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11. 发明申请

US20060163489A1 SOURCE ARC CHAMBER FOR ION IMPLANTER HAVING REPELLER ELECTRODE MOUNTED TO EXTERNAL INSULATOR 有权
标题翻译：具有安装在外部绝缘体上的转子电极的离子植绒的源室
公开(公告)号：US20060163489A1
公开(公告)日：2006-07-27
申请号：US11044659
申请日：2005-01-27
申请人： Russell Low , Eric Cobb , Joseph Olson , Leo Klos
发明人： Russell Low , Eric Cobb , Joseph Olson , Leo Klos
IPC分类号： H01J27/00
CPC分类号： H01J27/08
摘要： An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
摘要翻译：离子注入机具有源电弧室，该电弧室包括在电弧室的排斥端处的导电端壁，端壁具有围绕开口的中心部分。陶瓷绝缘体固定在端壁的外表面上，例如通过外周螺纹与端壁的凹陷区域的周边处的配合螺纹啮合。导电排斥器具有固定到绝缘体并延伸通过端壁开口的窄轴，以及设置在源弧室内与主体壁相邻的主体。端壁，绝缘体和推斥器构造成在端壁的中心部分与（i）推斥体之间形成连续的真空间隙，（ii）推斥轴，和（iii）绝缘体。绝缘体内表面可以具有脊状横截面。

12. 发明申请

US20060240651A1 Methods and apparatus for adjusting ion implant parameters for improved process control 审中-公开
标题翻译：用于调整离子注入参数以改进过程控制的方法和设备
公开(公告)号：US20060240651A1
公开(公告)日：2006-10-26
申请号：US11114593
申请日：2005-04-26
申请人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
发明人： Anthony Renau , Dennis Rodier , Joseph Olson , Bret Adams
IPC分类号： H01L21/425
CPC分类号： H01L22/20
摘要： A method for processing a substrate, such as a semiconductor wafer, includes performing a measurement to determine a substrate parameter distribution to be compensated, determining an adjusted implant parameter distribution to compensate for the substrate parameter distribution, and implanting the substrate in accordance with the adjusted implant parameter distribution. The substrate parameter distribution to be compensated may result from another process step and may be uniform or non-uniform. In another embodiment, an implant parameter may be varied as a function of implant position on the substrate to achieve different substrate parameter values in different areas of the substrate.
摘要翻译：用于处理诸如半导体晶片的衬底的方法包括执行测量以确定要补偿的衬底参数分布，确定调整的植入参数分布以补偿衬底参数分布，以及根据所调整的衬底参数分布来植入衬底植入参数分布。要补偿的衬底参数分布可以由另一个工艺步骤产生，并且可以是均匀的或不均匀的。在另一个实施例中，植入参数可以作为衬底上的植入位置的函数而变化，以在衬底的不同区域中实现不同的衬底参数值。

13. 发明申请

US20060169915A1 Ion source configuration for production of ionized clusters, ionized molecules and ionized mono-atoms 有权
标题翻译：用于生产离子簇，离子化分子和离子化单原子的离子源配置
公开(公告)号：US20060169915A1
公开(公告)日：2006-08-03
申请号：US11269033
申请日：2005-11-08
申请人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
发明人： Joseph Olson , Anthony Renau , Donna Smatlak , Kurt Deckerlucke , Paul Murphy , Alexander Perel , Russell Low , Peter Kurunczi
IPC分类号： H01L21/336 , H01J27/00
CPC分类号： H01J37/08 , H01J27/08 , H01J2237/0812 , H01J2237/082 , H01J2237/0825 , H01J2237/0827 , H01J2237/31701
摘要： Ion sources and methods for generating molecular ions in a cold operating mode and for generating atomic ions in a hot operating mode are provided. In some embodiments, first and second electron sources are located at opposite ends of an arc chamber. The first electron source is energized in the cold operating mode, and the second electron source is energized in the hot operating mode. In other embodiments, electrons are directed through a hole in a cathode in the cold operating mode and are directed at the cathode in the hot operating mode. In further embodiments, an ion beam generator includes a molecular ion source, an atomic ion source and a switching element to select the output of one of the ion sources.
摘要翻译：提供了用于在冷操作模式中产生分子离子并用于在热操作模式中产生原子离子的离子源和方法。在一些实施例中，第一和第二电子源位于电弧室的相对端。第一电子源在冷操作模式下通电，并且第二电子源在热操作模式下通电。在其他实施例中，电子以冷操作模式被引导通过阴极中的孔，并且在热操作模式中被引导到阴极。在另外的实施例中，离子束发生器包括分子离子源，原子离子源和用于选择一个离子源的输出的开关元件。

