专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US08044520B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08044520B2
公开(公告)日：2011-10-25
申请号：US11624767
申请日：2007-01-19
申请人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
发明人： Noboru Akiyama , Takayuki Hashimoto , Masaki Shiraishi , Tetsuya Kawashima , Koji Tateno , Nobuyoshi Matsuura
IPC分类号： H01L23/52 , H01L29/40
CPC分类号： H01L25/16 , H01L24/37 , H01L24/40 , H01L2224/05554 , H01L2224/37124 , H01L2224/37147 , H01L2224/40245 , H01L2224/40247 , H01L2224/45144 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/49175 , H01L2224/73221 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H02M3/1588 , H03K17/08142 , H03K17/162 , H03K17/6871 , H03K2217/0036 , Y02B70/1466 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.
摘要翻译：一种能够减少大电流和高频损耗的电源。在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的时间短于连接驱动器IC芯片的输出端子与栅极端子的布线DH的布线长度高端功率MOSFET芯片或源极端子。此外，使布线数量DL大于布线数量DH。

12. 发明申请

US20070278516A1 Semiconductor device and power source unit using the same 有权
标题翻译：半导体器件和电源单元使用相同
公开(公告)号：US20070278516A1
公开(公告)日：2007-12-06
申请号：US11809023
申请日：2007-05-30
申请人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Noboru Akiyama , Masaki Shiraishi , Tetsuya Kawashima
IPC分类号： H01L31/111
CPC分类号： H01L25/16 , G06F1/26 , H01L24/48 , H01L24/49 , H01L2224/0603 , H01L2224/40 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/05599
摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.
摘要翻译：本发明提供一种降低电源单元的主电路的寄生电感的技术。在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

13. 发明申请

US20070090814A1 Semiconductor device and power supply device using the same 有权
标题翻译：半导体装置及使用该装置的电源装置
公开(公告)号：US20070090814A1
公开(公告)日：2007-04-26
申请号：US11585226
申请日：2006-10-24
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： G05F1/613
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

14. 发明申请

US20050161785A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050161785A1
公开(公告)日：2005-07-28
申请号：US11041200
申请日：2005-01-25
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/28 , H01L21/52 , H01L23/02 , H01L23/34 , H01L23/36 , H01L23/495 , H01L25/04 , H01L25/07 , H01L25/18 , H01L27/00
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子 GT1形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线如图6所示，漏极端子DT2形成在芯片3的背面，输出侧板状引线6与漏极端子DT2连接。此外，形成源极端子ST2和栅极端子GT2 在同步功率MOSFET芯片3的主表面上，并且源极端子ST2连接到用于源极13的板状引线。用于源极12和13的板状引线被暴露，因此，增加MCM 1的散热能力。

15. 发明授权

US08692531B2 Switching regulator performing output voltage changing function 有权
标题翻译：开关稳压器执行输出电压变化功能
公开(公告)号：US08692531B2
公开(公告)日：2014-04-08
申请号：US13360987
申请日：2012-01-30
申请人： Tetsuya Kawashima
发明人： Tetsuya Kawashima
IPC分类号： G05F1/00
CPC分类号： H02M3/157 , H02M2001/0025
摘要： A switching regulator can convert an input voltage to a desired output voltage by ON-OFF controlling switching elements with PWM signals. The switching regulator can include a communication interface circuit that receives external operation instructions, an output voltage setting section that changes an output voltage to an output voltage setting value upon receiving an output voltage changing instruction from the outside, a voltage divider and an ADC that converts an error voltage into a digital error signal e[n], the error voltage being a difference between a reference voltage Vref and a detected output voltage value Vfb. The switching regulator can also include a controller that includes an operation control section for calculating a duty factor signal d[n] to determine an ON time proportion of the switching elements and an output voltage changing control section for controlling operation to change the output voltage.
摘要翻译：开关调节器可以通过ON-OFF将输入电压转换为期望的输出电压，从而控制具有PWM信号的开关元件。开关调节器可以包括接收外部操作指令的通信接口电路，输出电压设定部，其在从外部接收到输出电压变化指令时，将输出电压变更为输出电压设定值，分压器和ADC 将误差电压转换为数字误差信号e [n]，误差电压是参考电压Vref与检测的输出电压值Vfb之差。开关调节器还可以包括控制器，其包括用于计算占空因数信号d [n]以确定开关元件的接通时间比例的操作控制部分和用于控制改变输出电压的操作的输出电压变化控制部分。

