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11. 发明授权

US5173909A Wavelength tunable laser diode 失效
标题翻译：波长激光二极管
公开(公告)号：US5173909A
公开(公告)日：1992-12-22
申请号：US720691
申请日：1991-06-25
申请人： Shinji Sakano , Akihiko Oka , Katutoshi Saito , Naoki Chinone
发明人： Shinji Sakano , Akihiko Oka , Katutoshi Saito , Naoki Chinone
IPC分类号： H01S5/00 , H01S5/026 , H01S5/042 , H01S5/06 , H01S5/062 , H01S5/0625 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/0612 , H01S5/0261 , H01S5/06206 , H01S5/0622 , H01S5/06255 , H01S5/34306 , H01S5/34313
摘要： A wavelength tunable laser diode comprising a temperature variable heater separated from an active layer by a distance less than the thickness of a compound semiconductor substrate. Because the heater is located very close to the active layer, the response time of temperature change is improved. That in turn widens the tunable range of the laser diode.

12. 发明授权

US5170404A Semiconductor laser device suitable for optical communications systems drive 失效
标题翻译：半导体激光器件适用于光通信系统的驱动
公开(公告)号：US5170404A
公开(公告)日：1992-12-08
申请号：US576607
申请日：1990-08-31
申请人： Tsukuru Ohtoshi , Shinji Sasaki , Naoki Chinone , Kazuhisa Uomi , Shinji Sakano
发明人： Tsukuru Ohtoshi , Shinji Sasaki , Naoki Chinone , Kazuhisa Uomi , Shinji Sakano
IPC分类号： H01S5/22 , H01S5/223 , H01S5/24 , H01S5/32 , H01S5/323 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/24 , H01S5/32325 , H01S5/2205 , H01S5/2211 , H01S5/2227 , H01S5/2237 , H01S5/3201 , H01S5/32391 , H01S5/3406
摘要： Disclosed in a semiconductor laser device for use in a system or apparatus utilizing light for information transmission in optical communication or the like, in which lattice defects or the like are prevented from occurring in the vicinity of a light-emitting active area to thereby reduce a leakage current which substantially makes no contribution to light emission. In order to realize the above semiconductor laser device, a wide gap area for preventing a leakage current is formed to be flat or formed to be spatially apart from the active area.
摘要翻译：公开在用于在光通信等中利用光进行信息传输的系统或装置的半导体激光装置中，其中防止在发光有源区附近发生晶格缺陷等，从而减少泄漏电流基本上对发光没有贡献。为了实现上述半导体激光器件，用于防止漏电流的宽间隙区域形成为平坦或形成为与有源区域空间分开。

13. 发明授权

US07689028B2 Method and apparatus for evaluating processing apparatus status and predicting processing result 有权
标题翻译：用于评估处理装置状态和预测处理结果的方法和装置
公开(公告)号：US07689028B2
公开(公告)日：2010-03-30
申请号：US10984932
申请日：2004-11-10
申请人： Shinji Sakano , Satoshi Harada
发明人： Shinji Sakano , Satoshi Harada
IPC分类号： G06K9/00
CPC分类号： G05B13/048 , G05B23/0254 , H01J37/32862
摘要： A method for predicting a processing result includes a process of performing a principal component analysis on a plurality of detected data obtained during a first standard processing, to construct a principal component analysis model; a process of obtaining residuals of the principal component analysis model as first residuals; a process of performing a second standard processing; and a process of obtaining a plurality of detected data from a plurality of detectors during the second standard processing. And, the detected data obtained during the second standard processing are applied to the principal component analysis model, to obtain second residuals. The method further includes a process of weighting the second residuals based on weighting references, and constructing a new multivariate analysis model with use of the weighted second residuals; and a process of predicting a processing result of the second standard processing with use of the multivariate analysis model.
摘要翻译：一种用于预测处理结果的方法包括对在第一标准处理期间获得的多个检测数据执行主成分分析的过程，以构建主成分分析模型; 获得主成分分析模型残差作为第一残差的过程; 执行第二标准处理的处理; 以及在第二标准处理期间从多个检测器获得多个检测数据的处理。并且，将在第二标准处理期间获得的检测数据应用于主成分分析模型，以获得第二残差。该方法还包括基于加权参考来加权第二残差的过程，以及使用加权的第二残差构建新的多变量分析模型; 以及使用多变量分析模型预测第二标准处理的处理结果的处理。