14. 发明申请

US20060145095A1 Methods and apparatus for ion implantation with control of incidence angle by beam deflection 审中-公开
标题翻译：离子注入的方法和装置，通过光束偏转控制入射角
公开(公告)号：US20060145095A1
公开(公告)日：2006-07-06
申请号：US11027371
申请日：2004-12-30
申请人： Joseph Olson , Anthony Renau
发明人： Joseph Olson , Anthony Renau
IPC分类号： H01J37/08
CPC分类号： H01J37/3171
摘要： A method for implanting ions into a workpiece, such as a semiconductor wafer, includes generating an ion beam, providing a workpiece support surface to support a workpiece during ion implantation, deflecting the ion beam to provide a desired incidence angle of the deflected ion beam relative to the workpiece support surface, and performing an implant with the ion beam deflected at the desired incidence angle relative to the workpiece support surface. The incidence angle may be measured, and the beam deflection may be adjusted based on a comparison of the measured incidence angle and the desired incidence angle.
摘要翻译：用于将离子注入到诸如半导体晶片的工件中的方法包括产生离子束，在离子注入期间提供工件支撑表面以支撑工件，偏转离子束以提供偏转的离子束相对的期望入射角并且以相对于工件支撑表面以期望的入射角偏转的离子束来执行植入。可以测量入射角，并且可以基于测量的入射角和期望的入射角的比较来调整光束偏转。

15. 发明申请

US20050194550A1 Gas flow restricting cathode system for ion implanter and related method 有权
标题翻译：用于离子注入机的气流限制阴极系统及相关方法
公开(公告)号：US20050194550A1
公开(公告)日：2005-09-08
申请号：US10794850
申请日：2004-03-05
申请人： Russell Low , Joseph Olson , Curt Bergeron , Eric Cobb , Jeffrey Burgess
发明人： Russell Low , Joseph Olson , Curt Bergeron , Eric Cobb , Jeffrey Burgess
IPC分类号： H01J37/08
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/061 , H01J2237/06308 , H01J2237/082
摘要： A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.
摘要翻译：一种具有阴极元件的阴极系统，其被配置为延伸穿过离子注入系统的电弧室的壁中的孔。通过限制部件限制通过阴极元件和孔之间的间隔的气流。还提供了一种电离源气体和结合有限制构件的阴极元件的方法。

16. 发明授权

US08590485B2 Small form factor plasma source for high density wide ribbon ion beam generation 有权
标题翻译：用于高密度宽带离子束产生的小尺寸等离子体源
公开(公告)号：US08590485B2
公开(公告)日：2013-11-26
申请号：US12767125
申请日：2010-04-26
申请人： Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
发明人： Costel Biloiu , Jay Scheuer , Joseph Olson , Frank Sinclair , Daniel Distaso
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/08 , H01J27/16 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H05H1/30
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.
摘要翻译：公开了一种能够利用电感耦合等离子体生产产生高密度宽带状离子束的离子源。与常规ICP源相反，本公开描述了不是圆柱形的ICP源。相反，源被限定为使得其宽度（其是提取梁的尺寸）大于其高度。可以定义源的深度以最大化从天线到等离子体的能量传递。在另一个实施例中，围绕ICP源的多谐振磁场用于进一步增加电流密度并提高所提取的离子束的均匀性。离子束均匀性也可以通过几个独立的控制来控制，包括气体流速和输入射频功率。

17. 发明授权

US07547460B2 Ion implanter optimizer scan waveform retention and recovery 有权
标题翻译：离子注入机优化器扫描波形保留和恢复
公开(公告)号：US07547460B2
公开(公告)日：2009-06-16
申请号：US09950939
申请日：2001-09-12
申请人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
发明人： Antonella Cucchetti , Joseph Olson , Gregory Gibilaro , Rosario Mollica
IPC分类号： C23C14/54 , C23C14/48
CPC分类号： H01J37/3171 , H01J37/1474 , H01J2237/3045
摘要： Methods and apparatus are provided for controlling dose uniformity in an ion implantation system. According to one embodiment of the invention, an initial scan waveform is adjusted to obtain a desired uniformity for use in a first implant process, and the adjusted scan waveform is stored. The stored scan waveform is recalled and used in a second implant process. According to a another embodiment of the invention, desired beam parameters are identified and, based on the desired beam parameters, a stored scan waveform is recalled for use in a uniformity adjustment process, and the uniformity adjustment process is performed. According to a further embodiment of the invention, an apparatus is provided that includes a beam profiler for measuring a current distribution of a scanned ion beam. The apparatus also includes a data acquisition and analysis unit for adjusting an initial scan waveform based on a desired current distribution and the measured current distribution for use in a first implant process, storing the adjusted scan waveform, recalling the stored scan waveform, and using the recalled scan waveform in a second implant process.
摘要翻译：提供了用于控制离子注入系统中的剂量均匀性的方法和装置。根据本发明的一个实施例，调整初始扫描波形以获得在第一注入过程中使用的所需均匀性，并且存储经调整的扫描波形。存储的扫描波形在第二次注入过程中被调用并使用。根据本发明的另一实施例，识别期望的波束参数，并且基于期望的波束参数，调用存储的扫描波形以用于均匀性调整处理，并且执行均匀性调整处理。根据本发明的另一实施例，提供了一种装置，其包括用于测量扫描离子束的电流分布的光束轮廓仪。该装置还包括数据采集和分析单元，用于基于期望的电流分布和所测量的电流分布来调整初始扫描波形，以用于第一注入过程，存储经调整的扫描波形，调用所存储的扫描波形，并使用在第二次植入过程中调用扫描波形。

