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11. 发明授权

US08578582B2 Method of demolishing furnace of multilayered-refractory structure 有权
$Method of demolishing furnace of multilayered-refractory structure$
标题翻译：多层耐火结构炉体拆除方法
公开(公告)号：US08578582B2
公开(公告)日：2013-11-12
申请号：US13391113
申请日：2010-06-25
申请人： Kazumi Kurayoshi , Ryo Kato , Katsumi Mori , Yoshihito Doi
发明人： Kazumi Kurayoshi , Ryo Kato , Katsumi Mori , Yoshihito Doi
IPC分类号： B23P19/00
CPC分类号： F27D1/1694 , C21B7/06 , C21B9/04 , C21B9/06 , Y02P10/212 , Y10T29/4935 , Y10T29/49352 , Y10T29/49721 , Y10T29/49726 , Y10T29/4973 , Y10T29/49815 , Y10T29/49819 , Y10T29/49822
摘要： A method for dismantling a furnace having a multilayered refractory structure including: a furnace shell; a containing layer that is formed of a containing refractory that contains asbestos, and covers the inner side of the furnace shell; and a multilayered non-containing layer that is formed of a non-containing refractory that contains no asbestos, and covers the inner side of the containing layer, the method includes: a primary dismantling process; and a secondary dismantling process conducted after the primary dismantling process. In the primary dismantling process, the non-containing layer is dismantled from a furnace-core side thereof but the containing layer and at least one layer of the layers forming the non-containing layer, which is in contact with the containing layer, are left as a remnant. In the secondary dismantling process, the remnant is dismantled while asbestos measures are implemented.
摘要翻译：一种用于拆卸具有多层耐火结构的炉的方法，包括：炉壳; 由含有石棉的含有耐火材料形成并覆盖炉壳的内侧的容纳层; 以及由含有不含石棉的不含有耐火材料形成并且覆盖所述含有层的内侧的多层非含水层，所述方法包括：主要拆解工序; 并在主要拆解过程之后进行二次拆除。在主要的拆除过程中，从其炉芯侧拆下非含水层，但是留下与含有层接触的含有层和至少一层形成不含层的层作为残余物。在二次拆除过程中，残余物被拆除，石棉措施得到实施。

12. 发明授权

US08333908B2 Fluorine insolubilizers and methods of producing same 有权
标题翻译：氟不溶菌剂及其生产方法
公开(公告)号：US08333908B2
公开(公告)日：2012-12-18
申请号：US13100480
申请日：2011-05-04
申请人： Masamoto Tafu , Tetsuji Chohji , Takeshi Toshima , Takumi Fujita , Hirokazu Nakano , Ichiro Morioka , Katsumi Mori , Makoto Maeda , Kazumasa Takenaka
发明人： Masamoto Tafu , Tetsuji Chohji , Takeshi Toshima , Takumi Fujita , Hirokazu Nakano , Ichiro Morioka , Katsumi Mori , Makoto Maeda , Kazumasa Takenaka
IPC分类号： C09K3/00 , B09B3/00 , F23D14/00 , F23G5/00 , F23G7/00
CPC分类号： A62D3/33 , A62D2101/22 , A62D2101/49
摘要： A fluorine insolubilizer capable of sufficiently insolubilizing fluorine within a short time contains calcium hydrogen phosphate dihydrate in an amount of 95-40 mass % and hydroxy or hydroxyl apatite in an amount of 5-60 mass % for a total of 100 mass %.
摘要翻译：能够在短时间内使氟充分溶解的氟不溶物含有95〜40质量％的磷酸氢钙二水合物和总计100质量％的5-60质量％的羟基或羟基磷灰石。

13. 发明申请

US20110272638A1 FLUORINE INSOLUBILIZERS AND METHODS OF PRODUCING SAME 有权
标题翻译：氟化物不溶物及其生产方法
公开(公告)号：US20110272638A1
公开(公告)日：2011-11-10
申请号：US13100480
申请日：2011-05-04
申请人： Masamoto Tafu , Tetsuji Chohji , Takeshi Toshima , Takumi Fujita , Hirokazu Nakano , Ichiro Morioka , Katsumi Mori , Makoto Maeda , Kazumasa Takenaka
发明人： Masamoto Tafu , Tetsuji Chohji , Takeshi Toshima , Takumi Fujita , Hirokazu Nakano , Ichiro Morioka , Katsumi Mori , Makoto Maeda , Kazumasa Takenaka
IPC分类号： C09K3/00
CPC分类号： A62D3/33 , A62D2101/22 , A62D2101/49
摘要： A fluorine insolubilizer capable of sufficiently insolubilizing fluorine within a short time contains calcium hydrogen phosphate dihydrate in an amount of 95-40 mass % and apatite hydroxide in an amount of 5-60 mass % for a total of 100 mass %.
摘要翻译：能够在短时间内使氟充分溶解的氟不溶物含有95〜40质量％的磷酸氢钙二水合物和磷灰石氢氧化物，总量为100质量％，为5-60质量％。

