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11. 发明申请

US20090180506A1 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20090180506A1
公开(公告)日：2009-07-16
申请号：US12318421
申请日：2008-12-29
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/183
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
摘要翻译：提供了能够提供高输出基本横模的垂直腔面发射激光器（VCSEL），同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。电流限制层具有电流注入区域和电流限制区域。横模调整部具有高反射面积和低反射面积。高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。高反射率区域的中心点布置在与第一相对区域不同的区域中。在与电流注入区域相对的相对区域中，在没有形成高反射率区域的区域中形成低反射率区域。

12. 发明申请

US20080240194A1 Vertical cavity surface emitting laser and method of manufacturing it 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US20080240194A1
公开(公告)日：2008-10-02
申请号：US12076791
申请日：2008-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
IPC分类号： H01S5/183 , H01L33/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/1017 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18391 , H01S2301/14
摘要： A VSCEL capable of being easily and inexpensively manufactured and of stabilizing the polarization direction of laser light in one direction is provided. The Vertical Cavity Surface Emitting Laser includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflector in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
摘要翻译：提供了能够容易且廉价地制造并且在一个方向上稳定激光的偏振方向的VSCEL。垂直空腔表面发射激光器包括从基板侧在基板上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层以及设置在所述一对槽的每个侧面上的第一氧化区域。

13. 发明申请

US20100200868A1 Semiconductor Light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20100200868A1
公开(公告)日：2010-08-12
申请号：US12657809
申请日：2010-01-28
申请人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
发明人： Yuji Masui , Rintaro Koda , Osamu Maeda , Takahiro Arakida , Terukazu Naruse , Naoki Jogan
IPC分类号： H01L33/00
CPC分类号： H01S5/0264
摘要： A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate.
摘要翻译：半导体发光器件包括具有第一多层反射器，具有发光区域的有源层和按照所述顺序的第二多层反射器的半导体发光元件; 相对于所述半导体发光元件与所述第一多层反射体相对设置并且包括被配置为吸收从所述发光区域发射的光的光吸收层的半导体光检测元件; 设置在所述半导体发光元件和所述半导体光检测元件之间的透明基板; 第一金属层，其在包括与所述发光区域相对的区域的区域中具有第一开口，并且接合所述半导体发光元件和所述基板; 以及第二金属层，其在包括与发光区域相对的区域的区域中具有第二开口，并且接合半导体光检测元件和基板。

14. 发明申请

US20100046565A1 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US20100046565A1
公开(公告)日：2010-02-25
申请号：US12458962
申请日：2009-07-28
申请人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
发明人： Yuji Masui , Takahiro Arakida , Rintaro Koda , Osamu Maeda , Tomoyuki Oki , Naoki Jogan
IPC分类号： H01S5/183 , H01S5/028
CPC分类号： H01S5/18336 , H01S5/0655 , H01S5/18311 , H01S5/18316 , H01S5/18358 , H01S2301/166
摘要： A vertical cavity surface emitting laser includes a layer-stack structure including, on a substrate, a transverse-mode adjustment layer, a first multilayer reflecting mirror, an active layer having a light emission region, and a second multilayer reflecting mirror in order from the substrate side, and including a current confinement layer in which a current injection region is formed in a region corresponding to the light emission region in the first multilayer reflecting mirror, between the first multilayer reflecting mirror and the active layer, between the active layer and the second multilayer reflecting mirror, or in the second multilayer reflecting mirror. In the transverse-mode adjustment layer, reflectance at an oscillation wavelength in the region opposite to a center of the light emission region is higher than that at an oscillation wavelength in the region opposite to an outer edge of the light emission region.
摘要翻译：垂直腔表面发射激光器包括层叠结构，其包括在基板上的横向模式调整层，第一多层反射镜，具有发光区域的有源层和第二多层反射镜，从并且包括电流限制层，其中在与第一多层反射镜中的发光区域对应的区域中在第一多层反射镜和有源层之间形成电流注入区域，在有源层和第二多层反射镜，或第二多层反射镜。在横模调整层中，与发光区域的中心相反的区域的振荡波长的反射率高于与发光区域的外缘相反的区域的振荡波长的反射率。

15. 发明授权

US08582615B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08582615B2
公开(公告)日：2013-11-12
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/026 , H01S5/187
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

16. 发明授权

US08077752B2 Vertical cavity surface emitting laser 有权
标题翻译：垂直腔表面发射激光
公开(公告)号：US08077752B2
公开(公告)日：2011-12-13
申请号：US12318421
申请日：2008-12-29
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.
摘要翻译：提供了能够提供高输出基本横模的垂直腔面发射激光器（VCSEL），同时防止高阶横模的振荡。 VCSEL包括形成在半导体层上的包括有源层和电流限制层的半导体层和横向模式调整部。电流限制层具有电流注入区域和电流限制区域。横模调整部具有高反射面积和低反射面积。高反射率区域形成在包括与电流注入区域的中心点相对的第一相对区域的区域中。高反射率区域的中心点布置在与第一相对区域不同的区域中。在与电流注入区域相对的相对区域中，在没有形成高反射率区域的区域中形成低反射率区域。