14. 发明授权

US06611638B2 High performance optical add/drop multiplexer and optical wavelength multiplexing network 失效
标题翻译：高性能光分插复用器和光波分复用网
公开(公告)号：US06611638B2
公开(公告)日：2003-08-26
申请号：US09942539
申请日：2001-08-30
申请人： Shinji Sakano
发明人： Shinji Sakano
IPC分类号： G02B628
CPC分类号： G02B6/2932 , G02B6/02057 , G02B6/29383 , H04J14/0206 , H04J14/0209 , H04J14/0213
摘要： In making use of an add/drop multiplexer for demultiplexing or multiplexing signal light of a few specific wavelengths from signal light subjected to optical wavelength multiplexing, a fiber bragg grating is excellent for enhancing rejection of a leakage of a demultiplexed light, but with respect to a high speed optical signal at the demultiplexing or multiplexing, a waveform deterioration occurs. When a dielectric multilayer film filter is used for dealing with the high speed optical signal, a plurality of filters are used to suppress a coherent cross talk, resulting in an increase of loss of pass-through light and an increase of costs. For a filter portion of at least demultiplexing part, a dielectric multilayer film filter which is short in an optical path and free from deterioration of a high speed optical signal is used, and for demultiplexed light leakage rejecting part between the demultiplexing part and the multiplexing part, a fiber bragg grating which is low in loss of pass-through light, is low in cost and is excellent in the rejection characteristics of filter light is used.
摘要翻译：在使用分散多路复用器来对经过光波长多路复用的信号光进行多路复用或复用几个特定波长的信号光的光纤布拉格光栅对于增强对解复用光的泄漏的抑制是非常好的，但是相对于在解复用或多路复用时的高速光信号发生波形恶化。当使用电介质多层膜滤波器来处理高速光信号时，使用多个滤波器来抑制相干串扰，导致通过光的损耗增加和成本的增加。对于滤波器使用至少解复用部分的部分，在光路中短路并且没有高速光信号劣化的电介质多层膜滤波器，并且在解复用部分和多路复用部分之间用于解复用的漏光拒绝部分，光纤通过光损失低的布拉格光栅成本低，使用滤光器的抑制特性优异。

15. 发明授权

US06173095B2 Optical fiber and method for coupling optical fibers 失效
标题翻译：光纤和耦合光纤的方法
公开(公告)号：US06173095B2
公开(公告)日：2001-01-09
申请号：US09311144
申请日：1999-05-13
申请人： Shinji Sakano
发明人： Shinji Sakano
IPC分类号： G02B626
CPC分类号： G02B6/262 , G02B6/3818
摘要： A single-mode optical fiber for outputting high-power light wherein a diameter of a mode field at an output end of the optical fiber is made large to thereby lower a light power density. Material higher in thermal conductivity or melting temperature than material of the optical fiber is coated on the end face of the fiber. A thickness of the coating film is set to cause light wavelength to be phase-shifted by ¼ of the wavelength to reduce reflection at the connecting end face. The same type of optical fiber is used as a party optical fiber to be connected therewith.
摘要翻译：一种用于输出大功率光的单模光纤，其中使光纤的输出端的模场的直径变大，从而降低光功率密度。导热性或熔融温度高于光纤材料的材料涂覆在纤维的端面上。将涂膜的厚度设定为使波长相对于波长的1/4来减少连接端面的反射。使用相同类型的光纤作为与其连接的聚光光纤。

