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11. 发明申请

US20120151119A1 VIRTUAL MEMORY MANAGEMENT APPARATUS 有权
标题翻译：虚拟内存管理装置
公开(公告)号：US20120151119A1
公开(公告)日：2012-06-14
申请号：US13371541
申请日：2012-02-13
申请人： Hideki Yoshida , Tatsunori Kanai , Masaya Tarui , Yutaka Yamada
发明人： Hideki Yoshida , Tatsunori Kanai , Masaya Tarui , Yutaka Yamada
IPC分类号： G06F12/00
CPC分类号： G06F3/061 , G06F3/0652 , G06F3/0656 , G06F3/0688 , G06F12/0246 , G06F12/0638 , G06F12/08 , G06F12/0808 , G06F12/0811 , G06F12/0868 , G06F12/1009 , G06F12/12 , G06F12/123 , G06F2212/283 , G06F2212/651 , G06F2212/7201 , G06F2212/7208 , G11C7/1072
摘要： A virtual memory management apparatus of an embodiment is embedded in a computing machine 80 and is provided with an application program 21, an operating system 22, a volatile memory 11, and a nonvolatile memory 12. The volatile memory 11 is provided with a plurality of clean pages. The nonvolatile memory 12 is provided with a plurality of dirty pages and a page table memory unit 51. The operating system 22 is provided with a virtual memory management unit 23 which includes a page transfer unit 25.
摘要翻译：实施例的虚拟存储器管理装置嵌入在计算机80中，并具有应用程序21，操作系统22，易失性存储器11和非易失性存储器12.易失性存储器11设置有多个干净的页面。非易失性存储器12设置有多个脏页和页表存储单元51.操作系统22设置有包括页传送单元25的虚拟存储器管理单元23。

12. 发明申请

US20110136079A1 ABUTMENT FOR DENTAL MAGNETIC ATTACHMENT 审中-公开
标题翻译：牙科牙科治疗的实施
公开(公告)号：US20110136079A1
公开(公告)日：2011-06-09
申请号：US12952931
申请日：2010-11-23
申请人： Joji OKAZAKI , Teruta Maeda , Koh-ichi Kuremoto , Takanori Eto , Masahiro Inoue , Yutaka Yamada , Masashi Takahashi
发明人： Joji OKAZAKI , Teruta Maeda , Koh-ichi Kuremoto , Takanori Eto , Masahiro Inoue , Yutaka Yamada , Masashi Takahashi
IPC分类号： A61C8/00
CPC分类号： A61C8/0081
摘要： To attract a magnet in a denture to a keeper fixed at an embedded implant fixture with a complete closed magnetic circuit and without care to metal allergy, an abutment 1 for a dental magnetic attachment is made of a titanium or alloy, and has a male screw part 1a at a center part of a bottom surface to be screwed into a female screw part 3a of an implant fixture 3, a keeper attaching hole 1b at an upper surface in which a keeper 2 having a uniform thickness and the same size/area as an attracting surface of a magnet is inserted and bonded/fixed; and an engagement part 1c for a rotary tool at a center in the keeper attaching hole 1b and/or at an outer frame part around the keeper attaching hole for screwing the abutment 1 in the implant fixture 3.
摘要翻译：为了将义齿中的磁体吸引到固定在嵌入式植入物固定装置上的保持器，其具有完全闭合的磁路并且不需要金属过敏，用于牙科磁性附件的支座1由钛或合金制成，并且具有外螺纹将要拧入植入物固定件3的阴螺纹部分3a的底面的中心部分的部分1a，在上表面处的保持器附接孔1b，其中具有均匀厚度和相同尺寸/面积的保持器2 磁体的吸引表面插入并粘结/固定; 以及用于在保持器安装孔1b中的旋转工具的接合部分1c和/或围绕保持器附接孔的外框架部分，用于将植入物夹具3中的邻接部1旋拧。