17. 发明申请

US20110243174A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20110243174A1
公开(公告)日：2011-10-06
申请号：US13064424
申请日：2011-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
发明人： Osamu Maeda , Masaki Shiozaki , Susumu Sato , Takahiro Arakida , Shiro Uchida
IPC分类号： H01S5/32
CPC分类号： H01S5/18311 , H01S5/02276 , H01S5/0261 , H01S5/18391 , H01S5/423 , H01S2301/18
摘要： There is provided a semiconductor light-emitting device including a temperature detecting section which is allowed to accurately estimate an element temperature. The semiconductor light-emitting device includes: one or a plurality of surface-emitting semiconductor light-emitting sections and one or a plurality of semiconductor temperature detecting sections on a semiconductor substrate, the surface-emitting semiconductor light-emitting sections emitting light in a direction normal to the semiconductor substrate, the semiconductor temperature detecting sections not emitting light to outside. The semiconductor light-emitting sections and the semiconductor temperature detecting sections have a PN junction or a PIN junction in a direction normal to the semiconductor substrate.
摘要翻译：提供了一种半导体发光装置，其包括允许精确估计元件温度的温度检测部。半导体发光器件包括：半导体衬底上的一个或多个表面发射半导体发光部分和一个或多个半导体温度检测部分，表面发射半导体发光部分沿方向发光垂直于半导体衬底的半导体温度检测部分不向外部发光。半导体发光部和半导体温度检测部在与半导体基板垂直的方向上具有PN结或PIN结。

18. 发明授权

US07675956B2 Vertical cavity surface emitting laser and method for manufacturing the same 失效
标题翻译：垂直腔表面发射激光器及其制造方法
公开(公告)号：US07675956B2
公开(公告)日：2010-03-09
申请号：US12076791
申请日：2008-03-24
申请人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Norihiko Yamaguchi , Yoshinori Yamauchi , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18355 , H01S5/0425 , H01S5/1017 , H01S5/18311 , H01S5/18313 , H01S5/18333 , H01S5/18391 , H01S2301/14
摘要： A Vertical Cavity Surface Emitting Laser capable of being easily and inexpensively manufactured and stabilizing the polarization direction of laser light in one direction is provided. The VCSEL includes a semiconductor lamination structure including a first multilayer film reflector, an active layer having a light emitting region, and a second multilayer film reflectors, in this order over a substrate from the substrate side. The semiconductor lamination structure has a pair of grooves provided with a region opposed to the light emitting region in between, and one or a plurality of first oxidation layers including a first non-oxidation region provided at least in a region opposed to the light emitting region and a first oxidation region provided on each side face of the pair of grooves.
摘要翻译：提供了能够容易且廉价地制造并稳定激光在一个方向的偏振方向的垂直腔面发射激光器。 VCSEL包括从衬底侧在衬底上依次包括第一多层膜反射器，具有发光区域的有源层和第二多层膜反射器的半导体层叠结构。半导体层叠结构具有设置有与其间的发光区域相对的区域的一对沟槽，以及包括至少设置在与发光区域相对的区域中的第一非氧化区域的一个或多个第一氧化层以及设置在所述一对槽的每个侧面上的第一氧化区域。

19. 发明授权

US08363687B2 Vertical cavity surface emitting laser 有权
公开(公告)号：US08363687B2
公开(公告)日：2013-01-29
申请号：US13064788
申请日：2011-04-15
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/00
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

20. 发明申请

US20110194579A1 Vertical cavity surface emitting laser 有权
公开(公告)号：US20110194579A1
公开(公告)日：2011-08-11
申请号：US13064788
申请日：2011-04-15
申请人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
发明人： Osamu Maeda , Masaki Shiozaki , Takahiro Arakida
IPC分类号： H01S5/183
CPC分类号： H01S5/18394 , H01S5/0425 , H01S5/18311 , H01S5/18327 , H01S5/18347 , H01S5/18358 , H01S2301/166 , H01S2301/176
摘要： A Vertical Cavity Surface Emitting Laser (VCSEL) capable of providing high output of fundamental transverse mode while preventing oscillation of high-order transverse mode is provided. The VCSEL includes a semiconductor layer including an active layer and a current confinement layer, and a transverse mode adjustment section formed on the semiconductor layer. The current confinement layer has a current injection region and a current confinement region. The transverse mode adjustment section has a high reflectance area and a low reflectance area. The high reflectance area is formed in a region including a first opposed region opposing to a center point of the current injection region. A center point of the high reflectance area is arranged in a region different from the first opposed region. The low reflectance area is formed in a region where the high reflectance area is not formed, in an opposed region opposing to the current injection region.

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