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11. 发明授权

US08319254B2 Micro-electromechanical system devices 有权
标题翻译：微机电系统设备
公开(公告)号：US08319254B2
公开(公告)日：2012-11-27
申请号：US13027209
申请日：2011-02-14
申请人： Scott G. Adams , Andrew J. Minnick , Charles W. Blackmer , Mollie K. Devoe
发明人： Scott G. Adams , Andrew J. Minnick , Charles W. Blackmer , Mollie K. Devoe
IPC分类号： H01L29/74
CPC分类号： B81B3/0008 , B81B2201/0235 , B81B2207/07 , G01P15/0802 , H01H59/0009 , H01L29/747 , H01L29/87
摘要： A micro-electromechanical system (MEMS) device includes a substrate, a first beam, a second beam, and a third beam. The first beam includes first and second portions separated by an isolation joint. The first and second portions each comprise a semiconductor and a first dielectric layer. An electrically conductive trace is mechanically coupled to the first beam and electrically coupled to the second portion's semiconductor but not the first portion's semiconductor. The second beam includes a second dielectric layer. The profile of each of the first second, and third beams has been formed by a dry etch. A cavity separates a surface of the substrate from the first, second, and third beams. The cavity has been formed by a dry etch. A side wall of each of the first, second, and third beams has substantially no dielectric layer disposed thereon, and the dielectric layer has been removed by a vapor-phase etch.
摘要翻译：微机电系统（MEMS）装置包括基板，第一光束，第二光束和第三光束。第一梁包括由隔离接头隔开的第一和第二部分。第一和第二部分各自包括半导体和第一介电层。导电迹线机械耦合到第一光束并且电耦合到第二部分的半导体，但不耦合到第一部分的半导体。第二光束包括第二电介质层。通过干蚀刻形成第一和第三光束中的每一个的轮廓。空腔将基板的表面与第一，第二和第三梁分离。通过干蚀刻形成空腔。第一，第二和第三光束中的每一个的侧壁基本上没有设置在其上的电介质层，并且通过气相蚀刻去除介电层。

12. 发明申请

US20120205752A1 Strengthened Micro-Electromechanical System Devices and Methods of Making Thereof 有权
标题翻译：加强微机电系统设备及其制造方法
公开(公告)号：US20120205752A1
公开(公告)日：2012-08-16
申请号：US13027199
申请日：2011-02-14
申请人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
发明人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
IPC分类号： H01L29/84 , G06F17/50 , H01L21/00
CPC分类号： B81C1/00698 , B81B2203/0118 , B81B2203/033 , H01L21/76232
摘要： In an embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam, and can have a non-linear shape. In another embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam. The isolation joint can have a first portion, a second portion, and a bridge portion between the first portion and the second portion. The first and second portions of the isolation joint can each have a seam and a void, while the bridge portion can be solid.
摘要翻译：在一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间，并且可以具有非线性形状。在另一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间。隔离接头可以具有在第一部分和第二部分之间的第一部分，第二部分和桥接部分。隔离接头的第一和第二部分可各自具有接缝和空隙，而桥接部分可以是实心的。

13. 发明授权

US07728339B1 Boundary isolation for microelectromechanical devices 有权
标题翻译：微机电装置的边界隔离
公开(公告)号：US07728339B1
公开(公告)日：2010-06-01
申请号：US10139009
申请日：2002-05-03
申请人： Scott G. Adams , Tim Davis
发明人： Scott G. Adams , Tim Davis
IPC分类号： H01L29/207 , H01L21/00
CPC分类号： B81B3/0086 , B81B2201/045 , G02B26/0833
摘要： A micromechanical structure is described. A region of semiconductor material has a first surface, a second surface opposite to the first surface, and a lateral surface that surrounds the region of semiconductor material. Insulative material covers the first surface and the lateral surface of the region of semiconductor material to provide electrical isolation to the region of semiconductor material by forming a boundary. To form the micromechanical structure, a trench is etched in a semiconductor substrate to surround a region of the semiconductor substrate. A surface of the semiconductor substrate and the trench are oxidized to form a top oxide and a lateral oxide region. A backside of the semiconductor substrate is etched to expose a backside of the region of the semiconductor substrate and a portion of the lateral oxide.
摘要翻译：描述微机械结构。半导体材料的区域具有第一表面，与第一表面相对的第二表面和围绕半导体材料区域的侧表面。绝缘材料覆盖半导体材料区域的第一表面和侧表面，以通过形成边界来提供对半导体材料区域的电隔离。为了形成微机械结构，在半导体衬底中蚀刻沟槽以包围半导体衬底的区域。半导体衬底和沟槽的表面被氧化以形成顶部氧化物和横向氧化物区域。蚀刻半导体衬底的背面以暴露半导体衬底的区域的背面和一部分横向氧化物。

