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11. 发明申请

US20090246375A1 METHOD FOR FORMING TANTALUM NITRIDE FILM 有权
标题翻译：形成氮化钛薄膜的方法
公开(公告)号：US20090246375A1
公开(公告)日：2009-10-01
申请号：US11885399
申请日：2006-03-03
申请人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo
发明人： Narishi Gonohe , Satoru Toyoda , Harunori Ushikawa , Tomoyasu Kondo
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45525 , C23C16/45534 , C23C16/45536 , C23C16/4554 , C23C16/45553 , H01L21/28562
摘要： A tantalum nitride film-forming method comprises the steps of introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R,R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms), and a halogen gas into a vacuum chamber; and reacting these components with one another on a substrate to thus form a surface adsorption film comprising a mono-atomic or multi (several)-atomic layer and composed of a compound represented by the following general formula: TaNx(Hal)y(R, R′)z (in the formula, Hal represents a halogen atom), then introducing radicals generated from an H atom-containing compound to thus remove Ta—N bonds present in the resulting compound through breakage thereof and remove, at the same time, the remaining R(R′) groups bonded to the N atoms present in the compound through the cleavage thereof and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to thus further enrich the film with tantalum.
摘要翻译：氮化钽膜形成方法包括以下步骤：引入由具有由以下通式表示的配位配体的元素钽（Ta）构成的配位化合物构成的原料气体：N-（R，R'）（式 R和R'可以相同或不同，各自表示碳原子数1〜6的烷基），卤素气体进入真空室; 并将这些组分彼此反应在基底上，从而形成包含单原子或多（多个）原子层的表面吸附膜，并由以下通式表示的化合物组成：TaNx（Hal）y（R， R'）z（式中，Hal表示卤素原子），然后引入由含H原子的化合物产生的自由基，从而通过其残留除去所得化合物中存在的Ta-N键，同时除去剩余的R（R'）基团通过其切割而与化合物中存在的N原子键合，从而形成富含钽原子的氮化钽膜。所得到的氮化钽膜具有低电阻，C原子和N原子含量低，组成比高：Ta / N可以确保足够高的附着线分布线形成膜，因此可用作阻挡膜。此外，根据溅射技术将钽颗粒注入到所得的膜中，从而进一步用钽富集膜。

12. 发明授权

US08809193B2 Method for the formation of Co film and method for the formation of Cu interconnection film 有权
标题翻译：形成Co膜的方法和形成Cu互连膜的方法
公开(公告)号：US08809193B2
公开(公告)日：2014-08-19
申请号：US13393790
申请日：2010-09-02
申请人： Shoichiro Kumamoto , Satoru Toyoda , Harunori Ushikawa
发明人： Shoichiro Kumamoto , Satoru Toyoda , Harunori Ushikawa
IPC分类号： H01L21/44
CPC分类号： H01L23/53238 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H2 gas with at least one member selected from the group consisting of NH3, N2H4, NH(CH3)2, N2H3CH, and N2 as a reducing gas, or at least one gas selected from the group consisting of NH3, N2H4, NH(CH3)2, N2H3CH, and N2 as a reducing gas, on the surface of a base material, which consists of an SiO2 film or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.
摘要翻译：通过提供烷基酰胺钴化合物和含有H 2气体的组合气体与选自NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2中的至少一种作为还原气体形成Co膜，或至少在由SiO 2膜或作为主层的阻挡膜构成的基材的表面上，选自由NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2组成的组中的一种气体作为还原气体。在Co膜的表面上形成Cu互连膜。

13. 发明申请

US20130023116A1 METHOD FOR THE FORMATION OF CO FILM AND METHOD FOR THE FORMATION OF CU INTERCONNECTION FILM 有权
标题翻译：形成CO膜的方法和形成CU互连膜的方法
公开(公告)号：US20130023116A1
公开(公告)日：2013-01-24
申请号：US13393790
申请日：2010-09-02
申请人： Shoichiro Kumamoto , Satoru Toyoda , Harunori Ushikawa
发明人： Shoichiro Kumamoto , Satoru Toyoda , Harunori Ushikawa
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , C23C16/18 , H01L21/28556 , H01L21/28562 , H01L21/32051 , H01L21/76846 , H01L21/76849 , H01L21/76883 , H01L2924/0002 , H01L2924/00
摘要： A Co film is formed by supplying cobalt alkylamidinate, and a combined gas containing H2 gas with at least one member selected from the group consisting of NH3, N2H4, NH (CH3)2, N2H3CH, and N2 as a reducing gas, or at least one gas selected from the group consisting of NH3, N2H4, NH (CH3)2, N2H3CH, and N2 as a reducing gas, on the surface of a base material, which consists of an SiO2 film or a barrier film serving as a primary layer. A Cu interconnection film is formed on the surface of the Co film.
摘要翻译：通过提供烷基酰胺钴化合物和含有H 2气体的组合气体与选自NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2中的至少一种作为还原气体形成Co膜，或至少在由SiO 2膜或作为主层的阻挡膜构成的基材的表面上，选自由NH 3，N 2 H 4，NH（CH 3）2，N 2 H 3 CH和N 2组成的组中的一种气体作为还原气体。在Co膜的表面上形成Cu互连膜。