16. 发明授权

US08445669B2 Production process of ethynylthymidine compounds from 5-methyluridine as a starting material 失效
标题翻译：以5-甲基尿苷为起始原料的乙炔基胸苷化合物的制备方法
公开(公告)号：US08445669B2
公开(公告)日：2013-05-21
申请号：US12936789
申请日：2009-04-10
申请人： Tatsunori Sato , Tetsuya Kawashima , Toshio Miwa , Kazutoyo Dokei , Chikoto Fujimoto
发明人： Tatsunori Sato , Tetsuya Kawashima , Toshio Miwa , Kazutoyo Dokei , Chikoto Fujimoto
IPC分类号： C07H19/167
CPC分类号： C07H19/067 , C07D405/04 , C07H19/06 , Y02P20/55
摘要： The present invention provides a process for producing 2′,3′-didehydro-3′-deoxy-4′-ethynylthymidine, which is useful as a medicine, in an efficient and industrially advantageous manner, and more specifically, provides a process for producing 2′,3′-didehydro-3′-deoxy-4′-ethynylthymidine as shown below. (wherein R1 and R2 independently represent a protective group for a hydroxy group, or R1 and R2 together form a protective group for two hydroxy groups, R3 and R4 independently represent a protective group for a hydroxy group, R5 represents a protective group for a hydroxy group, R6 represents a protective group for a hydroxy group, X represents a leaving group, and Y represents a halogen atom.)
摘要翻译：本发明提供以有效和工业上有利的方式制备可用作药物的2'，3'-二脱氢-3'-脱氧-4'-乙炔基胸苷的方法，更具体地说，提供了一种制备 2'，3'-二脱氢-3'-脱氧-4'-乙炔基胸苷如下所示。（其中R1和R2独立地表示羟基的保护基，或R1和R2一起形成两个羟基的保护基，R3和R4独立地表示羟基的保护基，R5表示羟基的保护基基团，R6表示羟基的保护基，X表示离去基，Y表示卤素原子。）

17. 发明授权

US08237493B2 Semiconductor device and power supply device using the same 失效
标题翻译：半导体装置及使用该装置的电源装置
公开(公告)号：US08237493B2
公开(公告)日：2012-08-07
申请号：US13243642
申请日：2011-09-23
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H01L25/00
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.
摘要翻译：提供能够减小电感的半导体器件。在其中将整流MOSFET，换向MOSFET和驱动这些MOSFET的驱动IC安装在一个封装上的半导体器件中，整流MOSFET，金属板和换向MOSFET被层压。主电路的电流从封装的后表面流向其前表面。金属板通过封装中的布线连接到输出端子。引线键合用于连接驱动IC，整流MOSFET和换向MOSFET，所有端子都放置在同一平面上。因此，电感变小，电源损耗和尖峰电压也降低。

18. 发明申请

US20090096436A1 DC-DC CONVERTER 有权
标题翻译： DC-DC转换器
公开(公告)号：US20090096436A1
公开(公告)日：2009-04-16
申请号：US12132504
申请日：2008-06-03
申请人： Satoshi SUGAHARA , Kouhei Yamada , Tetsuya Kawashima , Akira Yamazaki
发明人： Satoshi SUGAHARA , Kouhei Yamada , Tetsuya Kawashima , Akira Yamazaki
IPC分类号： G05F1/00
CPC分类号： H02M3/158
摘要： A DC-DC converter includes a series circuit of a main switch and a choke coil and an output capacitor connected to one end of the series circuit and outputs a DC voltage from the one end of the series circuit. A first MOS transistor is connected in parallel to the series circuit and a second MOS transistor is connected in parallel to the output capacitor. A control circuit controls the gate voltages of the first MOS transistor and/or the second MOS transistor so that the first MOS transistor and/or the second MOS transistor outputs a changed target output voltage, whereby the output voltage is made equal to the target voltage at high speed.
摘要翻译： DC-DC转换器包括主开关和扼流线圈的串联电路和连接到串联电路的一端的输出电容器，并从串联电路的一端输出直流电压。第一MOS晶体管并联连接到串联电路，第二MOS晶体管并联连接到输出电容器。控制电路控制第一MOS晶体管和/或第二MOS晶体管的栅极电压，使得第一MOS晶体管和/或第二MOS晶体管输出改变的目标输出电压，由此使输出电压等于目标电压高速

