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11. 发明申请

US20130270435A1 ELECTRON BEAM DEVICE 有权
标题翻译：电子束装置
公开(公告)号：US20130270435A1
公开(公告)日：2013-10-17
申请号：US13879051
申请日：2011-10-05
申请人： Yasunari Sohda , Takeyoshi Ohashi , Tasuku Yano , Muneyuki Fukuda , Noritsugu Takahashi
发明人： Yasunari Sohda , Takeyoshi Ohashi , Tasuku Yano , Muneyuki Fukuda , Noritsugu Takahashi
IPC分类号： H01J37/02
CPC分类号： H01J37/023 , H01J37/153 , H01J37/28 , H01J2237/1534
摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要翻译：电子束装置包括电子源和物镜偏转器。电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器，在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。

12. 发明授权

US08405026B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US08405026B2
公开(公告)日：2013-03-26
申请号：US12554275
申请日：2009-09-04
申请人： Tomoyasu Shojo , Muneyuki Fukuda , Naomasa Suzuki , Noritsugu Takahashi
发明人： Tomoyasu Shojo , Muneyuki Fukuda , Naomasa Suzuki , Noritsugu Takahashi
IPC分类号： H01J3/14 , G01N23/00
CPC分类号： H01J37/153 , H01J37/04 , H01J37/28
摘要： Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle.
摘要翻译：本文公开了一种带电粒子束装置，其能够根据目标物镜孔径来控制探针电流和物镜发散角度，以获得所需的探针电流和期望的物体发散角。该装置被配置为在第一和第二聚光透镜之间包括物镜孔，以根据物镜孔的直径来计算和设置第一聚光透镜的控制值，以获得所需的探针电流，并计算根据目标发散角的孔的直径和第二聚光透镜设定装置的控制值的第二聚光透镜设定装置的控制值，由此设定计算出的第二聚光透镜设定装置的控制值，客观发散角。

13. 发明申请

US20120261574A1 Electron Beam Apparatus and Electron Beam Inspection Method 有权
标题翻译：电子束设备和电子束检测方法
公开(公告)号：US20120261574A1
公开(公告)日：2012-10-18
申请号：US13530797
申请日：2012-06-22
申请人： Muneyuki Fukuda , Tomoyasu Shojo , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki , Ichiro Tachibana
发明人： Muneyuki Fukuda , Tomoyasu Shojo , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki , Ichiro Tachibana
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/221 , H01J2237/2444 , H01J2237/2448 , H01J2237/24485 , H01J2237/2449 , H01J2237/24495
摘要： An electron beam apparatus which includes a sample stage on which a sample is placed, and an electron optical system. The electron optical system includes an electron gun that generates a primary electron beam, an immersion objective lens that converges the primary electron beam on the sample, an E×B deflector that separates a secondary particle, which is generated from irradiation of the primary beam to the sample, from an optical axis of the primary beam, a reflecting member to which the secondary particle collides, an assist electrode which is located under the reflecting member, a plurality of incidental particle detectors that selectively detect a velocity component and an azimuth component of a ternary particle which is generated by the secondary particle colliding to the reflecting member, and a center detector that is located above the reflecting member.
摘要翻译：一种电子束装置，包括放置样品的样品台和电子光学系统。电子光学系统包括：电子枪，其产生一次电子束，将一次电子束收敛在样品上的浸没物镜;将主光束照射产生的二次粒子分离的E×B偏转器; 来自主光束的光轴的样品，二次粒子碰撞的反射部件，位于反射部件下方的辅助电极，多个附带的粒子检测器，其选择性地检测速度分量和方位分量由二次粒子与反射部件碰撞产生的三元粒子，以及位于反射部件上方的中心检测器。

14. 发明申请

US20110114476A1 Method and apparatus for specimen fabrication 有权
公开(公告)号：US20110114476A1
公开(公告)日：2011-05-19
申请号：US12929396
申请日：2011-01-20
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： C23C14/34
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

