专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20050170494A1 Structure, structure manufacturing method and sensor using the same 失效
标题翻译：结构，结构制造方法及使用其的传感器
公开(公告)号：US20050170494A1
公开(公告)日：2005-08-04
申请号：US11067661
申请日：2005-02-28
申请人： Atsushi Mukai
发明人： Atsushi Mukai
IPC分类号： C12M1/34 , G01N21/55 , G01N33/553
CPC分类号： G01N21/554
摘要： A plasmon resonance device 100 according to an example of a structure is characterized in that metallic particles 7 isolated from each other are formed in each of a plurality of pores 5 of anodic oxidized alumina 3. As a method of manufacturing the plasmon resonance device 100, a metal is coated on the anodic oxidized alumina 3 opening the pores 5 and a metal coated element provided on the opening surface of the pore in the anodic oxidized alumina 3 is removed. Consequently, metallic particles isolated from each other are formed in the respective independent pores. The plasmon resonance device 100 can be used as a sensor utilizing a localized plasmon resonance phenomenon.
摘要翻译：根据结构的实例的等离子体共振装置100的特征在于，在阳极氧化氧化铝3的多个孔5中形成彼此隔离的金属颗粒7.作为制造等离子体共振装置100的方法，将金属涂覆在阳极氧化的氧化铝3上，打开孔5，并且去除设置在阳极氧化氧化铝3中的孔的开口表面上的金属涂覆元件。因此，在各个独立的孔中形成彼此分离的金属颗粒。等离子体共振装置100可以用作利用局部等离子体共振现象的传感器。

12. 发明授权

US08415557B2 Photoelectric conversion device and solar cell using the photoelectric conversion device 失效
标题翻译：光电转换装置和使用光电转换装置的太阳能电池
公开(公告)号：US08415557B2
公开(公告)日：2013-04-09
申请号：US12718611
申请日：2010-03-05
申请人： Toshiaki Fukunaga , Atsushi Mukai
发明人： Toshiaki Fukunaga , Atsushi Mukai
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , C25D11/04 , H01L21/02568 , H01L21/02614 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L31/0322 , H01L31/03925 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photoelectric conversion device having a laminated structure includes: an anodized substrate constituted by a metal substrate mainly containing aluminum and an anodized film formed on the metal substrate; a lower electrode mainly containing molybdenum; a semiconductor photoelectric conversion layer generating current when absorbing light; an upper electrode; a metal supply layer being formed in contact with or inside the lower electrode, containing an alkali and/or alkaline earth metal element, and supplying the alkali and/or alkaline earth metal element to the photoelectric conversion layer during formation of the photoelectric conversion layer; and a diffusion barrier layer being conductive and formed between the anodized substrate and the metal supply layer in contact with the lower electrode and/or the metal supply layer or inside the lower electrode, and suppressing diffusion, into the anodized substrate, of the alkali and/or alkaline earth metal element from the metal supply layer.
摘要翻译：具有叠层结构的光电转换装置包括：由主要包含铝的金属基板和形成在金属基板上的阳极氧化膜构成的阳极氧化基板; 主要含钼的下电极; 在吸收光时产生电流的半导体光电转换层; 上电极; 金属供给层与下部电极接触或内部形成，含有碱金属和/或碱土金属元素，并且在形成光电转换层期间将碱金属和/或碱土金属元素供给到光电转换层; 并且扩散阻挡层导电并形成在与下电极和/或金属供应层或下电极内接触的阳极氧化基板和金属供给层之间，并且抑制阳极氧化的基板中的碱和 /或碱土金属元素。

13. 发明申请

US20120273034A1 METAL SUBSTRATE WITH INSULATION LAYER AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, SOLAR CELL AND MANUFACTURING METHOD THEREOF, ELECTRONIC CIRCUIT AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有绝缘层的金属基板及其制造方法，半导体器件及其制造方法，太阳能电池及其制造方法，电子电路及其制造方法及其发光元件及其制造方法
公开(公告)号：US20120273034A1
公开(公告)日：2012-11-01
申请号：US13520115
申请日：2011-02-02
申请人： Keigo Sato , Ryuichi Nakayama , Shigenori Yuya , Atsushi Mukai , Shinya Suzuki , Youta Miyashita
发明人： Keigo Sato , Ryuichi Nakayama , Shigenori Yuya , Atsushi Mukai , Shinya Suzuki , Youta Miyashita
IPC分类号： H01L21/31 , H01L33/44 , C25D5/00 , H01L31/02 , B32B15/01 , H05K3/00 , H05K7/04 , F21V21/00
CPC分类号： H01L31/0392 , C25D11/04 , C25D11/08 , C25D11/10 , C25D11/18 , H01L31/03926 , H05K1/053 , H05K2201/0116 , H05K2203/0315 , Y02E10/50 , Y10T29/49155 , Y10T428/12479
摘要： A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.
摘要翻译：具有绝缘层的金属基板包括至少具有铝基底的金属基底和形成在所述金属基底的所述铝基底上的绝缘层。绝缘层是铝的多孔型阳极氧化膜。阳极氧化膜包括阻挡层部分和多孔层部分，并且至少多孔层部分在室温下具有压缩应变。应变的大小范围为0.005％至0.25％。阳极氧化膜的厚度为3微米至20微米。

