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2. 发明授权

US5770025A Magnetron sputtering apparatus 失效
标题翻译：磁控溅射装置
公开(公告)号：US5770025A
公开(公告)日：1998-06-23
申请号：US690789
申请日：1996-08-01
申请人： Tetsuji Kiyota
发明人： Tetsuji Kiyota
IPC分类号： C23C14/04 , C23C14/35 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3455 , C23C14/046 , C23C14/35 , H01J37/3408
摘要： A magnetron sputtering apparatus with an improved magnetic field distribution on the surface of a target, so that a film is formed satisfactorily in each and every recess in a substrate arranged in the apparatus, wherein the magnet is so arranged as to produce a magnetic field distribution on the surface of the target having a horizontal magnetic field intensity equal to 0 only at points located within the outer periphery of the target and to ignite electric discharge at a pressure level as low as 10.sup.-2 Pa. The magnet is also so configured as to produce a magnetic field distribution having a horizontal magnetic field intensity of not lower than 140 Gauss at a position on the surface of the target where the vertical magnetic field intensity is equal to 0 and a vertical magnetic field intensity of not lower than 60 Gauss at a position on the surface of the target where the horizontal magnetic field intensity is equal to 0.
摘要翻译：一种在靶表面上具有改善的磁场分布的磁控溅射装置，使得在布置在装置中的基板的每个凹部中令人满意地形成膜，其中磁体被布置成产生磁场分布在目标的表面上，仅在位于靶外周的点处具有等于0的水平磁场强度，并且以低至10-2Pa的压力水平点燃放电，磁体也被配置为以在垂直磁场强度等于0的目标表面上的位置处产生具有不低于140高斯的水平磁场强度的磁场分布，并且垂直磁场强度不低于60高斯在水平磁场强度等于0的目标表面上的位置。

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