专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08174086B2 Magnetoresistive element, and magnetic random access memory 有权
标题翻译：磁阻元件和磁性随机存取存储器
公开(公告)号：US08174086B2
公开(公告)日：2012-05-08
申请号：US12739990
申请日：2008-10-28
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1657 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： A magnetoresistive element is provided with a first magnetization free layer; a second magnetization free layer; a non-magnetic layer disposed adjacent to the second magnetization free layer; and a first magnetization fixed layer disposed adjacent to the second magnetization free layer on an opposite side of the second magnetization free layer. The first magnetization free layer is formed of ferromagnetic material and has a magnetic anisotropy in a thickness direction. On the other hand, the second magnetization free layer and the first magnetization fixed layer are formed of ferromagnetic material and have a magnetic anisotropy in an in-plane direction. The first magnetization free layer includes: a first magnetization fixed region having a fixed magnetization; a second magnetization fixed region having a fixed magnetization; and a magnetization free region connected to the first and second magnetization fixed regions and having a reversible magnetization. The magnetization free region and the second magnetization free layer are magnetically coupled. In addition, the center of mass of the magnetization free region and the center of mass of the second magnetization free layer are displaced in a particular in-plane direction.
摘要翻译：磁阻元件设置有第一磁化自由层; 第二磁化自由层; 邻近所述第二磁化自由层设置的非磁性层; 以及在所述第二磁化自由层的相对侧上邻近所述第二磁化自由层设置的第一磁化固定层。第一磁化自由层由铁磁材料形成，并且在厚度方向上具有磁各向异性。另一方面，第二磁化自由层和第一磁化固定层由铁磁材料形成，并且在面内方向上具有磁各向异性。第一磁化自由层包括：具有固定磁化强度的第一磁化固定区; 具有固定磁化强度的第二磁化固定区域; 以及与第一和第二磁化固定区域连接并具有可逆磁化强度的无磁化区域。磁化自由区和第二磁化自由层磁耦合。此外，无磁化区域的质心和第二磁化自由层的质心在特定的面内方向上移位。

12. 发明授权

US08159872B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08159872B2
公开(公告)日：2012-04-17
申请号：US12865197
申请日：2009-01-09
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/222 , Y10S977/933 , Y10S977/935
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization fixed layer, a first magnetization free layer, a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the first magnetization free layer, a second magnetization fixed layer, a second magnetization free layer and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the second magnetization free layer. The first magnetization fixed layer and the first magnetization free layer have perpendicular magnetic anisotropy, and the second magnetization fixed layer and the second magnetization free layer have in-plane magnetic anisotropy. The first magnetization free layer and the second magnetization free layer are magnetically coupled to each other. Center of the second magnetization free layer is displaced in a first direction from center of the first magnetization free layer in a plane parallel to each layer. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a third magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a third nonmagnetic layer sandwiched between the third magnetization fixed layer and the third magnetization free layer. The third magnetization fixed layer and the third magnetization free layer have in-plane magnetic anisotropy.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。第一磁阻元件具有第一磁化固定层，第一磁化自由层，夹在第一磁化固定层和第一磁化自由层之间的第一非磁性层，第二磁化固定层，第二磁化自由层和第二非磁性层层夹在第二磁化固定层和第二磁化自由层之间。第一磁化固定层和第一磁化自由层具有垂直的磁各向异性，第二磁化固定层和第二磁化自由层具有面内磁各向异性。第一磁化自由层和第二磁化自由层彼此磁耦合。第二磁化自由层的中心在与第一磁化自由层的平行于每个层的平面中的第一方向上位移。而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第三磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第三磁化固定层和第三磁化自由层之间的第三非磁性层。第三磁化固定层和第三磁化自由层具有面内磁各向异性。

13. 发明授权

US08149615B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08149615B2
公开(公告)日：2012-04-03
申请号：US12865194
申请日：2009-01-09
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/222
摘要： An MRAM has: a memory cell including a first magnetoresistance element; and a reference cell including a second magnetoresistance element. The first magnetoresistance element has a first magnetization free layer, a first magnetization fixed layer, a second magnetization free layer and a first nonmagnetic layer sandwiched between the first magnetization fixed layer and the second magnetization free layer. The first magnetization free layer has: first and second magnetization fixed regions; and a magnetization free region. The magnetization free region and the second magnetization free layer are magnetically coupled to each other. Whereas, the second magnetoresistance element has: a third magnetization free layer whose magnetization easy axis is parallel to a second direction; a second magnetization fixed layer whose magnetization direction is fixed in a third direction perpendicular to the second direction; and a second nonmagnetic layer sandwiched between the second magnetization fixed layer and the third magnetization free layer.
摘要翻译： MRAM具有：包括第一磁阻元件的存储单元; 以及包括第二磁阻元件的参考单元。第一磁阻元件具有第一磁化自由层，第一磁化固定层，第二磁化自由层和夹在第一磁化固定层和第二磁化自由层之间的第一非磁性层。第一磁化自由层具有：第一和第二磁化固定区域; 和无磁化区域。磁化自由区和第二磁化自由层彼此磁耦合。而第二磁阻元件具有：其易磁化轴平行于第二方向的第三磁化自由层; 第二磁化固定层，其磁化方向在与第二方向垂直的第三方向上固定; 以及夹在第二磁化固定层和第三磁化自由层之间的第二非磁性层。

