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11. 发明授权

US08795502B2 Electrodeposition under illumination without electrical contacts 有权
标题翻译：在没有电气接触的照明下电沉积
公开(公告)号：US08795502B2
公开(公告)日：2014-08-05
申请号：US12778689
申请日：2010-05-12
申请人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven Erik Steen
发明人： John M. Cotte , Harold J. Hovel , Devendra K. Sadana , Xiaoyan Shao , Steven Erik Steen
IPC分类号： C25D5/00 , C25D5/02 , C25D7/12 , C25D17/00
CPC分类号： H01L31/022425 , C23C18/06 , C23C18/08 , C23C18/14 , C25D5/024 , C25D5/028 , C25D7/123 , C25D7/126 , H01L21/2885 , H01L21/76879 , H01L23/485 , Y02E10/50
摘要： A method of forming patterned metallization by electrodeposition under illumination without external voltage supply on a photovoltaic structure or on n-type region of a transistor/junction.
摘要翻译：通过在照明下电沉积形成图案化金属化的方法，在光电结构或晶体管/结的n型区域上没有外部电压供应。

12. 发明申请

US20110272009A1 METHOD AND STRUCTURE OF PHOTOVOLTAIC GRID STACKS BY SOLUTION BASED PROCESSES 有权
标题翻译：基于解决方案的光伏堆栈的方法和结构
公开(公告)号：US20110272009A1
公开(公告)日：2011-11-10
申请号：US12775939
申请日：2010-05-07
申请人： Cyril Cabral, JR. , Harold J. Hovel , Xiaoyan Shao
发明人： Cyril Cabral, JR. , Harold J. Hovel , Xiaoyan Shao
IPC分类号： H01L31/0288 , H01L31/0236 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , Y02E10/50
摘要： A grid stack structure of a solar cell, which includes a silicon substrate, wherein a front side of the silicon is doped with phosphorus to form a n-emitter and a back side of the silicon is screen printed with aluminum (Al) metallization; a dielectric layer, which acts as an antireflection coating (ARC), applied on the silicon; a mask layer applied on the front side to define a grid opening of the dielectric layer, wherein an etching method is applied to open an unmasked grid area; a light-induced plated nickel or cobalt layer applied to the front side with electrical contact to the back side Al metallization; a silicide layer formed by rapid thermal annealing of the plated nickel (Ni) or cobalt (Co); an optional barrier layer electrodeposited on the silicide; a copper (Cu) layer electrodeposited on the silicide/barrier film layer; and a thin protective layer is chemically applied or electrodeposited on top of the Cu layer.
摘要翻译：包括硅衬底的太阳能电池的栅格堆叠结构，其中硅的正面被磷掺杂以形成n发射极，硅的背面用铝（Al）金属化丝网印刷; 作为抗反射涂层（ARC）的介电层，施加在硅上; 施加在前侧的掩模层以限定电介质层的栅格开口，其中施加蚀刻方法以打开未屏蔽的栅格区域; 施加到前侧的光诱导的镀镍或钴层与后侧Al金属化电接触; 通过镀镍（Ni）或钴（Co）的快速热退火形成的硅化物层; 电沉积在硅化物上的可选阻挡层; 电沉积在硅化物/阻挡膜层上的铜（Cu）层; 并且将薄的保护层化学施加或电沉积在Cu层的顶部上。

13. 发明授权

US08665575B2 Solar module with overheat protection 有权
标题翻译：太阳能组件具有过热保护功能
公开(公告)号：US08665575B2
公开(公告)日：2014-03-04
申请号：US13166842
申请日：2011-06-23
申请人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Krause , Zhengwen Li , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Krause , Zhengwen Li , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Carl J. Radens , Brian C. Sapp
IPC分类号： H02H5/04
CPC分类号： H02H7/20 , H01L31/02021 , H02H5/047 , Y02E10/50
摘要： A photovoltaic module (10) with a plurality of solar cells (20) interconnected in serial and/or parallel arrangement within the module (10) is equipped with an overheat protection system (30) for suppressing damages of the photovoltaic module (10) due to defects of the solar cells (20). The overheat protection system (30) comprises a heat sensor (32) which is thermally coupled to a solar cell (20). The heat sensor (32) is physically integrated into an electrical switch (34, 36, 38) which is electrically connected to said solar cell (20).
摘要翻译：具有在模块（10）内以串联和/或并联布置互连的多个太阳能电池（20）的光伏模块（10）装备有过热保护系统（30），用于抑制光伏模块（10）的损坏涉及太阳能电池的缺陷（20）。过热保护系统（30）包括热耦合到太阳能电池（20）的热传感器（32）。热传感器（32）物理地集成在电连接到所述太阳能电池（20）的电开关（34,36,38）中。

