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11. 发明授权

US07637662B2 Rolling guide unit 有权
标题翻译：滚动导轨单元
公开(公告)号：US07637662B2
公开(公告)日：2009-12-29
申请号：US11192880
申请日：2005-07-29
申请人： Masataka Kato , Norimasa Agari
发明人： Masataka Kato , Norimasa Agari
IPC分类号： F16C29/06
CPC分类号： F16C29/0685 , F16C29/0609
摘要： A rolling guide unit as provided here is capable of raising the degree of flexibility in design and simplifying the control of lubricating oil and has a low sliding resistance to the rolling elements. The rolling guide unit is provided with a cylindrical member 2 through which a rail 1 passes for it to slide on, raceway paths a constituted of a combination of the cylindrical member 2 and the rail 1, circuit paths b formed in the cylindrical member 2 and each making interconnection between the two ends of each of the raceway paths a by way of direction-changing recesses 18, and a plurality of rolling elements 19 placed in the circuit paths b and the raceway paths a. The rolling elements 19 circulate in the circuit paths b and the raceway paths a in accordance with the relative movement between the rail 1 and the cylindrical member 2. The rolling guide unit is characterized by mounting holes 20 formed in the cylindrical member 2; oiled members 21 respectively installed in the mounting holes 20; and oil-supply members 23 each provided along the contact faces of the rolling elements 19 traveling through either the raceway path a or the circuit path 1. The oil-supply members 23 are in contact with the oiled members 21.
摘要翻译：这里提供的滚动导向单元能够提高设计的灵活性，简化润滑油的控制，并且对滚动元件具有低的滑动阻力。滚动导向单元设有圆柱形构件2，轨道1通过该圆筒构件2滑动，圆筒构件2和导轨1的组合构成的滚道路径a，形成在圆筒构件2中的电路路径b和每个通过方向改变凹部18在每个滚道路径a的两端之间进行互连，以及放置在电路路径b和滚道路径a中的多个滚动元件19。滚动元件19根据轨道1和圆柱形构件2之间的相对运动，在电路路径b和轨道a中循环。滚动导向单元的特征在于安装在圆柱形构件2中的孔20; 分别安装在安装孔20中的上油部件21; 以及供给构件23，其沿着滚动体19的滚道元件19的接触面设置，滚动体19通过滚道路径a或回路路径1。油供给构件23与油面构件21接触。

12. 发明授权

US07528036B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
公开(公告)号：US07528036B2
公开(公告)日：2009-05-05
申请号：US11107826
申请日：2005-04-18
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.

13. 发明申请

US20080219082A1 NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20080219082A1
公开(公告)日：2008-09-11
申请号：US12046150
申请日：2008-03-11
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C8/06 , G11C8/10
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.
摘要翻译：公开了一种非易失性存储器系统，包括至少一个非易失性存储器，每个非易失性存储器具有多个非易失性存储单元和缓冲存储器; 以及耦合到所述非易失性存储器的控制装置。控制装置能够接收外部数据并将数据应用于非易失性存储器，并且使非易失性存储器能够操作程序操作，包括将接收到的数据存储到缓冲存储器并将保存在缓冲存储器中的数据存储到缓冲存储器中的非易失性存储单元。此外，控制装置能够在非易失性存储器在程序操作中操作时接收外部数据。此外，缓冲存储器能够接收与程序运行一次要存储的数据的数据长度相等的数据单位，数据长度大于1字节。

14. 发明授权

US07234873B2 Rolling-contact bearing containing solid lubricant therein 有权
标题翻译：含有固体润滑剂的滚动接触轴承
公开(公告)号：US07234873B2
公开(公告)日：2007-06-26
申请号：US10786287
申请日：2004-02-26
申请人： Masataka Kato , Toshiaki Nishimatsu
发明人： Masataka Kato , Toshiaki Nishimatsu
IPC分类号： F16C33/66 , F16C33/56
CPC分类号： F16C33/6677 , F16C13/006 , F16C19/44 , F16C33/56 , F16C33/565 , F16C33/6648 , F16C33/6696
摘要： A cage, rollers and solid lubricant are all formed integrally into a complete unitary molding with using difference in thermal expansion in a mold. Assembling the complete unitary molding into the race in the rolling-contact bearing is made easier. The complete unitary molding is made such that the rollers remain exposed partially at their rolling surfaces above the inside circular surface of the complete unitary molding while the solid lubricant on the outside circular surface of the complete unitary molding is squeezed out from between the rolling surfaces of the rollers and the inside circular surface of the outside mold upon molding operation, thereby getting the rolling surfaces of the rollers exposed partially. The mold is composed of an outside mold, an inside mold and an intermediate mold, which is made of a substance larger in thermal expansion than other substance for the outside and inside molds.
摘要翻译：使用模具中的热膨胀差异，笼子，滚子和固体润滑剂都整体形成为完整的单一模制件。将完整的整体成型装配到滚动接触轴承中的滚道更容易。完整的整体模制被制成使得辊在其整个模制件的内部圆形表面上方的滚动表面部分地暴露在整个模制件的外部圆形表面上的固体润滑剂从滚动表面的滚动表面之间被挤出辊和外模的内圆形表面，从而使辊的滚动表面部分暴露。该模具由外部模具，内部模具和中间模具组成，其由热膨胀的物质制成，而不是外部和内部模具中的其他物质。