14. 发明授权

US07730875B2 Flow control valve 失效
标题翻译：流量控制阀
公开(公告)号：US07730875B2
公开(公告)日：2010-06-08
申请号：US11234290
申请日：2005-09-26
申请人： Katsumi Mori , Hiroto Fujii , Nobuhiro Akashi
发明人： Katsumi Mori , Hiroto Fujii , Nobuhiro Akashi
IPC分类号： F02M57/02 , F16K31/02
CPC分类号： F16K31/0668 , F02M59/34 , F02M59/366 , F02M63/0017 , F02M63/004 , F02M63/0225 , F16K3/262 , F16K31/0648
摘要： A spool valve is movably provided in a valve sliding space of a valve casing. The spool valve has a through-hole formed in the inside thereof, and a communication port formed in the spool valve is operatively communicated with a fluid port for controlling an opening area of the fluid port by moving within the valve sliding space. Multiple circular oil grooves are formed at an outer peripheral surface of the spool valve, into which high pressure fluid is supplied so that the spool valve can be smoothly moved in the valve sliding space.
摘要翻译：滑阀可移动地设置在阀壳体的阀滑动空间中。滑阀具有在其内部形成的通孔，形成在滑阀中的连通口与流体端口可操作地连通，用于通过在阀滑动空间内移动来控制流体端口的开口面积。在滑阀的外周面上形成有多个圆形的油槽，供给高压流体使滑阀能够在阀滑动空间中平稳地移动。

15. 发明申请

US20080045000A1 Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium 有权
标题翻译：半导体装置及其制造方法，掩模数据生成方法，掩模和计算机可读记录介质
公开(公告)号：US20080045000A1
公开(公告)日：2008-02-21
申请号：US11893228
申请日：2007-08-15
申请人： Katsumi Mori , Kei Kawahara , Yoshikazu Kasuya
发明人： Katsumi Mori , Kei Kawahara , Yoshikazu Kasuya
IPC分类号： H01L21/4763
CPC分类号： H01L27/0207 , G06F17/5077 , G06F17/5081 , H01L21/76816 , H01L21/76819 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L2924/0002 , Y10S438/926 , H01L2924/00
摘要： A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row direction, and first virtual linear lines L1 extending in a direction traversing the row direction. The row direction and the first virtual linear lines L1 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the first virtual linear lines L1. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines L2 extending in a direction traversing the column direction. The column direction and the second virtual linear lines L2 define an angle of 2-40 degrees, and the dummy wiring layers 32 are disposed in a manner to be located on the second virtual linear lines L2.
摘要翻译：半导体器件具有设置在与第一布线层30相同的层上的第一布线层30和多个伪布线层32。半导体器件限定行方向，并且在沿着行方向的方向上延伸的第一虚拟线性线L 1。行方向和第一虚拟线性线L 1限定为2-40度的角度，虚拟布线层32以位于第一假想线状线L 1上的方式配置。半导体器件还限定垂直于行方向的列方向，以及在沿着列方向的方向上延伸的第二虚拟线性线L 2。列方向和第二虚拟线性线L 2限定为2-40度的角度，并且虚设布线层32以位于第二虚拟线性线L 2上的方式设置。

16. 发明申请

US20060169251A1 Fuel supply device 有权
标题翻译：燃油供应装置
公开(公告)号：US20060169251A1
公开(公告)日：2006-08-03
申请号：US11329106
申请日：2006-01-11
申请人： Katsumi Mori , Akihiro Kuroda
发明人： Katsumi Mori , Akihiro Kuroda
IPC分类号： F02M57/02
CPC分类号： F02M37/22 , F02M37/0047 , F02M59/34 , F02M63/0225 , F02M2037/226
摘要： A fuel filter is located downstream of a feed pump to filter fuel discharged from the feed pump. An orifice is located between the fuel filter and a suction quantity control valve to restrict a flow rate of the fuel passing through the fuel filter. A positive pressure of the feed pump is applied to the fuel filter, and a passing pressure at the fuel filter increases. Even if viscosity of the fuel increases and the fuel becomes wax-like at low temperature, clogging of the fuel filter or an insufficient flow rate can be inhibited. The orifice restricts the flow rate of the fuel passing through the fuel filter. Accordingly, an increase in size of the fuel filter can be prevented even if the fuel filter is located downstream of the feed pump.
摘要翻译：燃料过滤器位于进料泵的下游，以过滤从进料泵排出的燃料。在燃料过滤器和抽吸量控制阀之间设有孔口，以限制通过燃料过滤器的燃料的流量。供给泵的正压被施加到燃料过滤器，并且燃料过滤器上的通过压力增加。即使燃料的粘度升高，燃料在低温下变为蜡状，也能够抑制燃料过滤器的堵塞或流量不足。孔口限制通过燃料过滤器的燃料的流量。因此，即使燃料过滤器位于供给泵的下游，也能够防止燃料过滤器的尺寸增大。