13. 发明授权

US07757263B2 Front-end device of set-top box for two-way communication 失效
标题翻译：机顶盒前端设备进行双向通信
公开(公告)号：US07757263B2
公开(公告)日：2010-07-13
申请号：US11374743
申请日：2006-03-14
申请人： Akihiro Tatsuta , Yutaka Yamada , Tomonori Shiomi
发明人： Akihiro Tatsuta , Yutaka Yamada , Tomonori Shiomi
IPC分类号： H04N7/16
CPC分类号： H04N21/6168 , H04N7/102 , H04N21/42607 , H04N21/42676 , H04N21/6118
摘要： The device includes a cable interface module having a diplexer that outputs a first signal input from a first connector part connected to a cable television network to a third connector part and outputs a second signal input from a second connector part to a first connector part; a video tuner module having a distributor that branches a first signal input from a fourth connector part having a shape capable of connecting to the cable television network and connected to a third connector part and outputs to a fifth connector part, and inputs the other branched signal into a video tuner; and a communication tuner that selects another channel of the signal output from a fifth connector part.
摘要翻译：所述装置包括具有双工器的电缆接口模块，所述双工器将从连接到有线电视网络的第一连接器部分输入的第一信号输出到第三连接器部分，并将从第二连接器部分输入的第二信号输出到第一连接器部分; 一个视频调谐器模块，具有一个分配器，该分配器将从具有连接到有线电视网络的形状的第四连接器部分输入的第一信号分支并连接到第三连接器部分并输出到第五连接器部分，并输入另一分支信号进入视频调谐器; 以及通信调谐器，其选择从第五连接器部分输出的信号的另一信道。

14. 发明授权

US07655569B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07655569B2
公开(公告)日：2010-02-02
申请号：US12020761
申请日：2008-01-28
申请人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
发明人： Yuichi Inaba , Yutaka Yamada , Shigehiro Morikawa
IPC分类号： H01L21/311
CPC分类号： H01L27/115 , H01L29/42324 , H01L29/66825 , H01L29/7881
摘要： The invention prevents a wiring layer in a memory region from being exposed to prevent a change in wire resistance and degradation of reliability. A SiO2 film as an etching stopper film which transmits ultraviolet light is formed on pad electrodes and an interlayer insulation film. Then, the SiO2 film on the pad electrodes is etched selectively and the SiO2 film in an EPROM region is left. A silicon nitride film and a polyimide film are then formed on the SiO2 film and on the pad electrodes where the SiO2 film is removed, as a protection film which does not transmit ultraviolet light. The silicon nitride film and the polyimide film on the pad electrodes and in the EPROM region are then selectively removed by etching. Since the SiO2 film functions as an etching stopper at this time, the interlayer insulation film under the SiO2 film is prevented from being etched and a control gate line metal layer is prevented from being exposed.
摘要翻译：本发明防止存储区域中的布线层暴露，以防止电线电阻的变化和可靠性的劣化。在焊盘电极和层间绝缘膜上形成作为透射紫外光的蚀刻停止膜的SiO 2膜。然后，选择性地蚀刻焊盘电极上的SiO 2膜，并且留下EPROM区域中的SiO 2膜。然后在SiO 2膜上除去SiO 2膜的焊盘电极上形成氮化硅膜和聚酰亚胺膜作为不透射紫外线的保护膜。然后通过蚀刻选择性地去除焊盘电极和EPROM区域中的氮化硅膜和聚酰亚胺膜。由于SiO 2膜此时用作蚀刻阻挡层，因此可以防止SiO 2膜下的层间绝缘膜被蚀刻，防止控制栅线金属层露出。

15. 发明申请

US20090189686A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND POWER CONTROL METHOD 有权
标题翻译：半导体集成电路和功率控制方法
公开(公告)号：US20090189686A1
公开(公告)日：2009-07-30
申请号：US12361964
申请日：2009-01-29
申请人： Yutaka Yamada , Tatsunori Kanai
发明人： Yutaka Yamada , Tatsunori Kanai
IPC分类号： G05F1/00
CPC分类号： G06F1/3203 , G06F1/3287 , Y02D10/171
摘要： Each of computing units on a semiconductor integrated circuit includes a first signal output unit that outputs a first status signal indicating a state of a input/output control unit with regard to an access to a storage unit, a second signal output unit that outputs a second status signal indicating a state of a process control unit with regard to an access to a processing unit, and a power control unit that control ON and OFF of power of the storage unit and the processing unit based on states of the first status signal and the second status signal.
摘要翻译：半导体集成电路中的每个计算单元包括：第一信号输出单元，其输出指示关于对存储单元的访问的输入/输出控制单元的状态的第一状态信号;第二信号输出单元，其输出第二信号指示处理单元的访问状态的状态信号;以及功率控制单元，其基于第一状态信号和第一状态信号的状态来控制存储单元和处理单元的电源的接通和断开第二状态信号。

