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11. 发明申请

US20070161250A1 Method for electrochemically mechanically polishing a conductive material on a substrate 失效
标题翻译：在基板上进行电化学机械研磨导电材料的方法
公开(公告)号：US20070161250A1
公开(公告)日：2007-07-12
申请号：US11328958
申请日：2006-01-09
申请人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
发明人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , B23H5/08 , H01L21/32125
摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.
摘要翻译：本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

12. 发明申请

US20070151866A1 Substrate polishing with surface pretreatment 审中-公开
标题翻译：基材抛光与表面预处理
公开(公告)号：US20070151866A1
公开(公告)日：2007-07-05
申请号：US11326636
申请日：2006-01-05
申请人： Zhihong Wang , You Wang , Renhe Jia , Stan Tsai
发明人： Zhihong Wang , You Wang , Renhe Jia , Stan Tsai
IPC分类号： B23H9/00 , B23H5/06 , C25F7/00 , B23H7/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02
摘要： A method for processing a surface of a substrate is provided. In one embodiment, the method includes pretreating a conductive layer of the substrate by exposing the substrate to a pretreatment fluid, and planarizing the pre-treated substrate in the system.
摘要翻译：提供了一种处理基板表面的方法。在一个实施例中，该方法包括通过将衬底暴露于预处理流体并且对系统中的预处理衬底进行平坦化来预处理衬底的导电层。

13. 发明申请

US20050218010A1 Process and composition for conductive material removal by electrochemical mechanical polishing 失效
标题翻译：通过电化学机械抛光去除导电材料的工艺和组成
公开(公告)号：US20050218010A1
公开(公告)日：2005-10-06
申请号：US11123274
申请日：2005-05-05
申请人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan Tsai , Yongqi Hu , Yuan Tian , Liang-Yuh Chen
发明人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan Tsai , Yongqi Hu , Yuan Tian , Liang-Yuh Chen
IPC分类号： B23H3/08 , B23H5/08 , C09G1/02 , C25F3/02 , H01L21/321 , H01L21/768
CPC分类号： C25F3/02 , B23H5/08 , C09G1/02 , H01L21/32125 , H01L21/7684
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

14. 发明申请

US20070151867A1 Apparatus and a method for electrochemical mechanical processing with fluid flow assist elements 审中-公开
标题翻译：用流体流动辅助元件进行电化学机械处理的装置和方法
公开(公告)号：US20070151867A1
公开(公告)日：2007-07-05
申请号：US11431231
申请日：2006-05-10
申请人： Yongqi Hu , Stan Tsai , Gerald Alonzo , Lakshmanan Karuppiah
发明人： Yongqi Hu , Stan Tsai , Gerald Alonzo , Lakshmanan Karuppiah
IPC分类号： B23H9/14 , C25F3/00 , B23H3/00
CPC分类号： C25F7/00 , B23H5/08 , B24B37/20 , Y10T29/49155 , Y10T29/49156
摘要： An apparatus and a method with fluid flow assist elements for electrochemical mechanical processing is provided in this invention. In one embodiment, the apparatus includes a first conductive layer having an upper surface adapted to contact a substrate, a second conductive layer disposed below the first conductive layer, an isolation layer disposed between the conductive layers, and a plurality of apertures, each having a first end formed through the first conductive layer and a second end formed through the second conductive layer, wherein the second ends of at least two apertures are laterally coupled by a channel.
摘要翻译：本发明提供了一种具有用于电化学机械加工的流体流动辅助元件的装置和方法。在一个实施例中，该装置包括具有适于接触基板的上表面的第一导电层，设置在第一导电层下方的第二导电层，设置在导电层之间的隔离层和多个孔，每个孔具有通过第一导电层形成的第一端和通过第二导电层形成的第二端，其中至少两个孔的第二端由通道横向耦合。

