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11. 发明授权

US08266554B2 Dynamic provisional decomposition of lithographic patterns having different interaction ranges 有权
标题翻译：具有不同相互作用范围的光刻图案的动态临时分解
公开(公告)号：US08266554B2
公开(公告)日：2012-09-11
申请号：US13204440
申请日：2011-08-05
申请人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
发明人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for obtaining mask and source patterns for printing integrated circuit patterns includes providing initial representations of a plurality of mask and source patterns. The method identifies long-range and short-range factors in the representations of the plurality of mask and source patterns, and provides a plurality of clips including a specified number of mask patterns. Short-range factors having overlapping ranges for each of the clips are specified. The method includes determining an initial processing priority for the plurality of clips, and determining a patterning relationship between integrated circuit patterns and the mask and source patterns. A primary objective is determined which expresses the printability of the integrated circuit patterns in terms of the patterning relationship. The method defines and iteratively solves a master problem employing the primary objective to generate values for the long-range factors, and solves subproblems employing a second objective for generating values for the short-range factors.
摘要翻译：用于获得用于打印集成电路图案的掩模和源图案的方法包括提供多个掩模和源图案的初始表示。该方法识别多个掩模和源图案的表示中的长距离和短距离因子，并且提供包括指定数量的掩模图案的多个剪辑。指定具有每个剪辑的重叠范围的短距离因子。该方法包括确定多个剪辑的初始处理优先级，以及确定集成电路图案与掩模和源图案之间的图案化关系。根据图案化关系确定表示集成电路图案的可印刷性的主要目的。该方法定义并迭代地解决了使用主要目标生成长距离因子值的主问题，并且解决了使用第二个目标生成短距离因子值的子问题。

12. 发明申请

US20120047471A1 DYNAMIC PROVISIONAL DECOMPOSITION OF LITHOGRAPHIC PATTERNS HAVING DIFFERENT INTERACTION RANGES 有权
标题翻译：具有不同相互作用范围的平面图的动态临时分解
公开(公告)号：US20120047471A1
公开(公告)日：2012-02-23
申请号：US13204440
申请日：2011-08-05
申请人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
发明人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for obtaining mask and source patterns for printing integrated circuit patterns includes providing initial representations of a plurality of mask and source patterns. The method identifies long-range and short-range factors in the representations of the plurality of mask and source patterns, and provides a plurality of clips including a specified number of mask patterns. Short-range factors having overlapping ranges for each of the clips are specified. The method includes determining an initial processing priority for the plurality of clips, and determining a patterning relationship between integrated circuit patterns and the mask and source patterns. A primary objective is determined which expresses the printability of the integrated circuit patterns in terms of the patterning relationship. The method defines and iteratively solves a master problem employing the primary objective to generate values for the long-range factors, and solves subproblems employing a second objective for generating values for the short-range factors.
摘要翻译：用于获得用于打印集成电路图案的掩模和源图案的方法包括提供多个掩模和源图案的初始表示。该方法识别多个掩模和源图案的表示中的长距离和短距离因子，并且提供包括指定数量的掩模图案的多个剪辑。指定具有每个剪辑的重叠范围的短距离因子。该方法包括确定多个剪辑的初始处理优先级，以及确定集成电路图案与掩模和源图案之间的图案化关系。根据图案化关系确定表示集成电路图案的可印刷性的主要目的。该方法定义并迭代地解决了使用主要目标生成长距离因子值的主问题，并且解决了使用第二个目标生成短距离因子值的子问题。

13. 发明申请

US20120036487A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS 有权
标题翻译：断裂连续光刻胶片
公开(公告)号：US20120036487A1
公开(公告)日：2012-02-09
申请号：US12849171
申请日：2010-08-03
申请人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于压裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

14. 发明授权

US08880382B2 Analyzing a patterning process using a model of yield 有权
公开(公告)号：US08880382B2
公开(公告)日：2014-11-04
申请号：US13352713
申请日：2012-01-18
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06G7/48
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

15. 发明申请

US20130185046A1 Analyzing A Patterning Process Using A Model Of Yield 失效
标题翻译：使用产量模型分析模式化过程
公开(公告)号：US20130185046A1
公开(公告)日：2013-07-18
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E. Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

16. 发明授权

US08266556B2 Fracturing continuous photolithography masks 有权
标题翻译：压裂连续光刻掩模
公开(公告)号：US08266556B2
公开(公告)日：2012-09-11
申请号：US12849171
申请日：2010-08-03
申请人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
发明人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于断裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