15. 发明授权

US07557347B2 Charged particle beam apparatus, scanning electron microscope, and sample observation method using the same 有权
标题翻译：带电粒子束装置，扫描电子显微镜和使用其的样品观察方法
公开(公告)号：US07557347B2
公开(公告)日：2009-07-07
申请号：US11882701
申请日：2007-08-03
申请人： Tomoyasu Shojo , Muneyuki Fukuda , Naomasa Suzuki
发明人： Tomoyasu Shojo , Muneyuki Fukuda , Naomasa Suzuki
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/244 , H01J37/153 , H01J37/28 , H01J2237/057 , H01J2237/2448 , H01J2237/24485 , H01J2237/2449 , H01J2237/24592
摘要： A charged particle beam apparatus for acquiring high-definition and highly contrasted observation images by detecting efficiently secondary signals without increasing aberration of the primary electron beam, detecting defects from observation images and thus increasing the inspection speed and enhancing the sensitivity of inspection. The desired area of the sample is scanned with a primary charged particle beam, and the secondary charged particles generated secondarily from the area by the irradiation of the primary charged particle beam are led to collide with the secondary electron conversing electrode, and then the secondary electrons generated by the first E×B deflector 31 arranged through an insulator on the surface of the secondary electron conversing electrode on the side of the sample is absorbed by the detector. At the same time, the deflection chromatic aberration that had been generated in the primary charged particle beam by the first E×B deflector is reduced by the second E×B deflector arranged on the first E×B deflector, to obtain high-definition and highly contrasted observation images free of shading.
摘要翻译：一种带电粒子束装置，用于通过高效检测二次信号而不增加一次电子束的像差，从观察图像中检测缺陷，从而提高检查速度，提高检查灵敏度，从而获取高分辨率和高对比度的观察图像。用初级带电粒子束扫描样品的期望面积，并且通过初级带电粒子束的照射从该区域二次生成的二次带电粒子被引导与二次电子转换电极碰撞，然后二次电子由通过检测器侧面上的二次电子转换电极的表面上的绝缘体布置的第一ExB偏转器31产生的。同时，通过布置在第一ExB偏转器上的第二ExB偏转器减少由第一ExB偏转器在一次带电粒子束中产生的偏转色差，以获得高清晰度和高对比度的观察图像，阴影。

16. 发明申请

US20090121158A1 APPARATUS AND METHOD FOR SPECIMEN FABRICATION 有权
标题翻译：仪器制造的装置和方法
公开(公告)号：US20090121158A1
公开(公告)日：2009-05-14
申请号：US12354153
申请日：2009-01-15
申请人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
发明人： Satoshi Tomimatsu , Miyuki Takahashi , Hiroyasu Shichi , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/31744 , H01J2237/31745
摘要： A specimen fabricating apparatus comprises: a specimen stage, on which a specimen is placed; a charged particle beam optical system to irradiate a charged particle beam on the specimen; an etchant material supplying source to supply an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state; and a vacuum chamber to house therein the specimen stage. A specimen fabricating method comprises the steps of: processing a hole in the vicinity of a requested region of a specimen by means of irradiation of a charged particle beam; exposing the requested region by means of irradiation of the charged particle beam; supplying an etchant material, which contains fluorine and carbon in molecules thereof, does not contain oxygen in molecules thereof, and is solid or liquid in a standard state, to the requested region as exposed; and irradiating the charged particle beam on the requested region as exposed.
摘要翻译：试样制造装置包括：样品台，放置试样; 带电粒子束光学系统，用于将带电粒子束照射在样本上; 供给来源的蚀刻剂材料在其分子中含有氟和碳的蚀刻剂材料，其分子中不含氧，在标准状态下为固体或液体; 以及在其中容纳样品台的真空室。试样制造方法包括以下步骤：通过照射带电粒子束来处理试样的要求区域附近的孔; 通过照射带电粒子束使被请求区域曝光; 在其分子中供给含有氟和碳的蚀刻剂材料在其分子中不含氧，并且在标准状态下为固体或液体，暴露于所要求的区域; 以及将所述带电粒子束照射在被请求区域上。