14. 发明授权

US07430909B2 Tri-axis accelerometer 有权
标题翻译：三轴加速度计
公开(公告)号：US07430909B2
公开(公告)日：2008-10-07
申请号：US11600175
申请日：2006-11-16
申请人： Scott G. Adams , Scott A. Miller , June Shen-Epstein , Keith Epstein
发明人： Scott G. Adams , Scott A. Miller , June Shen-Epstein , Keith Epstein
IPC分类号： G01P15/125
CPC分类号： G01P15/125 , G01P15/0802 , G01P15/18 , G01P2015/0828
摘要： In an embodiment of the present invention there is provided a micro-electromechanical (MEMS) accelerometer, including a substrate, a first sensor and a second sensor. The first sensor is configured to measure an acceleration along a first axis parallel to a plane of the substrate. The second sensor is configured to measure an acceleration along an axis perpendicular to the plane of the substrate. The second sensor comprises a first beam, a second beam and a single support structure. The single support structure supports the first and second beams relative to the substrate, wherein the first and second beams circumscribe the first sensor.
摘要翻译：在本发明的一个实施例中，提供了一种包括基板，第一传感器和第二传感器的微机电（MEMS）加速度计。第一传感器被配置为测量沿着平行于衬底的平面的第一轴的加速度。第二传感器被配置成沿垂直于基板的平面的轴测量加速度。第二传感器包括第一梁，第二梁和单个支撑结构。单个支撑结构相对于基板支撑第一和第二光束，其中第一和第二光束围绕第一传感器。

15. 发明授权

US06797589B2 Insulating micro-structure and method of manufacturing same 有权
标题翻译：绝缘微结构及其制造方法相同
公开(公告)号：US06797589B2
公开(公告)日：2004-09-28
申请号：US10322990
申请日：2002-12-18
申请人： Scott G. Adams , Scott A. Miller
发明人： Scott G. Adams , Scott A. Miller
IPC分类号： H01L2176
CPC分类号： H01L21/76229 , B81B3/0086 , B81B2203/033 , B81C1/00126 , B81C2201/0178 , H01L21/31612 , H01L21/31662 , H01L21/76208
摘要： A method of manufacturing an insulating micro-structure by etching a plurality of trenches in a silicon substrate and filling said trenches with insulating materials. The trenches are etched and then oxidized until completely or almost completely filled with silicon dioxide. Additional insulating material is then deposited as necessary to fill any remaining trenches, thus forming the structure. When the top of the structure is metallized, the insulating structure increases voltage resistance and reduces the capacitive coupling between the metal and the silicon substrate. Part of the silicon substrate underlying the structure is optionally removed further to reduce the capacitive coupling effect. Hybrid silicon-insulator structures can be formed to gain the effect of the benefits of the structure in three-dimensional configurations, and to permit metallization of more than one side of the structure.
摘要翻译：通过蚀刻硅衬底中的多个沟槽并用绝缘材料填充所述沟槽来制造绝缘微结构的方法。蚀刻沟槽，然后氧化直到完全或几乎完全充满二氧化硅。然后根据需要沉积额外的绝缘材料以填充任何剩余的沟槽，从而形成结构。当结构的顶部被金属化时，绝缘结构增加了电阻并降低了金属和硅衬底之间的电容耦合。可选地，进一步去除结构底层的硅衬底的一部分以降低电容耦合效应。可以形成混合硅 - 绝缘体结构以获得三维结构中结构的益处的效果，并且允许结构多于一侧的金属化。