19. 发明申请

US20120273893A1 SEMICONDUCTOR DEVICE AND POWER SUPPLY DEVICE USING THE SAME 有权
公开(公告)号：US20120273893A1
公开(公告)日：2012-11-01
申请号：US13548265
申请日：2012-07-13
申请人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
发明人： Takayuki Hashimoto , Nobuyoshi Matsuura , Masaki Shiraishi , Yukihiro Satou , Tetsuya Kawashima
IPC分类号： H01L27/088
CPC分类号： H01L25/16 , H01L25/074 , H01L2224/05554 , H01L2224/0603 , H01L2224/40245 , H01L2224/48091 , H01L2224/48137 , H01L2224/4903 , H01L2224/49175 , H01L2924/00014 , H01L2924/12032 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/3011 , H02M3/1588 , Y02B70/1466 , H01L2924/00 , H01L2924/00012 , H01L2224/37099
摘要： A semiconductor device capable of reducing an inductance is provided. In the semiconductor device in which a rectification MOSFET, a commutation MOSFET, and a driving IC that drives these MOSFETs are mounted on one package, the rectification MOSFET, a metal plate, and the commutation MOSFET are laminated. A current of a main circuit flows from a back surface of the package to a front surface thereof. The metal plate is connected to an output terminal via a wiring in the package. Wire bondings are used for wirings for connecting the driving IC, the rectification MOSFET, and the commutation MOSFET, all terminals being placed on the same plane. For this reason, the inductance becomes small and also a power source loss and a spike voltage are reduced.

20. 再颁专利

USRE43663E1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：USRE43663E1
公开(公告)日：2012-09-18
申请号：US12821999
申请日：2010-06-23
申请人： Tetsuya Kawashima , Akira Mishima
发明人： Tetsuya Kawashima , Akira Mishima
IPC分类号： H01L23/02 , H01L23/12
CPC分类号： H01L24/40 , H01L23/49562 , H01L23/49568 , H01L23/49575 , H01L24/06 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/41 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/0401 , H01L2224/05553 , H01L2224/05599 , H01L2224/0603 , H01L2224/13099 , H01L2224/13144 , H01L2224/16245 , H01L2224/29294 , H01L2224/29339 , H01L2224/32245 , H01L2224/371 , H01L2224/40137 , H01L2224/40245 , H01L2224/40249 , H01L2224/45144 , H01L2224/48137 , H01L2224/48247 , H01L2224/48599 , H01L2224/49111 , H01L2224/73219 , H01L2224/73221 , H01L2224/73253 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/30107 , H01L2924/00 , H01L2924/00012
摘要： In the semiconductor device, a control power MOSFET chip 2 is disposed on the input-side plate-like lead 5, and the drain terminal DT1 is formed on the rear surface of the chip 2, and the source terminal ST1 and gate terminal GT1 are formed on the principal surface of the chip 2, and the source terminal ST1 is connected to the plate-like lead for source 12. Furthermore, a synchronous power MOSFET chip 3 is disposed on the output-side plate-like lead 6, and the drain terminal DT2 is formed on the rear surface of the chip 3 and the output-side plate-like lead 6 is connected to the drain terminal DT2. Furthermore, source terminal ST2 and gate terminal GT2 are formed on the principal surface of the synchronous power MOSFET chip 3, and the source terminal ST2 is connected to the plate-like lead for source 13. The plate-like leads for source 12 and 13 are exposed, and therefore, it is possible to increase the heat dissipation capability of the MCM 1.
摘要翻译：在半导体装置中，控制功率MOSFET芯片2配置在输入侧板状引线5上，漏极端子DT1形成在芯片2的背面，源极端子ST1和栅极端子GT1为形成在芯片2的主表面上，源极端子ST1连接到用于源极12的板状引线。此外，同步功率MOSFET芯片3设置在输出侧板状引线6上，并且漏极端子DT2形成在芯片3的后表面上，并且输出侧板状引线6连接到漏极端子DT2。此外，源极端子ST2和栅极端子GT2形成在同步功率MOSFET芯片3的主表面上，源极端子ST2连接到源极13的板状引线。源极12和13的板状引线被曝光，因此可以提高MCM 1的散热能力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式