17. 发明授权

US08234603B2 Method for fast estimation of lithographic binding patterns in an integrated circuit layout 有权
标题翻译：用于在集成电路布局中快速估计光刻结合图案的方法
公开(公告)号：US08234603B2
公开(公告)日：2012-07-31
申请号：US12835891
申请日：2010-07-14
申请人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： Saeed Bagheri , David L. DeMaris , Maria Gabrani , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/70 , G06F17/5081
摘要： The present invention provides a lithographic difficulty metric that is a function of an energy ratio factor that includes a ratio of hard-to-print energy to easy-to-print energy of the diffraction orders along an angular coordinate θi of spatial frequency space, an energy entropy factor comprising energy entropy of said diffraction orders along said angular coordinate θi, a phase entropy factor comprising phase entropy of said diffraction orders along said angular coordinate θi, and a total energy entropy factor comprising total energy entropy of said diffraction orders. The hard-to-print energy includes energy of the diffraction orders at values of the normalized radial coordinates r of spatial frequency space in a neighborhood of r=0 and in a neighborhood of r=1, and the easy-to-print energy includes energy of the diffraction orders located at intermediate values of normalized radial coordinates r between the neighborhood of r=0 and the neighborhood of r=1. The value of the lithographic difficulty metric may be used to identify patterns in a design layout that are binding patterns in an optimization computation. The lithographic difficulty metric may be used to design integrated circuits that have good, relatively easy-to-print characteristics.
摘要翻译：本发明提供了一种光刻难度度量，其是能量比因子的函数，能量比因子包括沿着角坐标和空间频率空间的角度i的衍射级的难以打印能量的容易打印能量的比率包括沿着所述角坐标和所述角度坐标的所述衍射级的能量熵的能量熵因子; i，包括所述衍射级沿着所述角坐标系的所述衍射级的相位熵的相位熵因子; i，以及包括总能量熵的总能量熵因子说衍射订单。难以打印的能量包括在r = 0和r = 1附近的空间频率空间的归一化径向坐标r的值的衍射级的能量，并且易于打印的能量包括位于r = 0的邻域和r = 1附近的归一化的径向坐标r的中间值处的衍射级的能量。光刻难度度量的值可用于识别在优化计算中的结合模式的设计布局中的图案。光刻难度度可用于设计具有良好，相对易于打印的特性的集成电路。

18. 发明授权

US08682634B2 Analyzing a patterning process using a model of yield 失效
标题翻译：使用产量模型分析图案化过程
公开(公告)号：US08682634B2
公开(公告)日：2014-03-25
申请号：US13613061
申请日：2012-09-13
申请人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
发明人： Saeed Bagheri , Fook-Luen Heng , Rajiv Vasant Joshi , Kafai Lai , David Osmond Melville , Saibal Mukhopadhyay , Alan E Rosenbluth , Rama N. Singh , Kehan Tian
IPC分类号： G06F17/50 , G06G7/62
CPC分类号： G06F17/5009 , G03F1/36 , G03F1/70 , G06F2217/10
摘要： Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.
摘要翻译：提出了包括访问电路产量正向模拟的结果的技术，结果至少包括电路产量结果，包括模拟设备形状。使用电路产量结果，确定至少模拟装置形状的高级特征。基于确定的高水平特征和使用电路产量结果，构建了一种预测产量的紧凑模型，该紧凑模型包括多个可调参数，并构建了用于预测产量的紧凑模型，包括调整可调参数直到满足至少一个第一预定标准。构建最优化问题，其至少包括用于产量，目标和多个约束的紧凑模型。使用优化问题，根据多个约束修改目标，直到满足至少一个第二预定标准。

19. 发明授权

US08448098B2 Fracturing continuous photolithography masks 有权
标题翻译：压裂连续光刻掩模
公开(公告)号：US08448098B2
公开(公告)日：2013-05-21
申请号：US13453262
申请日：2012-04-23
申请人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
发明人： Ying Liu , David Osmond Melville , Alan E Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.
摘要翻译：在说明性实施例中提供了用于压裂可用于光刻的连续掩模的方法，系统和计算机可用程序产品。从连续掩码边缘上的一组点中选择第一个原点。在边缘上识别第一终点，使得第一原点和第一终点之间的间隔度量至少等于阈值。使用第一原点和第一终点确定用于压裂的几种替代方案。计算与几种替代方案中的每一种相关联的成本，并且选择替代方案之一作为优选的压裂。从该组点形成几对原点和终点。每对都有一对优选的压裂成本。连续掩模使用几对的子集进行断裂。

20. 发明申请

US20120210281A1 FRACTURING CONTINUOUS PHOTOLITHOGRAPHY MASKS 有权
公开(公告)号：US20120210281A1
公开(公告)日：2012-08-16
申请号：US13453262
申请日：2012-04-23
申请人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
发明人： YING LIU , David Osmond Melville , Alan E. Rosenbluth , Kehan Tian
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/36
摘要： A method, system, and computer usable program product for fracturing a continuous mask usable in photolithography are provided in the illustrative embodiments. A first origin point is selected from a set of points on an edge in the continuous mask. A first end point is identified on the edge such that a separation metric between the first origin point and the first end point is at least equal to a threshold value. Several alternatives are determined for fracturing using the first origin point and the first end point. A cost associated with each of the several alternatives is computed and one of the alternatives is selected as a preferred fracturing. Several pairs of origin points and end points are formed from the set of points. Each pair has a cost of a preferred fracturing between the pair. The continuous mask is fractured using a subset of the several pairs.

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