15. 发明申请

US20070108066A1 VOLTAGE MODE CURRENT CONTROL 审中-公开
标题翻译：电压模式电流控制
公开(公告)号：US20070108066A1
公开(公告)日：2007-05-17
申请号：US11553438
申请日：2006-10-26
申请人： Stan Tsai , Lakshmanan Karuppiah
发明人： Stan Tsai , Lakshmanan Karuppiah
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , B24B37/042 , B24B49/10
摘要： Methods and apparatus for voltage-mode current control. A computer implemented method includes: (a) commencing a ECMP polishing step on a conductive film of a substrate; (b) setting a current output voltage of a voltage source, the current output voltage being set in accordance with a recipe for the ECMP polishing step; (c) measuring current flow through the conductive film; (d) calculating, based on the measured current flow, a current polishing rate; (e) determining whether an adjustment to the current output voltage is needed, the determining being based on a target polishing rate; and (f) when an adjustment is determined to be needed, calculating and effecting the adjustment to the current output voltage.
摘要翻译：电压模式电流控制的方法和装置。计算机实施方法包括：（a）在基板的导电膜上开始ECMP抛光步骤; （b）设定电压源的电流输出电压，根据ECMP研磨工序的配方设定电流输出电压; （c）测量通过导电膜的电流; （d）基于所测量的电流计算当前的抛光速率; （e）确定是否需要对当前输出电压的调整，所述确定基于目标抛光速率; 和（f）当确定需要调整时，计算并对当前输出电压进行调整。

16. 发明申请

US20070144915A1 PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光过程中用于剥离基材的方法和组合
公开(公告)号：US20070144915A1
公开(公告)日：2007-06-28
申请号：US11613918
申请日：2006-12-20
申请人： Yuan Tian , Renhe Jia , Feng Liu , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Robert Ewald
发明人： Yuan Tian , Renhe Jia , Feng Liu , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Robert Ewald
IPC分类号： B23H7/00 , H05K3/07
CPC分类号： C25F3/02 , B23H5/08 , H01L21/32125
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a method of electrochemically processing a substrate using a conductive polishing article is provided. The method includes disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising a cathode coupled to the conductive polishing article and an anode, wherein the substrate is in electrical contact with the anode, supplying a polishing composition comprising a cathodic inhibitor and an anodic inhibitor, forming a protective film on the cathode to prevent corrosion of the cathode, and polishing the substrate. In another embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes a corrosion inhibitor selected from the group of an amino acid based inhibitor, a polymeric based corrosion inhibitor, an oxidizer, a chelating inhibitor or combinations thereof.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施例中，提供了使用导电抛光制品电化学处理衬底的方法。该方法包括将包括形成在其上的导电材料层的衬底放置在包括耦合到导电抛光制品的阴极和阳极的处理装置中，其中衬底与阳极电接触，提供包含阴极抑制剂的抛光组合物，阳极抑制剂，在阴极上形成保护膜以防止阴极腐蚀，并抛光衬底。在另一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括选自氨基酸基抑制剂，聚合物基腐蚀抑制剂，氧化剂，螯合抑制剂或组合的腐蚀抑制剂其中。

17. 发明申请

US20060021974A1 Method and composition for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060021974A1
公开(公告)日：2006-02-02
申请号：US10948958
申请日：2004-09-24
申请人： Feng Liu , Stan Tsai , Martin Wohlert , Yuan Tian , Renhe Jia , Yongqi Hu , Liang-Yuh Chen
发明人： Feng Liu , Stan Tsai , Martin Wohlert , Yuan Tian , Renhe Jia , Yongqi Hu , Liang-Yuh Chen
IPC分类号： C03C15/00 , C09K13/00
CPC分类号： H01L21/7684 , C25F3/16 , C25F3/26 , H01L21/32125
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，提供一种组合物，用于从包括硫酸或衍生物，磷酸或衍生物的底物表面至少去除导电材料，包括有机盐的第一螯合剂，pH调节剂以提供约2 约10和溶剂。组合物还可以包括第二螯合剂。组合物可以用于单步或两步电化学机械平面化工艺。本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