16. 发明申请

US20090146273A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090146273A1
公开(公告)日：2009-06-11
申请号：US11997700
申请日：2006-07-28
申请人： Yutaka Yamada , Takeshi Kishida , Yoshikazu Tamura , Yasuo Sogawa , Masanori Hirofuji
发明人： Yutaka Yamada , Takeshi Kishida , Yoshikazu Tamura , Yasuo Sogawa , Masanori Hirofuji
IPC分类号： H01L23/495
CPC分类号： H01L24/06 , H01L23/50 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/06153 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48599 , H01L2224/49113 , H01L2224/4917 , H01L2224/49171 , H01L2224/49431 , H01L2224/85399 , H01L2924/00014 , H01L2924/01033 , H01L2924/01058 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/3011 , H01L2224/78 , H01L2924/00
摘要： There is provided a semiconductor device adopting, as a layout of pads connected to an external package on an LSI, a zigzag pad layout in which the pads are arranged shifted alternately, which can avoid occurrences of short-circuiting of wires, an increase in chip size due to avoidance of short-circuiting, propagation of power supply or GND noise due to reduction in IO cell interval, and signal transmission delay difference due to displacement of pad positions.In a semiconductor device wherein plural pads on a semiconductor element which are connected to function terminals on an external package are arranged in two lines along the periphery of the semiconductor element, an arrangement order of the plural pads on the semiconductor element is made different from an arrangement order of the function terminals on the external package.
摘要翻译：提供了一种半导体器件，其采用连接到LSI上的外部封装的焊盘的布局，其中焊盘布置移位的之字形焊盘布局，这可以避免导线短路的发生，芯片的增加由于避免短路，由于IO单元间隔的减少而导致的电源传播或GND噪声，以及由于焊盘位置的位移引起的信号传输延迟差异。在半导体装置中，与外部封装上的功能端子连接的半导体元件上的多个焊盘沿着半导体元件的周边配置成两列，半导体元件上的多个焊盘的排列顺序与功能端子在外部封装上的布置顺序。

17. 发明授权

US07436140B2 Image display device and stand for image display device 有权
标题翻译：图像显示装置和图像显示装置
公开(公告)号：US07436140B2
公开(公告)日：2008-10-14
申请号：US11455639
申请日：2006-06-20
申请人： Masanori Takaji , Tatsuya Nakazawa , Yutaka Yamada , Toshihiko Matsuzawa , Satoshi Ishizuka
发明人： Masanori Takaji , Tatsuya Nakazawa , Yutaka Yamada , Toshihiko Matsuzawa , Satoshi Ishizuka
IPC分类号： H02P1/04 , G05B23/02
CPC分类号： F16M11/22 , F16M11/08 , F16M11/18 , F16M2200/08
摘要： A self-supporting stand for a thin display device is to be controlled so that the display device faces in a preset screen direction in a one-touch manner. A function of constantly recognizing the screen direction of the display device and detecting its own direction by detecting a resistance value of a resistance volume such as a variable resistor installed in an electric screen direction changing mechanism, and a control unit which reproduces a preset screen direction no matter in which direction the screen faces currently, are combined with each other.
摘要翻译：为了使显示装置以一触式的方式面向预设的屏幕方向，需要控制薄型显示装置的自支撑架。通过检测安装在电动屏幕方向改变机构中的可变电阻器等电阻容量的电阻值来不断地识别显示装置的屏幕方向并检测其自己的方向的功能，以及再现预设屏幕方向的控制单元无论屏幕面向哪个方向，彼此组合。

