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1. 发明授权

US08736029B2 Semiconductor apparatus 有权
标题翻译：半导体装置
公开(公告)号：US08736029B2
公开(公告)日：2014-05-27
申请号：US13552230
申请日：2012-07-18
申请人： Keigo Sato
发明人： Keigo Sato
IPC分类号： H01L29/02
CPC分类号： H01L29/404 , H01L29/0615 , H01L29/063 , H01L29/0638 , H01L29/1095 , H01L29/408 , H01L29/66348 , H01L29/7397
摘要： A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.
摘要翻译：半导体装置包括半导体基板。半导体衬底包括其中形成半导体器件的有源区和位于半导体衬底的有源区和边缘表面之间的周边区。包含导电粒子的第一绝缘层形成在周边区域的至少一部分的上方。通过以这种方式构造半导体装置，可以抑制周边区域中的高电场的产生。因此，能够提高半导体装置的耐压特性。

2. 发明申请

US20130105933A1 SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20130105933A1
公开(公告)日：2013-05-02
申请号：US13552230
申请日：2012-07-18
申请人： Keigo SATO
发明人： Keigo SATO
IPC分类号： H01L29/06
CPC分类号： H01L29/404 , H01L29/0615 , H01L29/063 , H01L29/0638 , H01L29/1095 , H01L29/408 , H01L29/66348 , H01L29/7397
摘要： A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.
摘要翻译：半导体装置包括半导体基板。半导体衬底包括其中形成半导体器件的有源区和位于半导体衬底的有源区和边缘表面之间的周边区。包含导电粒子的第一绝缘层形成在周边区域的至少一部分的上方。通过以这种方式构造半导体装置，可以抑制周边区域中的高电场的产生。因此，能够提高半导体装置的耐压特性。

3. 发明授权

US08676026B2 Data recording apparatus 有权
标题翻译：数据记录装置
公开(公告)号：US08676026B2
公开(公告)日：2014-03-18
申请号：US13338614
申请日：2011-12-28
申请人： Naoki Fujimoto , Hiroyuki Awano , Kengo Yasumura , Keigo Sato
发明人： Naoki Fujimoto , Hiroyuki Awano , Kengo Yasumura , Keigo Sato
IPC分类号： H04N5/77 , H04N5/917
CPC分类号： H04N5/772 , G11B27/322 , H04N9/7921 , H04N9/8205
摘要： A data recording apparatus includes an acquisition unit configured to acquire a first type data and a second type data, and a recording unit configured to record the first type data or the second type data acquired by the acquisition unit in a recording medium. The recording unit refers to a first pointer which indicates a logical position regarding the first type data in the recording medium to determine a position to start recording the first type data based on the logical position indicated by the first pointer. The recording unit refers to a second pointer which indicates a logical position regarding the second type data in the recording medium to determine a position to start recording the second type data based on the logical position indicated by the second pointer.
摘要翻译：数据记录装置包括获取单元，被配置为获取第一类型数据和第二类型数据，以及记录单元，被配置为将由获取单元获取的第一类型数据或第二类型数据记录在记录介质中。记录单元是指第一指针，其指示关于记录介质中的第一类型数据的逻辑位置，以基于由第一指针指示的逻辑位置来确定开始记录第一类型数据的位置。记录单元是指第二指示器，其指示关于记录介质中的第二类型数据的逻辑位置，以基于由第二指示符指示的逻辑位置来确定开始记录第二类型数据的位置。