17. 发明授权

US06417083B1 Methods for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06417083B1
公开(公告)日：2002-07-09
申请号：US09438164
申请日：1999-11-11
申请人： Katsumi Mori
发明人： Katsumi Mori
IPC分类号： H01L213205
CPC分类号： H01L21/31138 , H01L21/28123 , H01L21/32136 , H01L21/32139
摘要： Certain embodiments provide a manufacturing method for a semiconductor device, in which an organic antireflection film can be etched while a resist layer maintains dimensions thereof. The method includes forming an oxide layer 24 on a p-type silicon substrate 10, and forming a polysilicon layer 26 on the oxide layer 24. An organic antireflection film 30 is formed on the polysilicon layer 26, and a resist layer R having a predetermined pattern is formed on a surface of the organic antireflection film 30. The method as includes etching the organic antireflection film 30 by using the resist layer R, in which an etching gas includes at least one of an oxygen-based gas and a chlorine-based gas, and forming a gate electrode by etching the polysilicon layer 26 with a predetermined pattern.
摘要翻译：某些实施例提供了半导体器件的制造方法，其中可以在抗蚀剂层保持其尺寸的同时蚀刻有机抗反射膜。该方法包括在p型硅衬底10上形成氧化物层24，并在氧化物层24上形成多晶硅层26.在多晶硅层26上形成有机抗反射膜30，并且具有预定的图案形成在有机抗反射膜30的表面上。包括通过使用抗蚀剂层R蚀刻有机抗反射膜30的方法，其中蚀刻气体包括氧基气体和氯系气体中的至少一种气体，并通过以预定图案蚀刻多晶硅层26形成栅电极。

18. 发明授权

US6083646A Non-aqueous electrolyte secondary battery and method for producing cathode material 失效
标题翻译：非水电解质二次电池及其制造方法
公开(公告)号：US6083646A
公开(公告)日：2000-07-04
申请号：US918068
申请日：1997-08-25
申请人： Naoyuki Sugeno , Katsumi Mori
发明人： Naoyuki Sugeno , Katsumi Mori
IPC分类号： C01G45/12 , H01M4/29 , H01M4/50 , H01M6/16
CPC分类号： H01M4/505 , C01G45/1221 , C01G45/1242 , C01G45/1257 , C01P2002/32 , C01P2002/72 , C01P2002/74 , C01P2002/77 , C01P2002/88 , C01P2006/40 , H01M10/0525 , H01M6/164
摘要： The object of the present invention is to provide a non-aqueous electrolyte secondary battery which uses a lithium-manganese oxide as an cathode material but, suppressing deterioration of an cathode material and a crystalline structure caused by charge/discharge cycles, exhibits an excellent discharge load property and an excellent cycle property. The present invention also provides a method for producing an cathode material which realizes the non-aqueous electrolyte secondary battery.
摘要翻译：本发明的目的是提供一种使用锂锰氧化物作为阴极材料但是抑制由充放电循环引起的阴极材料的劣化和晶体结构的非水电解质二次电池，显示出优异的放电负载性能和良好的循环性能。本发明还提供一种实现非水电解质二次电池的阴极材料的制造方法。

19. 发明授权

US5182757A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5182757A
公开(公告)日：1993-01-26
申请号：US756981
申请日：1991-09-09
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42
CPC分类号： H01S5/18338 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

20. 发明授权

US5181221A Surface emission type semiconductor laser 失效
公开(公告)号：US5181221A
公开(公告)日：1993-01-19
申请号：US756980
申请日：1991-09-09
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42
CPC分类号： H01S5/18338 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like semiconductor layer. The semiconductor laser also includes an exit-side electrode which is formed in contact with a contact layer of the column-like semiconductor layer which has an opening used to form an exit port. The opening is formed in the exit-side electrode at a position including the geometric center of the contact layer and ranging between 10% and 90% of the surface area of the contact layer.

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