专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050218010A1 Process and composition for conductive material removal by electrochemical mechanical polishing 失效
标题翻译：通过电化学机械抛光去除导电材料的工艺和组成
公开(公告)号：US20050218010A1
公开(公告)日：2005-10-06
申请号：US11123274
申请日：2005-05-05
申请人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan Tsai , Yongqi Hu , Yuan Tian , Liang-Yuh Chen
发明人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan Tsai , Yongqi Hu , Yuan Tian , Liang-Yuh Chen
IPC分类号： B23H3/08 , B23H5/08 , C09G1/02 , C25F3/02 , H01L21/321 , H01L21/768
CPC分类号： C25F3/02 , B23H5/08 , C09G1/02 , H01L21/32125 , H01L21/7684
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

2. 发明申请

US20060046623A1 Method and apparatus for reduced wear polishing pad conditioning 失效
标题翻译：降低磨损抛光垫调理的方法和装置
公开(公告)号：US20060046623A1
公开(公告)日：2006-03-02
申请号：US11209167
申请日：2005-08-22
申请人： Yan Wang , Stan Tsai , Yongqi Hu , Feng Liu , Liang-Yuh Chen , Daxin Mao , Huyen Tran , Martin Wohlert , Renhe Jia , Yuan Tian
发明人： Yan Wang , Stan Tsai , Yongqi Hu , Feng Liu , Liang-Yuh Chen , Daxin Mao , Huyen Tran , Martin Wohlert , Renhe Jia , Yuan Tian
IPC分类号： B24B1/00
CPC分类号： B24B53/017 , B23H5/08
摘要： Embodiments of a conditioning head for in-situ conditioning and/or cleaning a processing pad of a CMP, ECMP, or other processing system are provided. In one embodiment, the conditioning head includes a brush disposed in a central cavity. A cleaning fluid is provided through the central cavity of the conditioning head to a processing pad. The brush spins and moves laterally across the surface of the processing pad. The cleaning solution dispensed through the conditioning head dissolves by-products of the processing operation while the brush gently wipes the processing pad. A lip of the conditioning head retains the cleaning fluid and cleaning waste, thereby minimizing contamination of the area outside of the conditioning head. The cleaning waste is removed from the processing pad via passages formed near the outer periphery of the conditioning head.
摘要翻译：提供了用于原位调理和/或清洁CMP，ECMP或其它处理系统的处理垫的调节头的实施例。在一个实施例中，调节头包括设置在中心腔中的刷子。清洁流体通过调节头的中心空腔设置到处理垫。刷子旋转并横向移动到处理垫的表面上。通过调节头分配的清洁溶液溶解处理操作的副产物，同时刷子轻轻地擦拭处理垫。调节头的唇缘保持清洁流体和清洁废物，从而最小化调节头外部区域的污染。清洁废物通过在调节头的外周附近形成的通道从处理垫移除。

3. 发明授权

US07582564B2 Process and composition for conductive material removal by electrochemical mechanical polishing 失效
标题翻译：通过电化学机械抛光去除导电材料的工艺和组成
公开(公告)号：US07582564B2
公开(公告)日：2009-09-01
申请号：US11123274
申请日：2005-05-05
申请人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan D. Tsai , Yongqi Hu , Yuan A. Tian , Liang-Yuh Chen
发明人： Zhihong Wang , You Wang , Daxin Mao , Renhe Jia , Stan D. Tsai , Yongqi Hu , Yuan A. Tian , Liang-Yuh Chen
IPC分类号： H01L21/302
CPC分类号： C25F3/02 , B23H5/08 , C09G1/02 , H01L21/32125 , H01L21/7684
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

4. 发明申请

US20060196778A1 Tungsten electroprocessing 审中-公开
标题翻译：钨电加工
公开(公告)号：US20060196778A1
公开(公告)日：2006-09-07
申请号：US11342179
申请日：2006-01-27
申请人： Renhe Jia , Zhihong Wang , Yuan Tian , Huyen Tran , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , Zhihong Wang , Yuan Tian , Huyen Tran , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： B23H9/00 , C25D17/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/08
摘要： Methods for polishing tungsten are provided. During ECMP, increasing the voltage to the pad is not always enough to increase the polishing rate. When polishing tungsten, simply increasing the applied voltage will, in some cases, actually decrease the removal rate. By increasing the down force pressure between the polishing pad and the substrate, the applied voltage, and the rotation speed of the substrate and the polishing pad, the tungsten removal rate will also increase.
摘要翻译：提供钨的抛光方法。在ECMP期间，增加焊盘的电压并不总是足以提高抛光速率。抛光钨时，简单地增加施加的电压将在某些情况下实际上降低去除率。通过增加抛光垫和基板之间的下压力，施加电压以及基板和抛光垫的旋转速度，钨去除率也将增加。