14. 发明申请

US20060055933A1 Sensor, method of analyzing a sample by the use of the sensor, sensor chip employed in the sensor, and method of manufacturing the sensor chip 失效
标题翻译：传感器，通过使用传感器分析样品的方法，传感器中使用的传感器芯片，以及制造传感器芯片的方法
公开(公告)号：US20060055933A1
公开(公告)日：2006-03-16
申请号：US11224279
申请日：2005-09-13
申请人： Atsushi Mukai
发明人： Atsushi Mukai
IPC分类号： G01N21/55
CPC分类号： G01N21/554
摘要： A sensor chip for use in a sensor for detecting the localized plasmon resonance state of a metal particle surface by light and analyzing properties of a sample present near metal particles. The sensor chip includes a support with a plurality of pits individually and independently formed in one surface thereof so that they extend toward an interior thereof, and metal particle rods respectively held in the plurality of pits so that an end surface of each rod is exposed at the one surface of the support and a longitudinal side surface of each rod is covered with the support.
摘要翻译：一种用于传感器的传感器芯片，用于通过光检测金属颗粒表面的局部等离子体共振状态并分析存在于金属颗粒附近的样品的性质。传感器芯片包括一个支撑体，多个凹坑在其一个表面中单独地且独立地形成，使得它们朝向其内部延伸，并且金属颗粒棒分别保持在多个凹坑中，使得每个杆的端表面暴露在支撑件的一个表面和每个杆的纵向侧表面被支撑件覆盖。

15. 发明授权

US06891620B2 Measuring plate 失效
标题翻译：测量板
公开(公告)号：US06891620B2
公开(公告)日：2005-05-10
申请号：US10288593
申请日：2002-11-06
申请人： Atsushi Mukai , Toshihito Kimura
发明人： Atsushi Mukai , Toshihito Kimura
IPC分类号： G01N21/03 , G01N21/25 , G01N21/27 , G01N21/41 , G02B5/04 , G02B17/08 , G01N21/55
CPC分类号： G01N21/253 , G01N21/553
摘要： A measuring plate for use in a sensor utilizing the phenomenon of attenuation in total internal reflection provides a dielectric block and a film layer and includes a dielectric plate provided with a plurality of recesses each provided with a film layer and holding a sample in contact with the film layer, and a reflecting optical system including a reflecting surface which is formed on the dielectric plate for each of the recesses to cause the light beam emitted from the light source to impinge upon the interface between the film layer of the recess and the dielectric plate and/or to cause the light beam reflected at the interface between the film layer of the recess and the dielectric plate to travel toward a predetermined position.
摘要翻译：用于传感器的测量板利用全内反射的衰减现象，提供介质块和薄膜层，并包括设有多个凹槽的电介质板，每个凹槽均设有一个薄膜层，并保持一个样品与膜层，以及反射光学系统，其包括形成在电介质板上的每个凹部的反射表面，以使得从光源发射的光束撞击在凹部的膜层和电介质板之间的界面和/或使在所述凹部的膜层与所述电介质板之间的界面处反射的光束朝向预定位置移动。

16. 发明授权

US07876987B2 Optical device and exposure apparatus 有权
标题翻译：光学装置和曝光装置
公开(公告)号：US07876987B2
公开(公告)日：2011-01-25
申请号：US12112474
申请日：2008-04-30
申请人： Atsushi Mukai , Shinichiro Sonoda
发明人： Atsushi Mukai , Shinichiro Sonoda
IPC分类号： G02B6/26
CPC分类号： G02B6/4206 , G02B6/4296 , G03F7/70025 , G03F7/70558 , G03F7/70916 , G03F7/70925
摘要： The present invention provides an optical device and an exposure apparatus capable of suppressing a reduction in light output. The optical device of the present invention includes a laser light source which emits laser light having a short wavelength (e.g., 160 to 500 nm), a lens, a transparent member and an optical fiber provided with a junction-inhibiting film. The optical device is configured such that light density of abutment faces between the transparent member and the optical fiber formed with the junction-inhibiting film is 4464 W/mm2 or less, thereby suppressing a reduction in light output which may be caused by fusion.
摘要翻译：本发明提供能够抑制光输出降低的光学装置和曝光装置。本发明的光学装置包括发射短波长（例如160〜500nm）的激光的激光光源，透镜，透明部件和配置有抑制结膜的光纤。光学装置被构造为使得透明构件和由结合抑制膜形成的光纤之间的邻接面的光密度为4464W / mm 2以下，从而抑制可能由熔融引起的光输出的降低。