4. 发明申请

US20120273034A1 METAL SUBSTRATE WITH INSULATION LAYER AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, SOLAR CELL AND MANUFACTURING METHOD THEREOF, ELECTRONIC CIRCUIT AND MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有绝缘层的金属基板及其制造方法，半导体器件及其制造方法，太阳能电池及其制造方法，电子电路及其制造方法及其发光元件及其制造方法
公开(公告)号：US20120273034A1
公开(公告)日：2012-11-01
申请号：US13520115
申请日：2011-02-02
申请人： Keigo Sato , Ryuichi Nakayama , Shigenori Yuya , Atsushi Mukai , Shinya Suzuki , Youta Miyashita
发明人： Keigo Sato , Ryuichi Nakayama , Shigenori Yuya , Atsushi Mukai , Shinya Suzuki , Youta Miyashita
IPC分类号： H01L21/31 , H01L33/44 , C25D5/00 , H01L31/02 , B32B15/01 , H05K3/00 , H05K7/04 , F21V21/00
CPC分类号： H01L31/0392 , C25D11/04 , C25D11/08 , C25D11/10 , C25D11/18 , H01L31/03926 , H05K1/053 , H05K2201/0116 , H05K2203/0315 , Y02E10/50 , Y10T29/49155 , Y10T428/12479
摘要： A metal substrate with an insulation layer includes a metal substrate having at least an aluminum base and an insulation layer formed on said aluminum base of said metal substrate. The insulation layer is a porous type anodized film of aluminum. The anodized film includes a barrier layer portion and a porous layer portion, and at least the porous layer portion has compressive strain at room temperature. a magnitude of the strain ranges from 0.005% to 0.25%. The anodized film has a thickness of 3 micrometers to 20 micrometers.
摘要翻译：具有绝缘层的金属基板包括至少具有铝基底的金属基底和形成在所述金属基底的所述铝基底上的绝缘层。绝缘层是铝的多孔型阳极氧化膜。阳极氧化膜包括阻挡层部分和多孔层部分，并且至少多孔层部分在室温下具有压缩应变。应变的大小范围为0.005％至0.25％。阳极氧化膜的厚度为3微米至20微米。

5. 发明申请

US20120163763A1 DATA RECORDING APPARATUS 有权
标题翻译：数据记录装置
公开(公告)号：US20120163763A1
公开(公告)日：2012-06-28
申请号：US13338614
申请日：2011-12-28
申请人： Naoki Fujimoto , Hiroyuki Awano , Kengo Yasumura , Keigo Sato
发明人： Naoki Fujimoto , Hiroyuki Awano , Kengo Yasumura , Keigo Sato
IPC分类号： H04N5/77
CPC分类号： H04N5/772 , G11B27/322 , H04N9/7921 , H04N9/8205
摘要： A data recording apparatus includes an acquisition unit configured to acquire a first type data and a second type data, and a recording unit configured to record the first type data or the second type data acquired by the acquisition unit in a recording medium. The recording unit refers to a first pointer which indicates a logical position regarding the first type data in the recording medium to determine a position to start recording the first type data based on the logical position indicated by the first pointer. The recording unit refers to a second pointer which indicates a logical position regarding the second type data in the recording medium to determine a position to start recording the second type data based on the logical position indicated by the second pointer.
摘要翻译：数据记录装置包括获取单元，被配置为获取第一类型数据和第二类型数据，以及记录单元，被配置为将由获取单元获取的第一类型数据或第二类型数据记录在记录介质中。记录单元是指第一指针，其指示关于记录介质中的第一类型数据的逻辑位置，以基于由第一指针指示的逻辑位置来确定开始记录第一类型数据的位置。记录单元是指第二指示器，其指示关于记录介质中的第二类型数据的逻辑位置，以基于由第二指示符指示的逻辑位置来确定开始记录第二类型数据的位置。

6. 发明申请

US20110193103A1 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING THE SEMICONDUCTOR DEVICE, SUBSTRATE FOR SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SUBSTRATE 审中-公开
标题翻译：半导体器件，用于制造半导体器件的方法，用于半导体元件的衬底和用于生产衬底的方法
公开(公告)号：US20110193103A1
公开(公告)日：2011-08-11
申请号：US13022234
申请日：2011-02-07
申请人： Keigo SATO , Shigenori YUUYA
发明人： Keigo SATO , Shigenori YUUYA
IPC分类号： H01L33/08 , H01L29/06 , H01L21/26
CPC分类号： H01L21/02381 , H01L21/324 , H01L27/1218 , H01L27/1262 , H01L29/78603
摘要： A semiconductor device is provided with a porous structure layer formed by silicone resin between a substrate and a semiconductor element. Alternatively, a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing at least one type of alkoxysilane selected from a group consisting of monoalkoxysilane, dialkoxysilane, and trialkoxysilane, and tetraalkoxysilane is provided between the substrate and the semiconductor element. As a further alternative, an adhesion layer formed by a compound obtained by hydrolyzing and condensing an alkoxysilane is provided on a resin substrate, and a porous layer having a density of 0.7 g/cm3 or less, formed by a compound obtained by hydrolyzing and condensing an alkoxysilane, is provided on the adhesion layer.
摘要翻译：半导体器件具有由硅树脂在衬底和半导体元件之间形成的多孔结构层。或者，通过将由单烷氧基硅烷，二烷氧基硅烷和三烷氧基硅烷组成的组中选择的至少一种烷氧基硅烷水解和缩合得到的化合物和四烷氧基硅烷形成的密度为0.7g / cm 3以下的多孔层，衬底和半导体元件。作为另外的替代方案，在树脂基板上设置由通过水解和缩合烷氧基硅烷获得的化合物形成的粘附层，并且通过水解和冷凝获得的化合物形成密度为0.7g / cm 3以下的多孔层在粘合层上设置有烷氧基硅烷。

