专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4856013A Semiconductor laser having an active layer and cladding layer 失效
标题翻译：具有有源层和包层的半导体激光器
公开(公告)号：US4856013A
公开(公告)日：1989-08-08
申请号：US113788
申请日：1987-10-28
申请人： Hideaki Iwano , Yoshifumi Tsunekawa
发明人： Hideaki Iwano , Yoshifumi Tsunekawa
IPC分类号： H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/2231 , H01S5/2211 , H01S5/32308
摘要： A laser has an active layer formed on a prepared substrate, a cladding layer on the active layer and a contact layer on the cladding layer. The active layer and contact layer are formed of a semiconductor material of elements from Groups III-V. The contact layer and cladding layer are formed into an elongated projecting rib wherein the cladding layer has a remaining planar portion disposed across the active layer. An insulating layer of semiconductor of elements from Group II-VI is formed on each side of the rib supported on the remaining cladding layer.
摘要翻译：激光器具有形成在准备好的基板上的有源层，有源层上的包覆层和包覆层上的接触层。有源层和接触层由来自III-V族的元素的半导体材料形成。接触层和包层形成为细长的突出肋，其中包覆层具有跨过活性层设置的剩余平面部分。在支撑在剩余包层上的肋的每一侧上形成有II-VI族元素半导体绝缘层。

2. 发明授权

US5194119A Method of anisotropic dry etching of thin film semiconductors 失效
标题翻译：薄膜半导体的各向异性干蚀刻方法
公开(公告)号：US5194119A
公开(公告)日：1993-03-16
申请号：US485058
申请日：1990-02-22
申请人： Hideaki Iwano , Tetsuya Seki
发明人： Hideaki Iwano , Tetsuya Seki
IPC分类号： H01L21/465 , H01L21/467
CPC分类号： H01L21/465 , H01L21/467
摘要： A microwave ECR plasma etching method and apparatus employs a combination reactive gas medium supplied to a microwave excitation ECR plasma chamber coupled to a treatment chamber containing a Group II-VI sample to be etched. A reactive gas plasma is formed containing reactive species in the plasma chamber and the Group II-VI sample is irradiated with a beam of reactive species formed from the reactive gas plasma. The reactive gas medium is selected from the group consisting of a hydrogen halogenate, a mixture of a halogen gas and an inert gas, a mixture of a halogen gas and hydrogen gas, a mixture of a halogen gas, an inert gas and hydrogen gas, and a mixture of a halogen gas and nitrogen gas.
摘要翻译：微波ECR等离子体蚀刻方法和装置采用提供给微波激发ECR等离子体室的组合反应气体介质，该等离子体室与含有要蚀刻的II-VI族样品的处理室相连。在等离子体室中形成含有反应性物质的反应气体等离子体，并且使用由反应性气体等离子体形成的反应物质束照射II-VI族样品。反应性气体介质选自卤化氢，卤素气体和惰性气体的混合物，卤素气体和氢气的混合物，卤素气体，惰性气体和氢气的混合物，以及卤素气体和氮气的混合物。

3. 发明授权

US5182757A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5182757A
公开(公告)日：1993-01-26
申请号：US756981
申请日：1991-09-09
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42
CPC分类号： H01S5/18338 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the at least one column-like semiconductor layer. If a plurality of column-like semiconductor layers are to be formed by a separation groove, these column-like semiconductor layers are separated from one another, the II-VI group compound semiconductor epitaxial layer being buried in the separation groove.

4. 发明授权

US5181221A Surface emission type semiconductor laser 失效
公开(公告)号：US5181221A
公开(公告)日：1993-01-19
申请号：US756980
申请日：1991-09-09
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42
CPC分类号： H01S5/18338 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S5/18308 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, at least a cladding layer in the semiconductor layers being formed into at least one column-like semiconductor layer extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like semiconductor layer. The semiconductor laser also includes an exit-side electrode which is formed in contact with a contact layer of the column-like semiconductor layer which has an opening used to form an exit port. The opening is formed in the exit-side electrode at a position including the geometric center of the contact layer and ranging between 10% and 90% of the surface area of the contact layer.

5. 发明授权

US4675264A Electrophotographic sensitive member with amorphous Si barrier layer 失效
标题翻译：具有非晶Si阻挡层的电子照相敏感元件
公开(公告)号：US4675264A
公开(公告)日：1987-06-23
申请号：US885923
申请日：1986-07-15
申请人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
发明人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08242
摘要： The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
摘要翻译：本发明涉及具有由辉光放电分解或溅射产生的非晶硅形成的光电导层的电子照相敏感元件的改进。通过在导电性基板上依次层叠非晶硅阻隔层和非晶质光电导层而形成电子照相感光体，所述第一层含有元素周期表IIIa族的杂质，或含有相同的IIIa族的氮和杂质表中，并且在该层的点处还含有0.1至20.0原子％范围内的氧，并且在其余部分中以逐渐递减的图案含有氧。因此，感光构件对近红外光束具有增加的光敏性，大的电荷保持能力和低速率暗衰减特性。此外，制造成本较低。