15. 发明申请

US20060102967A1 Semiconductor integrated circuit 失效
公开(公告)号：US20060102967A1
公开(公告)日：2006-05-18
申请号：US11320850
申请日：2005-12-30
申请人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
发明人： Yoshiaki Kamigaki , Shinichi Minami , Kozo Katayama , Masataka Kato
IPC分类号： H01L29/76
CPC分类号： G11C16/0475 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42332 , H01L29/7887
摘要： A multi-storage nonvolatile memory of high density, high speed and high reliability has a memory transistor and switch transistors disposed on both the sides of the memory transistor. The memory transistor includes a gate insulating film having discrete traps and a memory gate electrode, whereas the switch transistors include switch gate electrodes. The gate insulating film has the discrete traps for storing information charge, can locally inject carriers, and one memory cell constitutes a multi-storage cell for storing at least information of 2 bits. The switch transistors having the switch gate electrodes realize source side injection. The memory transistor is fommed together with the switch transistors in self-aligned diffusion. The memory gate electrode of the memory transistor is connected to a word line so as to perform word-line erase.

16. 发明申请

US20050252319A1 Dust proof sliding device 有权
标题翻译：防尘滑动装置
公开(公告)号：US20050252319A1
公开(公告)日：2005-11-17
申请号：US11085081
申请日：2005-03-22
申请人： Masataka Kato
发明人： Masataka Kato
IPC分类号： F16H7/02 , F16C29/08 , F16H7/08 , F16H25/20 , F16H25/24
CPC分类号： F16C29/08 , Y10T74/18576 , Y10T74/18712 , Y10T74/1872
摘要： A sliding device is extensively acceptable for a variety of machines, made reduced in the overall length, thereby compact in construction. The sliding device, since having a drive train enclosure made airtight, is acceptable for the operation in the clean environment. The sliding device is comprised of an elongated sliding unit enclosure of airtight construction, a sliding table and a driving motor that is coupled to the drive train enclosure in parallel with the sliding unit enclosure. The drive train enclosure receives therein a drive train to carry power from the driving motor to the sliding table. The drive train enclosure is mounted with the driving motor with keeping airtightness.
摘要翻译：滑动装置对于各种机器是广泛可接受的，减小了总长度，从而在结构上紧凑。滑动装置由于具有气密的传动系，因此在干净的环境中操作是可以接受的。滑动装置由气密结构的细长滑动单元壳体，滑动台和驱动马达组成，驱动马达与滑动单元外壳平行地联接到传动系外壳。传动系统箱内容纳传动系，以将驱动电机的动力传递到滑台。传动系外壳与驱动电机一起安装，保持气密性。

17. 发明授权

US06749057B2 Sealing means for sliding unit 有权
标题翻译：用于滑动单元的密封装置
公开(公告)号：US06749057B2
公开(公告)日：2004-06-15
申请号：US10283178
申请日：2002-10-30
申请人： Masataka Kato
发明人： Masataka Kato
IPC分类号： B65G2500
CPC分类号： F16C29/063 , B23Q1/58 , B23Q11/08 , F16C29/082 , F16C2322/39 , F16H25/2418
摘要： With a sealing structure for the sliding unit disclosed here, a sealing member of foam rubber is disposed in a way closing a clearance left open between widthwise opposing covering shells installed on a track rail. A covering shell is composed of a covering side secured to a side wall of a track rail, and seal supporters integral with the covering side. A slider is provided with a projection extending through between inside fronts of the sealing members, which come into abutment against one another. Upon the back-and-forward linear movement of the slider relatively to the track rail, the projection moves in a way deforming the sealing members in expansion/collapse fashion, with keeping the close sliding engagement with the confronting fronts of the sealing members so that the sealing members keep constantly closing the clearance left open between the covering shells.
摘要翻译：通过这里公开的用于滑动单元的密封结构，泡沫橡胶的密封构件以闭合在安装在轨道轨道上的宽度方向相对的覆盖壳之间的左开口的方式设置。覆盖壳由固定到轨道轨道的侧壁的覆盖侧和与覆盖侧成一体的密封支撑体构成。滑块设置有突出部，该凸起延伸穿过密封构件的内侧，彼此抵接。在滑块相对于轨道轨道的前后线性运动中，突起以使膨胀/倒塌方式使密封构件变形的方式移动，同时保持与密封构件的相对面的紧密滑动接合，使得密封构件保持恒定地关闭盖罩之间的间隙。

18. 发明授权

US06738310B2 Nonvolatile semiconductor memory 失效
公开(公告)号：US06738310B2
公开(公告)日：2004-05-18
申请号：US10351524
申请日：2003-01-27
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C700
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Disclosed is a nonvolatile memory system including at least one nonvolatile memory each having a plurality of nonvolatile memory cells and a buffer memory; and a control device coupled to the nonvolatile memory. The control device is enabled to receive external data and to apply the data to the nonvolatile memory, and the nonvolatile memory is enabled to operate a program operation including storing the received data to the buffer memory and storing the data held in the buffer memory to ones of nonvolatile memory cells. Moreover, the control device is enabled to receive external data while the nonvolatile memory is operating in the program operation. Also, the buffer memory is capable of receiving a unit of data, equal to the data length of data to be stored at one time of the program operation, the data length being more than 1 byte.

