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1. 发明授权

US09379312B2 Magnetoresistive effect element and magnetic random access memory using the same 有权
标题翻译：磁阻效应元件和磁性随机存取存储器使用相同
公开(公告)号：US09379312B2
公开(公告)日：2016-06-28
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L29/82 , H01L43/02 , B82Y25/00 , G11C11/14 , H01F10/32 , H01L43/08 , H01L43/10 , G11C11/16 , G11C19/08 , H01L27/22
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

2. 发明申请

US20130175645A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY USING THE SAME 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20130175645A1
公开(公告)日：2013-07-11
申请号：US13518974
申请日：2010-12-14
申请人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
发明人： Tadahiko Sugibayashi , Eiji Kariyada , Kaoru Mori , Norikazu Ohshima , Shunsuke Fukami , Tetsuhiro Suzuki , Hironobu Tanigawa , Sadahiko Miura , Nobuyuki Ishiwata
IPC分类号： H01L43/02
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , G11C19/0841 , G11C2213/74 , G11C2213/79 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive effect element of the present invention includes: a domain wall motion layer, a spacer layer and a reference layer. The domain wall motion layer is made of ferromagnetic material with perpendicular magnetic anisotropy. The spacer layer is formed on the domain wall motion layer and made of non-magnetic material. The reference layer is formed on the spacer layer and made of ferromagnetic material, magnetization of the reference layer being fixed. The domain wall motion layer includes at least one domain wall, and stores data corresponding to a position of the domain wall. An anisotropy magnetic field of the domain wall motion layer is larger than a value in which the domain wall motion layer can hold the perpendicular magnetic anisotropy, and smaller than an essential value of an anisotropy magnetic field of the ferromagnetic material of the domain wall motion layer.
摘要翻译：本发明的磁阻效应元件包括：畴壁运动层，间隔层和参考层。畴壁运动层由具有垂直磁各向异性的铁磁材料制成。间隔层形成在畴壁运动层上，由非磁性材料制成。参考层形成在间隔层上，由铁磁材料制成，参考层的磁化被固定。畴壁运动层包括至少一个畴壁，并存储对应于畴壁位置的数据。畴壁运动层的各向异性磁场大于畴壁运动层能够保持垂直磁各向异性的值，并且小于畴壁运动层的铁磁材料的各向异性磁场的基本值。

3. 发明授权

US07929342B2 Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory 有权
标题翻译：磁存储单元，磁随机存取存储器以及用于磁随机存取存储器的数据读/写方法
公开(公告)号：US07929342B2
公开(公告)日：2011-04-19
申请号：US11996711
申请日：2006-08-04
申请人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
发明人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
摘要翻译：本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域方向。第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

4. 发明申请

US20100142264A1 MAGNETIC MEMORY CELL, MAGNETIC RANDOM ACCESS MEMORY, AND DATA READ/WRITE METHOD FOR MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性存储单元，磁性随机存取存储器以及用于磁性随机访问存储器的数据读/写方法
公开(公告)号：US20100142264A1
公开(公告)日：2010-06-10
申请号：US11996711
申请日：2006-08-04
申请人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
发明人： Hideaki Numata , Norikazu Ohshima , Tetsuhiro Suzuki , Tadahiko Sugibayashi , Nobuyuki Ishiwata , Shunsuke Fukami
IPC分类号： G11C11/14 , H01L29/82 , G11C7/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228
摘要： The present invention provides a new data writing method for an MRAM which can suppress deterioration of a tunnel barrier layer.A magnetic memory cell 1 has a magnetic recording layer 10 and a pinned layer 30 connected to the magnetic recording layer 10 through a non-magnetic layer 20. The magnetic recording layer 10 includes a magnetization switching region 13, a first magnetization fixed region 11 and a second magnetization fixed region 12. The magnetization switching region 13 has reversible magnetization and faces the pinned layer 30. The first magnetization fixed region 11 is connected to a first boundary B1 of the magnetization switching region 13 and its magnetization direction is fixed to a first direction. The second magnetization fixed region 12 is connected to a second boundary B2 of the magnetization switching region 13 and its magnetization direction is fixed to a second direction. Both of the first direction and the second direction are toward the magnetization switching region 13 or away from the magnetization switching region 13.
摘要翻译：本发明提供了一种能够抑制隧道势垒层劣化的MRAM的新数据写入方法。磁存储单元1具有通过非磁性层20连接到磁记录层10的磁记录层10和钉扎层30.磁记录层10包括磁化切换区13，第一磁化固定区11和第二磁化固定区域12.磁化切换区域13具有可逆磁化并面向被钉扎层30.第一磁化固定区域11连接到磁化转换区域13的第一边界B1，并且其磁化方向被固定到第一磁化固定区域方向。第二磁化固定区域12与磁化切换区域13的第二边界B2连接，其磁化方向固定在第二方向。第一方向和第二方向都朝向磁化开关区域13或远离磁化开关区域13。