6. 发明授权

US4666808A Amorphous silicon electrophotographic sensitive member 失效
标题翻译：非晶硅电子照相敏感元件
公开(公告)号：US4666808A
公开(公告)日：1987-05-19
申请号：US594201
申请日：1984-03-28
申请人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
发明人： Takao Kawamura , Hideaki Iwano , Naooki Miyamoto , Yasuo Nishiguchi
IPC分类号： G03G5/082 , G03G5/14
CPC分类号： G03G5/08242
摘要： The invention relates to improvements in an electrophotographic sensitive member having a photoconductive layer formed with amorphous silicon produced by glow discharge decomposition or sputtering. An electrophotographic sensitive member is formed by laminating an amorphous silicon barrier layer and an amorphous photoconductive layer successively on an electrically conductive substrate, the first mentioned layer containing an impurity of Group IIIa of Periodic Table of Elements, or nitrogen and impurity of Group IIIa of same Table, and also containing oxygen within a range of 0.1 to 20.0 atomic % at the point of the layer and in a progressively decreasing pattern throughout the rest thereof. Constructed as such, the photosensitive member has an increased photosensitivity to near-infrared beams, a large charge-holding capability, and low-rate dark attenuation characteristics. In addition, it is less expensive to manufacture.
摘要翻译：本发明涉及具有由辉光放电分解或溅射产生的非晶硅形成的光电导层的电子照相敏感元件的改进。通过在导电性基板上依次层叠非晶硅阻隔层和非晶质光电导层而形成电子照相感光体，所述第一层含有元素周期表IIIa族的杂质，或含有相同的IIIa族的氮和杂质表中，并且在该层的点处还含有0.1至20.0原子％范围内的氧，并且在其余部分中以逐渐递减的图案含有氧。因此，感光构件对近红外光束具有增加的光敏性，大的电荷保持能力和低速率暗衰减特性。此外，制造成本较低。

7. 发明授权

US5625637A Surface emitting semiconductor laser and its manufacturing process 失效
标题翻译：表面发射半导体激光器及其制造工艺
公开(公告)号：US5625637A
公开(公告)日：1997-04-29
申请号：US359964
申请日：1994-12-19
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
IPC分类号： H01S5/028 , H01S5/183 , H01S5/22 , H01S3/19
CPC分类号： H01S5/18369 , H01S2304/04 , H01S5/18308 , H01S5/18341 , H01S5/2211 , H01S5/2224
摘要： A surface emitting semiconductor laser, with a resonator cavity transverse to the planar extent of the deposited layers, is provided with a first reflection mirror on the substrate side composed of alternating layers comprising a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. A second reflection mirror is provided at the opposite end of the cavity adjacent to a column like resonator portion. At least the first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. The column like resonator portion is surrounded by a buried layer which may consist of two layers, the first layer functioning as barrier layer and the second layer functioning as a flattening layer. The first layer may be comprised of a silicon compound and the second layer may be comprised of SOG or a resin compound. The multiple layer band structure of the DBR mirror is improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the DBR mirror and the dual buried layer, respectively, because the doping concentration is controlled through dopant gas flow control or is controlled through light and can be easily accomplished without using comparatively high temperature processing.
摘要翻译：具有横向于沉积层的平面范围的谐振腔的表面发射半导体激光器在基板侧上设置有由交替层组成的第一反射镜，该交替层包括由III-V族化合物半导体以及由具有比第一层的能带隙大的能带隙的III-V族化合物半导体制成的第二层。第二反射镜设置在与柱状谐振器部分相邻的腔的相对端。至少第一反射镜包括分布布拉格反射（DBR）多层反射镜，其在第一和第二层之间具有高于其它区域的载流子浓度的界面区域。柱状谐振器部分被埋入层包围，该掩埋层可以由两层组成，第一层用作阻挡层，第二层用作平坦化层。第一层可以由硅化合物组成，第二层可以由SOG或树脂化合物构成。 DBR镜的多层带结构得到改善，电流容易垂直流过多层，元件电阻较低。另外，采用简单可靠的方法来制造DBR镜和双埋层，因为掺杂浓度通过掺杂剂气体流量控制来控制或通过光控制并且可以容易地实现而不使用比较高的温度处理。

