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    • 14. 发明授权
    • Semiconductor device having junction-termination structure of resurf type
    • 具有resurf型连接终端结构的半导体器件
    • US06765239B2
    • 2004-07-20
    • US10187369
    • 2002-07-02
    • Michiaki HiyoshiShigeru HasegawaNaoyuki InoueTatsuo Harada
    • Michiaki HiyoshiShigeru HasegawaNaoyuki InoueTatsuo Harada
    • H01L2974
    • H01L29/405H01L29/7395
    • A semiconductor device includes an active region with a main semiconductor device section, and a junction-termination region therearound. A first diffusion layer of a second conductivity type is formed in a surface of a first semiconductor layer of a first conductivity type, and extends from the active region into the junction-termination region. A second diffusion layer of the second conductivity type is formed in contact with the first diffusion layer, and extends in the junction-termination region. A first contact electrode is disposed in the active region and in contact with the first diffusion layer, and electrically connected to a first main electrode of the main semiconductor device section. A second contact electrode is disposed in the junction-termination region and in contact with the first diffusion layer, and surrounds the active region. A connection electrode electrically connects the first and second contact electrodes to each other.
    • 半导体器件包括具有主半导体器件部分的有源区和其周围的结终端区。 在第一导电类型的第一半导体层的表面中形成第二导电类型的第一扩散层,并且从有源区延伸到结终端区域。 形成与第一扩散层接触的第二导电类型的第二扩散层,并且在接合端子区域中延伸。 第一接触电极设置在有源区中并与第一扩散层接触,并且电连接到主半导体器件部分的第一主电极。 第二接触电极设置在接合端子区域中并且与第一扩散层接触并且围绕有源区域。 连接电极将第一和第二接触电极彼此电连接。
    • 15. 发明授权
    • Method of producing varied line-space diffraction gratings
    • 生产各种线间距衍射光栅的方法
    • US4690506A
    • 1987-09-01
    • US783363
    • 1985-10-03
    • Toshiaki KitaTatsuo Harada
    • Toshiaki KitaTatsuo Harada
    • B43L13/24G02B5/18
    • G02B5/1852B43L13/24Y10S359/90
    • In a method of producing diffraction gratings by feeding either one of a blank or a groove-ruling tool by an amount consisting of the amount of constant transference and the amount of variable transference that is added thereto, or subtracted therefrom, while reciprocally moving the other one of said blank or said groove-ruling tool, in order to rule grooves of irregular intervals on said blank, a method of producing varied line-space diffraction gratings wherein the region of ruling is divided into a plurality of small regions so that the difference between a maximum value and a minimum value of distance between grooves becomes smaller than a predetermined value, and the amount of constant transference is set to the nearly equal to an average distance between grooves in each of said small regions.
    • 在制造衍射光栅的方法中,通过将坯料或凹槽划线工具中的任一个进给到由常数转移量和添加到其中的可变转移量或从其中减去的量,同时使另一个 所述坯料或所述凹槽划线工具中的一个,以便规定所述坯件上的不规则间隔的凹槽,制造不同的线间距衍射光栅的方法,其中刻划区域被划分成多个小区域,使得差异 在凹槽之间的最大值和最小距离之间变得小于预定值,并且恒定移动量被设置为几乎等于每个所述小区域中的凹槽之间的平均距离。
    • 18. 发明授权
    • Semiconductor device
    • 半导体器件
    • US07750438B2
    • 2010-07-06
    • US12356891
    • 2009-01-21
    • Tatsuo Harada
    • Tatsuo Harada
    • H01L29/70
    • H01L29/7395H01L29/0834
    • An n-type buffer region 6 is arranged between an n− drift region 1 and a p-type collector region 7, and has a higher impurity concentration than n− drift region 1 Assuming that α represents the ratio (WTA/WTB) between WTA expressed as: WTA = 2 ⁢ ɛ s ⁢ ɛ 0 ⁢ V qNd and the thickness WTB of the drift region held between the base region and the buffer region, the ratio (DC/DB) of the net dose DC of the collector region with respect to the net dose DB of the buffer region is at least α. Thus, a semiconductor device capable of ensuring a proper margin of SCSOA resistance can be obtained.
    • n型缓冲区域6布置在n漂移区域1和p型集电极区域7之间,并且具有比n-漂移区域1更高的杂质浓度。假设α表示WTA之间的比率(WTA / WTB) 表示为:WTA =2εsε0 V qNd,保持在基极区域和缓冲区域之间的漂移区域的厚度WTB,集电极区域的净剂量DC的比(DC / DB)与 相对于缓冲区域的净剂量DB至少为α。 因此,可以获得能够确保SCSOA电阻的适当余量的半导体器件。
    • 20. 发明授权
    • Laser beam scanning system
    • 激光束扫描系统
    • US4455485A
    • 1984-06-19
    • US324791
    • 1981-11-25
    • Sumio HosakaTatsuo HaradaAkihiro Takanashi
    • Sumio HosakaTatsuo HaradaAkihiro Takanashi
    • H01S3/00G02B26/10G02F1/33G03F7/20H01J3/14
    • G03F7/704G02B26/108G02F1/33
    • A laser beam scanning system for focusing a laser beam to a fine spot and for scanning precisely a large field includes an acousto-optical deflector enabled to deflect a laser beam in the direction of one axis or in the directions of two axes, while maintaining the fine spot diameter, to scan a small field, a relay lens for projecting said deflection point to the center of an objective lens, to effect the focusing of the beam to a fine spot, a high speed carriage enabled to move with high accuracy in biaxial directions, a precise position detector enabled to detect the position of the carriage, and a controller for organically controlling the aforementioned respective functions thereby to make it possible to precisely deflect the laser beam over a large field, whereby a scanning operation of a large field at a high speed and with a high accuracy is performed by the laser beam.
    • 用于将激光束聚焦到细小点并且精确地扫描大场的激光束扫描系统包括能够使激光束沿着一个轴线或两个轴线的方向偏转的声光偏转器,同时保持 精细直径,扫描小场,用于将所述偏转点投影到物镜中心的中继透镜,以实现将光束聚焦到细微点,能够以双轴向高精度移动的高速滑架 方向,能够检测托架的位置的精确位置检测器和用于有机地控制上述各个功能的控制器,从而使得可以在大场上精确地偏转激光束,由此大场的扫描操作 通过激光束执行高速度和高精度。