18. 发明申请

US20050077188A1 Endpoint for electrochemical processing 审中-公开
标题翻译：电化学处理终点
公开(公告)号：US20050077188A1
公开(公告)日：2005-04-14
申请号：US10940603
申请日：2004-09-14
申请人： Daxin Mao , Renhe Jia , Zhihong Wang , Yuan Tian , Feng Liu , Vladimir Galburt , Sen Ko , Stan Tsai , Liang-Yuh Chen
发明人： Daxin Mao , Renhe Jia , Zhihong Wang , Yuan Tian , Feng Liu , Vladimir Galburt , Sen Ko , Stan Tsai , Liang-Yuh Chen
IPC分类号： B23H5/08 , B24B37/013 , B24B49/04 , B24B49/10 , C25F7/00 , H01L21/304 , H01L21/3063 , C25F3/00
CPC分类号： B24B37/013 , B23H5/08 , B24B49/04 , B24B49/10
摘要： A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.
摘要翻译：提供了一种用于电化学处理衬底的方法和设备。在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在基底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，在第一次电化学过程中电化学去除暴露层的一部分在屏障处理站中的处理步骤，在暴露的阻挡材料层的穿透之前或之前检测第一电化学处理步骤的端点，在屏障处理站中的第二电化学处理步骤中电化学处理阻挡材料的暴露层并且检测第二电化学处理步骤的端点。

19. 发明申请

US20060219663A1 Metal CMP process on one or more polishing stations using slurries with oxidizers 审中-公开
标题翻译：使用具有氧化剂的浆料在一个或多个抛光站上进行金属CMP处理
公开(公告)号：US20060219663A1
公开(公告)日：2006-10-05
申请号：US11338146
申请日：2006-01-23
申请人： Shi-Ping Wang , Martin Wohlert , Alain Duboust , Renhe Jia , Feng Liu , Yuan Tian , Liang-Yuh Chen , Stan Tsai , Wei-Yung Hsu
发明人： Shi-Ping Wang , Martin Wohlert , Alain Duboust , Renhe Jia , Feng Liu , Yuan Tian , Liang-Yuh Chen , Stan Tsai , Wei-Yung Hsu
IPC分类号： C03C15/00 , H01L21/302 , B44C1/22 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02 , C23F3/04 , C23F3/06 , H01L21/32125 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. In one aspect, a full sequence electrochemical mechanical planarization technique is provided. In another aspect, a hybrid planarization technique using combination of at least one chemical mechanical polishing process and at least one electrochemical mechanical polishing process is provided. In addition, a multi-step polishing process for polishing a substrate surface using at least two oxidizers in one or more polishing composition is described. The polishing composition may be used in the full sequence or the hybrid planarization technique. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface with a reduction in planarization defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料和阻挡材料的方法。一方面，提供了全序列电化学机械平面化技术。在另一方面，提供了使用至少一种化学机械抛光工艺和至少一种电化学机械抛光工艺的组合的混合平面化技术。此外，描述了在一种或多种研磨组合物中使用至少两种氧化剂来研磨衬底表面的多步抛光方法。抛光组合物可以以全序或混合平面化技术使用。本文所述的抛光组合物和方法改善了材料从衬底表面的有效去除速率，同时减小了平坦化缺陷。

20. 发明申请

US20060169674A1 Method and composition for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060169674A1
公开(公告)日：2006-08-03
申请号：US11340831
申请日：2006-01-26
申请人： Daxin Mao , Renhe Jia , Stan Tsai , Junzi Zhao , Laksh Karuppiah , Liang-Yuh Chen
发明人： Daxin Mao , Renhe Jia , Stan Tsai , Junzi Zhao , Laksh Karuppiah , Liang-Yuh Chen
IPC分类号： C09K13/00 , C09K13/02 , H01L21/461 , B44C1/22 , C03C25/68
CPC分类号： C09G1/04 , C25F3/08 , H01L21/32125
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including one or more inorganic acids, a pH adjusting agent, a chelating agent, a passivating polymeric material, a pH between about 5 and about 10, and a solvent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，提供了一种组合物，用于从基材表面除去至少一种导电材料，所述基材表面包括一种或多种无机酸，pH调节剂，螯合剂，钝化聚合物材料，约5至约10的pH，以及溶剂。组合物可以用于单步或两步电化学机械平面化工艺。本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

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