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11. 发明授权

US08670211B1 Method and system for providing high magnetic flux saturation CoFe films 失效
标题翻译：提供高磁通饱和CoFe膜的方法和系统
公开(公告)号：US08670211B1
公开(公告)日：2014-03-11
申请号：US13164991
申请日：2011-06-21
申请人： Ming Sun , Jose A. Medina , Keith Y. Sasaki , Ming Jiang
发明人： Ming Sun , Jose A. Medina , Keith Y. Sasaki , Ming Jiang
IPC分类号： G11B5/127 , C25D3/00
CPC分类号： G11B5/3143 , C25D3/562 , C25D5/18 , C25D7/001 , G11B5/3163 , H01F41/26
摘要： A method and system plates CoFeX, where X is an insertion metal. The method and system include providing a plating solution including hydroxymethyl-p-tolylsulfone (HPT). The plating solution being configured to provide a CoFeX film having a high saturation magnetic flux density of greater than 2.3 Tesla and not more than 3 weight percent of X. The method and system also include plating the CoFeX film on a substrate in the plating solution. In some aspects, the plated CoFeX film may be used in structures such as main poles of a magnetic recording head.
摘要翻译：一种方法和系统板CoFeX，其中X是插入金属。该方法和系统包括提供包含羟甲基对甲苯砜（HPT）的电镀溶液。电镀溶液被配置为提供具有大于2.3特斯拉的高饱和磁通密度和不大于X重量百分比的X的高的饱和磁通密度的CoFeX膜。该方法和系统还包括在电镀液中的基底上电镀CoFeX膜。在一些方面，电镀CoFeX膜可以用于诸如磁记录头的主极的结构中。

12. 发明授权

US08497160B2 Method for making solder-top enhanced semiconductor device of low parasitic packaging impedance 有权
标题翻译：制造焊接顶部增强型半导体器件的低寄生封装阻抗的方法
公开(公告)号：US08497160B2
公开(公告)日：2013-07-30
申请号：US13560786
申请日：2012-07-27
申请人： François Hébert , Anup Bhalla , Kai Liu , Ming Sun
发明人： François Hébert , Anup Bhalla , Kai Liu , Ming Sun
IPC分类号： H01L21/60
CPC分类号： H01L24/40 , H01L23/4952 , H01L23/49562 , H01L23/64 , H01L24/29 , H01L24/33 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/83 , H01L2224/05624 , H01L2224/29101 , H01L2224/29111 , H01L2224/32245 , H01L2224/37011 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/40249 , H01L2224/4103 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/48472 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2224/4903 , H01L2224/49051 , H01L2224/49111 , H01L2224/49171 , H01L2224/83194 , H01L2224/83801 , H01L2224/84801 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01067 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/13091 , H01L2924/14 , H01L2924/157 , H01L2924/181 , H01L2924/19043 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2924/30107 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/37099
摘要： A solder-top enhanced semiconductor device is proposed for packaging. The solder-top device includes a device die with a top metal layer patterned into contact zones and contact enhancement zones. At least one contact zone is electrically connected to at least one contact enhancement zone. Atop each contact enhancement zone is a solder layer for an increased composite thickness thus lowered parasitic impedance. Where the top metal material can not form a uniform good electrical bond with the solder material, the device die further includes an intermediary layer sandwiched between and forming a uniform electrical bond with the top metal layer and the solder layer. A method for making the solder-top device includes lithographically patterning the top metal layer into the contact zones and the contact enhancement zones; then forming a solder layer atop each of the contact enhancement zones using a stencil process for an increased composite thickness.
摘要翻译：提出了一种焊顶增强型半导体器件进行封装。焊料顶部器件包括具有图案化为接触区域和接触增强区域的顶部金属层的器件裸片。至少一个接触区域电连接到至少一个接触增强区域。每个接触增强区顶部都是一个焊料层，用于增加复合材料厚度，从而降低寄生阻抗。在顶部金属材料不能与焊料材料形成均匀的良好电接合的情况下，器件裸片还包括夹在中间层之间并与顶部金属层和焊料层形成均匀的电接合的中间层。制造焊料顶部器件的方法包括将顶部金属层光刻地图案化成接触区域和接触增强区域; 然后使用用于增加的复合材料厚度的模版工艺在每个接触增强区的顶部上形成焊料层。