14. 发明授权

US08653360B2 Compositionally-graded band gap heterojunction solar cell 有权
标题翻译：组分梯度带隙异质结太阳能电池
公开(公告)号：US08653360B2
公开(公告)日：2014-02-18
申请号：US12849966
申请日：2010-08-04
申请人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
发明人： Stephen W. Bedell , Harold J. Hovel , Daniel A. Inns , Jee H. Kim , Alexander Reznicek , Devendra K. Sadana
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/065 , H01L31/03765 , H01L31/075 , H01L31/18 , Y02E10/548
摘要： A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.
摘要翻译：光伏器件包括组成调制的半导体结构，其包括p掺杂的第一半导体材料层，第一本征成分梯度半导体材料层，本征半导体材料层，第二本征组分梯度半导体层和n掺杂的第一半导体层半导体材料层。第一和第二本征成分梯度半导体材料层包括具有较大带隙宽度的第一半导体材料和具有较小带隙的第二半导体材料的合金，并且第二半导体材料的浓度朝向本征半导体第一和第二组成梯度半导体材料层中的材料层。光电器件提供与第一半导体材料相当的开路电压，以及与第二半导体材料相当的短路电流，从而提高光伏器件的效率。

15. 发明授权

US08569803B2 BEOL compatible FET structrure 有权
标题翻译： BEOL兼容FET结构
公开(公告)号：US08569803B2
公开(公告)日：2013-10-29
申请号：US13572742
申请日：2012-08-13
申请人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
发明人： Christy S. Tyberg , Katherine L. Saenger , Jack O. Chu , Harold J. Hovel , Robert L. Wisnieff , Kerry Bernstein , Stephen W. Bedell
IPC分类号： H01L29/76
CPC分类号： H01L23/5226 , H01L23/53271 , H01L27/124 , H01L27/1248 , H01L2924/0002 , H01L2924/00
摘要： This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration.
摘要翻译：本发明提供了用于在线路后端（BEOL）互连结构中并入薄膜晶体管的结构和制造工艺。所描述的结构和制造工艺与BEOL互连结构的处理要求相兼容。结构和制造工艺利用已经并入到互连布线层中的现有处理步骤和材料，以便降低与在这些层级中引入薄膜晶体管相关联的附加成本。与现有技术的3D集成方法相比，该结构能够实现多层次的垂直（3D）集成，具有改进的可制造性和可靠性。

16. 发明申请

US20110212622A1 SURFACE TEXTURING USING A LOW QUALITY DIELECTRIC LAYER 审中-公开
标题翻译：表面纹理使用低品质电介质层
公开(公告)号：US20110212622A1
公开(公告)日：2011-09-01
申请号：US12714426
申请日：2010-02-26
申请人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
发明人： Joel P. Desouza , Harold J. Hovel , Daniel Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger
IPC分类号： H01L21/311
CPC分类号： H01L31/02363 , Y02E10/50
摘要： A low cost method is described for forming a textured Si surface such as for a solar cell which includes forming a dielectric layer containing pinholes, anisotropically etching through the pinholes to form inverted pyramids in the Si surface and removing the dielectric layer thereby producing a high light trapping efficiency for incident radiation.
摘要翻译：描述了一种用于形成纹理Si表面的低成本方法，例如用于太阳能电池，其包括形成包含针孔的电介质层，通过针孔各向异性蚀刻以在Si表面中形成倒置的金字塔并除去电介质层，从而产生高光捕获效率的入射辐射。

17. 发明授权

US07923628B2 Method of controlling the composition of a photovoltaic thin film 有权
标题翻译：控制光伏薄膜组成的方法
公开(公告)号：US07923628B2
公开(公告)日：2011-04-12
申请号：US12556335
申请日：2009-09-09
申请人： Hariklia Deligianni , Harold J. Hovel , Raman Vaidyanathan
发明人： Hariklia Deligianni , Harold J. Hovel , Raman Vaidyanathan
IPC分类号： H01L31/0216 , H01L31/18 , H01L21/3205 , H01L21/31
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer.
摘要翻译：一种在退火工艺中减少光伏薄膜结构元件损耗的方法，包括在衬底上沉积薄膜，其中薄膜包括单一化学元素或化合物，用保护层涂覆薄膜以形成涂覆的薄膜结构，其中所述保护层防止在退火过程期间所述单一化学元素或所述化学化合物的一部分的部分逸出，并且使所述涂覆的薄膜结构退火以形成涂覆的光伏薄膜结构，其中涂覆的光伏薄膜保留在保护层退火期间防止单一化学元素或化学化合物部分逸出的部分。