18. 发明申请

US20060289798A1 Methods & apparatus for ion beam angle measurement in two dimensions 有权
标题翻译：二维离子束角度测量方法与装置
公开(公告)号：US20060289798A1
公开(公告)日：2006-12-28
申请号：US11336466
申请日：2006-01-20
申请人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
发明人： James Cummings , Joseph Olson , Arthur Clough , Eric Hermanson , Rosario Mollica , Paul Murphy , Mark Donahue
IPC分类号： H01J37/08
CPC分类号： H01J37/244 , G01B15/00 , H01J37/304 , H01J37/3171 , H01J2237/2446 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31701 , H01J2237/31703
摘要： An angle measurement system for an ion beam includes a flag defining first and second features, wherein the second feature has a variable spacing from the first feature, a mechanism to translate the flag along a translation path so that the flag intercepts at least a portion of the ion beam, and a sensing device to detect the ion beam for different flag positions along the translation path and produce a sensor signal in response to the detected ion beam. The sensor signal and corresponding positions of the flag are representative of a vertical beam angle of the ion beam in a vertical plane. The sensing device may include a mask and a mechanism to translate the mask in order to define a beam current sensor on a portion of an associated Faraday sensor.
摘要翻译：用于离子束的角度测量系统包括限定第一和第二特征的标志，其中第二特征具有与第一特征可变的间隔，沿着平移路径平移标记的机构，使得标记截取至少一部分离子束和感测装置，用于检测沿着平移路径的不同标志位置的离子束，并响应于检测到的离子束产生传感器信号。传感器信号和标志的对应位置代表离子束在垂直平面中的垂直波束角。感测装置可以包括掩模和用于平移掩模以便在相关法拉第传感器的一部分上限定束流传感器的机构。

19. 发明申请

US20060208202A1 Technique for ion beam angle spread control 有权
标题翻译：离子束角扩散控制技术
公开(公告)号：US20060208202A1
公开(公告)日：2006-09-21
申请号：US11145949
申请日：2005-06-07
申请人： Atul Gupta , Joseph Olson
发明人： Atul Gupta , Joseph Olson
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/304 , H01J37/1477 , H01J37/3171 , H01J2237/1507 , H01J2237/3045 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L21/26586
摘要： A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
摘要翻译：公开了一种用于离子束角度扩展控制的技术。在一个特定的示例性实施例中，该技术可以被实现为用于离子束角度扩展控制的方法。该方法可以包括以两个或更多个不同的入射角度在衬底表面处引导一个或多个离子束，从而将衬底表面暴露于受控的离子束入射角扩散。

20. 发明申请

US20050263721A1 Uniformity control using multiple tilt axes, rotating wafer and variable scan velocity 有权
标题翻译：使用多个倾斜轴，旋转晶片和可变扫描速度的均匀性控制
公开(公告)号：US20050263721A1
公开(公告)日：2005-12-01
申请号：US11021420
申请日：2004-12-23
申请人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
发明人： Anthony Renau , Joseph Olson , Donna Smatlak , Jun Lu
IPC分类号： G21K5/10 , H01J37/08
CPC分类号： H01J37/3023 , H01J37/304 , H01J37/3171 , H01J2237/20214 , H01J2237/31703 , H01L21/265
摘要： A system, method and program product for enhancing dose uniformity during ion implantation are disclosed. The present invention is directed to allowing the use of an at least partially untuned ion beam to obtain a uniform implant by scanning the beam in multiple rotationally-fixed orientations (scan directions) of the target at variable or non-uniform scan velocities. The non-uniform scan velocities are dictated by a scan velocity profile that is generated based on the ion beam profile and/or the scan direction. The beam can be of any size, shape or tuning. A platen holding a wafer is rotated to a new desired rotationally-fixed orientation after a scan, and a subsequent scan occurs at the same scan velocity profile or a different scan velocity profile. Also included is a method, system and program product for conducting a uniform dose ion implantation in which the target is rotated and tilted about greater than one axes relative to the ion beam.
摘要翻译：公开了一种用于在离子注入期间增强剂量均匀性的系统，方法和程序产品。本发明旨在允许使用至少部分未经调制的离子束以可变或不均匀的扫描速度扫描靶的多个旋转固定取向（扫描方向）来获得均匀的注入。不均匀的扫描速度由基于离子束分布和/或扫描方向产生的扫描速度分布决定。光束可以是任何尺寸，形状或调谐。在扫描之后，保持晶片的压板旋转到新的期望的旋转固定取向，并且随后的扫描以相同的扫描速度分布或不同的扫描速度分布发生。还包括用于进行均匀剂量离子注入的方法，系统和程序产品，其中靶相对于离子束旋转并且倾斜大于大于一个轴。

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