5. 发明授权

US08830735B2 Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film 有权
标题翻译：磁存储器，包括具有垂直磁各向异性膜的数据记录层的存储单元
公开(公告)号：US08830735B2
公开(公告)日：2014-09-09
申请号：US13304083
申请日：2011-11-23
申请人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： G11B5/66 , G11C11/16 , G01R33/09 , G11C11/02 , G11C11/14 , G11C11/15
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
摘要翻译：磁存储器包括：具有垂直磁各向异性的磁化固定层，磁化固定层的磁化方向固定; 层间电介质; 形成在磁化固定层和层间电介质的上表面上的底层; 以及形成在下层的上表面上并具有垂直磁各向异性的数据记录层。底层包括：第一磁性底层; 以及形成在第一磁性底层上的非磁性底层。形成第一磁性底层，使得第一磁性底层在形成于层间电介质上的第一磁性底层的一部分中不具有面内的磁各向异性。

6. 发明申请

US20120135275A1 MAGNETIC MEMORY INCLUDING MEMORY CELLS INCORPORATING DATA RECORDING LAYER WITH PERPENDICULAR MAGNETIC ANISOTROPY FILM 有权
标题翻译：磁记录，包括记录数据记录层，带有全息磁性膜片
公开(公告)号：US20120135275A1
公开(公告)日：2012-05-31
申请号：US13304083
申请日：2011-11-23
申请人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
发明人： Eiji Kariyada , Katsumi Suemitsu , Hironobu Tanigawa , Kaoru Mori , Tetsuhiro Suzuki , Kiyokazu Nagahara , Yasuaki Ozaki , Norikazu Ohshima
IPC分类号： G11B5/66
CPC分类号： H01L43/10 , G01R33/091 , G01R33/098 , G11C11/02 , G11C11/14 , G11C11/15 , G11C11/161 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
摘要翻译：磁存储器包括：具有垂直磁各向异性的磁化固定层，磁化固定层的磁化方向固定; 层间电介质; 形成在磁化固定层和层间电介质的上表面上的底层; 以及形成在下层的上表面上并具有垂直磁各向异性的数据记录层。底层包括：第一磁性底层; 以及形成在第一磁性底层上的非磁性底层。形成第一磁性底层，使得第一磁性底层在形成于层间电介质上的第一磁性底层的一部分中不具有面内的磁各向异性。

7. 发明授权

US08791534B2 Magnetic memory device and magnetic memory 有权
标题翻译：磁存储器和磁存储器
公开(公告)号：US08791534B2
公开(公告)日：2014-07-29
申请号：US13806828
申请日：2011-06-16
申请人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
发明人： Shunsuke Fukami , Tetsuhiro Suzuki , Kiyokazu Nagahara , Nobuyuki Ishiwata , Norikazu Ohshima
IPC分类号： H01L43/00
CPC分类号： H01L43/02 , G11C11/14 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1675 , G11C19/0808 , H01L27/228 , H01L43/08
摘要： In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.
摘要翻译：在其中磁化自由层的两端的磁化被磁化固定层固定的垂直磁化畴壁运动MRAM中，防止了由于来自磁化固定层的泄漏磁场引起的写入电流的增加。在第一边界线和第一垂直线之间存在第一位移，其中穿过第一磁化固定层的外周线的第一磁化自由层的曲线部分是第一边界线，链段无磁化区域的中心和第一磁化固定区域的中心是第一段，作为第一段的垂直线并与第一边界线接触的段是第一垂直线。