14. 发明申请

US20110267879A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁记忆元件和磁性随机存取存储器
公开(公告)号：US20110267879A1
公开(公告)日：2011-11-03
申请号：US13139607
申请日：2009-12-24
申请人： Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
发明人： Kiyokazu Nagahara , Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic memory cell includes: a magnetization recording layer; and a magnetic tunneling junction section. The magnetization recording layer includes a ferromagnetic layer with perpendicular magnetic anisotropy. The magnetic tunneling junction section is used for reading information in the magnetization recording layer. The magnetization recording layer includes two domain wall moving areas.
摘要翻译：磁存储单元包括：磁化记录层; 和磁性隧道接合部分。磁化记录层包括具有垂直磁各向异性的铁磁层。磁性隧道结部分用于读取磁化记录层中的信息。磁化记录层包括两个畴壁移动区域。

15. 发明申请

US20110188298A1 MAGNETORESISTANCE ELEMENT, MRAM, AND INITIALIZATION METHOD FOR MAGNETORESISTANCE ELEMENT 有权
标题翻译：磁阻元件MRAM和磁化元件的初始化方法
公开(公告)号：US20110188298A1
公开(公告)日：2011-08-04
申请号：US13062764
申请日：2009-10-16
申请人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Shunsuke Fukami , Kiyokazu Nagahara , Norikazu Ohshima , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： A magnetoresistance element is provided with: a magnetization recording layer that is a ferromagnetic layer. The magnetization recording layer includes: a magnetization reversal region having a reversible magnetization; a first magnetization fixed region connected to a first boundary of the magnetization reversal region and having a magnetization direction fixed in a first direction; and a second magnetization fixed region connected to a second boundary of the magnetization reversal region and having a magnetization direction fixed in a second direction. At least one magnetization reversal facilitation structure which is a structure in which a magnetization is reversed more easily than the remaining portion is provided for a portion of the second magnetization fixed region.
摘要翻译：磁阻元件具有：作为铁磁层的磁化记录层。磁化记录层包括：具有可逆磁化强度的磁化反转区域; 第一磁化固定区域，其连接到所述磁化反转区域的第一边界并且具有沿第一方向固定的磁化方向; 以及连接到所述磁化反转区域的第二边界并且具有沿第二方向固定的磁化方向的第二磁化固定区域。对于第二磁化固定区域的一部分，提供了至少一个磁化反转促进结构，其是磁化反转比剩余部分更容易的结构。

16. 发明申请

US20110129691A1 DOMAIN WALL MOTION ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：域墙运动元件和磁性随机存取存储器
公开(公告)号：US20110129691A1
公开(公告)日：2011-06-02
申请号：US12864056
申请日：2009-01-13
申请人： Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara , Shunsuke Fukami
发明人： Nobuyuki Ishiwata , Tetsuhiro Suzuki , Norikazu Ohshima , Kiyokazu Nagahara , Shunsuke Fukami
IPC分类号： G11B5/66
CPC分类号： G11C19/0841 , B82Y25/00 , G11B5/64 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C27/00 , G11C2211/5615 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/11 , Y10T428/1136 , Y10T428/1143
摘要： A domain wall motion element has a magnetic recording layer 10 that is formed of a ferromagnetic film and has a domain wall DW. The magnetic recording layer 10 has: a pair of end regions 11-1 and 11-2 whose magnetization directions are fixed; and a center region 12 sandwiched between the pair of end regions 11-1 and 11-2, in which the domain wall. DW moves. A first trapping site TS1 by which the domain wall DW is trapped is formed at a boundary between the end region 11-1, 11-2 and the center region 12. Furthermore, at least one second trapping site TS2 by which the domain wall DW is trapped is formed within the center region 12.
摘要翻译：畴壁运动元件具有由铁磁膜形成并具有畴壁DW的磁记录层10。磁记录层10具有：其磁化方向固定的一对端区11-1和11-2; 以及夹在所述一对端部区域11-1和11-2之间的中心区域12，其中所述畴壁。 DW移动。在端区域11-1,11-2和中心区域12之间的边界处形成有第一陷阱位置TS1，其中畴壁DW被捕获。此外，至少一个第二陷阱位置TS2，其中域壁DW 被捕获在中心区域12内形成。

17. 发明授权

US09379312B2 Magnetoresistive effect element and magnetic random access memory using the same 有权
标题翻译：磁阻效应元件和磁性随机存取存储器使用相同
公开(公告)号：US09379312B2
公开(公告)日：2016-06-28
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/14 , H01F10/32 , H01L43/08 , H01L43/10 , G11C11/16 , G11C19/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

18. 发明授权

US08787076B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08787076B2
公开(公告)日：2014-07-22
申请号：US13061299
申请日：2009-08-13
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： G11C11/14 , G11C11/16 , G11C19/08 , H01L43/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L27/228 , H01L43/08
摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
摘要翻译：根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。数据存储层由具有垂直磁各向异性的铁磁材料制成。数据存储层的磁化状态由电流驱动畴壁运动改变。

19. 发明申请

US20130175645A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20130175645A1
公开(公告)日：2013-07-11
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

20. 发明申请

US20110297909A1 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁记忆元件和磁记忆
公开(公告)号：US20110297909A1
公开(公告)日：2011-12-08
申请号：US13145082
申请日：2010-01-28
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L27/22 , H01L43/02
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.
摘要翻译：磁存储元件包括：由具有垂直磁各向异性的铁磁材料形成的第一磁化自由层; 第二磁化自由层，设置在第一磁化自由层附近并由具有面内磁各向异性的铁磁材料形成; 由具有面内磁各向异性的铁磁材料形成的参考层; 以及设置在第二磁化自由层和参考层之间的非磁性层。第一磁化自由层包括：磁化固定的第一磁化固定区域，固定磁化的第二磁化固定区域和连接到第一磁化固定区域和第二磁化固定区域的无磁化区域，并且其中可以切换磁化。第二磁化自由层包含在平行于衬底的平面中的第一磁化自由层中。第二磁化自由层设置在远离平面中的无磁化区域的第一方向上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式