5. 发明申请

US20050077188A1 Endpoint for electrochemical processing 审中-公开
标题翻译：电化学处理终点
公开(公告)号：US20050077188A1
公开(公告)日：2005-04-14
申请号：US10940603
申请日：2004-09-14
申请人： Daxin Mao , Renhe Jia , Zhihong Wang , Yuan Tian , Feng Liu , Vladimir Galburt , Sen Ko , Stan Tsai , Liang-Yuh Chen
发明人： Daxin Mao , Renhe Jia , Zhihong Wang , Yuan Tian , Feng Liu , Vladimir Galburt , Sen Ko , Stan Tsai , Liang-Yuh Chen
IPC分类号： B23H5/08 , B24B37/013 , B24B49/04 , B24B49/10 , C25F7/00 , H01L21/304 , H01L21/3063 , C25F3/00
CPC分类号： B24B37/013 , B23H5/08 , B24B49/04 , B24B49/10
摘要： A method and apparatus for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station, detecting an endpoint of the first electrochemical processing step at or just prior to breakthrough of the exposed layer of barrier material, electrochemically processing the exposed layer of barrier material in a second electrochemical processing step in the barrier processing station, and detecting an endpoint of the second electrochemical processing step.
摘要翻译：提供了一种用于电化学处理衬底的方法和设备。在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在基底上的暴露的阻挡材料层与电极之间建立通过电解质的导电路径，在第一次电化学过程中电化学去除暴露层的一部分在屏障处理站中的处理步骤，在暴露的阻挡材料层的穿透之前或之前检测第一电化学处理步骤的端点，在屏障处理站中的第二电化学处理步骤中电化学处理阻挡材料的暴露层并且检测第二电化学处理步骤的端点。

6. 发明申请

US20060249394A1 Process and composition for electrochemical mechanical polishing 审中-公开
标题翻译：电化学机械抛光的工艺和组成
公开(公告)号：US20060249394A1
公开(公告)日：2006-11-09
申请号：US11251630
申请日：2005-10-14
申请人： Renhe Jia , You Wang , Zhihong Wang , Jie Diao , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , You Wang , Zhihong Wang , Jie Diao , Daxin Mao , Stan Tsai , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： C09K13/00 , B23H9/00 , C25F3/00 , C09K13/06
CPC分类号： C25F3/02 , B23H5/08 , C09K3/1463
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，溶剂和 pH为约3至约10.该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

7. 发明申请

US20070144915A1 PROCESS AND COMPOSITION FOR PASSIVATING A SUBSTRATE DURING ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光过程中用于剥离基材的方法和组合
公开(公告)号：US20070144915A1
公开(公告)日：2007-06-28
申请号：US11613918
申请日：2006-12-20
申请人： Yuan Tian , Renhe Jia , Feng Liu , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Robert Ewald
发明人： Yuan Tian , Renhe Jia , Feng Liu , Yongqi Hu , Stan Tsai , Liang-Yuh Chen , Robert Ewald
IPC分类号： B23H7/00 , H05K3/07
CPC分类号： C25F3/02 , B23H5/08 , H01L21/32125
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a method of electrochemically processing a substrate using a conductive polishing article is provided. The method includes disposing a substrate having a conductive material layer formed thereon in a process apparatus comprising a cathode coupled to the conductive polishing article and an anode, wherein the substrate is in electrical contact with the anode, supplying a polishing composition comprising a cathodic inhibitor and an anodic inhibitor, forming a protective film on the cathode to prevent corrosion of the cathode, and polishing the substrate. In another embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes a corrosion inhibitor selected from the group of an amino acid based inhibitor, a polymeric based corrosion inhibitor, an oxidizer, a chelating inhibitor or combinations thereof.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施例中，提供了使用导电抛光制品电化学处理衬底的方法。该方法包括将包括形成在其上的导电材料层的衬底放置在包括耦合到导电抛光制品的阴极和阳极的处理装置中，其中衬底与阳极电接触，提供包含阴极抑制剂的抛光组合物，阳极抑制剂，在阴极上形成保护膜以防止阴极腐蚀，并抛光衬底。在另一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括选自氨基酸基抑制剂，聚合物基腐蚀抑制剂，氧化剂，螯合抑制剂或组合的腐蚀抑制剂其中。

