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11. 发明授权

US06064799A Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature 失效
标题翻译：用于在使晶片温度升高的同时控制晶片的径向温度梯度的方法和装置
公开(公告)号：US06064799A
公开(公告)日：2000-05-16
申请号：US71469
申请日：1998-04-30
申请人： Roger N. Anderson , David K. Carlson
发明人： Roger N. Anderson , David K. Carlson
IPC分类号： H01L21/205 , H01L21/00 , H01L21/26 , A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A method and apparatus for controlling the radial temperature gradients of a wafer and a susceptor while ramping the temperature of the wafer and susceptor using a first heat source that is primarily directed at a central portion of the wafer, a second heat source that is primarily directed at an outer portion of the wafer, a third heat source that is primarily directed at a central portion of the susceptor, and a fourth heat source that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.
摘要翻译：一种用于控制晶片和基座的径向温度梯度的方法和装置，同时使用主要针对晶片的中心部分的第一热源来升高晶片和基座的温度，主要定向的第二热源在晶片的外部，主要指向基座的中心部分的第三热源和主要指向基座的外部的第四热源。通过向第一，第二，第三和第四热源施加电力来实现晶片和基座温度的斜坡化。在斜坡期间，第一和第二热源功率的比率作为晶片温度的函数而变化，并且第三和第四热源功率的比值作为基座温度的函数而变化。

12. 发明授权

US5725673A Semiconductor wafer process chamber with susceptor back coating 失效
标题翻译：半导体晶圆处理室，带底座背面涂层
公开(公告)号：US5725673A
公开(公告)日：1998-03-10
申请号：US719580
申请日：1996-09-25
申请人： Roger N. Anderson , H. Peter W. Hey , Israel Beinglass , Mahalingam Venkatesan
发明人： Roger N. Anderson , H. Peter W. Hey , Israel Beinglass , Mahalingam Venkatesan
IPC分类号： C30B25/08 , C23C14/50 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/10 , C30B25/14 , H01L21/205 , H01L21/31 , C23C16/00
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45561 , C23C16/45563 , C23C16/4581 , C30B25/105 , C30B25/14
摘要： The present disclosure is directed to an apparatus for depositing a layer of a material on a wafer. The apparatus includes a deposition chamber having an upper dome, a lower dome and a side wall between the upper and lower domes. A susceptor plate is in and extends across the deposition chamber to divide the deposition chamber into an upper portion above the susceptor plate and a lower portion below the susceptor plate. An exhaust passage formed through the side wall and is coupled to an upper passage which extends to the upper portion of the deposition chamber and is coupled to a lower passage which extends to the lower portion of the deposition chamber.
摘要翻译：本公开涉及一种用于在晶片上沉积材料层的装置。该装置包括具有上圆顶，下圆顶和在上下圆顶之间的侧壁的沉积室。感受板在沉积室中并且延伸穿过沉积室，以将沉积室分成基座板上方的上部和基座板下方的下部。排气通道，其形成为穿过侧壁并且连接到上部通道，该上部通道延伸到沉积室的上部并且联接到延伸到沉积室的下部的下部通道。

13. 发明授权

US5108792A Double-dome reactor for semiconductor processing 失效
标题翻译：用于半导体加工的双重反应器
公开(公告)号：US5108792A
公开(公告)日：1992-04-28
申请号：US491416
申请日：1990-03-09
申请人： Roger N. Anderson , John G. Martin , Douglas Meyer , Daniel West , Russell Bowman , David V. Adams
发明人： Roger N. Anderson , John G. Martin , Douglas Meyer , Daniel West , Russell Bowman , David V. Adams
IPC分类号： H01L21/203 , C23C16/44 , C23C16/48 , C30B25/08 , C30B25/10 , C30B25/14 , H01L21/00 , H01L21/205 , H01L21/26 , H01L21/324
CPC分类号： H01L21/67115 , C23C16/44 , C23C16/481 , C30B25/08 , C30B25/10 , C30B25/14
摘要： A thermal reactor for epitaxial deposition on a wafer comprises a double-dome vessel and dual heat sources. Each heat source comprises inner and outer circular arrays of infrared lamps. Circumferential heating uniformity is assured by the cylindrical symmetry of the vessel and the heating sources. Radial heating uniformity is provided by independent control of inner and outer heating arrays for both the top and bottom heat sources. The relative temperatures of wafer and susceptor are controlled by adjusting relative energies provided by the upper and lower heat sources so that backside migration. Reduced pressure operation is provided for by the convex top and bottom domes. Due to the provided control over transmitted energy distribution, a susceptor can have low thermal mass so that elevated temperature can be achieved more quickly and cooling can be facilitated as well. This improves throughput and reduces manufacturing costs per wafer. Reagent gas introduction can be axial or radial as desired.

