5/08285 , G03G5/102 , G03G5/104 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/931
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）彼此分开反应，然后向其提供放电能量并允许物质彼此反应，从而在基底上形成沉积膜。

13. 发明授权

US4726963A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4726963A
公开(公告)日：1988-02-23
申请号：US61003
申请日：1987-06-09
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/48 , H01L21/205 , B05D3/06
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/482 , C23C16/483 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then irradiating them with light energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）分开反应，然后用光能照射它们，从而允许物质彼此反应，从而在基底上形成沉积膜。

14. 发明授权

US5322568A Apparatus for forming deposited film 失效
标题翻译：用于形成沉积膜的装置
公开(公告)号：US5322568A
公开(公告)日：1994-06-21
申请号：US999548
申请日：1992-12-31
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu , Masaaki Hirooka
IPC分类号： C23C16/452 , C23C16/00
CPC分类号： C23C16/452
摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.
摘要翻译：一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中，并允许他们作出反应彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

15. 发明授权

US4837048A Method for forming a deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US4837048A
公开(公告)日：1989-06-06
申请号：US920189
申请日：1986-10-17
申请人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Jun-ichi Hanna , Isamu Shimizu
IPC分类号： C23C14/14 , C23C16/22 , C23C16/452 , H01L21/205
CPC分类号： H01L21/0237 , C23C16/22 , C23C16/452 , H01L21/02532 , H01L21/0262
摘要： A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.
摘要翻译：用于形成沉积膜的方法包括引入用于形成沉积膜的气态原料和具有氧化作用的气态卤素氧化剂（X），所述氧化剂具有氧化作用的原料，至少一种氧化剂（ON）的气态氧并且优选还包含含有价电子控制剂成分作为成分的气态物质（D）进入反应空间，以使它们之间发生化学接触，从而在激发态下形成含有前体的多种前体，并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

16. 发明授权

US4818560A Method for preparation of multi-layer structure film 失效
标题翻译：多层结构薄膜的制备方法
公开(公告)号：US4818560A
公开(公告)日：1989-04-04
申请号：US945894
申请日：1986-12-24
申请人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
发明人： Shunichi Ishihara , Jun-Ichi Hanna , Isamu Shimizu
IPC分类号： H01L31/04 , C23C16/22 , C23C16/452 , G03G5/082 , H01L21/02 , H01L21/205 , B05D3/06
CPC分类号： H01L21/02425 , C23C16/22 , C23C16/452 , H01L21/02381 , H01L21/02422 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/0262
摘要： A method for preparing a multi-layer structure film by forming a deposited film according to the chemical vapor depostion method comprises introducing a subjective starting material gas (A) which is the major flow rate component and an objective starting material gas (B) which is the minor flow rate component and hydrogen externally activated into a reaction space and controlling periodically the amount of said objective starting material gas (B) introduced to thereby form a deposited film with a multi-layer structure.
摘要翻译：通过根据化学气相沉积法形成沉积膜来制备多层结构膜的方法包括引入作为主流量分量的主要原料气体（A）和目标原料气体（B），其是小流量成分和氢外部活化成反应空间，并周期性地控制引入的所述目标原料气体（B）的量，从而形成具有多层结构的沉积膜。

17. 发明授权

US4801468A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4801468A
公开(公告)日：1989-01-31
申请号：US831704
申请日：1986-02-21
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/30 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/075 , H01L31/20 , B05D3/06
CPC分类号： G03G5/08292 , C23C16/30 , C23C16/452 , H01L21/0237 , H01L21/02422 , H01L21/02425 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/075 , H01L31/20 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, then providing them with discharge energy and thereby allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）彼此分开反应，然后向其提供放电能量，从而允许物质彼此反应，从而在基底上形成沉积膜。

18. 发明授权

US4717585A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4717585A
公开(公告)日：1988-01-05
申请号：US826898
申请日：1986-02-06
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： C23C16/22 , C23C16/452 , H01L21/205 , B05D3/06
CPC分类号： H01L21/0245 , C23C16/22 , C23C16/452 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing carbon and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately from each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：形成沉积膜的方法包括将含有碳和卤素的化合物分解形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）引入到容纳基材的膜形成空间中其与所述活性物质（A）相互反应，然后允许两种物质彼此反应，从而在基材上形成沉积膜。

19. 发明授权

US4716048A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US4716048A
公开(公告)日：1987-12-29
申请号：US828256
申请日：1986-02-11
申请人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
发明人： Shunichi Ishihara , Shigeru Ohno , Masahiro Kanai , Shunri Oda , Isamu Shimizu
IPC分类号： H01L21/205 , H01L21/469
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A process for forming a deposited film comprises introducing into a film forming space housing a substrate therein an active species (A) formed by decomposition of a compound containing germanium and a halogen and an active species (B) formed from a chemical substance for film formation which is reactive with said active species (A) separately form each other, and then allowing both the species to react with each other thereby to form a deposited film on the substrate.
摘要翻译：用于形成沉积膜的方法包括将容纳基材的成膜空间引入其中包含通过分解含有锗和卤素的化合物形成的活性物质（A）和由用于成膜的化学物质形成的活性物质（B）其与所述活性物质（A）反应，彼此分开形成，然后允许物质彼此反应，从而在基底上形成沉积膜。

20. 发明授权

US5910342A Process for forming deposition film 失效
标题翻译：沉积膜成膜工艺
公开(公告)号：US5910342A
公开(公告)日：1999-06-08
申请号：US469676
申请日：1995-06-06
申请人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
发明人： Masaaki Hirooka , Kyosuke Ogawa , Shunichi Ishihara , Isamu Shimizu
IPC分类号： C23C16/24 , C23C16/448 , C23C16/452 , G03G5/082 , H01L21/205 , H01L31/20 , B06D3/06 , C23C16/00
CPC分类号： H01L21/0245 , C23C16/24 , C23C16/448 , C23C16/452 , G03G5/08278 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要翻译：用于在基板上形成沉积膜的方法包括将分解空间（B）中形成的前体或活化物质和形成在分解空间（C）中的活化物质分别引入沉积空间中，其中膜形成在基底上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式