16. 发明授权

US06756247B1 Integrated large area microstructures and micromechanical devices 失效
标题翻译：集成的大面积微结构和微机械装置
公开(公告)号：US06756247B1
公开(公告)日：2004-06-29
申请号：US10083600
申请日：2002-02-27
申请人： Timothy J. Davis , Scott G. Adams
发明人： Timothy J. Davis , Scott G. Adams
IPC分类号： H01L2100
CPC分类号： B81C1/00484 , B81B2203/0118 , B81B2203/0136
摘要： Deep reactive ion etching creates a single mask MEMS structure 20-50 &eegr;m deep on the top surface of a wafer. Thereafter, a bottom surface etch cooperates with trenches formed in the MEMS structure to provide through trenches which release large area structures of arbitrary shape and having a thickness up to that of the wafer. The released structure is supported in the wafer by MEMS support beams and motion is detected and affected by MEMS sensors and actuators, respectively.
摘要翻译：深反应离子蚀刻在晶片的顶部表面上形成深度为单层的膜结构20-50层。此后，底表面蚀刻与形成在MEMS结构中的沟槽配合，以提供通过沟槽，其释放任意形状的大面积结构并且具有比晶片的厚度更大的厚度。释放的结构通过MEMS支撑梁支撑在晶片中，运动分别被MEMS传感器和致动器检测和影响。

17. 发明授权

US08664731B2 Strengthened micro-electromechanical system devices and methods of making thereof 有权
标题翻译：加强微机电系统装置及其制造方法
公开(公告)号：US08664731B2
公开(公告)日：2014-03-04
申请号：US13027199
申请日：2011-02-14
申请人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
发明人： Charles W. Blackmer , Scott G. Adams , Andrew S. Hocking , Kristin J. Lynch , Ashish A. Shah
IPC分类号： H01L29/84
CPC分类号： B81C1/00698 , B81B2203/0118 , B81B2203/033 , H01L21/76232
摘要： In an embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam, and can have a non-linear shape. In another embodiment, a micro-electromechanical device can include a substrate, a beam, and an isolation joint. The beam can be suspended relative to a surface of the substrate. The isolation joint can be between a first portion and a second portion of the beam. The isolation joint can have a first portion, a second portion, and a bridge portion between the first portion and the second portion. The first and second portions of the isolation joint can each have a seam and a void, while the bridge portion can be solid.
摘要翻译：在一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间，并且可以具有非线性形状。在另一个实施例中，微机电装置可以包括基板，梁和隔离接头。梁可以相对于衬底的表面悬挂。隔离接头可以在梁的第一部分和第二部分之间。隔离接头可以具有在第一部分和第二部分之间的第一部分，第二部分和桥接部分。隔离接头的第一和第二部分可各自具有接缝和空隙，而桥接部分可以是实心的。

18. 发明授权

US07026899B2 Push/pull actuator for microstructures 有权
公开(公告)号：US07026899B2
公开(公告)日：2006-04-11
申请号：US10322941
申请日：2002-12-18
申请人： Scott G. Adams , Scott A. Miller
发明人： Scott G. Adams , Scott A. Miller
IPC分类号： H01F7/08
CPC分类号： H01L21/76208 , H01H59/0009
摘要： A relay for switching an electrical signal includes switching elements, an actuator for closing the switch, and an actuator for opening the switch, the latter two of which are mechanically decoupled when the relay is in a mechanical rest position. When a relay close signal is applied, the closing actuator electrostatically drives the switching elements to complete a signal path between two terminals for the switched signal. In the process of closing the switch, the opening actuator remains stationary, i.e., no mass is displaced. Application of a switch open signal electrostatically drives the opening actuator, optionally in combination with a mechanical restoring force on the closing actuator, to open the switch to break the signal conduction path for the switched signal.