7. 发明申请

US20110192451A1 METAL SUBSTRATE WITH INSULATION LAYER AND METHOD FOR MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：具有绝缘层的金属基板及其制造方法，半导体器件及其制造方法以及太阳能电池及其制造方法
公开(公告)号：US20110192451A1
公开(公告)日：2011-08-11
申请号：US13022364
申请日：2011-02-07
申请人： Keigo SATO , Ryuichi NAKAYAMA , Shigenori YUYA , Shinya SUZUKI , Shuji KANAYAMA
发明人： Keigo SATO , Ryuichi NAKAYAMA , Shigenori YUYA , Shinya SUZUKI , Shuji KANAYAMA
IPC分类号： H01L31/0216 , H01L23/58 , H01L21/31 , H01L33/44 , C25D11/04 , C25D11/06 , H01L31/04 , B23K31/02 , B23K20/02
CPC分类号： B23K20/04 , B23K2101/40 , C25D11/06 , C25D11/18 , H01L31/0392 , H01L31/03925 , H01L31/03928 , Y02E10/541 , Y02P70/521
摘要： A metal substrate with an insulation layer has a metallic substrate having at least an aluminum base, and an insulation layer formed on the aluminum base of the metallic substrate. The insulation layer is a anodized film of aluminum that has a porous structure having plural pores and a Martens hardness of 1000 N/mm2 to 3500 N/mm2. A ratio of an average pore size of the plural pores to an average wall thickness of the plural pores ranges from 0.2 to 0.5.
摘要翻译：具有绝缘层的金属基板具有至少具有铝基的金属基板和形成在金属基板的铝基底上的绝缘层。绝缘层是铝的阳极氧化膜，其具有多孔结构，具有多孔，马氏硬度为1000N / mm 2至3500N / mm 2。多个孔的平均孔径与多个孔的平均壁厚的比例为0.2〜0.5。

8. 发明授权

US5985858A Phosphonic diester derivatives 失效
标题翻译：膦酸二酯衍生物
公开(公告)号：US5985858A
公开(公告)日：1999-11-16
申请号：US91946
申请日：1998-06-26
申请人： Kazuyoshi Miyata , Yasuhiro Sakai , Yasuo Shoji , Yoshihiko Tsuda , Yasuhide Inoue , Keigo Sato , Shinya Miki
发明人： Kazuyoshi Miyata , Yasuhiro Sakai , Yasuo Shoji , Yoshihiko Tsuda , Yasuhide Inoue , Keigo Sato , Shinya Miki
IPC分类号： C07F9/6509 , C07F9/6539 , C07F9/6553 , C07F9/6558 , C07F9/6561 , A61K31/67 , A61K31/675
CPC分类号： C07F9/650964 , C07F9/6539 , C07F9/655345 , C07F9/65583 , C07F9/65586 , C07F9/6561
摘要： A phosphonic diester derivative represented by the following formula (1): ##STR1## wherein R.sup.1 represents a cycloalkyl group; a phenyl group which may have 1 to 3 substituents selected from the group consisting of a lower alkoxy group, a lower alkyl group, a halogen atom, a halogen-substituted lower alkyl group, a lower alkanoyl group, a nitro group, a benzoyl group, a cyano group, an N-lower alkylcarbamoyl group, an N-phenyl-lower alkylcarbamoyl group, an N-(halogen-substituted phenyl)carbamoyl group and an N,N-di-lower alkylcarbamoyl group; a 1,3,4-thiadiazol-2-yl group having a halogen-substituted lower alkyl group as a substituent; a thiazolyl group; a pyridyl group which may be substituted by a halogen atom; a benzothiazol-2-yl group having 1 to 2 lower alkoxy groups on the phenyl ring; or a 4,5-dihydrothieno[3,2-e]benzothiazol-2-yl group; R.sup.2 represents a hydrogen atom or a phenyl lower alkyl group; R.sup.3 and R.sup.4 each represents a lower alkyl group; and A represents a heterocyclic ring selected from the group consisting of a pyrazine ring, a thiophene ring and a phenyl-substituted thiazole ring; the derivative being of value as an agent for treating and preventing hyperlipidemia, diabetes and cataract, or as an antitumor agent.
摘要翻译： PCT No.PCT / JP96 / 03775第 371日期：1998年6月26日 102（e）日期1998年6月26日PCT 1996年12月24日PCT公布。公开号WO97 / 24360 PCT 日期：1997年7月10日由下式（1）表示的膦酸二酯衍生物：其中R1表示环烷基; 可以具有1〜3个选自低级烷氧基，低级烷基，卤素原子，卤素取代的低级烷基，低级烷酰基，硝基，苯甲酰基的取代基的苯基，氰基，N-低级烷基氨基甲酰基，N-苯基 - 低级烷基氨基甲酰基，N-（卤素取代的苯基）氨基甲酰基和N，N-二低级烷基氨基甲酰基; 具有卤素取代的低级烷基作为取代基的1,3,4-噻二唑-2-基; 噻唑基可被卤素原子取代的吡啶基; 在苯环上具有1至2个低级烷氧基的苯并噻唑-2-基; 或4,5-二氢噻吩并[3,2-e]苯并噻唑-2-基; R2表示氢原子或苯基低级烷基; R3和R4各自表示低级烷基; A表示选自吡嗪环，噻吩环和苯基取代的噻唑环的杂环; 该衍生物作为治疗和预防高脂血症，糖尿病和白内障或作为抗肿瘤剂的药剂是有价值的。