19. 发明授权

US06272042B1 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US06272042B1
公开(公告)日：2001-08-07
申请号：US09630426
申请日：2000-08-01
申请人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
发明人： Masataka Kato , Tetsuo Adachi , Toshihiro Tanaka , Toshio Sasaki , Hitoshi Kume , Katsutaka Kimura
IPC分类号： G11C1604
CPC分类号： G11C16/0416 , G11C8/08 , G11C16/10 , G11C16/12 , G11C16/16 , G11C16/34 , G11C16/3418 , G11C16/3427 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/7883 , H01L29/7885
摘要： Each memory cell of a nonvolatile semiconductor memory, essentially, consists of a one-transistor type memory cell such as a MOSFET having a floating gate electrode. When an electric programming operation is carried out, a positive voltage is applied to an n type drain region, a negative voltage is applied to a control gate and a source region is grounded. When an erasing operation is carried out, the positive voltage is applied to the control gate while all the other electrodes and a semiconductor substrate are grounded. Low power consumption can be accomplished because both of the programming operation and erasing operations are carried out by utilizing a tunneling mechanism. Furthermore, because the negative voltage applied to the word line, a drain voltage at the time of programming of data can be lowered, so that degradation of a gate oxide film at a channel portion can be mitigated.
摘要翻译：非易失性半导体存储器的每个存储单元基本上由诸如具有浮置栅电极的MOSFET的单晶体管型存储单元组成。当执行电编程操作时，向n型漏极区域施加正电压，向控制栅极施加负电压，并且源极区域接地。当执行擦除操作时，正电压被施加到控制栅极，而所有其它电极和半导体衬底接地。可以实现低功耗，因为通过利用隧道机制来执行编程操作和擦除操作两者。此外，由于施加到字线的负电压，可以降低数据编程时的漏极电压，从而可以减轻沟道部分处的栅极氧化膜的劣化。

20. 发明授权

US5978270A Semiconductor non-volatile memory device and computer system using the same 失效
标题翻译：半导体非易失性存储器件和使用其的计算机系统
公开(公告)号：US5978270A
公开(公告)日：1999-11-02
申请号：US29748
申请日：1998-03-02
申请人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
发明人： Toshihiro Tanaka , Masataka Kato , Osamu Tsuchiya , Toshiaki Nishimoto
IPC分类号： G11C16/04 , G11C16/28 , G11C16/34 , G11C16/06
CPC分类号： G11C16/3413 , G11C16/0416 , G11C16/28 , G11C16/3404 , G11C16/3409 , G11C16/3459
摘要： After decreasing the threshold voltages of a plurality of memory cells collectively or selectively, the presence or absence of any memory cell of which the threshold voltage has dropped below a predetermined voltage verified collectively for each of memory cell groups connected to word line (low-threshold value verification), and any memory cell of which the threshold voltage has excessively dropped is selectively written. Also, the well of each of memory cell is formed in the region of an element isolation layer for isolating it from the substrate of a memory apparatus, and a negative voltage is supplied to the memory well distributively with a positive voltage applied as a word line voltage, thus supplying them as erase operation voltages. The absolute value of the memory well voltage is set substantially equal to or lower than the word line voltage for the read operation. Sectors constituting each memory mat includes a sector (selected sector) selected for the erase operation with each word line thereof supplied with a positive voltage, a sector (non-selected sector) not selected for the erase operation with a word line voltage different from a memory well voltage, and further a sector (completely non-selected sector) not selected for the erase operation with a word line voltage equal to the voltage between a source and a drain of the memory cell.
摘要翻译： PCT No.PCT / JP96 / 02419 Sec。 371日期1998年3月2日 102（e）1998年3月2日PCT PCT 1996年8月29日PCT公布。公开号WO97 / 08707 日期1997年3月6日在集体或选择性地降低多个存储器单元的阈值电压之后，存在或不存在阈值电压已经下降到预定电压以下的任何存储单元，该存储单元对于连接到字的每个存储单元组线路（低阈值验证），并且选择性地写入阈值电压过度下降的任何存储单元。此外，存储单元的阱形成在用于将其与存储装置的基板隔离的元件隔离层的区域中，并且以施加作为字线的正电压将负电压分配地提供给存储器电压，从而将其提供为擦除操作电压。存储器阱电压的绝对值被设定为基本上等于或低于读取操作的字线电压。构成每个存储器垫的扇区包括为其擦除操作选择的扇区（选择的扇区），其每个字线被提供有正电压，未被选择用于擦除操作的扇区（未选择的扇区），字线电压不同于存储器阱电压，以及未被选择用于具有等于存储器单元的源极和漏极之间的电压的字线电压的擦除操作的扇区（完全未选择的扇区）。

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