14. 发明申请

US20090078580A1 Method for Forming Cu Film 审中-公开
标题翻译：形成Cu膜的方法
公开(公告)号：US20090078580A1
公开(公告)日：2009-03-26
申请号：US12085593
申请日：2006-12-04
申请人： Tomoyuki Yoshihama , Masamichi Harada , Satoru Toyoda , Harunori Ushikawa
发明人： Tomoyuki Yoshihama , Masamichi Harada , Satoru Toyoda , Harunori Ushikawa
IPC分类号： C25D5/50 , C23C14/34
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76856 , H01L21/76864 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： As a barrier metal film, a Ti film or a Ta film is formed by sputtering method on a substrate. On top of this barrier metal film there is formed a nitride film by sputtering method. A Cu film is then formed on the nitride film by CVD method and thereafter anneal processing is performed at 100 to 400° C. In this manner, by forming the Cu film, the adhesiveness between the barrier metal film and the Cu film improves.
摘要翻译：作为阻挡金属膜，通过溅射法在基板上形成Ti膜或Ta膜。在该阻挡金属膜的顶部，通过溅射法形成氮化物膜。然后通过CVD法在氮化物膜上形成Cu膜，然后在100-400℃下进行退火处理。由此，通过形成Cu膜，阻挡金属膜与Cu膜之间的粘合性提高。

15. 发明申请

US20120121818A1 COATING SURFACE PROCESSING METHOD AND COATING SURFACE PROCESSING APPARATUS 审中-公开
标题翻译：涂料表面处理方法和涂料表面处理装置
公开(公告)号：US20120121818A1
公开(公告)日：2012-05-17
申请号：US13386264
申请日：2010-07-21
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： B05D3/06 , B05C11/00 , C23C14/34
CPC分类号： H01L21/76877 , H01L21/321 , H01L21/32131 , H01L21/76883
摘要： A coating surface processing method includes forming a coating on the entire surface of a base body that has fine holes or fine grooves formed on the to-be-filmed surface, including the inner wall surfaces and the inner bottom surfaces of the holes or the grooves, and flattening the coating formed on the inner wall surfaces of the holes or the grooves by carrying out a plasma processing on the surface of the coating.
摘要翻译：涂布表面处理方法包括在具有形成在被成膜表面上的细孔或细槽的基体的整个表面上形成涂层，包括孔或槽的内壁表面和内底表面并且通过在涂层的表面上进行等离子体处理来使形成在孔或槽的内壁表面上的涂层变平。

16. 发明申请

US20090120787A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090120787A1
公开(公告)日：2009-05-14
申请号：US12352011
申请日：2009-01-12
申请人： Yoshihiro OKAMURA , Satoru Toyoda , Michio Ishikawa
发明人： Yoshihiro OKAMURA , Satoru Toyoda , Michio Ishikawa
IPC分类号： C23C14/34
CPC分类号： H01L23/53238 , C23C14/046 , C23C14/185 , H01L21/2855 , H01L21/76831 , H01L21/76844 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L21/76877 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A barrier film of a semiconductor device is formed. The present invention forms a middle layer having copper as a main component and including a predetermined quantity of diffusible metal with the addition of a reaction gas, by sputtering an alloy target having copper as a main component with the addition of a diffusible metal, while supplying a reaction gas including oxygen or nitrogen. Since contents of the diffusible metal are accurately controlled when heating the middle layer, the barrier film is certainly formed. Additionally, the reaction gas is added to the middle layer so that the reactivity of the diffusible metal becomes high; and accordingly, it is possible to form the barrier film at a heating temperature lower than the conventional art.
摘要翻译：形成半导体器件的阻挡膜。本发明通过溅射具有铜作为主要成分的合金靶，通过添加可扩散金属，形成以铜为主要成分并包含预定量的可扩散金属并添加反应气体的中间层，同时供给包括氧或氮的反应气体。由于在加热中间层时能够精确地控制可扩散金属的含量，因此肯定形成阻挡膜。另外，将反应气体添加到中间层，使得可扩散金属的反应性变高; 因此，可以在比传统技术更低的加热温度下形成阻挡膜。

