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11. 发明授权

US5555112A Liquid crystal display device having multilayer gate busline composed of metal oxide and semiconductor 失效
标题翻译：具有由金属氧化物和半导体构成的多层栅极总线的液晶显示装置
公开(公告)号：US5555112A
公开(公告)日：1996-09-10
申请号：US193868
申请日：1994-02-09
申请人： Ryoji Oritsuki , Minoru Hiroshima , Masahiro Yanai , Masaaki Matsuda , Toshikazu Horii , Yuichi Hashimoto , Hayao Kozai , Kenkichi Suzuki , Masaru Takabatake , Takashi Isoda
发明人： Ryoji Oritsuki , Minoru Hiroshima , Masahiro Yanai , Masaaki Matsuda , Toshikazu Horii , Yuichi Hashimoto , Hayao Kozai , Kenkichi Suzuki , Masaru Takabatake , Takashi Isoda
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1368 , H01L29/78 , H01L29/786 , G02F1/1343 , H01L29/04
CPC分类号： G02F1/136286 , G02F2001/13629
摘要： In a liquid crystal display substrate in which the pixel electrode is applied with a voltage through the drain and source of a thin-film transistor (TFT) that conducts by a voltage applied to the TFT gate electrode, this gate electrode and a busline connected to the gate electrode are formed as a multi-layered structure consisting of a gate layer and at least two layers of a gate insulation film and an amorphous silicon film. The multi-layered structure is formed by etching through a single mask.
摘要翻译：在液晶显示基板中，通过施加于TFT栅电极的电压导通的薄膜晶体管（TFT）的漏极和源极对像素电极施加电压，该栅极电极和连接到栅电极形成为由栅极层和至少两层栅极绝缘膜和非晶硅膜构成的多层结构。多层结构通过单一掩模的蚀刻形成。

12. 发明授权

US07129999B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07129999B2
公开(公告)日：2006-10-31
申请号：US11111872
申请日：2005-04-22
申请人： Nobuyuki Suzuki , Ryoji Oritsuki , Yasushi Nakano
发明人： Nobuyuki Suzuki , Ryoji Oritsuki , Yasushi Nakano
IPC分类号： G02F1/1333
CPC分类号： G02F1/136204 , G02F1/1345
摘要： A liquid crystal display device includes first and second substrates, a liquid crystal layer, a plurality of video signal lines and scanning signal lines formed on the first delimiting pixel regions, a plurality of video signal line driving circuits, and a thin film transistor formed in the pixel regions, and driven by a scanning signal from a scanning signal line. A display area contains a plurality of the pixel regions and a first and second protection element lines are formed at a peripheral portion of the display area and connected to the video signal lines by first and second high-resistance elements. A first circuit board is electrically connected with a portion of the video signal line driving circuits and a second circuit board is electrically connected with another portion of the video signal line driving circuits.
摘要翻译：液晶显示装置包括第一和第二基板，液晶层，多个视频信号线和形成在第一限定像素区域上的扫描信号线，多个视频信号线驱动电路和形成在像素区域，并由来自扫描信号线的扫描信号驱动。显示区域包含多个像素区域，并且第一和第二保护元件线形成在显示区域的周边部分并且通过第一和第二高电阻元件连接到视频信号线。第一电路板与视频信号线驱动电路的一部分电连接，第二电路板与视频信号线驱动电路的另一部分电连接。

13. 发明授权

US06861299B2 Process for manufacturing thin film transistor on unannealed glass substrate 有权
标题翻译：在非退火玻璃基板上制造薄膜晶体管的工艺
公开(公告)号：US06861299B2
公开(公告)日：2005-03-01
申请号：US10404060
申请日：2003-04-02
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

14. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

15. 发明授权

US06333769B1 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US06333769B1
公开(公告)日：2001-12-25
申请号：US09342131
申请日：1999-06-29
申请人： Nobuyuki Suzuki , Ryoji Oritsuki , Yasushi Nakano
发明人： Nobuyuki Suzuki , Ryoji Oritsuki , Yasushi Nakano
IPC分类号： G02F11333
CPC分类号： G02F1/136204 , G02F1/1345
摘要： Pixel areas surrounded by scanning signal lines, video signal lines, and counter signal lines are formed on a liquid-crystal-side surface of a transparent substrate, and include thin-film transistors driven by scanning signals from the scanning signal lines, pixel electrodes to which video signals from the video signal lines are supplied via the thin-film transistors, and counter electrodes spaced apart from the pixel electrodes and connected to the counter signal lines. To prevent leakage current from flowing from the scanning signal lines or the video signal lines to the counter signal lines, a common line is formed around a display area constituted by the pixel areas, the video signal lines and the scanning signal lines are connected to the common line by non-linear elements, and the counter signal lines are connected to the common line by high-resistance elements.
摘要翻译：由扫描信号线，视频信号线和反相信号线包围的像素区域形成在透明基板的液晶侧表面上，并且包括由扫描信号线，像素电极的扫描信号驱动的薄膜晶体管来自视频信号线的视频信号经由薄膜晶体管提供，以及与像素电极间隔开并连接到计数器信号线的对置电极。为了防止漏电流从扫描信号线或视频信号线流向计数信号线，在由像素区域构成的显示区域周围形成共同的线，视频信号线和扫描信号线连接到公共线由非线性元件，并且计数器信号线通过高电阻元件连接到公共线。

16. 发明授权

US06226059B1 Active matrix display device using aluminum alloy in scanning signal line or video signal line 失效
标题翻译：主动矩阵显示装置采用铝合金扫描信号线或视频信号线
公开(公告)号：US06226059B1
公开(公告)日：2001-05-01
申请号：US09098541
申请日：1998-06-17
申请人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
发明人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
IPC分类号： G02F1136
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136295
摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. Al—Ta is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to at least 1,000 angstroms. The fabrication yield and reliability can be improved.
摘要翻译：在扫描信号线和栅电极上形成有阳极氧化膜Al。 Al-Ta用作扫描信号线和栅电极的材料。阳极化氧化膜的厚度设定为至少1000埃。可以提高制造产量和可靠性。

17. 发明授权

US5589962A Active matrix display device using aluminum alloy in scanning signal line or video signal line 失效
标题翻译：主动矩阵显示装置采用铝合金扫描信号线或视频信号线
公开(公告)号：US5589962A
公开(公告)日：1996-12-31
申请号：US467967
申请日：1995-06-06
申请人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
发明人： Hideaki Yamamoto , Haruo Matsumaru , Tetsuaki Suzuki , Mitsuo Nakatani , Michio Tsukii , Akira Sasano , Saburo Oikawa , Ryoji Oritsuki
IPC分类号： G02F1/133 , G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/136286 , G02F2001/136295
摘要： An anodized oxide film of Al is formed on a scanning signal line and a gate electrode. An alloy of Al containing Ta and Ti is used as material of each of the scanning signal line and gate electrode. The thickness of the anodized oxide film is set to 1,000 angstroms or more. The fabrication yield and reliability can be improved.
摘要翻译：在扫描信号线和栅电极上形成有阳极氧化膜Al。使用含有Ta和Ti的Al的合金作为扫描信号线和栅电极的材料。阳极化氧化膜的厚度设定为1000埃以上。可以提高制造产量和可靠性。

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