19. 发明授权

US06792804B2 Sensor for measuring out-of-plane acceleration 有权
标题翻译：用于测量平面外加速度的传感器
公开(公告)号：US06792804B2
公开(公告)日：2004-09-21
申请号：US10082064
申请日：2001-10-19
申请人： Scott G. Adams , Scott A. Miller , Wendy Jo H. Johnson
发明人： Scott G. Adams , Scott A. Miller , Wendy Jo H. Johnson
IPC分类号： G01P15125
CPC分类号： G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/0828
摘要： An accelerometer. A silicon wafer is etched to form a fixed portion, a movable portion, and a resilient coupling between, the fixed and movable portions generally arranged in the plane of the wafer, the mass of the movable portion being concentrated on one side of the resilient coupling. One of the fixed and moveable portions of the silicon structure includes a first electrode. The other of the fixed and moveable portions includes a second electrode oriented parallel to the axis of acceleration, and an electrically-conductive layer electrically connected as a third electrode coplanar and mechanically coupled with the second electrode. The second and third electrodes are arranged in capacitive opposition to the first electrode, the capacitance between the first electrode and third electrode increasing as the movable portion moves in a direction along the axis of acceleration relative to the fixed portion and decreasing as the movable portion moves in an opposite direction. A resilient coupling retains the first and third electrodes in capacitive opposition to each other across a capacitance gap while allowing motion of the first electrode relative to the second and third electrodes in response to acceleration along an axis of acceleration perpendicular to the plane of the wafer, and resiliently restores the first electrode to an equilibrium position when the acceleration ceases. The second electrode is in opposition to a majority of the surface area of the first electrode when the electrodes are in the equilibrium position. Capacitance between the first and third electrodes is measured to obtain a measurement of acceleration along the axis.
摘要翻译：加速度计蚀刻硅晶片以形成通常布置在晶片平面中的固定部分和可移动部分之间的弹性联接，可移动部分的质量集中在弹性联轴器的一侧上。硅结构的固定和可移动部分之一包括第一电极。固定和可移动部分中的另一个包括平行于加速轴定向的第二电极，以及作为共面的第三电极电连接并与第二电极机械耦合的导电层。第二电极和第三电极与第一电极电容地相对配置，第一电极和第三电极之间的电容随着可移动部分沿着相对于固定部分的加速轴线的方向移动而增加，并且随着可移动部分移动在相反的方向。弹性联接器保持第一和第三电极跨过电容间隙彼此电容地相对，同时响应于沿垂直于晶片平面的加速轴的加速度，允许第一电极相对于第二和第三电极的运动，并且当加速停止时，将第一电极弹性恢复到平衡位置。当电极处于平衡位置时，第二电极与第一电极的大部分表面区域相对。测量第一和第三电极之间的电容以获得沿轴的加速度的测量。

20. 发明授权

US06626039B1 Electrically decoupled silicon gyroscope 有权
标题翻译：电分离硅陀螺仪
公开(公告)号：US06626039B1
公开(公告)日：2003-09-30
申请号：US09660740
申请日：2000-09-13
申请人： Scott G. Adams , James Groves , Donato Cardarelli , Raymond Carroll , Charles R. Dauwalter
发明人： Scott G. Adams , James Groves , Donato Cardarelli , Raymond Carroll , Charles R. Dauwalter
IPC分类号： G01C1902
CPC分类号： G01C19/5719
摘要： An oscillatory gyroscope is described with decoupled drive and sense oscillators and reduced cross-axis sensitivity. The gyroscope is fabricated using a plasma micromachining process on standard silicon wafers. The electrical isolation of the drive and sense functions of the gyroscope, contained within the same micromechanical element, reduce cross-coupling while obtaining high inertial mass and high sensitivity.
摘要翻译：描述了具有解耦驱动和感测振荡器的振荡陀螺仪，并降低了交叉轴灵敏度。使用在标准硅晶片上的等离子体微加工工艺制造陀螺仪。包含在同一微机电元件内的陀螺仪的驱动和感应功能的电隔离降低了交叉耦合，同时获得高惯性质量和高灵敏度。

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