17. 发明申请

US20100224249A1 PHOTOELECTRIC CONVERSION DEVICE AND SOLAR CELL USING THE PHOTOELECTRIC CONVERSION DEVICE 失效
标题翻译：光电转换装置和使用光电转换装置的太阳能电池
公开(公告)号：US20100224249A1
公开(公告)日：2010-09-09
申请号：US12718611
申请日：2010-03-05
申请人： Toshiaki Fukunaga , Atsushi Mukai
发明人： Toshiaki Fukunaga , Atsushi Mukai
IPC分类号： H01L31/00
CPC分类号： H01L31/0392 , C25D11/04 , H01L21/02568 , H01L21/02614 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L31/0322 , H01L31/03925 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A photoelectric conversion device having a laminated structure includes: an anodized substrate constituted by a metal substrate mainly containing aluminum and an anodized film formed on the metal substrate; a lower electrode mainly containing molybdenum; a semiconductor photoelectric conversion layer generating current when absorbing light; an upper electrode; a metal supply layer being formed in contact with or inside the lower electrode, containing an alkali and/or alkaline earth metal element, and supplying the alkali and/or alkaline earth metal element to the photoelectric conversion layer during formation of the photoelectric conversion layer; and a diffusion barrier layer being conductive and formed between the anodized substrate and the metal supply layer in contact with the lower electrode and/or the metal supply layer or inside the lower electrode, and suppressing diffusion, into the anodized substrate, of the alkali and/or alkaline earth metal element from the metal supply layer.
摘要翻译：具有叠层结构的光电转换装置包括：由主要包含铝的金属基板和形成在金属基板上的阳极氧化膜构成的阳极氧化基板; 主要含钼的下电极; 在吸收光时产生电流的半导体光电转换层; 上电极; 金属供给层与下部电极接触或内部形成，含有碱金属和/或碱土金属元素，并且在形成光电转换层期间将碱金属和/或碱土金属元素供给到光电转换层; 并且扩散阻挡层导电并形成在与下电极和/或金属供应层或下电极内接触的阳极氧化基板和金属供给层之间，并且抑制阳极氧化的基板中的碱和 /或碱土金属元素。

18. 发明授权

US07508043B2 Sensor for analyzing a sample by utilizing localized plasmon resonance 失效
标题翻译：用于通过利用局部等离子体共振来分析样品的传感器
公开(公告)号：US07508043B2
公开(公告)日：2009-03-24
申请号：US11224279
申请日：2005-09-13
申请人： Atsushi Mukai
发明人： Atsushi Mukai
IPC分类号： C25D11/04 , H01L31/0236 , G01N21/17
CPC分类号： G01N21/554
摘要： A sensor chip for use in a sensor for detecting the localized plasmon resonance state of a metal particle surface by light and analyzing properties of a sample present near metal particles. The sensor chip includes a support with a plurality of pits individually and independently formed in one surface thereof so that they extend toward an interior thereof, and metal particle rods respectively held in the plurality of pits so that an end surface of each rod is exposed at the one surface of the support and a longitudinal side surface of each rod is covered with the support.
摘要翻译：一种用于传感器的传感器芯片，用于通过光检测金属颗粒表面的局部等离子体共振状态并分析存在于金属颗粒附近的样品的性质。传感器芯片包括一个支撑体，多个凹坑在其一个表面中单独地且独立地形成，使得它们朝向其内部延伸，并且金属颗粒棒分别保持在多个凹坑中，使得每个杆的端表面暴露在支撑件的一个表面和每个杆的纵向侧表面被支撑件覆盖。

19. 发明授权

US07009706B2 Measuring chip 失效
标题翻译：测量芯片
公开(公告)号：US07009706B2
公开(公告)日：2006-03-07
申请号：US10318406
申请日：2002-12-13
申请人： Nobufumi Mori , Takeharu Tani , Atsushi Mukai
发明人： Nobufumi Mori , Takeharu Tani , Atsushi Mukai
IPC分类号： G01N21/55
CPC分类号： G01N21/553 , G01N21/552
摘要： A measuring chip comprising a dielectric block and a thin film layer formed on one surface of the dielectric block. The thin film layer is used for placing a sample thereon. The dielectric block is formed as a single block, which includes an entrance surface at which a light beam enters the dielectric block, an exit surface from which the light beam emerges, and the one surface on which the thin film layer is formed. In addition, the dielectric block is integrated with the thin film layer and formed from a resin whose photoelastic coefficient is less than 50×10−12 Pa−1.
摘要翻译：一种测量芯片，包括形成在介质块的一个表面上的介质块和薄膜层。薄膜层用于在其上放置样品。介质块形成为单个块，其包括光束入射到介质块的入射表面，出射表面以及形成有薄膜层的一个表面。此外，介电块与薄膜层成一体，并由光弹性系数小于50×10 -2 Pa -1的树脂形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式