16. 发明授权

US6078422A Optical amplifier unit control methods optical amplifier systems and systems which use the methods and amplifier systems 失效
标题翻译：光放大器单元控制方法采用光放大器系统和系统的方法和放大系统
公开(公告)号：US6078422A
公开(公告)日：2000-06-20
申请号：US978044
申请日：1997-11-25
申请人： Junya Kosaka , Shinji Sakano
发明人： Junya Kosaka , Shinji Sakano
IPC分类号： H01S3/10 , H01S3/06 , H01S3/067 , H01S3/13 , H04B10/079 , H04B10/2507 , H04B10/272 , H04B10/275 , H04B10/293 , H04B10/294 , H04B10/297 , H04B10/564 , H04B10/572 , H01S3/00 , H04B10/02
CPC分类号： H04B10/2912 , H01S3/1301 , H04B10/291 , H04B10/2931 , H01S3/10015
摘要： An optical amplifier controlling method and optical amplifier system which are simple in composition, maintain the S/N ratio of an optical signal output, have high control responsiveness, suppress the generation of a light surge, and amplify the optical signal, and a system using the method and amplifier system. The optical amplifier system includes an optical amplifier unit which is supplied with energy by pumping light and amplifies with the supplied energy an optical signal inputted to the amplifier unit. The optical amplifier system includes a gain control unit for controlling the gain of the amplifier system depending on the strength of the optical signal inputted to the amplifier system such that the amplifier has a maximum gain at a predetermined value of the strength of the optical signal inputted in the optical amplifier system and an area of a positive gain of not more than the maximum gain for a strength of the optical signal of not more than the predetermined value.
摘要翻译：一种组成简单，维持光信号输出的S / N比的光放大器控制方法和光放大器系统具有高控制响应性，抑制光浪涌的产生和放大光信号，以及使用该方法和放大器系统。光放大器系统包括光放大器单元，其通过泵浦光而被供能，并且以所提供的能量放大输入到放大器单元的光信号。光放大器系统包括增益控制单元，用于根据输入到放大器系统的光信号的强度来控制放大器系统的增益，使得放大器在输入的光信号的强度的预定值处具有最大增益在光放大器系统中，对于光信号强度不大于预定值的正增益不大于最大增益的区域。

17. 发明授权

US5930421A Optical fiber and method for coupling optical fibers 失效
标题翻译：光纤和耦合光纤的方法
公开(公告)号：US5930421A
公开(公告)日：1999-07-27
申请号：US822007
申请日：1997-03-24
申请人： Shinji Sakano
发明人： Shinji Sakano
IPC分类号： G02B6/24 , G02B6/02 , G02B6/26 , G02B6/38 , G02F1/35 , H04B10/25
CPC分类号： G02B6/262 , G02B6/3818
摘要： A single-mode optical fiber for outputting high-power light wherein a diameter of a mode field at an output end of the optical fiber is made large to thereby lower a light power density. Material higher in thermal conductivity or melting temperature than material of the optical fiber is coated on the end face of the fiber. A thickness of the coating film is set to cause light wavelength to be phase-shifted by 1/4 of the wavelength to reduce reflection at the connecting end face. The same type of optical fiber is used as a party optical fiber to be connected therewith.
摘要翻译：一种用于输出大功率光的单模光纤，其中使光纤的输出端的模场的直径变大，从而降低光功率密度。导热性或熔融温度高于光纤材料的材料涂覆在纤维的端面上。将涂膜的厚度设定为使波长相对于波长相差+ E，fra 1/4 + EE，以减少连接端面的反射。使用相同类型的光纤作为与其连接的聚光光纤。