8. 发明申请

US20060021974A1 Method and composition for polishing a substrate 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：US20060021974A1
公开(公告)日：2006-02-02
申请号：US10948958
申请日：2004-09-24
申请人： Feng Liu , Stan Tsai , Martin Wohlert , Yuan Tian , Renhe Jia , Yongqi Hu , Liang-Yuh Chen
发明人： Feng Liu , Stan Tsai , Martin Wohlert , Yuan Tian , Renhe Jia , Yongqi Hu , Liang-Yuh Chen
IPC分类号： C03C15/00 , C09K13/00
CPC分类号： H01L21/7684 , C25F3/16 , C25F3/26 , H01L21/32125
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including sulfuric acid or derivative, phosphoric acid or derivative, a first chelating agent including an organic salt, a pH adjusting agent to provide a pH between about 2 and about 10 and a solvent. The composition may further include a second chelating agent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.
摘要翻译：提供了抛光组合物和从衬底表面去除导电材料的方法。在一个方面，提供一种组合物，用于从包括硫酸或衍生物，磷酸或衍生物的底物表面至少去除导电材料，包括有机盐的第一螯合剂，pH调节剂以提供约2 约10和溶剂。组合物还可以包括第二螯合剂。组合物可以用于单步或两步电化学机械平面化工艺。本文所述的抛光组合物和方法提高了材料从衬底表面（例如钨）的有效去除速率，同时平坦化型缺陷的减少。

9. 发明申请

US20070235344A1 Process for high copper removal rate with good planarization and surface finish 审中-公开
标题翻译：具有良好的平坦化和表面光洁度的高铜去除率的工艺
公开(公告)号：US20070235344A1
公开(公告)日：2007-10-11
申请号：US11399560
申请日：2006-04-06
申请人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
发明人： Renhe Jia , You Wang , Gerald Alonzo , Yongqi Hu , Zhihong Wang , Jie Diao , Stan D Tsai , Alpay Yilmaz , Lakshmanan Karuppiah , Liang-Yuh Chen
IPC分类号： B23H5/08
CPC分类号： B23H5/08 , C25F3/02 , H01L21/32125
摘要： A method for electrochemical mechanical polishing (ECMP) is disclosed. The polishing rate and surface finish of the layer on the wafer are improved by controlling the surface speed of both the platen and head, controlling the current applied to the pad, and preselecting the density of the perforations on the fully conductive polishing pad. ECMP produces much higher removal rates, good surface finishes, and good planarization efficiency at a lower down force. Generally, increasing the surface speed of both the platen and the head will increase the surface smoothness. Also, increasing the current density on the wafer will increase the surface smoothness. There is virtually no difference in the smoothness of the wafer surface between the center, middle, and edge of the wafer. For copper, removal rates of 10,000 Å/min and greater can be achieved.
摘要翻译：公开了一种用于电化学机械抛光（ECMP）的方法。通过控制压板和头部的表面速度，控制施加到垫的电流以及预选在全导电抛光垫上的穿孔密度来提高晶片上层的抛光速率和表面光洁度。 ECMP在较低的下压力下产生高得多的去除率，良好的表面光洁度和良好的平面化效率。通常，增加压板和头部的表面速度将增加表面平滑度。此外，增加晶片上的电流密度将增加表面平滑度。在晶片的中心，中间和边缘之间的晶片表面的平滑度几乎没有差别。对于铜，可以实现10,000 / min以上的去除率。

10. 发明申请

US20070161250A1 Method for electrochemically mechanically polishing a conductive material on a substrate 失效
标题翻译：在基板上进行电化学机械研磨导电材料的方法
公开(公告)号：US20070161250A1
公开(公告)日：2007-07-12
申请号：US11328958
申请日：2006-01-09
申请人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
发明人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , B23H5/08 , H01L21/32125
摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.
摘要翻译：本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式