18. 发明授权

US07160820B2 Method of preparing oxide crystal film/substrate composite and solution for use therein 有权
标题翻译：制备氧化物晶体膜/底物复合物的方法及其中使用的溶液
公开(公告)号：US07160820B2
公开(公告)日：2007-01-09
申请号：US10478063
申请日：2002-05-15
申请人： Toshihiro Suga , Yasuji Yamada , Toshihiko Maeda , Seok Beom Kim , Haruhiko Kurosaki , Yutaka Yamada , Izumi Hirabayashi , Yasuhiro Iijima , Tomonori Watanabe , Hisashi Yoshino , Koji Muranaka
发明人： Toshihiro Suga , Yasuji Yamada , Toshihiko Maeda , Seok Beom Kim , Haruhiko Kurosaki , Yutaka Yamada , Izumi Hirabayashi , Yasuhiro Iijima , Tomonori Watanabe , Hisashi Yoshino , Koji Muranaka
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C30B19/02 , C30B29/22 , C30B29/225
摘要： There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO—CuO—BaF2 system or a BaO—CuO—Ag—BaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850° C.
摘要翻译：提供了通过使用液相法在基板上从溶液相形成Y123型氧化物晶体膜来制备氧化物晶体膜和基板的复合材料的方法，其中诸如氧化物晶体膜的破裂，氧化物晶体膜与基板的分离以及基板和溶液之间的反应层的显影可以最小化。用于形成溶液相的溶剂使用BaO-CuO-BaF 2系统或BaO-CuO-Ag-BaF 2系统，并且当具有种子的基底与表面接合的结晶膜与溶液接触以在基板上形成（生长）氧化物晶体膜，将溶液的温度控制在不高于850℃的温度。

19. 发明申请

US20060199741A1 Superconductor layer and method of manufacturing the same 审中-公开
公开(公告)号：US20060199741A1
公开(公告)日：2006-09-07
申请号：US11416237
申请日：2006-05-03
申请人： Takeshi Araki , Toshiharu Niwa , Takemi Muroga , Yutaka Yamada , Izumi Hirabayashi
发明人： Takeshi Araki , Toshiharu Niwa , Takemi Muroga , Yutaka Yamada , Izumi Hirabayashi
IPC分类号： H01L39/24
CPC分类号： H01L39/2425
摘要： There is provided is a method of manufacturing a superconductor layer, including preparing a coating solution by dissolving trifluoroacetates of at least one metal selected from the group consisting of yttrium and lanthanoids, barium, and copper in a solvent, coating a main surface of a substrate with the coating solution to form a coating film, subjecting the coating film to a calcining process in an atmosphere containing oxygen, and subjecting the coating film after the calcining process to a firing process in an atmosphere containing water vapor at a temperature higher than that at the calcining process. The calcining process is carried out such that the coating film after the calcining process and before the firing process have an average CuO particle diameter equal to or less than 25 nm.

20. 发明申请

US20060033054A1 Method for fabricating a semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20060033054A1
公开(公告)日：2006-02-16
申请号：US11253558
申请日：2005-10-20
申请人： Yutaka Yamada
发明人： Yutaka Yamada
IPC分类号： G01J3/10
CPC分类号： H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68354 , Y10S438/977 , Y10T29/41 , Y10T29/5102 , Y10T29/5193
摘要： A method of fabricating a semiconductor device includes the steps of, after sawing a semiconductor substrate into individual semiconductor chips in a state that the semiconductor substrate is covered by an adhesive tape, applying a dry gas to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, applying an infrared radiation to the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, and curing the adhesive layer on the adhesive tape in a state that the adhesive tape carries thereon the semiconductor chips, by irradiating a ultraviolet radiation to the adhesive tape, wherein the step of applying the dry gas, the step of applying the infrared radiation and the said step of curing the adhesive layer are conducted substantially simultaneously.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在半导体衬底被粘合带覆盖的状态下将半导体衬底切割成单独的半导体芯片之后，在粘合带的状态下将干燥气体施加到粘合带上在其上承载半导体芯片，在粘合带上携带有半导体芯片的状态下将红外线辐射施加到粘合带上，并且在粘合带上携带有半导体芯片的状态下固化胶带上的粘合剂层，通过将紫外线辐射照射到胶带上，其中施加干燥气体的步骤，施加红外辐射的步骤和固化粘合剂层的所述步骤基本上同时进行。

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