9. 发明申请

US20120305049A1 SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD 审中-公开
标题翻译：太阳能电池和太阳能电池制造方法
公开(公告)号：US20120305049A1
公开(公告)日：2012-12-06
申请号：US13574445
申请日：2011-01-18
申请人： Shigenori Yuya , Keigo Sato , Ryuichi Nakayama , Ryozo Kaito , Naoki Murakami
发明人： Shigenori Yuya , Keigo Sato , Ryuichi Nakayama , Ryozo Kaito , Naoki Murakami
IPC分类号： H01L31/042 , H01L31/18
CPC分类号： H01L31/0392 , H01L31/022441 , H01L31/0322 , H01L31/0323 , H01L31/03923 , H01L31/046 , Y02E10/541 , Y02P70/521
摘要： A solar cell of a module type in which thin-film solar cells having a light absorbing layer made of a compound semiconductor are joined in series on a single substrate. The substrate includes a base made of a ferritic stainless steel, an aluminum layer formed on at least one surface of the base, and an insulation layer having a porous structure obtained by anodizing a surface of the aluminum layer. The insulation layer exhibits compressive stress at room temperature.
摘要翻译：具有由化合物半导体构成的光吸收层的薄膜太阳能电池串联在一个基板上的模块型太阳能电池。衬底包括由铁素体不锈钢制成的基底，形成在基底的至少一个表面上的铝层，以及通过阳极氧化铝层的表面获得的具有多孔结构的绝缘层。绝缘层在室温下表现出压应力。

10. 发明授权

US5798344A Phosphonic ester derivatives of quinazolinones 失效
标题翻译：喹唑啉酮的膦酸酯衍生物
公开(公告)号：US5798344A
公开(公告)日：1998-08-25
申请号：US704740
申请日：1996-09-05
申请人： Yasuhisa Kuroki , Kazuyoshi Miyata , Yoshihiko Tsuda , Yasuhide Inoue , Jun Kanaya , Keigo Sato
发明人： Yasuhisa Kuroki , Kazuyoshi Miyata , Yoshihiko Tsuda , Yasuhide Inoue , Jun Kanaya , Keigo Sato
IPC分类号： C07F9/6512 , A61K31/675
CPC分类号： C07F9/65128
摘要： The invention provides a phosphonic diester derivative of the formula: ##STR1## wherein R.sup.1 -R.sup.7 are substituent groups, as defined in the specification. The derivatives according to the invention are useful as therapeutic or preventive compositions for hyperlipidemia, hypertension, and diabetes.
摘要翻译： PCT No.PCT / JP95 / 00303 Sec。 371日期：1996年9月5日 102（e）1996年9月5日PCT提交1995年2月27日PCT公布。第WO95 / 24410BC号公报日期1995年9月14日本发明提供下式的膦酸二酯衍生物：其中R 1 -R 7是如说明书中所定义的取代基。根据本发明的衍生物可用作高脂血症，高血压和糖尿病的治疗或预防组合物。

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