14. 发明授权

US11074522B2 Electric grid analytics learning machine 有权
公开(公告)号：US11074522B2
公开(公告)日：2021-07-27
申请号：US16916013
申请日：2020-06-29
申请人： Roger N. Anderson , Boyi Xie , Leon L. Wu , Arthur Kressner
发明人： Roger N. Anderson , Boyi Xie , Leon L. Wu , Arthur Kressner
IPC分类号： G06N20/00
摘要： Electric Grid Analytics Learning Machine, EGALM, is a machine learning based, “brutally empirical” analysis system for use in all energy operations. EGALM is applicable to all aspects of the electricity operations from power plants to homes and businesses. EGALM is a data-centric, computational learning and predictive analysis system that uses open source algorithms and unique techniques applicable to all electricity operations in the United States and other foreign countries.

15. 发明申请

US20120072039A1 Dynamic Contingency Avoidance and Mitigation System 有权
标题翻译：动态应急避免和减轻系统
公开(公告)号：US20120072039A1
公开(公告)日：2012-03-22
申请号：US13214057
申请日：2011-08-19
申请人： Roger N. Anderson , Albert Boulanger , John A. Johnson
发明人： Roger N. Anderson , Albert Boulanger , John A. Johnson
IPC分类号： G06F1/28 , G06F17/00
CPC分类号： G06Q10/06315 , G05B13/0265 , G05B15/02 , G05B23/0283 , G06F17/5009 , G06Q10/04 , G06Q10/06375 , G06Q50/06 , H02J2003/007 , Y04S10/54
摘要： The disclosed subject matter provides systems and methods for allocating resources within an infrastructure, such as an electrical grid, in response to changes to inputs and output demands on the infrastructure, such as energy sources and sinks. A disclosed system includes one or more processors, each having respective communication interfaces to receive data from the infrastructure, the data comprising infrastructure network data, one or more software applications, operatively coupled to and at least partially controlling the one or more processors, to process and characterize the infrastructure network data; and a display, coupled to said one or more processors, for visually presenting a depiction of at least a portion of the infrastructure including any changes in condition thereof, and one or more controllers in communication with the one or more processors, to manage processing of the resource, wherein the resource is obtained and/or distributed based on the characterization of said real time infrastructure data.
摘要翻译：所公开的主题提供了用于在诸如电网之类的基础设施（例如电网）内分配资源的系统和方法，以响应对基础设施（例如能量源和汇）的输入和输出需求的改变。所公开的系统包括一个或多个处理器，每个处理器具有各自的通信接口以从基础设施接收数据，该数据包括基础设施网络数据，一个或多个软件应用，可操作地耦合到且至少部分地控制一个或多个处理器，以处理并表征基础设施网络数据; 以及耦合到所述一个或多个处理器的显示器，用于可视地呈现基础设施的至少一部分的描绘，包括其条件的任何改变，以及与所述一个或多个处理器通信的一个或多个控制器，以管理所述资源，其中基于所述实时基础设施数据的表征来获得和/或分发所述资源。

16. 发明授权

US6108491A Dual surface reflector 有权
标题翻译：双面反射镜
公开(公告)号：US6108491A
公开(公告)日：2000-08-22
申请号：US183796
申请日：1998-10-30
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： H01L21/205 , H01L21/00 , H01L21/26
CPC分类号： H01L21/67115
摘要： A dual surfaced mid-reflector employs two independently shaped faceted faces to direct radiant energy from separate heater lamp arrays to a substrate or substrate support to be heated. A dual surfaced mid-reflector can also be employed in conjunction with a peripheral cylindical reflect or and a central cylindrical reflector to further direct radiation to specific regions on a substrate or substrate support. In addition, a dual surfaced mid-reflector can also be employed in conjunction with heater lamps where the radiation of individual lamps is further directed by focusing reflectors or dispersive reflectors.
摘要翻译：双表面中间反射器采用两个独立成形的刻面，将辐射能从单独的加热灯阵列引导到要加热的基板或基板支撑。双表面中间反射器也可以与外围圆柱形反射体或中心圆柱形反射器结合使用，以进一步将辐射引导到基底或基底支撑体上的特定区域。此外，还可以与加热灯结合使用双表面中间反射器，其中通过聚焦反射器或分散反射器进一步引导各个灯的辐射。

17. 发明授权

US06099648A Domed wafer reactor vessel window with reduced stress at atmospheric and above atmospheric pressures 失效
公开(公告)号：US06099648A
公开(公告)日：2000-08-08
申请号：US907171
申请日：1997-08-06
申请人： Roger N. Anderson
发明人： Roger N. Anderson
IPC分类号： C23C16/48 , C30B25/08 , H01L21/205 , C23C16/00
CPC分类号： C30B25/08 , C23C16/481
摘要： A thermal reactor having a wafer chamber for containing at least one semiconductor wafer during processing. The thermal reactor contains a quartz window having an inward bow defining a concave outside surface.