8. 发明授权

US5623509A Semiconductor laser and light-sensing device using the same 失效
标题翻译：半导体激光器和光传感器件使用相同
公开(公告)号：US5623509A
公开(公告)日：1997-04-22
申请号：US395886
申请日：1995-02-28
申请人： Hideaki Iwano , Osamu Yokoyama , Hiroaki Nomura
发明人： Hideaki Iwano , Osamu Yokoyama , Hiroaki Nomura
IPC分类号： H01S3/00 , H01S5/00 , H01S5/028 , H01S5/20 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S3/005 , H01S5/20 , H01S5/34313 , H01S2301/18 , H01S5/005 , H01S5/02 , H01S5/028 , H01S5/2004 , H01S5/3432
摘要： A semiconductor laser comprises AlGaAs-type semiconductor layers deposited on a substrate and a current constriction layer having at least one stripe-shaped current injection region. This semiconductor layers comprise: a first cladding layer of the first conductivity type, a first optical waveguide layer of the first conductivity type formed on the first cladding layer, an active layer formed on the first optical waveguide layer and having a quantum-well structure, a second optical waveguide layer of a second conductivity type formed on the active layer, a second cladding layer of the second conductivity type formed on the second optical waveguide layer, and a contact layer formed on the second cladding layer. The active layer has flatness of such a degree that roughness with respect to a reference surface within a unit area of 1 mm.times.1 mm is no more than .+-.0.1 .mu.m, the width of the current injection region of the current constriction layer is between 100 .mu.m to 250 .mu.m, and the resonator length is between 500 .mu.m to 1,000 .mu.m.
摘要翻译：半导体激光器包括沉积在基板上的AlGaAs型半导体层和具有至少一个条形电流注入区域的电流收缩层。该半导体层包括：第一导电类型的第一包层，形成在第一包层上的第一导电类型的第一光波导层，形成在第一光波导层上并具有量子阱结构的有源层，形成在有源层上的第二导电类型的第二光波导层，形成在第二光波导层上的第二导电类型的第二覆层，以及形成在第二覆层上的接触层。有源层具有平坦度，使得在1mm×1mm的单位面积内相对于基准面的粗糙度不大于+/-0.1μm，电流收缩层的电流注入区域的宽度在 100〜250μm，谐振器长度在500〜1000μm之间。

9. 发明授权

US5537666A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5537666A
公开(公告)日：1996-07-16
申请号：US319650
申请日：1994-10-07
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18369 , H01L33/0062 , H01S5/423 , H01S2301/166 , H01S2301/18 , H01S5/18308 , H01S5/18338 , H01S5/18341 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the organic metal vapor growth method. A photoresist mask is then formed on the semiconductor layers. At least the cladding layer in the semiconductor layers is anisotropically etched by the use of the photoresist mask. At least one column-like portion is thus formed to have sidewalls extending perpendicular to the substrate and to guide the light in a direction perpendicular to the substrate. Thereafter, a buried layer including a single layer formed therein at an area covering at least the sidewalls of the column-like portion is formed around the column-like portion. A multilayered dielectric mirror is deposited in the column-like portion on the light exit end thereof. The multilayered dielectric mirror is disposed at the light exit port of a light exit side electrode. To increase the reflectivity below the light exit side electrode, a multilayered semiconductor mirror may be formed in the column-like portion at a position nearer the light exit side than the cladding layer.
摘要翻译：为了制造表面发射型半导体激光器，通过有机金属蒸气生长法在衬底上依次形成包括多层半导体镜，包层，有源层等的多个半导体层。然后在半导体层上形成光致抗蚀剂掩模。至少通过使用光致抗蚀剂掩模对半导体层中的包覆层进行各向异性蚀刻。因此，至少一个柱状部分形成为具有垂直于衬底延伸的侧壁并且在垂直于衬底的方向上引导光。此后，在柱状部分周围形成包括在至少覆盖柱状部分的侧壁的区域上形成的单层的埋层。在其出射端的柱状部分中沉积多层电介质镜。多层电介质反射镜设置在光出射侧电极的光出射口。为了增加光出射侧电极之下的反射率，可以在比包层更靠近光出射侧的位置的柱状部分中形成多层半导体镜。

10. 发明授权

US5436922A Surface emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US5436922A
公开(公告)日：1995-07-25
申请号：US205363
申请日：1994-03-03
申请人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
发明人： Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
IPC分类号： H01L33/00 , H01S5/183 , H01S5/42 , H01S3/19
CPC分类号： H01S5/18308 , H01L33/0062 , H01S5/423 , H01S2304/04 , H01S5/18344 , H01S5/18355 , H01S5/18369 , H01S5/18394 , H01S5/2211 , H01S5/2224 , H01S5/4068
摘要： A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a buried layer surrounding the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said omitted laser beam is parallel to the direction of said shorter sides.
摘要翻译：表面发射型半导体激光器包括在与激光器的半导体衬底垂直的方向上限定至少一个谐振器的多个半导体层，所述至少一层半导体层中的包层被形成为至少一个柱状在垂直于半导体衬底的方向上延伸的部分以及围绕柱状部分的掩埋层。柱状部分在与半导体衬底平行的平面中具有矩形横截面并具有较长和较短的侧面，由此所述省略的激光束的偏振面平行于所述短边的方向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式