18. 发明申请

US20100221867A1 LOW COST SOI SUBSTRATES FOR MONOLITHIC SOLAR CELLS 审中-公开
标题翻译：用于单晶太阳能电池的低成本SOI衬底
公开(公告)号：US20100221867A1
公开(公告)日：2010-09-02
申请号：US12436249
申请日：2009-05-06
申请人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
发明人： Stephen W. Bedell , Joel P. de Souza , Keith E. Fogel , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Devendra K. Sadana , Katherine L. Saenger , Ghavam G. Shahidi
IPC分类号： H01L31/0376 , H01L21/762
CPC分类号： H01L31/03921 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02667 , H01L21/7624 , H01L21/76245 , H01L21/76262 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/1872 , Y02E10/50 , Y02P70/521
摘要： A lost cost method for fabricating SOI substrates is provided. The method includes forming a stack of p-type doped amorphous Si-containing layers on a semiconductor region of a substrate by utilizing an evaporation deposition process. A solid phase recrystallization step is then performed to convert the amorphous Si-containing layers within the stack into a stack of p-type doped single crystalline Si-containing layers. After recrystallization, the single crystalline Si-containing layers are subjected to anodization and at least an oxidation step to form an SOI substrate. Solar cells and/or other semiconductor devices can be formed on the upper surface of the inventive SOI substrate.
摘要翻译：提供了一种用于制造SOI衬底的损耗成本方法。该方法包括通过利用蒸发沉积工艺在衬底的半导体区域上形成一层p型掺杂的非晶态含Si层。然后进行固相重结晶步骤，以将叠层内的非晶态含硅层转化为p型掺杂单晶含Si层的堆叠。重结晶后，对单晶含Si层进行阳极氧化和至少氧化步骤以形成SOI衬底。太阳能电池和/或其他半导体器件可以形成在本发明的SOI衬底的上表面上。

19. 发明授权

US06429145B1 Method of determining electrical properties of silicon-on-insulator wafers 失效
标题翻译：确定绝缘体上硅晶片的电性能的方法
公开(公告)号：US06429145B1
公开(公告)日：2002-08-06
申请号：US09770955
申请日：2001-01-26
申请人： Harold J. Hovel
发明人： Harold J. Hovel
IPC分类号： H01L21302
CPC分类号： H01L22/14
摘要： A method of determining electrical parameters of a silicon-on-insulator wafer. In this method a native oxide of a silicon layer on a silicon-on-insulator substrate is removed from a silicon mesa formed on the silicon layer. The mesa is contacted with two liquid metal electrodes. A voltage is applied to an electrode on the bottom of the silicon-on-insulator wafer. The current between the two liquid metal electrodes is measured for a combination of voltages between the liquid metal electrodes and the bottom voltage. The resulting current-voltage behavior is analyzed to obtain parameters of mobility, charge in the buried oxide of the silicon-on-insulator substrate, interface state charge, threshold voltages in the linear and saturated regions, doping density, transconductances and output conductances.
摘要翻译：确定绝缘体上硅晶片的电参数的方法。在该方法中，从形成在硅层上的硅台面去除绝缘体上硅衬底上的硅层的自然氧化物。台面与两个液态金属电极接触。将电压施加到绝缘体上硅晶片的底部的电极上。测量两个液体金属电极之间的电流，用于液态金属电极之间的电压和底部电压的组合。分析得到的电流 - 电压特性以获得迁移率参数，绝缘体上硅衬底的掩埋氧化物中的电荷，界面态电荷，线性和饱和区域中的阈值电压，掺杂密度，跨导和输出电导。

20. 发明授权

US4766093A Chemically formed self-aligned structure and wave guide 失效
标题翻译：化学形成自对准结构和波导
公开(公告)号：US4766093A
公开(公告)日：1988-08-23
申请号：US62332
申请日：1987-06-09
申请人： Harold J. Hovel , Thomas F. Kuech
发明人： Harold J. Hovel , Thomas F. Kuech
IPC分类号： G02B6/13 , H01L21/033 , H01L21/308 , H01L21/316 , H01S5/02 , H01L21/20
CPC分类号： H01L21/02236 , G02B6/13 , H01L21/02238 , H01L21/02244 , H01L21/0331 , H01L21/3081 , H01L21/3086 , H01L21/31658 , H01L21/31662 , H01L21/31683 , H01S5/0205
摘要： The formation of a self-aligned semiconductor structure in a semiconductor substrate is described by providing a first and a second layer or a wave guide of different chemical composition above said semiconductor substrate, said second layer providing a shape defining opening permitting chemical conversion of said first layer adjacent said substrate to a third chemical composition different from said first and second layers. The third chemical composition is removed with a reagent that reacts only with said third composition and not with said first and second layers for the manufacture of self-aligned semiconductor structures. The third chemical composition is retained in the formation of a wave guide and has an index of refraction different from the first layer.
摘要翻译：通过在所述半导体衬底上方提供不同化学成分的第一层和第二层或波导来描述在半导体衬底中形成自对准半导体结构，所述第二层提供允许化学转化所述第一层与所述第一和第二层不同的第三化学组成。第三化学成分用仅与所述第三组合物反应的试剂除去，而不与所述第一和第二层反应，用于制造自对准的半导体结构。第三种化学成分保留在波导的形成中，并且具有与第一层不同的折射率。

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