13. 发明申请

US20130006982A1 Storing Method of Performance Data and System Thereof 有权
标题翻译：性能数据及其系统的存储方法
公开(公告)号：US20130006982A1
公开(公告)日：2013-01-03
申请号：US13497857
申请日：2010-06-03
申请人： Ming Sun
发明人： Ming Sun
IPC分类号： G06F17/30
CPC分类号： G06F11/3476 , G06F11/3409 , G06F17/30339 , H04L41/0823 , H04L41/0853
摘要： A method and system for storing performance data are disclosed, and the method includes: during a process of adding a collection point, a system creating a data subtable in real time according to the number of added collection points and a predetermined maximum number of collection points of the data subtable; and storing the performance data of the collection point into the created data subtable, and storing the corresponding relationship between the collection point and the data subtable.
摘要翻译：公开了一种存储性能数据的方法和系统，该方法包括：在添加收集点的过程中，根据添加的收集点的数量和预定的最大数量的收集点，实时地生成数据的系统的数据子表; 并将所述收集点的演奏数据存储在所生成的数据中，并且存储所述收集点和所述数据之间的对应关系。

14. 发明授权

US08343801B2 Method of forming a programmable metallization memory cell 有权
标题翻译：形成可编程金属化存储单元的方法
公开(公告)号：US08343801B2
公开(公告)日：2013-01-01
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译：可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

15. 发明授权

US08334165B2 Programmable metallization memory cells via selective channel forming 有权
标题翻译：可编程金属化存储单元通过选择性通道形成
公开(公告)号：US08334165B2
公开(公告)日：2012-12-18
申请号：US12761899
申请日：2010-04-16
申请人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
发明人： Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
IPC分类号： H01L21/00
CPC分类号： H01L45/085 , H01L27/2409 , H01L27/2436 , H01L27/2463 , H01L27/2472 , H01L45/1233 , H01L45/1246 , H01L45/1266 , H01L45/141 , H01L45/143 , H01L45/1625 , H01L45/1633 , H01L45/1658 , H01L45/1675
摘要： Methods for making a programmable metallization memory cell are disclosed.
摘要翻译：公开了制造可编程金属化存储单元的方法。

16. 发明授权

US08330264B2 Packaging configurations for vertical electronic devices using conductive traces disposed on laminated board layers 有权
公开(公告)号：US08330264B2
公开(公告)日：2012-12-11
申请号：US13454342
申请日：2012-04-24
申请人： Ming Sun , Yueh Se Ho
发明人： Ming Sun , Yueh Se Ho
IPC分类号： H01L23/12
CPC分类号： H01L23/49816 , H01L23/3677 , H01L23/49844 , H01L23/5389 , H01L2224/16225 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13055 , H01L2924/13091 , H01L2924/15311 , H01L2924/15331 , H01L2924/19041 , H01L2924/30107 , H01L2924/00
摘要： This invention discloses an electronic package for containing a vertical semiconductor chip that includes a laminated board having a via connector and conductive traces distributed on multiple layers of the laminated board connected to the via connector. The semiconductor chip having at least one electrode connected to the conductive traces for electrically connected to the conductive traces at a different layer on the laminated board and the via connector dissipating heat generated from the vertical semiconductor. A ball grid array (BGA) connected to the via connector functioning as contact at a bottom surface of the package for mounting on electrical terminals disposed on a printed circuit board (PCB) wherein the laminated board having a thermal expansion coefficient in substantially a same range the PCB whereby the BGA having a reliable electrical contact with the electrical terminals.

17. 发明申请

US20120234935A1 Variable flow concentration product dispenser 有权
标题翻译：可变流量浓缩产品分配器
公开(公告)号：US20120234935A1
公开(公告)日：2012-09-20
申请号：US13066729
申请日：2011-04-22
申请人： Ming Sun
发明人： Ming Sun
IPC分类号： B05B7/30 , B05B11/00 , B05B1/30
CPC分类号： B05B7/2443 , B05B1/3013 , B05B7/12
摘要： The dispenser draws a concentrate fluid from a liquid container into an input fluid. There is an elongated channel having an input for the input fluid and dispensing nozzle at an exit end for dispensing the concentrate fluid in a diluted form. A transverse intersecting channel is intermediate the input end and the exit end. An insert is moveable in the transverse intersecting channel, apertures of the moveable insert being alignable with apertures in the transverse intersecting channel and the liquid container. The channels from the liquid container will have a plurality of various sized apertures to provide for the flow of differing amounts of concentrate fluid into the input fluid. By adjusting the moveable insert in the transverse intersecting channel and/or the input fluid flow rate the concentration of concentrate fluid in the input fluid is changed.
摘要翻译：分配器将浓缩液从液体容器吸入输入流体。具有细长通道，其具有用于在出口端处的输入流体和分配喷嘴的输入，用于以稀释形式分配浓缩液。横向相交通道位于输入端和出口端之间。插入件可在横向交叉通道中移动，可移动插入件的孔与横向相交通道和液体容器中的孔对准。来自液体容器的通道将具有多个各种尺寸的孔，以提供不同量的浓缩液流入输入流体的流量。通过调整横向交叉通道中的可移动插入件和/或输入流体流速，改变输入流体中的浓缩液的浓度。