18. 发明授权

US5574289A Semiconductor optical integrated device and light receiver using said device 失效
标题翻译：半导体光集成器件和使用该器件的光接收器
公开(公告)号：US5574289A
公开(公告)日：1996-11-12
申请号：US24084
申请日：1993-03-01
申请人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
发明人： Masahiro Aoki , Hirohisa Sano , Shinji Sakano , Makoto Suzuki , Makoto Takahashi , Kazuhisa Uomi , Tatemi Ido , Atsushi Takai
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/00 , H01S5/026 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343 , H01S5/40 , H01S5/50 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： B82Y20/00 , G02F1/01708 , H01L31/035236 , H01L33/0062 , H01S5/0265 , H01S5/227 , H01S5/34 , G02F2203/07 , H01S5/026 , H01S5/10 , H01S5/106 , H01S5/12 , H01S5/2272 , H01S5/3404 , H01S5/34306 , H01S5/34313 , H01S5/4068 , H01S5/5036
摘要： Disclosed is a semiconductor optical integrated device and method of fabricating the device, the device having a plurality of quantum well structures, formed on a single substrate, acting as optical waveguides, the plurality of quantum well structures respectively having different lattice mismatches with the substrate and/or different strains (e.g., respectively compressive strain and tensile strain). The method includes selectively depositing the quantum well structures by, e.g., organometallic vapor phase epitaxy on growth regions of the substrate, the growth regions being defined by insulating layer patterning masks, with a width of the growth regions and/or a width of the patterning mask being different for the different quantum well structures. Each quantum well structure includes quantum well layers of III-V or II-VI compound semiconductor material, the Group III or Group II elements each including at least two elements, one having a relatively large atomic diameter and another having a relatively small atomic diameter. Also disclosed is a light receiver that can independently absorb TE-mode and TM-mode light in series, which can be used in a polarized-wave diversity receiver for coherent optical communication.
摘要翻译：公开了一种制造该器件的半导体光学集成器件和方法，该器件具有多个量子阱结构，形成在单个衬底上，作为光波导，多个量子阱结构分别与衬底具有不同的晶格错配; /或不同的应变（例如，分别为压缩应变和拉伸应变）。该方法包括通过例如在衬底的生长区域上的有机金属气相外延选择性地沉积量子阱结构，生长区域由绝缘层图案化掩模限定，具有生长区域的宽度和/或图案化宽度掩模对于不同的量子阱结构是不同的。每个量子阱结构包括III-V或II-VI族化合物半导体材料的量子阱层，III族或II族元素各自包含至少两种元素，一种具有较大的原子直径，另一种具有较小的原子直径。还公开了可以独立地吸收串联的TE模式和TM模式光的光接收器，其可以用于用于相干光通信的偏振波分集接收器中。

19. 发明授权

US5177758A Semiconductor laser device with plural active layers and changing optical properties 失效
标题翻译：具有多个有源层和改变光学特性的半导体激光器件
公开(公告)号：US5177758A
公开(公告)日：1993-01-05
申请号：US803206
申请日：1991-12-06
申请人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
发明人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
IPC分类号： H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/10 , H01S5/06213 , H01S5/06256 , H01S5/1028 , H01S5/106 , H01S5/12 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.
摘要翻译：具有大波长可调范围的波长可调谐半导体激光器件或具有如在DBR激光器或DFB激光器的情况下包括衍射光栅的分布式反馈结构的非常高速调制的半导体激光器件包含多个的有源层彼此不同的组成元素或组成比或厚度以减小谱线宽度，同时改善单模光谱振荡特性。

20. 发明授权

US5113072A Device having superlattice structure, and method of and apparatus for manufacturing the same 失效
标题翻译：具有超级结构的装置及其制造方法和装置
公开(公告)号：US5113072A
公开(公告)日：1992-05-12
申请号：US597354
申请日：1990-10-10
申请人： Hiroshi Yamaguchi , Keiya Saito , Fumikazu Itoh , Koji Ishida , Shinji Sakano , Masao Tamura , Shoji Shukuri , Tohru Ishitani , Tsuneo Ichiguchi
发明人： Hiroshi Yamaguchi , Keiya Saito , Fumikazu Itoh , Koji Ishida , Shinji Sakano , Masao Tamura , Shoji Shukuri , Tohru Ishitani , Tsuneo Ichiguchi
IPC分类号： H01L21/20 , G01Q30/16 , G01Q60/44 , H01J37/08 , H01J37/305 , H01L21/203 , H01L21/205 , H01L21/263 , H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/338 , H01L21/822 , H01L21/8252 , H01L29/06 , H01L29/15 , H01L29/778 , H01L29/812
CPC分类号： H01J37/3056 , B82Y10/00 , H01J37/08 , H01L21/2633 , H01L21/26546 , H01L21/8221 , H01L21/8252 , H01L29/151 , Y10S148/046 , Y10S148/051 , Y10S148/084 , Y10S148/16 , Y10S438/962
摘要： Disclosed is an apparatus for forming a device having a fine structure, the apparatus including a high intensity ion source. The apparatus can be used to form fine grooves and/or a fine film, by supplying a reactive gas to the surface to be etched or coated while irradiating a focused ion beam on the surface. A laser or electron beam can be irradiated on substantially the same axis as that of the focused ion beam, whereby defects arising due to ion beam processing can be repaired. The apparatus can further include ion beam current detection and measurement structure to determine when a predetermined thickness of coating or depth of etching is achieved. The apparatus can include multiple chambers sequentially holding the surface treated, and can include a scanning electron microscope for scanning the surface being coated or etched.

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