17. 发明授权

US4816046A Fine particle collector trap for vacuum evacuating system 失效
标题翻译：用于真空抽气系统的精细颗粒捕集阱
公开(公告)号：US4816046A
公开(公告)日：1989-03-28
申请号：US182490
申请日：1988-04-18
申请人： Yoshiyasu Maeba , Satoru Toyoda , Humio Naruse
发明人： Yoshiyasu Maeba , Satoru Toyoda , Humio Naruse
IPC分类号： B01D49/02 , B01D47/00 , C23C14/56 , C23C16/44 , F04B37/16 , B01D53/22
CPC分类号： C23C16/4412 , B01D47/00 , C23C14/564
摘要： A particle collector trap for a vacuum evacuating system wherein there is provided a vessel formed of a double-wall cylinder and having an inlet conduit connected to a vacuum processing chamber and an outlet conduit connected to at least one vacuum pump, a passage for flowing gas is defined between the double walls of the vessel, and one of the double walls is heated and other wall is cooled so as to maintain a predetermined temperature difference therebetween.

18. 发明申请

US20120111722A1 FILM-FORMING APPARATUS 审中-公开
标题翻译：电影制作装置
公开(公告)号：US20120111722A1
公开(公告)日：2012-05-10
申请号：US13383670
申请日：2010-07-15
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/3408 , H01J37/3447 , H01L21/2855
摘要： There is provided a film forming apparatus for forming a coating film on a surface of an object to be processed by using a sputtering method, the film forming apparatus including: a chamber for accommodating the object and a target serving as a base material for the coating film that are placed so as to face each other; an exhaust unit for reducing the pressure inside the chamber; a magnetic field generating unit for generating a magnetic field in front of the sputtering surface of the target; a direct current power supply for applying a negative direct current voltage to the target; a gas introducing unit for introducing a sputtering gas into the chamber; and a unit for preventing the entering of sputtered particles onto the object until the plasma generated between the target and the object reaches a stable state.
摘要翻译：提供了一种通过使用溅射法在待处理物体的表面上形成涂膜的成膜设备，该成膜设备包括：容纳物体的室和用作涂层的基材的靶被放置成面对的电影; 排气单元，用于减小室内的压力; 用于在所述靶的溅射表面前方产生磁场的磁场产生单元; 用于向目标施加负的直流电压的直流电源; 气体导入单元，用于将溅射气体引入到所述室中; 以及用于防止溅射的颗粒进入物体的单元，直到在目标和物体之间产生的等离子体达到稳定状态。

19. 发明申请

US20120103801A1 FILM FORMATION APPARATUS 有权
标题翻译：胶片形成装置
公开(公告)号：US20120103801A1
公开(公告)日：2012-05-03
申请号：US13382543
申请日：2010-07-15
申请人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
发明人： Shuji Kodaira , Tomoyuki Yoshihama , Koukichi Kamada , Kazumasa Horita , Junichi Hamaguchi , Shigeo Nakanishi , Satoru Toyoda
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , C23C14/351 , H01L21/2855
摘要： A film formation apparatus includes: a chamber having an inner space in which both a body to be processed and a target are disposed so that the body to be processed and the target are opposed to each other, a first magnetic field generation section generating a magnetic field in the inner space to which the target is exposed; a second magnetic field generation section generating a perpendicular magnetic field so as to allow perpendicular magnetic lines of force thereof to pass between the target the body to be processed; and a third magnetic field generation section disposed at upstream side of the target as seen from the second magnetic field generation section.
摘要翻译：一种成膜装置包括：具有内部空间的室，其中被处理体和目标物都被设置成使得被处理体和目标物彼此相对;第一磁场产生部，其产生磁性目标曝光的内部空间中的场; 产生垂直磁场的第二磁场产生部分，以允许其垂直磁力线在被处理体之间通过; 以及第三磁场产生部，设置在所述目标的上游侧，从所述第二磁场产生部观察。

20. 发明授权

US06280585B1 Sputtering apparatus for filling pores of a circular substrate 失效
标题翻译：用于填充圆形基板的孔的溅射装置
公开(公告)号：US06280585B1
公开(公告)日：2001-08-28
申请号：US08963197
申请日：1997-11-03
申请人： Hisaharu Obinata , Tetsuji Kiyota , Satoru Toyoda , Yoshiyuki Kadokura
发明人： Hisaharu Obinata , Tetsuji Kiyota , Satoru Toyoda , Yoshiyuki Kadokura
IPC分类号： C23C1434
CPC分类号： C23C14/345 , C23C14/046 , C23C14/35 , H01J37/3402 , H01J2237/3327
摘要： A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1×10−1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.
摘要翻译：将靶和衬底之间的距离设定为至少大于圆形衬底晶片的直径并将真空室的内部气体压力水平保持为不高于1×10 -1 Pa的溅射装置，从而能够有效地填充设置在基板上的孔而不产生灰尘和空隙。

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