18. 发明授权

US08134138B2 Programmable metallization memory cell with planarized silver electrode 有权
标题翻译：具有平面化银电极的可编程金属化存储单元
公开(公告)号：US08134138B2
公开(公告)日：2012-03-13
申请号：US12362532
申请日：2009-01-30
申请人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
发明人： Tian Wei , Dexin Wang , Venugopalan Vaithyanathan , Yang Dong , Muralikrishnan Balakrishnan , Ivan Petrov Ivanov , Ming Sun , Dimitar Velikov Dimitrov
IPC分类号： H01L29/02
CPC分类号： B82Y10/00 , G11C13/0011 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/16
摘要： Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact.
摘要翻译：公开了具有平面化银电极的可编程金属化存储单元及其形成方法。可编程金属化存储单元包括第一金属触点和第二金属触点，离子导体固体电解质材料位于第一金属触点和第二金属触点之间，并且银合金掺杂电极将离子导体固体电解质材料与第一金属接触或第二金属接触，或银掺杂电极将离子导体固体电解质材料与第一金属接触分离。银电极包括银层和将银层与第一金属触点分开的金属种子层。

19. 发明申请

US20120040496A1 PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER 有权
标题翻译：具有氧化层的可编程电阻记忆体
公开(公告)号：US20120040496A1
公开(公告)日：2012-02-16
申请号：US13278240
申请日：2011-10-21
申请人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
发明人： Ming Sun , Michael Xuefei Tang , Insik Jin , Venkatram Venkatasamy , Philip George Pitcher , Nurul Amin
IPC分类号： H01L21/8239
CPC分类号： H01L45/085 , H01L27/2436 , H01L45/1233 , H01L45/141 , H01L45/146
摘要： Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode.
摘要翻译：可编程金属化存储单元包括在电化学活性电极和惰性电极之间的电化学活性电极和惰性电极以及离子导体固体电解质材料。电绝缘氧化物层将离子导体固体电解质材料与电化学活性电极分离。

20. 发明申请

US20120015404A1 GENE CLUSTER FOR THURINGIENSIN SYNTHESIS 审中-公开
标题翻译：神经元合成基因簇
公开(公告)号：US20120015404A1
公开(公告)日：2012-01-19
申请号：US13145071
申请日：2009-12-15
申请人： Ming Sun , Ziniu Yu , Lifang Ruan , Shouwen Chen , Xiaoyan Liu , Donghai Peng
发明人： Ming Sun , Ziniu Yu , Lifang Ruan , Shouwen Chen , Xiaoyan Liu , Donghai Peng
IPC分类号： C12P19/44 , C12N1/20 , C12N15/61
CPC分类号： C12N15/52 , C07K14/32
摘要： The invention belongs to the technical field of genetic engineering of agricultural microorganisms. Specifically, the invention relates to producing and using gene cluster for thuringiensin synthesis from Bacillus thuringiensis. The gene cluster includes 11 genes of thuA, thuB, thuC, thuD, thuE, thuF, thuG, thu1, thu2, thu3 and thu4. These genes have the nucleotide sequence as shown in SEQ ID NO: 1. And the thuringiensin biosynthetase encoded by these genes have the amino acid sequences as shown in SEQ ID NO: 2-12. The genes according to the invention and the proteins encoded by those genes can be used as new nucleosides lead compound of pesticide library and provide new target for developing insecticides. In practical use, a series of new, efficient and low toxic insecticide can be obtained by structure modification.
摘要翻译：本发明属于农业微生物遗传工程技术领域。具体地说，本发明涉及生产和使用苏云金芽孢杆菌的苏氨酸素合成基因簇。基因簇包含thuA，thuB，thuC，thuD，thuE，thuF，thuG，thu1，thu2，thu3和thu4等11个基因。这些基因具有如SEQ ID NO：1所示的核苷酸序列。由这些基因编码的苏云金素生物合成酶具有如SEQ ID NO：2-12所示的氨基酸序列。根据本发明的基因和由这些基因编码的蛋白质可以用作农药图谱的新核苷酸铅化合物，并提供开发杀虫剂的新靶标。在实际应用中，通过结构修饰可以获得一系列新型，高效，低毒的杀虫剂。

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