18. 发明授权

US6083323A Method for controlling the temperature of the walls of a reaction chamber during processing 失效
标题翻译：在处理过程中控制反应室壁温度的方法
公开(公告)号：US6083323A
公开(公告)日：2000-07-04
申请号：US5311
申请日：1998-01-09
申请人： David K. Carlson , Norma Riley , Roger N. Anderson
发明人： David K. Carlson , Norma Riley , Roger N. Anderson
IPC分类号： C23C16/44 , C23C16/48 , C23C16/52 , H01L21/00 , B08B5/00 , B08B9/00
CPC分类号： C23C16/4405 , C23C16/481 , C23C16/52 , H01L21/67248 , Y10S438/905
摘要： An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber. The shroud forms a portion of a housing which supports and encloses the reaction chamber.
摘要翻译：一种用于控制工件处理系统内的反应室附近的冷却剂（空气）流的装置和并发方法，使得反应室的壁的温度保持在预定的目标温度。目标温度通常是优化室内同时进行的过程的温度，例如在沉积过程期间利用一个温度和在清洁过程期间不同的温度。该装置包含用于测量室壁温度的温度测量装置。将测量的温度与预定的目标温度进行比较。闭环系统控制靠近室壁的空气流，使得测量的温度基本上等于目标温度。空气流量控制由位于入口管道内的空气流量控制装置提供，该进气管道将空气供给到护罩，以将空气引导通过反应室。护罩形成支撑并包围反应室的壳体的一部分。

19. 发明授权

US5809211A Ramping susceptor-wafer temperature using a single temperature input 失效
标题翻译：使用单个温度输入来加速基座晶圆温度
公开(公告)号：US5809211A
公开(公告)日：1998-09-15
申请号：US570395
申请日：1995-12-11
申请人： Roger N. Anderson , Harold J. Mellen, III
发明人： Roger N. Anderson , Harold J. Mellen, III
IPC分类号： C30B25/10 , C30B25/16 , G01J5/00 , G01J5/10 , H01L21/00 , H01L23/34 , G01J5/28 , F27B1/26 , F27D19/00 , H01L21/66
CPC分类号： H01L21/67248 , C30B25/10 , C30B25/16 , G01J5/0003 , G01J5/10 , H01L21/67115 , H01L23/34 , H01L23/345 , H01L2924/0002
摘要： A method and apparatus for uniformly ramping the temperatures of a wafer and a susceptor using a first heat source primarily directed at the wafer and a second heat source primarily directed at the susceptor while keeping the wafer at approximately the same temperature as the susceptor but measuring only the temperature of the susceptor. The method comprises the steps of: determining and storing a plurality of steady-state temperatures of the susceptor as a function of the total power provided to the first heat source and the second heat source; ramping the susceptor from an initial temperature to a final temperature; and heating the wafer from the initial temperature to the final temperature, wherein the power to the first heat source is determined from the susceptor's temperature and the plurality of steady-state temperatures of the wafer and susceptor as a function of total power.
摘要翻译：一种用于使用主要指向晶片的第一热源和主要指向基座的第二热源均匀地斜升晶片和基座的温度的方法和装置，同时将晶片保持在与基座大致相同的温度，但仅测量感受器的温度。该方法包括以下步骤：根据提供给第一热源和第二热源的总功率来确定和存储基座的多个稳态温度; 将基座从初始温度斜升到最终温度; 以及将晶片从初始温度加热到最终温度，其中根据基座的温度和作为总功率的函数的晶片和基座的多个稳态温度来确定对第一热源的功率。

20. 发明授权

US5645646A Susceptor for deposition apparatus 失效
标题翻译：沉积装置的受体
公开(公告)号：US5645646A
公开(公告)日：1997-07-08
申请号：US752742
申请日：1996-11-14
申请人： Israel Beinglass , Mahalingam Venkatesan , Roger N. Anderson
发明人： Israel Beinglass , Mahalingam Venkatesan , Roger N. Anderson
IPC分类号： H01L21/687 , C23C16/00
CPC分类号： H01L21/6875 , H01L21/68735
摘要： An apparatus for depositing a material on a wafer includes a susceptor plate mounted in a deposition chamber. The chamber has a gas inlet and a gas exhaust. Means are provided for heating the susceptor plate. The susceptor plate has a plurality of support posts projecting from its top surface. The support posts are arranged to support a wafer thereon with the back surface of the wafer being spaced from the surface of the susceptor plate. The support posts are of a length so that the wafer is spaced from the susceptor plate a distance sufficient to allow deposition gas to flow and/or diffuse between the wafer and the susceptor plate, but still allow heat transfer from the susceptor plate to the wafer mainly by conduction. The susceptor plate is also provided with means, such as retaining pins or a recess, to prevent lateral movement of a wafer seated on the support posts.
摘要翻译：用于在晶片上沉积材料的设备包括安装在沉积室中的基座板。该室具有气体入口和排气。提供用于加热感受板的装置。基座板具有从其顶表面突出的多个支撑柱。支撑柱布置成在其上支撑晶片，其中晶片的后表面与基座板的表面间隔开。支撑柱具有长度，使得晶片与基座板间隔足以允许沉积气体在晶片和基座板之间流动和/或扩散的距离，但仍允许从基座板到晶片的热传递主要是通过传导。基座板还设置有诸如保持销或凹部的装置，以防止位于支撑柱上的晶片的横向移动。

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