8. 发明授权

US08040724B2 Magnetic domain wall random access memory 有权
标题翻译：磁畴壁随机存取存储器
公开(公告)号：US08040724B2
公开(公告)日：2011-10-18
申请号：US12671012
申请日：2008-07-07
申请人： Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.
摘要翻译：磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。

9. 发明申请

US20100193890A1 MAGNETIC DOMAIN WALL RANDOM ACCESS MEMORY 有权
标题翻译：磁性域墙随机存取存储器
公开(公告)号：US20100193890A1
公开(公告)日：2010-08-05
申请号：US12671012
申请日：2008-07-07
申请人： Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
发明人： Tetsuhiro Suzuki , Norikazu Ohshima , Shunsuke Fukami , Kiyokazu Nagahara , Nobuyuki Ishiwata
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228
摘要： A magnetic random access memory includes: a magnetic recording layer including a ferromagnetic layer and having perpendicular magnetic anisotropy; and a magnetic reading layer provided on the magnetic recording layer and used for reading information. The magnetic recording layer includes: a magnetization switching area having reversible magnetization; a first magnetization pinned area connected to a first boundary of the magnetization switching area and having magnetization whose direction is pinned in a first direction; and a second magnetization pinned area connected to a second boundary of the magnetization switching area and having magnetization whose direction is pinned in a second direction. The magnetic reading layer includes: a magnetic sensing layer whose direction of magnetization changes based on a direction of the magnetization of the magnetization switching area; a nonmagnetic barrier layer provided on the magnetic sensing layer; and a pinned layer provided on the nonmagnetic barrier layer.
摘要翻译：磁性随机存取存储器包括：包含铁磁层并具有垂直磁各向异性的磁记录层; 以及设置在磁记录层上并用于读取信息的磁读取层。磁记录层包括：具有可逆磁化的磁化切换区域; 第一磁化固定区域，连接到磁化开关区域的第一边界并且具有方向被固定在第一方向上的磁化; 以及连接到所述磁化开关区域的第二边界并具有其方向被固定在第二方向上的磁化的第二磁化固定区域。磁读取层包括：磁化方向的磁感应层根据磁化转换区域的磁化方向而变化; 设置在所述磁敏感层上的非磁性阻挡层; 以及设置在非磁性阻挡层上的钉扎层。

10. 发明授权

US08787076B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08787076B2
公开(公告)日：2014-07-22
申请号：US13061299
申请日：2009-08-13
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tetsuhiro Suzuki , Kiyokazu Nagahara , Norikazu Ohshima
IPC分类号： G11C11/14 , G11C11/16 , G11C19/08 , H01L43/08
CPC分类号： G11C19/0808 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0841 , H01L27/228 , H01L43/08
摘要： A magnetic memory according to the present invention has: a first underlayer; a second underlayer so formed on the first underlayer as to be in contact with the first underlayer; and a data storage layer so formed on the second underlayer as to be in contact with the second underlayer. The data storage layer is made of a ferromagnetic material having perpendicular magnetic anisotropy. A magnetization state of the data storage layer is changed by current driven domain wall motion.
摘要翻译：根据本发明的磁存储器具有：第一底层; 第二底层如此形成在第一底层上以与第一底层接触; 以及形成在第二底层上以与第二底层接触的数据存储层。数据存储层由具有垂直磁各向异性的铁磁材料制成。数据存储层的磁化状态由电流驱动畴壁运动改变。

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