17. 发明授权

US07449690B2 Inspection method and inspection apparatus using charged particle beam 有权
标题翻译：使用带电粒子束的检查方法和检查装置
公开(公告)号：US07449690B2
公开(公告)日：2008-11-11
申请号：US11349974
申请日：2006-02-09
申请人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
发明人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/24495 , H01J2237/2817
摘要： To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.
摘要翻译：为了建立能够在发射二次电子的方向上对高程和方位角进行排序并获得具有强调对比度的图像的技术，以便在制造期间对晶片检查中的浅凹凸和微观异物进行检查和分析半导体器件使用电磁重叠物镜实现高分辨率，电子束使用物镜窄聚焦，用于加速晶片附近的二次电子的电场，以抑制对二次电子能量的依赖性通过电子束的照射产生的二次电子的旋转，环状检测器板设置在电子源和物镜之间，并且从二次电子的位置观察二次电子的仰角的低角分量并且高角度分量被分离，也是azimu 分离和检测。

18. 发明申请

US20080067385A1 Method and apparatus for processing a micro sample 有权
公开(公告)号：US20080067385A1
公开(公告)日：2008-03-20
申请号：US11980654
申请日：2007-10-31
申请人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
发明人： Mitsuo Tokuda , Muneyuki Fukuda , Yasuhiro Mitsui , Hidemi Koike , Satoshi Tomimatsu , Hiroyasu Shichi , Hideo Kashima , Kaoru Umemura
IPC分类号： G21K5/08 , G01N23/225
CPC分类号： H04L29/06 , G01N23/225 , H01J37/256 , H01J37/3056 , H01J2237/20 , H01J2237/202 , H01J2237/31745 , H04L67/16 , H04L69/329
摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

19. 发明申请

US20070252092A1 Method for depositing a film using a charged particle beam, method for performing selective etching using the same, and charged particle beam equipment therefor 失效
标题翻译：使用带电粒子束沉积膜的方法，使用其进行选择性蚀刻的方法及其带电粒子束设备
公开(公告)号：US20070252092A1
公开(公告)日：2007-11-01
申请号：US11808783
申请日：2007-06-13
申请人： Muneyuki Fukuda , Hiroyasu Shichi
发明人： Muneyuki Fukuda , Hiroyasu Shichi
IPC分类号： H01J37/305
CPC分类号： C23C16/047 , C23C16/52 , H01J37/3023 , H01J2237/30472 , H01J2237/31732 , H01J2237/31745
摘要： Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.
摘要翻译：某些薄膜沉积和选择性蚀刻技术可能包括分别与沉积气体和蚀刻气体一起扫描带电粒子束。在常规方法中，不幸的是，沉积速率或选择比通常根据光学系统设置，扫描间隔，停留时间，循环时间，衬底等而降低。因此，提供了一种用于找到光学系统设置，驻留时间和扫描间距。发现这些参数是根据沉积速率或蚀刻速率的循环时间依赖性来实现带电粒子束的最佳扫描方法。该沉积速率或蚀刻速率是预先存储于应进行成膜或选择性蚀刻的期望的照射区域的测量值。该装置在显示装置上显示其判断结果。

20. 发明授权

US07268356B2 Method and apparatus for specimen fabrication 有权
标题翻译：用于样品制造的方法和装置
公开(公告)号：US07268356B2
公开(公告)日：2007-09-11
申请号：US10898592
申请日：2004-07-26
申请人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
发明人： Hiroyasu Shichi , Tohru Ishitani , Hidemi Koike , Kaoru Umemura , Eiichi Seya , Mitsuo Tokuda , Satoshi Tomimatsu , Hideo Kashima , Muneyuki Fukuda
IPC分类号： G21G5/00
CPC分类号： G01N23/20 , B23K15/0006 , B23K15/0013 , G01N1/286 , H01J2237/3114 , H01J2237/31745
摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.
摘要翻译：相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品通过转动样品台来控制切片。

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